CN103764560A - 用于将材料沉积到承载体上的制备装置 - Google Patents

用于将材料沉积到承载体上的制备装置 Download PDF

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Publication number
CN103764560A
CN103764560A CN201180073221.6A CN201180073221A CN103764560A CN 103764560 A CN103764560 A CN 103764560A CN 201180073221 A CN201180073221 A CN 201180073221A CN 103764560 A CN103764560 A CN 103764560A
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CN
China
Prior art keywords
gasket
segments
housing
reaction chamber
substrate
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Pending
Application number
CN201180073221.6A
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English (en)
Chinese (zh)
Inventor
迈克尔·L·安德森
斯蒂芬·特朗布利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hemlock Semiconductor Operations LLC
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Hemlock Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corp filed Critical Hemlock Semiconductor Corp
Publication of CN103764560A publication Critical patent/CN103764560A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Gasket Seals (AREA)
CN201180073221.6A 2011-07-20 2011-07-20 用于将材料沉积到承载体上的制备装置 Pending CN103764560A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2011/044695 WO2013012422A1 (en) 2011-07-20 2011-07-20 Manufacturing apparatus for depositing a material on a carrier body

Publications (1)

Publication Number Publication Date
CN103764560A true CN103764560A (zh) 2014-04-30

Family

ID=44533109

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180073221.6A Pending CN103764560A (zh) 2011-07-20 2011-07-20 用于将材料沉积到承载体上的制备装置

Country Status (9)

Country Link
US (1) US20140165909A1 (enExample)
EP (1) EP2734471B1 (enExample)
JP (1) JP5834140B2 (enExample)
KR (1) KR101632236B1 (enExample)
CN (1) CN103764560A (enExample)
CA (1) CA2842407A1 (enExample)
MY (1) MY162042A (enExample)
NO (1) NO2734471T3 (enExample)
WO (1) WO2013012422A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105090500A (zh) * 2015-08-20 2015-11-25 无锡中强电碳有限公司 一种小型石墨密封环

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014150242A1 (en) * 2013-03-15 2014-09-25 Hemlock Semiconductor Corporation Deposition apparatus
US20160037586A1 (en) * 2013-03-15 2016-02-04 Hemlock Semiconductor Corporation Induction heating apparatus
WO2014143903A1 (en) * 2013-03-15 2014-09-18 Hemlock Semiconductor Corporation Manufacturing apparatus for depositing a material and a gasket for use therein
KR101895538B1 (ko) * 2015-09-08 2018-09-05 한화케미칼 주식회사 폴리실리콘 제조 장치
EP3610942B1 (fr) * 2018-08-15 2022-10-05 Comelec S.A. Bride anticontamination pour machine a parylene
FI3859260T3 (fi) 2020-01-29 2023-08-25 Alfa Laval Vicarb Sas Levylämmönvaihdin
JP7217720B2 (ja) * 2020-03-10 2023-02-03 信越化学工業株式会社 ベースプレートの汚染防止方法
CN216620803U (zh) * 2021-11-19 2022-05-27 乐金空调(山东)有限公司 法兰连接限位密封结构

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US3286685A (en) * 1961-01-26 1966-11-22 Siemens Ag Process and apparatus for pyrolytic production of pure semiconductor material, preferably silicon
US3918396A (en) * 1973-05-14 1975-11-11 Siemens Ag Container for the production of semiconductor bodies
CN86209556U (zh) * 1986-11-25 1988-03-16 中国科学院山西煤炭化学研究所 高温高压柔性石墨密封环
CN2133719Y (zh) * 1992-11-18 1993-05-19 国营五二六厂 一种高性能密封垫片
CN1118047A (zh) * 1994-08-31 1996-03-06 山东省滨州地区科研中试基地 一种柔性石墨密封垫片的制造方法
WO1999001403A1 (en) * 1997-07-02 1999-01-14 Ucar Carbon Technology Corporation Flexible graphite composite sheet and method
US6399204B1 (en) * 2000-01-26 2002-06-04 Garlock, Inc. Flexible multi-layer gasketing product
CN101189916A (zh) * 2005-04-29 2008-05-28 尤卡碳工业有限公司 用于石墨电极的端面密封
CN101415511A (zh) * 2006-02-10 2009-04-22 洛林碳电路元件公司 适用于高温使用条件的多层柔性石墨/金属的密封垫圈
CN101565184A (zh) * 2009-05-22 2009-10-28 宜昌南玻硅材料有限公司 一种多晶硅生产用氢化炉装置内电极密封的方法及装置
CN201458747U (zh) * 2009-07-28 2010-05-12 王春龙 多晶硅还原炉

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JPS60139776A (ja) * 1983-12-27 1985-07-24 Hitachi Chem Co Ltd ガスケツト材
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JPH06101763A (ja) * 1992-09-17 1994-04-12 Nippon Valqua Ind Ltd 膨張黒鉛製シートガスケット
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US20060240306A1 (en) * 2005-04-22 2006-10-26 Mikhail Youssef M Stable, inexpensive, and freeze capable gasket for PEM fuel cells
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3286685A (en) * 1961-01-26 1966-11-22 Siemens Ag Process and apparatus for pyrolytic production of pure semiconductor material, preferably silicon
US3918396A (en) * 1973-05-14 1975-11-11 Siemens Ag Container for the production of semiconductor bodies
CN86209556U (zh) * 1986-11-25 1988-03-16 中国科学院山西煤炭化学研究所 高温高压柔性石墨密封环
CN2133719Y (zh) * 1992-11-18 1993-05-19 国营五二六厂 一种高性能密封垫片
CN1118047A (zh) * 1994-08-31 1996-03-06 山东省滨州地区科研中试基地 一种柔性石墨密封垫片的制造方法
WO1999001403A1 (en) * 1997-07-02 1999-01-14 Ucar Carbon Technology Corporation Flexible graphite composite sheet and method
US6399204B1 (en) * 2000-01-26 2002-06-04 Garlock, Inc. Flexible multi-layer gasketing product
CN101189916A (zh) * 2005-04-29 2008-05-28 尤卡碳工业有限公司 用于石墨电极的端面密封
CN101415511A (zh) * 2006-02-10 2009-04-22 洛林碳电路元件公司 适用于高温使用条件的多层柔性石墨/金属的密封垫圈
CN101565184A (zh) * 2009-05-22 2009-10-28 宜昌南玻硅材料有限公司 一种多晶硅生产用氢化炉装置内电极密封的方法及装置
CN201458747U (zh) * 2009-07-28 2010-05-12 王春龙 多晶硅还原炉

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105090500A (zh) * 2015-08-20 2015-11-25 无锡中强电碳有限公司 一种小型石墨密封环

Also Published As

Publication number Publication date
JP5834140B2 (ja) 2015-12-16
EP2734471B1 (en) 2017-12-20
JP2014527122A (ja) 2014-10-09
CA2842407A1 (en) 2013-01-24
MY162042A (en) 2017-05-31
EP2734471A1 (en) 2014-05-28
NO2734471T3 (enExample) 2018-05-19
WO2013012422A1 (en) 2013-01-24
KR101632236B1 (ko) 2016-06-21
KR20140048988A (ko) 2014-04-24
US20140165909A1 (en) 2014-06-19

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Address after: michigan

Applicant after: Rock Semiconductor Co., Ltd.

Address before: michigan

Applicant before: Hemlock Semiconductor Corp.

RJ01 Rejection of invention patent application after publication
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Application publication date: 20140430