JP2014527716A - 基板支持ユニット及び基板処理装置,並びに基板支持ユニットの製造方法 - Google Patents
基板支持ユニット及び基板処理装置,並びに基板支持ユニットの製造方法 Download PDFInfo
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- JP2014527716A JP2014527716A JP2014523878A JP2014523878A JP2014527716A JP 2014527716 A JP2014527716 A JP 2014527716A JP 2014523878 A JP2014523878 A JP 2014523878A JP 2014523878 A JP2014523878 A JP 2014523878A JP 2014527716 A JP2014527716 A JP 2014527716A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49764—Method of mechanical manufacture with testing or indicating
Abstract
Description
上部に基板が載置されるサセプタと,
前記サセプタの上に設置されて前記サセプタと熱接触(thermal contact)する装着位置と前記サセプタ上から除去される解除位置間で変位され,前記装着位置で前記サセプタの熱を吸収する一つ以上の熱吸収部材と,
前記熱吸収部材が選択的に挿入固定される複数の固定スロットを有するエッジリングと,を含む。
基板支持装置は,
基板に対する処理が行われる内部空間を提供するチャンバーと,
前記チャンバー内に提供されて前記基板を支持する基板支持ユニットと,
前記基板支持ユニットによって支持された前記基板上にプロセスガスを供給するシャワーヘッドと,を含み,
前記基板支持ユニットは,
上部に基板が載置されるサセプタと,
前記サセプタ上に設置されて前記サセプタと熱接触する装着位置と前記サセプタ上から除去される解除位置間で変位され,前記装着位置で前記サセプタの熱を吸収する一つ以上の熱吸収部材と,
前記チャンバーの側壁に沿って配置されるリング状であって,前記熱吸収部材が選択的に挿入固定される複数の固定スロットを有するエッジリングと,を含む。
Claims (10)
- 上部に基板が載置されるサセプタと,
前記サセプタ上に設置されて前記サセプタと熱接触(thermal contact)する装着位置と前記サセプタ上から除去される解除位置間で変位され,前記装着位置で前記サセプタの熱を吸収する一つ以上の熱吸収部材と,
前記熱吸収部材が選択的に挿入固定される複数の固定スロットを有するエッジリングと,を含むことを特徴とする基板支持ユニット。 - 前記サセプタは前記基板が載置されるセンター領域と,前記基板の周りに位置するエッジ領域を有し,
前記熱吸収部材は,前記装着位置で前記エッジ領域に沿って設置されることを特徴とする請求項1記載の基板支持ユニット。 - 前記エッジリングは前記サセプタのエッジ領域に沿って配置されるリング状であり,前記固定スロットは前記サセプタの半径方向に沿って貫通形成されることを特徴とする請求項1記載の基板支持ユニット。
- 前記熱吸収部材は前記サセプタと熱接触する熱接触面をそれぞれ有し,前記熱接触面の面積は互いに異なることを特徴とする請求項1記載の基板支持ユニット。
- 前記熱吸収部材は,酸化アルミニウム(Al2O3)又は窒化アルミニウム(AIN)のうちいずれか一つを含む材質であることを特徴とする請求項1記載の基板支持ユニット。
- 基板に対する処理が行われる内部空間を提供するチャンバーと,
前記チャンバー内に提供されて前記基板を支持する基板支持ユニットと,
前記基板支持ユニットによって支持された前記基板上にプロセスガスを供給するシャワーヘッドと,を含み,
前記基板支持ユニットは,
上部に基板が載置されるサセプタと,
前記サセプタ上に設置されて前記サセプタと熱接触(thermal contact)する装着位置と前記サセプタ上から除去される解除位置間で変位され,前記装着位置で前記サセプタの熱を吸収する一つ以上の熱吸収部材と,
前記チャンバーの側壁に沿って配置されるリング状であって,前記熱吸収部材が選択的に挿入固定される複数の固定スロットを有するエッジリングと,を含むことを特徴とする基板処理装置。 - 前記サセプタは,前記基板が載置されるセンター領域と,前記基板の周りに位置するエッジ領域を有し,
前記熱吸収部材は,前記装着位置で前記エッジ領域に沿って設置されることを特徴とする請求項6記載の基板処理装置。 - 前記熱吸収部材は前記サセプタと熱接触する熱接触面をそれぞれ有し,
前記熱接触面の面積は互いに異なることを特徴とする請求項6記載の基板処理装置。 - 基板が載置されるサセプタを具備する基板支持ユニットの製造方法において,
前記サセプタの温度分布を測定し,前記サセプタのうち基準温度より高い温度を有する一つ以上の高温領域を判断するステップと,
前記サセプタ上に,複数の固定スロットを有するエッジリングを設置するステップと,
前記高温領域にそれぞれ対応する前記固定スロットに,熱吸収部材を選択的に挿入固定して前記サセプタの温度分布を調節するステップと,を含むことを特徴とする基板支持ユニットの製造方法。 - 前記熱吸収部材は前記サセプタと熱接触する熱接触面をそれぞれ有し,
前記熱接触面の面積は互いに異なることを特徴とする請求項9記載の基板支持ユニットの製造方法。
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KR1020110096730A KR101248881B1 (ko) | 2011-09-26 | 2011-09-26 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법 |
KR10-2011-0096730 | 2011-09-26 | ||
PCT/KR2012/006777 WO2013048016A2 (ko) | 2011-09-26 | 2012-08-24 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을 제조하는 방법 |
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US (1) | US9761473B2 (ja) |
JP (1) | JP5824582B2 (ja) |
KR (1) | KR101248881B1 (ja) |
CN (1) | CN103733328B (ja) |
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CN106337204B (zh) * | 2015-07-17 | 2018-11-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | 石墨托以及装有石墨托的晶体生长炉 |
KR101679237B1 (ko) * | 2015-12-14 | 2016-12-06 | 이승영 | 심폐소생술 연습 기기 |
US20170207102A1 (en) * | 2016-01-15 | 2017-07-20 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
DE102019126769A1 (de) * | 2019-10-04 | 2021-04-08 | Aixtron Se | Prozesskammer mit selbstverschließendem Gasauslass |
DE102020110570A1 (de) * | 2020-04-17 | 2021-10-21 | Aixtron Se | CVD-Verfahren und CVD-Reaktor mit austauschbaren mit dem Substrat Wärme austauschenden Körpern |
US11581213B2 (en) | 2020-09-23 | 2023-02-14 | Applied Materials, Inc. | Susceptor wafer chucks for bowed wafers |
US20220293453A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
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US5868847A (en) * | 1994-12-16 | 1999-02-09 | Applied Materials, Inc. | Clamp ring for shielding a substrate during film layer deposition |
US5632873A (en) * | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
JP3477953B2 (ja) * | 1995-10-18 | 2003-12-10 | 東京エレクトロン株式会社 | 熱処理装置 |
TW418461B (en) * | 1997-03-07 | 2001-01-11 | Tokyo Electron Ltd | Plasma etching device |
US6168668B1 (en) * | 1998-11-25 | 2001-01-02 | Applied Materials, Inc. | Shadow ring and guide for supporting the shadow ring in a chamber |
US6364954B2 (en) * | 1998-12-14 | 2002-04-02 | Applied Materials, Inc. | High temperature chemical vapor deposition chamber |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
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US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
JP4720029B2 (ja) | 2001-06-19 | 2011-07-13 | 東京エレクトロン株式会社 | 枚葉式の熱処理装置 |
JP2003100713A (ja) * | 2001-09-26 | 2003-04-04 | Kawasaki Microelectronics Kk | プラズマ電極用カバー |
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WO2008117781A1 (ja) | 2007-03-28 | 2008-10-02 | Tokyo Electron Limited | Cvd成膜装置 |
KR100943427B1 (ko) | 2008-02-04 | 2010-02-19 | 주식회사 유진테크 | 기판지지유닛 및 기판처리장치, 그리고 기판지지유닛을제조하는 방법 |
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JP5824582B2 (ja) | 2015-11-25 |
TWI474435B (zh) | 2015-02-21 |
WO2013048016A2 (ko) | 2013-04-04 |
CN103733328B (zh) | 2016-12-21 |
KR101248881B1 (ko) | 2013-04-01 |
TW201322364A (zh) | 2013-06-01 |
US9761473B2 (en) | 2017-09-12 |
US20140174356A1 (en) | 2014-06-26 |
CN103733328A (zh) | 2014-04-16 |
WO2013048016A3 (ko) | 2013-05-23 |
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