CN103682978A - 光调制器的制造方法以及光调制器 - Google Patents

光调制器的制造方法以及光调制器 Download PDF

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Publication number
CN103682978A
CN103682978A CN201310427136.6A CN201310427136A CN103682978A CN 103682978 A CN103682978 A CN 103682978A CN 201310427136 A CN201310427136 A CN 201310427136A CN 103682978 A CN103682978 A CN 103682978A
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CN
China
Prior art keywords
wavelength
optical modulator
width
laser diode
manufacturing
Prior art date
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Pending
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CN201310427136.6A
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English (en)
Chinese (zh)
Inventor
柴田公隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN103682978A publication Critical patent/CN103682978A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
CN201310427136.6A 2012-09-21 2013-09-18 光调制器的制造方法以及光调制器 Pending CN103682978A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012208417A JP2014063052A (ja) 2012-09-21 2012-09-21 光変調器の製造方法および光変調器
JP2012-208417 2012-09-21

Publications (1)

Publication Number Publication Date
CN103682978A true CN103682978A (zh) 2014-03-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310427136.6A Pending CN103682978A (zh) 2012-09-21 2013-09-18 光调制器的制造方法以及光调制器

Country Status (3)

Country Link
US (1) US8841143B2 (enExample)
JP (1) JP2014063052A (enExample)
CN (1) CN103682978A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706739A (zh) * 2016-08-08 2018-02-16 三菱电机株式会社 光设备的制造方法
CN109844621A (zh) * 2016-08-12 2019-06-04 哈佛学院院长等 微机械薄膜锂铌酸锂电光装置
CN111164475A (zh) * 2017-10-03 2020-05-15 三菱电机株式会社 半导体光集成元件

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5957855B2 (ja) * 2011-11-21 2016-07-27 住友電気工業株式会社 半導体集積素子
JP6291849B2 (ja) * 2014-01-10 2018-03-14 三菱電機株式会社 半導体装置の製造方法、半導体装置
CN110544873B (zh) * 2019-08-29 2020-11-24 厦门市三安集成电路有限公司 分段式调制结构、激光器及其制作方法

Citations (4)

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CN1330805A (zh) * 1998-12-18 2002-01-09 艾利森电话股份有限公司 半导体制造中的波长补偿方法
JP2003060285A (ja) * 2001-08-10 2003-02-28 Furukawa Electric Co Ltd:The 光集積デバイス
CN101123342A (zh) * 2006-08-10 2008-02-13 三菱电机株式会社 光波导、半导体光学集成元件及其制造方法
US20100247033A1 (en) * 2009-03-31 2010-09-30 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device

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JP3386261B2 (ja) 1994-12-05 2003-03-17 三菱電機株式会社 光半導体装置、及びその製造方法
JP3141854B2 (ja) * 1998-09-28 2001-03-07 日本電気株式会社 光半導体装置の製造方法
JP4690515B2 (ja) * 2000-02-22 2011-06-01 古河電気工業株式会社 光変調器、半導体光素子、及びそれらの作製方法
JP2002033547A (ja) 2000-07-13 2002-01-31 Hitachi Ltd 半導体集積化光素子
JP2004513385A (ja) * 2000-10-30 2004-04-30 サンター　コーポレイション レーザ／ファイバ結合の制御
US6803604B2 (en) * 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
JP4161672B2 (ja) * 2002-10-15 2008-10-08 住友電気工業株式会社 光集積素子の製造方法
JP4550371B2 (ja) * 2003-05-14 2010-09-22 古河電気工業株式会社 電界吸収型光変調器、電界吸収型光変調器付き半導体集積素子、それらを用いたモジュール及び電界吸収型光変調器付き半導体集積素子の製造方法
KR100532260B1 (ko) * 2003-07-08 2005-11-29 삼성전자주식회사 반도체 단일 집적 광송신기
JP2009194023A (ja) * 2008-02-12 2009-08-27 Sumitomo Electric Ind Ltd 半導体光素子を作製する方法
JP2011091164A (ja) * 2009-10-21 2011-05-06 Sumitomo Electric Ind Ltd 半導体集積素子
JP2011258713A (ja) * 2010-06-08 2011-12-22 Sumitomo Electric Device Innovations Inc 分布帰還型半導体レーザ素子の作製方法
JP2013016648A (ja) * 2011-07-04 2013-01-24 Sumitomo Electric Ind Ltd 半導体光集積素子の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1330805A (zh) * 1998-12-18 2002-01-09 艾利森电话股份有限公司 半导体制造中的波长补偿方法
JP2003060285A (ja) * 2001-08-10 2003-02-28 Furukawa Electric Co Ltd:The 光集積デバイス
CN101123342A (zh) * 2006-08-10 2008-02-13 三菱电机株式会社 光波导、半导体光学集成元件及其制造方法
US20100247033A1 (en) * 2009-03-31 2010-09-30 Sumitomo Electric Device Innovations, Inc. Optical semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107706739A (zh) * 2016-08-08 2018-02-16 三菱电机株式会社 光设备的制造方法
CN109844621A (zh) * 2016-08-12 2019-06-04 哈佛学院院长等 微机械薄膜锂铌酸锂电光装置
US11598980B2 (en) 2016-08-12 2023-03-07 President And Fellows Of Harvard College Micro-machined thin film lithium niobate electro-optic devices
US12379618B2 (en) 2016-08-12 2025-08-05 President And Fellows Of Harvard College Micro-machined thin film lithium niobate electro-optic devices
CN111164475A (zh) * 2017-10-03 2020-05-15 三菱电机株式会社 半导体光集成元件

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US8841143B2 (en) 2014-09-23
JP2014063052A (ja) 2014-04-10
US20140087493A1 (en) 2014-03-27

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