CN103733328B - 基板支撑单元、基板处理装置、及制造基板支撑单元的方法 - Google Patents
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Abstract
根据本发明一实施例,基板支撑单元包括:衬托器,在其上部放置基板;一个以上的吸热构件,其在放置于所述衬托器的上部并与所述衬托器进行热接触(thermal contact)的安装位置、和从所述衬托器的上部移除的解除位置之间转换,并用于在所述安装位置吸收所述衬托器的热量;以及边缘环,其具有选择性地插入固定所述吸热构件的多个固定插槽。
Description
技术领域
本发明涉及一种基板支撑单元、基板处理装置、及制造基板支撑单元的方法,更具体地,涉及一种能够使衬托器(susceptor)的温度分布均匀的基板支撑单元、基板处理装置、及制造基板支撑单元的方法。
背景技术
半导体制造工艺包括对晶圆(wafer)的沉积工艺或蚀刻工艺,在这样的工艺中,晶圆在其装载于陶瓷制或金属制的衬托器的状态下,通过电阻加热器或灯加热器来加热至500℃-700℃。
这时,需要均匀地调节晶圆上的温度分布以确保工艺均匀度,为此,需要均匀地调节衬托器的温度分布。
发明内容
发明要解决的课题
本发明的目的在于,提供一种能够均匀地调节晶圆上的温度分布的基板支撑单元、基板处理装置、及制造基板支撑单元的方法。
本发明的另一目的在于,提供一种能够均匀地调节衬托器上的温度分布的基板支撑单元、基板处理装置、及制造基板支撑单元的方法。
本发明的又一目的可以通过下述详细说明和附图进一步明确。
解决课题的方法
根据本发明的一实施例,基板支撑单元包括:衬托器,在其上部放置基板;一个以上的吸热构件,其在放置于所述衬托器的上部并与所述衬托器进行热接触(thermalcontact)的安装位置、和从所述衬托器的上部移除的解除位置之间转换,并在所述安装位置吸收所述衬托器的热量;以及边缘环(edge ring),其具有选择性地插入固定所述吸热构件的多个固定插槽。
所述衬托器具有用于放置所述基板的中心区域、和位于所述基板外围的边缘区域,所述吸热构件可以在所述安装位置沿着所述边缘区域放置。
所述边缘环为沿着所述衬托器的边缘区域配置的环形状,所述固定插槽可以沿着所述衬托器的径向贯通而形成。
所述吸热构件分别具有与所述衬托器进行热接触的热接触面,所述热接触面的面积可以互不相同。
所述吸热构件可以是包含氧化铝(Al2O3)及氮化铝(AlN)中的任意一种的材质。
根据本发明的一实施例,基板处理装置包括:腔室,其提供实现对基板的工艺的内部空间;基板支撑单元,其设置于所述腔室内并用于支撑所述基板;以及喷头,其用于向被所述基板支撑单元所支撑的所述基板的上部供应工艺气体(process gas),其中,所述基板支撑单元包括:衬托器,在其上部放置基板;一个以上的吸热构件,其在放置于所述衬托器的上部并与所述衬托器进行热接触(thermal contact)的安装位置、和从所述衬托器的上部移除的解除位置之间转换,并在所述安装位置吸收所述衬托器的热量;以及边缘环,其为沿着所述腔室的侧壁配置的环形状,并具有选择性地插入固定所述吸热构件的多个固定插槽。
根据本发明的一实施例,制造具备用于放置基板的衬托器的基板支撑单元的方法,其包括:测量所述衬托器的温度分布,并判断在所述衬托器中具有比基准温度高的温度的一个以上的高温区域的步骤;在所述衬托器上设置具有多个固定插槽的边缘环的步骤;以及在分别与所述高温区域相对应的所述固定插槽,选择性地插入固定吸热构件,从而调节所述衬托器的温度分布的步骤。
发明的效果
根据本发明,可以均匀地调节晶圆上的温度分布。另外,可以均匀地调节衬托器上的温度分布。
附图说明
图1是示意性地示出本发明一实施例的基板处理装置的图。
图2是示出图1所示的边缘环的图。
图3是示出图1所示的吸热构件的图。
图4是示出在图1所示的边缘环选择性地插入吸热构件的状态的图。
图5及图6是示意性地示出本发明其他实施例的基板处理装置的图。
本发明的最佳实施方式
下面,参照图1至图6对本发明的优选实施例进行更详细的说明。本发明的实施例可以以各种形式变形,本发明的范围不应解释为限定于下面说明的实施例。本实施例是为了对本领域普通技术人员更详细地说明本发明而提供的。因此附图所示的各种要素的形状可以被夸张,以用于强调更加明确的说明。
另一方面,下面将沉积装置作为一例进行说明,但是本发明可以应用于具备基板支撑单元的各种各样的基板处理装置。另外,下面将晶圆W作为一例进行说明,但本发明可以应用于各种各样的被处理体。
图1是示意性地示出本发明一实施例的基板处理装置100的图。基板处理装置100是用于沉积膜的,其具备圆筒形状的腔室11。腔室11的内部配置有以水平方式支撑晶圆W的圆盘形状的衬托器12,衬托器12被支撑构件13所支撑。衬托器12是,例如,氧化铝(Al2O3)、氮化铝(AlN)等的陶瓷制。
在衬托器12的内部实装有加热器15。加热器15包括线圈式加热器或图案加热器(pattern heater),加热器15利用从外部供应的电力而加热衬托器。晶圆W通过加热器15加热至规定温度。衬托器可以包括热电偶(未图示),热电偶能够感应衬托器12的温度使得可以实现对衬托器12的温控。另一方面,在本实施例中说明了一体形成的加热器15,但是加热器15可以分解为多个形态而分别加热衬托器12的区域。
在腔室11内的天花板上设置有喷头60。喷头60将从气体供应线62供应的工艺气体向衬托器12供应,气体供应线62通过阀62a进行开闭。喷头60连接有高频电源,根据需要,从高频电源向喷头60提供规定频率的高频电力。
在腔室11的底面形成有排气孔16,工艺气体和反应副产物通过排气孔16排出到外部。另外,还可以通过排气孔16使腔室11内减压至规定的真空度。在腔室11的侧壁设置有用于使晶圆W进出的通道42和用于开闭通道42的闸阀43。
另一方面,在衬托器12的上部设置有边缘环20。图2是示出图1所示的边缘环的图。如图2所示,边缘环20是环(ring)形状,其沿着衬托器12的边缘区域配置在衬托器12的上部。即,晶圆W放置在衬托器12的中心区域,边缘环20放置在位于晶圆W的外围的边缘区域。边缘环20具有多个固定插槽23,固定插槽23沿着边缘环20的径向贯通而形成。固定插槽23通过多个隔开墙22而划分,固定插槽23的大小(或宽度)可以根据隔开墙22的位置进行调节。
如图1所示,吸热构件30插入设置在边缘环20上。吸热构件30插入固定在边缘环20的固定插槽23,并与衬托器12的上部表面进行热接触(thermal contact)(“安装位置”)。热接触表示,衬托器12的热量可以传到吸热构件30的情况,并且热接触包括吸热构件30直接与衬托器12的上部表面接触的情况、或者吸热构件30通过其他媒介间接与衬托器12的上部表面接触的情况。
吸热构件30设置在衬托器12的特定区域并吸收特定区域的热量。从而,通过加热器15以相同的方式加热衬托器12的情况下,在设置吸热构件30之后测量的特定区域的温度,低于在设置吸热构件30之前测量的特定区域的温度。即,吸热构件30对于衬托器12起到热损失(thermal loss)作用,从而通过如上所述的方式可以均匀地调节衬托器12的温度分布。
图3是示出图1所示的吸热构件的图。如图3所示,吸热构件30具备具有外径R和内径r的彩虹形状的热接触面,热接触面与衬托器12的上部表面进行热接触。吸热构件30的中心角θ可以根据固定插槽23的大小(或宽度)决定。吸热构件30的接触距离d可以通过外径R和内径r的差来求出,并且该接触距离d是决定吸热构件30的面积的因素(factor)。吸热构件30的面积是决定从衬托器12吸收的热量的多少的因素,吸热构件30的面积可以通过外径R、内径r、及中心角θ而求出。
吸热构件30从衬托器12吸收的热量的多少大致与吸热构件30的面积成比例。因此,需要具有多种形状(或面积)的吸热构件30以调节衬托器12的温度分布。这是因为温度分布根据衬托器12的区域表现出各种各样的形式。因此,图4示出的吸热构件30可以以多种形态变形,能够提供多种形状的吸热构件30。
吸热构件30可以以与衬托器12相同的材质形成,其可以包含氧化铝(Al2O3)及氮化铝(AlN)中的任意一种。另一方面,如图1和图3所示,吸热构件30具备支撑导向部32,支撑导向部32用于防止吸热构件30过度地插入到衬托器12的内侧。
图4是示出在图1所示的边缘环选择性地插入吸热构件的状态的图。参照图4对利用吸热构件调节衬托器的温度分布的方法进行说明。
首先,操作人员测量衬托器12上的温度分布,利用测量的温度分布可以确定具有比基准温度高的温度的一个以上的高温区域。这时,基准温度可以设定成测量温度中的最低温度,或设定成测量温度的平均温度。温度分布的测量可以在边缘环20设置在衬托器12上的状态下实现。
之后,如图4所示,操作人员可以在与确定的高温区域相对应的固定插槽23插入吸热构件30。这时,吸热构件30的形状(或面积)可以以与高温区域的温度偏差(与基准温度的差)的比例来决定,吸热构件30的面积可以根据接触距离d1、d2、d3来决定。吸热构件30以从边缘环20的外侧朝向内侧的方向插入到固定插槽23,支撑导向部32用于防止吸热构件30过度地插入至内侧。
在吸热构件30插入到固定插槽23的状态下,吸热构件30与衬托器12的上部表面进行热接触,吸热构件30吸收衬托器12的热量而降低所对应的衬托器12的区域的温度,由此以均匀地调节衬托器12的整体的温度分布。如图4所示,在与不高于基准温度的区域所对应的固定插槽23,没有插入吸热构件30,并且吸热构件30从边缘环20分离(“解除位置”)。
另一方面,在本实施例中说明了边缘环20具有八个固定插槽23的情况,但是为了精确地调节衬托器12的温度分布可以增加固定插槽23的个数。例如,在边缘环20具有十六个固定插槽23的情况下,通过十六个固定插槽23可以更精确地调节衬托器12的温度分布。
如上所述,可以容易地调节衬托器12的温度分布。如上述说明,为了确保工艺均匀度需要均匀地调节衬托器12的温度分布,由于衬托器12上的温度分布可以会受到外部条件(腔室的形状或通道的位置等)的影响,因此在最初制作衬托器12时不可能制作出可以具有均匀温度分布的衬托器12。但是,使用边缘环20和吸热构件30的情况下,在衬托器12上设置边缘环20后,在边缘环20的固定插槽23上插入固定各种大小的吸热构件30,由此可以有效地调节衬托器12的温度分布,并且可以使调节温度分布所需的时间和费用最小化。尤其是,在外部条件发生变化的情况下,也可以通过吸热构件30使温度的不均匀最小化,从而能够有效地应用于各种工艺中。
虽然通过优选的实施例对本发明进行了详细说明,但也可以采用与优选的实施例不同形式的实施例。因此,在下述的权利要求书的技术构思和范围并不限于优选的实施例。
发明的实施方案
图5及图6是示意性地示出本发明其他实施例的基板处理装置的图。图1示出的实施例对边缘环20设置在衬托器12的上部的情况进行了说明,但是,如图5所示,边缘环50可以沿着腔室11的侧壁而设置,并且其可以与衬托器12的上部表面隔开距离设置。吸热构件30可以插入固定在边缘环50上。
如图6所示,为进行工艺可以使衬托器12上升,在衬托器12上升的状态下吸热构件30保持与衬托器12的上部表面进行热接触的状态。因此,吸热构件30可以以与如上说明的实施例相同的方法吸收衬托器12中的对应区域的热量,由此可以调节衬托器12的温度分布。这时,与如上说明同样地,基于从衬托器12所要吸收的热量的大小,吸热构件30的接触距离d1、d2(或面积)可能会不同。
产业上的可利用性
本发明能够应用于各种形式的半导体制造设备及制造方法。
Claims (9)
1.一种基板支撑单元,其特征在于,包括:
衬托器,在其上部放置基板;
一个以上的吸热构件,其在放置于所述衬托器的上部并与所述衬托器进行热接触的安装位置、和从所述衬托器的上部移除的解除位置之间转换,并在所述安装位置吸收所述衬托器的热量;以及
边缘环,其具有选择性地插入并固定所述吸热构件的多个固定插槽;
其中所述多个固定插槽包括所述吸热构件插入在其中的封闭插槽和设置为打开的固定插槽的打开插槽二者;
所述边缘环为沿着所述衬托器的边缘区域配置的环形状,
所述固定插槽沿着所述衬托器的径向贯通形成。
2.根据权利要求1所述的基板支撑单元,其特征在于,
所述衬托器具有用于放置所述基板的中心区域、和位于所述基板外围的边缘区域,
所述吸热构件在所述安装位置沿着所述边缘区域放置。
3.根据权利要求1所述的基板支撑单元,其特征在于,
所述吸热构件分别具有与所述衬托器进行热接触的热接触面,
所述热接触面的面积互不相同。
4.根据权利要求1所述的基板支撑单元,其特征在于,
所述吸热构件是包含氧化铝及氮化铝中的任意一种的材质。
5.一种基板处理装置,其特征在于,所述基板处理装置包括:
腔室,其提供实现对基板的工艺的内部空间;
基板支撑单元,其设置于所述腔室内并用于支撑所述基板;以及
喷头,其用于向被所述基板支撑单元所支撑的所述基板的上部供应工艺气体,其中,
所述基板支撑单元包括:
衬托器,在其上部放置基板;
一个以上的吸热构件,其在放置于所述衬托器的上部并与所述衬托器进行热接触的安装位置、和从所述衬托器的上部移除的解除位置之间转换,并用于在所述安装位置吸收所述衬托器的热量;以及
边缘环,其为沿着所述腔室的侧壁配置的环形状,并具有选择性地插入并固定所述吸热构件的多个固定插槽;
其中所述多个固定插槽包括所述吸热构件插入在其中的封闭插槽和设置为打开的固定插槽的打开插槽二者;
所述边缘环为沿着所述衬托器的边缘区域配置的环形状,
所述固定插槽沿着所述衬托器的径向贯通形成。
6.根据权利要求5所述的基板处理装置,其特征在于,
所述衬托器具有用于放置所述基板的中心区域、和位于所述基板外围的边缘区域,
所述吸热构件在所述安装位置沿着所述边缘区域放置。
7.根据权利要求5所述的基板处理装置,其特征在于,
所述吸热构件分别具有与所述衬托器进行热接触的热接触面,
所述热接触面的面积互不相同。
8.一种制造基板支撑单元的方法,所述基板支撑单元具备用于放置基板的衬托器,其特征在于,所述制造基板支撑单元的方法包括:
测量所述衬托器的温度分布,并判断在所述衬托器中具有比基准温度高的温度的一个以上的高温区域的步骤;
在所述衬托器上设置具有多个固定插槽的边缘环的步骤;
在分别与所述高温区域相对应的所述固定插槽,选择性地插入并固定吸热构件,以与所述衬托器进行热接触并保持余下的固定插槽打开,从而调节所述衬托器的温度分布的步骤。
9.根据权利要求8所述的制造基板支撑单元的方法,其特征在于,
所述吸热构件分别具有与所述衬托器进行热接触的热接触面,
所述热接触面的面积互不相同。
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