CN103676376B - 阵列基板及其制作方法及应用该阵列基板的液晶显示面板 - Google Patents

阵列基板及其制作方法及应用该阵列基板的液晶显示面板 Download PDF

Info

Publication number
CN103676376B
CN103676376B CN201310670010.1A CN201310670010A CN103676376B CN 103676376 B CN103676376 B CN 103676376B CN 201310670010 A CN201310670010 A CN 201310670010A CN 103676376 B CN103676376 B CN 103676376B
Authority
CN
China
Prior art keywords
substrate
thickness
array
tft
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201310670010.1A
Other languages
English (en)
Other versions
CN103676376A (zh
Inventor
徐向阳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL Huaxing Photoelectric Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201310670010.1A priority Critical patent/CN103676376B/zh
Priority to PCT/CN2013/091251 priority patent/WO2015085641A1/zh
Priority to US14/236,867 priority patent/US9612497B2/en
Publication of CN103676376A publication Critical patent/CN103676376A/zh
Application granted granted Critical
Publication of CN103676376B publication Critical patent/CN103676376B/zh
Priority to US15/429,454 priority patent/US9897880B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Abstract

本发明提供一种阵列基板及其制作方法及应用该阵列基板的液晶显示面板，该阵列基板包括：一第一基板（32）、形成于所述第一基板（32）上的栅极线、形成于所述第一基板（32）上的数据线（34）、形成于所述第一基板（32）上的薄膜晶体管阵列、形成于所述薄膜晶体管阵列上的像素电极（36）、形成于所述像素电极（36）、数据线（34）与薄膜晶体管阵列上的第一钝化层（38）、形成于所述第一钝化层（38）上的黑色矩阵（42）、以及形成于所述黑色矩阵（42）与第一钝化层（38）上的公共电极（44）。本发明将黑色矩阵形成于阵列基板上，减小了公共电极与栅极线、数据线之间的寄生电容，有利于提高公共电极上电压的均匀性。

Description

阵列基板及其制作方法及应用该阵列基板的液晶显示面板
技术领域
本发明涉及液晶显示技术领域，尤其涉及一种阵列基板及其制作方法及应用该阵列基板的显示面板。
背景技术
液晶显示装置（LiquidCrystalDisplay，LCD）具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，并随着液晶显示装置产业的发展，其要求性能也越来越高，如高分辨率、高亮度、广视角、低功耗等性能，且其相应的技术也持续被开发出来。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括液晶显示面板及背光模组（backlightmodule）。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，通过在两片玻璃基板上施加驱动电压来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩色滤光膜（ColorFilter，CF）基板、薄膜晶体管（ThinFilmTransistor，TFT)基板、夹于彩色滤光膜基板与薄膜晶体管基板之间的液晶（LiquidCrystal，LC）材料及密封胶框（Sealant）组成，其成型工艺一般包括：前段阵列（Array）制程（薄膜、黄光、蚀刻及剥膜）、中段成盒（Cell）制程（薄膜晶体管基板与彩色滤光膜基板贴合）及后段模组组装制程（驱动电路（IC）与印刷电路板压合）。
就目前主流市场上的液晶显示面板而言，可分为三大类，分别是TN（扭曲向列）/STN（超级扭曲向列），IPS（板内切换）/FFS（边缘切换）及VA（垂直配向）型。边缘切换显示面板在视角方面比扭曲向列显示面板优秀，以及在液晶透过效率方面比板内切换显示面板优秀，因此不仅在小型设备上的应用（application），在中、大型的监视器、电视机上的适用范围也越来越广。
边缘切换型显示面板是利用公共电极（COMITO）和像素电极（PixelITO）间的边缘电场（fringeelectricfield）现象驱动液晶。为了消除直流残留带来的残影，一般采用交流模式进行驱动。这种交流变化主要是通过公共电极上的电压来实现的，因此公共电极上电压的均匀性直接影响到画面的显示质量。如果公共电极上的电压不均匀，屏幕画面就会出现绿斑（Greenish）及闪烁（Flicker）等现象。
发明内容
本发明的目的在于提供一种阵列基板，利用形成其上的黑色矩阵来减小公共电极与栅极线、数据线之间的寄生电容，有利于提高公共电极上电压的均匀性，及改善了屏幕画面的绿斑及闪烁现象。
本发明的另一目的在于提供一种阵列基板的制作方法，制作简单快捷，利用该方法制作的阵列基板有利于改善液晶显示面板的显示质量。
本发明的又一目的在于提供一种液晶显示面板，将黑色矩阵形成于阵列基板上，减小了公共电极与栅极线、数据线之间的寄生电容，有利于提高公共电极上电压的均匀性，及改善了屏幕画面的绿斑及闪烁现象，改善了屏幕画面的绿斑及闪烁现象。
为实现上述目的，本发明提供一种阵列基板，包括：一第一基板、形成于所述第一基板上的栅极线、形成于所述第一基板上的数据线、形成于所述第一基板上的薄膜晶体管阵列、形成于所述薄膜晶体管阵列上的像素电极、形成于所述像素电极与薄膜晶体管阵列上的第一钝化层、形成于所述第一钝化层上的黑色矩阵、以及形成于所述黑色矩阵与第一钝化层上的公共电极。
所述薄膜晶体管阵列包括：形成于所述第一基板上的栅极、形成于所述第一基板与栅极上的栅极绝缘层、形成于所述栅极绝缘层上的半导体层、形成于所述半导体层上的源/漏极，所述栅极由铬、钼、铝及铜形成，所述栅极绝缘层通过等离子体增强化学气相沉积法由硅沉积而成，所述半导体层由氢化非晶硅沉积而形成。
所述像素电极与公共电极分别为一透明导电层，所述像素电极与公共电极均由氧化铟锡或氧化铟锌制成，所述第一基板为玻璃基板或塑料基板。
所述栅极绝缘层的厚度为所述栅极的厚度为所述半导体层的厚度为所述第一钝化层的厚度为所述源/漏极的厚度为所述像素电极的厚度为所述公共电极的厚度为所述黑色矩阵的厚度为0.2～1.0um。
本发明还提供一种阵列基板的制作方法，包括以下步骤：
步骤1、提供一第一基板；
步骤2、在所述第一基板上形成栅极线、数据线及薄膜晶体管阵列；
步骤3、在所述薄膜晶体管阵列上形成像素电极；
步骤4、在所述像素电极、数据线与薄膜晶体管阵列上沉积形成第一钝化层；
步骤5、在所述第一钝化层上形成黑色矩阵；
步骤6、在所述黑色矩阵与第一钝化层上形成公共电极。
所述步骤2包括以下步骤：
步骤21、在所述第一基板上形成第一金属层，并对该第一金属层按预定图案进行第一光刻制程，以形成栅极与栅极线；
步骤22、通过等离子增强化学气相沉积法在所述第一基板及栅极与栅极线上沉积硅以形成栅极绝缘层；
步骤23、通过等离子增强化学气相沉积法在所述栅极绝缘层上沉积氢化非晶硅以形成半导体层，并按预定图案对该半导体层进行第二光刻制程；
步骤24、在所述半导体层与栅极绝缘层上形成第二金属层，并按预定图案对该第二金属层进行第三光刻制程，以形成源/漏极与数据线，进而形成薄膜晶体管阵列。
所述步骤3中在所述薄膜晶体管阵列上形成一透明导电层，并按预定图案对该透明导电层进行第四光刻制程，以形成像素电极；
所述步骤4中通过等离子增强化学气相沉积法在所述像素电极、数据线与薄膜晶体管阵列上沉积形成一保护膜，并按预定图案对该保护膜进行第五光刻制程，以形成第一钝化层；
所述步骤5中通过涂覆制程在所述第一钝化层上形成一定厚度的黑色矩阵，并对该黑色矩阵进行第六光刻制程；
所述步骤6中在所述黑色矩阵与第一钝化层上形成一透明导电层，并按预定图案对该透明导电层进行第七光刻制程，以形成公共电极。
所述第一基板为玻璃基板或塑料基板，所述栅极绝缘层的厚度为 所述栅极的厚度为所述第一钝化层的厚度为 所述半导体层的厚度为所述源/漏极的厚度为所述像素电极的厚度为所述公共电极的厚度为所述黑色矩阵的厚度为0.2～1.0um。
本发明还提供一种液晶显示面板，包括：一阵列基板、一彩色滤光片基板、以及密封于阵列基板与彩色滤光片基板之间的液晶材料；所述阵列基板包括：一第一基板、形成于所述第一基板上的栅极线、形成于所述第一基板上的数据线、形成于所述第一基板上的薄膜晶体管阵列、形成于所述薄膜晶体管阵列上的像素电极、形成于所述像素电极、数据线与薄膜晶体管阵列上的第一钝化层、形成于所述第一钝化层上的黑色矩阵、以及形成于所述黑色矩阵与第一钝化层上的公共电极；所述彩色滤光片基板包括：第二基板、形成于所述第二基板上的彩色滤光片、形成于所述彩色滤光片与第二基板上的第二钝化层、以及形成于第二钝化层上的间隔层。
所述薄膜晶体管阵列包括：形成于所述第一基板上的栅极、形成于所述第一基板与栅极上的栅极绝缘层、形成于所述栅极绝缘层上的半导体层、形成于所述半导体层上的源/漏极，所述栅极由铬、钼、铝及铜形成，所述栅极绝缘层通过等离子体增强化学气相沉积法由硅沉积而成，所述半导体层由氢化非晶硅沉积而形成；
所述像素电极与公共电极分别为一透明导电层，所述像素电极与公共电极均由氧化铟锡或氧化铟锌制成，所述第一基板为玻璃基板或塑料基板；
所述栅极绝缘层的厚度为所述栅极的厚度为所述半导体层的厚度为所述第一钝化层的厚度为所述源/漏极的厚度为所述像素电极的厚度为所述公共电极的厚度为所述黑色矩阵的厚度为0.2～1.0um；
所述第二基板为玻璃基板或塑料基板，所述彩色滤光片包括：红色滤光片、蓝色滤光片及绿色滤光片。
本发明的有益效果：本发明的阵列基板及其制作方法及应用该阵列基板的液晶显示面板，将黑色矩阵形成于阵列基板上，增大了公共电极与数据线及栅极线之间的距离，进而减小了公共电极与栅极线、数据线之间的寄生电容，有利于提高公共电极上电压的均匀性，及改善了屏幕画面的绿斑及闪烁现象，且该阵列基板制作方法较为简单。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明阵列基板的俯视图；
图2为图1中A-A的剖面图；
图3为图1中B-B的剖面图；
图4为本发明阵列基板的制作方法的步骤流程图；
图5至图11为本发明阵列基板的制作方法的工艺流程图；
图12为本发明液晶显示面板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图3，本发明提供一种阵列基板，该阵列基板应用于边缘切换型显示面板中，其具体包括：一第一基板32、形成于所述第一基板32上的栅极线（未图示）、形成于所述第一基板32上的数据线34、形成于所述第一基板32上的薄膜晶体管阵列（未标示）、形成于所述薄膜晶体管阵列上的像素电极36、形成于所述像素电极36、数据线34与薄膜晶体管阵列上的第一钝化层38、形成于所述第一钝化层38上的黑色矩阵42、以及形成于所述黑色矩阵42与第一钝化层38上的公共电极44。所述公共电极44位于所述数据线34、栅极线的上面，且在公共电极44与数据线34、栅极线之间加入了黑色矩阵42，有利于增大它们之间的距离，进而减小了公共电极44与栅极线、数据线34之间的寄生电容，有利于提高公共电极44上电压的均匀性。
具体的，所述薄膜晶体管阵列包括：形成于所述第一基板32上的栅极52、形成于所述第一基板32与栅极52上的栅极绝缘层54、形成于所述栅极绝缘层54上的半导体层56、形成于所述半导体层56上的源/漏极58。所述栅极52的厚度为所述栅极绝缘层54的厚度为所述栅极52由铬（Cr）、钼（Mo）、铝（Al）及铜（Cu）金属形成，所述栅极绝缘层54通过等离子体增强化学气相沉积法由硅（Si）沉积而成，所述半导体层56由氢化非晶硅（a-Si:H）沉积而形成。
所述栅极线由第一金属层的其它非薄膜晶体管阵列部分形成，所述数据线34由第二金属层的其它非薄膜晶体管阵列部分形成。
所述像素电极36与公共电极44分别为一透明导电层，在本实施例中，所述像素电极36与公共电极44均由氧化铟锡或氧化铟锌制成。所述第一基板32为玻璃基板或塑料基板，本实施例中，优选为玻璃基板。
在本实施例中，其它各膜层的厚度具体如下：所述第一钝化层38的厚度为所述半导体层56的厚度为所述源/漏极58的厚度为所述像素电极36的厚度为所述公共电极44的厚度为所述黑色矩阵42的厚度为0.2～1.0um。
请参阅图4至图11，本发明还提供一种阵列基板的制作方法，包括以下步骤：
步骤1、提供一第一基板32。
所述第一基板42为玻璃基板或塑料基板，本实施例中，优选为玻璃基板。
步骤2、在所述第一基板42上形成栅极线（未图示）、数据线34及薄膜晶体管阵列（未标示）。
该步骤可以细分为以下步骤：
步骤21、在所述第一基板42上形成第一金属层，并对该第一金属层按预定图案进行第一光刻制程，以形成栅极52与栅极线。
具体的，第一光刻制程包括：涂布、曝光、显影、蚀刻、剥离等制程，其中蚀刻是采用掩膜板的湿法蚀刻。
所述栅极52的厚度为
步骤22、通过等离子增强化学气相沉积法（PECVD）在所述第一基板32及栅极52与栅极线上沉积硅以形成栅极绝缘层54。
所述栅极绝缘层的厚度为
步骤23、通过等离子增强化学气相沉积法在所述栅极绝缘层54上沉积氢化非晶硅以形成半导体层56，并按预定图案对该半导体层56进行第二光刻制程。
第二光刻制程包括：涂布、曝光、显影、蚀刻、剥离等制程，其中蚀刻为干法蚀刻。
所述半导体层56的厚度为
步骤24、在所述半导体层56与栅极绝缘层54上形成第二金属层，并按预定图案对该第二金属层进行第三光刻制程，以形成源/漏极58与数据线34，进而形成薄膜晶体管阵列。
第三光刻制程包括：涂布、曝光、显影、蚀刻、剥离等制程，其中蚀刻为湿法蚀刻。
所述源/漏极58的厚度为
步骤3、在所述薄膜晶体管阵列上形成像素电极36。
在所述薄膜晶体管阵列（源/漏极58与栅极绝缘层54）上形成一透明导电层，并按预定图案对该透明导电层进行第四光刻制程，以形成像素电极36。其中，第四光刻制程包括：涂布、曝光、显影、蚀刻、剥离等制程，其中蚀刻为采用掩膜板的湿法蚀刻。
所述像素电极36的厚度为
步骤4、在所述像素电极36、数据线34与薄膜晶体管阵列上沉积形成第一钝化层38。
通过等离子增强化学气相沉积法在所述像素电极36、数据线34与薄膜晶体管阵列上沉积形成一保护膜，并按预定图案对该保护膜进行第五光刻制程，以形成第一钝化层38。其中，第五光刻制程包括：涂布、曝光、显影、蚀刻、剥离等制程，其中蚀刻为干法蚀刻或湿法蚀刻。
所述第一钝化层38的厚度为
步骤5、在所述第一钝化层38形成黑色矩阵42。
通过涂覆制程在所述第一钝化层38形成一定厚度的黑色矩阵42，并对该黑色矩阵42进行第六光刻制程。其中，所述黑色矩阵42的厚度为0.2～1.0um。
步骤6、在所述黑色矩阵42与第一钝化层38上形成公共电极44。
在所述黑色矩阵42与第一钝化层38上形成一透明导电层，并按预定图案对该透明导电层进行第七光刻制程，以形成公共电极44。其中，所述公共电极44的厚度为
请参阅图12，本发明还提供一种液晶显示面板，该液晶显示面板为边缘切换型显示面板，具体包括：一阵列基板30、一彩色滤光片基板50、以及密封于阵列基板30与彩色滤光片基板50之间的液晶材料60；所述阵列基板30包括：一第一基板32、形成于所述第一基板32上的栅极线（未图示）、形成于所述第一基板32上的数据线34、形成于所述第一基板32上的薄膜晶体管阵列（未标示）、形成于所述薄膜晶体管阵列上的像素电极36、形成于所述像素电极36、数据线34与薄膜晶体管阵列上的第一钝化层38、形成于所述第一钝化层38上的黑色矩阵42、以及形成于所述黑色矩阵42与第一钝化层38上的公共电极44。所述彩色滤光片基板50包括：第二基板61、形成于所述第二基板61上的彩色滤光片62、形成于所述彩色滤光片62与第二基板61上的第二钝化层67、以及形成于第二钝化层67上的间隔层68。所述公共电极44位于所述数据线34、栅极线的上面，且在公共电极44与数据线34、栅极线之间加入了黑色矩阵42，有利于增大它们之间的距离，进而减小了公共电极44与栅极线、数据线34之间的寄生电容，有利于提高公共电极44上电压的均匀性。
具体的，所述薄膜晶体管阵列包括：形成于所述第一基板32上的栅极52、形成于所述第一基板32与栅极52上的栅极绝缘层54、形成于所述栅极绝缘层54上的半导体层56、形成于所述半导体层56上的源/漏极58。所述栅极52的厚度为所述栅极绝缘层54的厚度为所述栅极52由铬、钼、铝及铜形成，所述栅极绝缘层54通过等离子体增强化学气相沉积法由硅沉积而成，所述半导体层56由氢化非晶硅沉积而形成。
所述栅极线由第一金属层的其它非薄膜晶体管阵列部分形成，所述数据线34由第二金属层的其它非薄膜晶体管阵列部分形成。
所述像素电极36与公共电极44分别为一透明导电层，在本实施例中，所述像素电极36与公共电极44均由氧化铟锡或氧化铟锌制成。所述第一基板32为玻璃基板或塑料基板，本实施例中，优选为玻璃基板。
在本实施例中，其它各膜层的厚度具体如下：所述第一钝化层38的厚度为所述半导体层56的厚度为所述源/漏极58的厚度为所述像素电极36的厚度为所述公共电极44的厚度为所述黑色矩阵42的厚度为0.2～1.0um。
所述第二基板61为玻璃基板或塑料基板，所述彩色滤光片62包括：红色滤光片63、蓝色滤光片64及绿色滤光片66。
综上所述，本发明的阵列基板及其制作方法及应用该阵列基板的液晶显示面板，将黑色矩阵形成于阵列基板上，增大了公共电极与数据线及栅极线之间的距离，进而减小了公共电极与栅极线、数据线之间的寄生电容，有利于提高公共电极上电压的均匀性，及改善了屏幕画面的绿斑及闪烁现象，且该阵列基板制作方法较为简单。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种阵列基板，其特征在于，包括：一第一基板（32）、形成于所述第一基板（32）上的栅极线、形成于所述第一基板（32）上的数据线（34）、形成于所述第一基板（32）上的薄膜晶体管阵列、形成于所述薄膜晶体管阵列上的像素电极（36）、形成于所述像素电极（36）、数据线（34）与薄膜晶体管阵列上的第一钝化层（38）、形成于所述第一钝化层（38）上的黑色矩阵（42）、以及形成于所述黑色矩阵（42）与第一钝化层（38）上的公共电极（44）。
2.如权利要求1所述的阵列基板，其特征在于，所述薄膜晶体管阵列包括：形成于所述第一基板（32）上的栅极（52）、形成于所述第一基板（32）与栅极（52）上的栅极绝缘层（54）、形成于所述栅极绝缘层（54）上的半导体层（56）、形成于所述半导体层（56）上的源/漏极（58），所述栅极（52）由铬、钼、铝及铜形成，所述栅极绝缘层（54）通过等离子体增强化学气相沉积法由硅沉积而成，所述半导体层（56）由氢化非晶硅沉积而形成。
3.如权利要求1所述的阵列基板，其特征在于，所述像素电极（36）与公共电极（44）分别为一透明导电层，所述像素电极（36）与公共电极（44）均由氧化铟锡或氧化铟锌制成，所述第一基板（32）为玻璃基板或塑料基板。
4.如权利要求2所述的阵列基板，其特征在于，所述栅极绝缘层（54）的厚度为所述栅极（52）的厚度为所述半导体层（56）的厚度为所述第一钝化层（38）的厚度为所述源/漏极（58）的厚度为所述像素电极（36）的厚度为所述公共电极（44）的厚度为所述黑色矩阵（42）的厚度为0.2～1.0um。
5.一种阵列基板的制作方法，其特征在于，包括以下步骤：
步骤1、提供一第一基板（32）；
步骤2、在所述第一基板（32）上形成栅极线、数据线（34）及薄膜晶体管阵列；
步骤3、在所述薄膜晶体管阵列上形成像素电极（36）；
步骤4、在所述像素电极（36）、数据线（34）与薄膜晶体管阵列上沉积形成第一钝化层（38）；
步骤5、在所述第一钝化层（38）上形成黑色矩阵（42）；
步骤6、在所述黑色矩阵（42）与第一钝化层（38）上形成公共电极（44）。
6.如权利要求5所述的阵列基板的制作方法，其特征在于，所述步骤2包括以下步骤：
步骤21、在所述第一基板（32）上形成第一金属层，并对该第一金属层按预定图案进行第一光刻制程，以形成栅极（52）与栅极线；
步骤22、通过等离子增强化学气相沉积法在所述第一基板（32）及栅极（52）与栅极线上沉积硅以形成栅极绝缘层（54）；
步骤23、通过等离子增强化学气相沉积法在所述栅极绝缘层（54）上沉积氢化非晶硅以形成半导体层（56），并按预定图案对该半导体层（56）进行第二光刻制程；
步骤24、在所述半导体层（56）与栅极绝缘层（54）上形成第二金属层，并按预定图案对该第二金属层进行第三光刻制程，以形成源/漏极（58）与数据线（34），进而形成薄膜晶体管阵列。
7.如权利要求5所述的阵列基板的制作方法，其特征在于，所述步骤3中在所述薄膜晶体管阵列上形成一透明导电层，并按预定图案对该透明导电层进行第四光刻制程，以形成像素电极（36）；
所述步骤4中通过等离子增强化学气相沉积法在所述像素电极（36）、数据线（34）与薄膜晶体管阵列上沉积形成一保护膜，并按预定图案对该保护膜进行第五光刻制程，以形成第一钝化层（38）；
所述步骤5中通过涂覆制程在所述第一钝化层（38）上形成黑色矩阵（42），并对该黑色矩阵（42）进行第六光刻制程；
所述步骤6中在所述黑色矩阵（42）与第一钝化层（38）上形成一透明导电层，并按预定图案对该透明导电层进行第七光刻制程，以形成公共电极（44）。
8.如权利要求6所述的阵列基板的制作方法，其特征在于，所述第一基板（32）为玻璃基板或塑料基板，所述栅极绝缘层（54）的厚度为所述栅极（52）的厚度为所述半导体层（56）的厚度为 所述第一钝化层（38）的厚度为所述源/漏极（58）的厚度为所述像素电极（36）的厚度为所述公共电极（44）的厚度为所述黑色矩阵（42）的厚度为0.2～1.0um。
9.一种液晶显示面板，其特征在于，包括：一阵列基板（30）、一彩色滤光片基板（50）、以及密封于阵列基板（30）与彩色滤光片基板（50）之间的液晶材料（60）；所述阵列基板（30）包括：一第一基板（32）、形成于所述第一基板（32）上的栅极线、形成于所述第一基板（32）上的数据线（34）、形成于所述第一基板（32）上的薄膜晶体管阵列、形成于所述薄膜晶体管阵列上的像素电极（36）、形成于所述像素电极（36）、数据线（34）与薄膜晶体管阵列上的第一钝化层（38）、形成于所述第一钝化层（38）上的黑色矩阵（42）、以及形成于所述黑色矩阵（42）与第一钝化层（38）上的公共电极（44）；所述彩色滤光片基板（50）包括：第二基板（61）、形成于所述第二基板（61）上的彩色滤光片（62）、形成于所述彩色滤光片（62）与第二基板（61）上的第二钝化层（67）、以及形成于第二钝化层（67）上的间隔层（68）。
10.如权利要求9所述的液晶显示面板，其特征在于，所述薄膜晶体管阵列包括：形成于所述第一基板（32）上的栅极（52）、形成于所述第一基板（32）与栅极（52）上的栅极绝缘层（54）、形成于所述栅极绝缘层（54）上的半导体层（56）、形成于所述半导体层（56）上的源/漏极（58），所述栅极（52）由铬、钼、铝及铜形成，所述栅极绝缘层（54）通过等离子体增强化学气相沉积法由硅沉积而成，所述半导体层（56）由氢化非晶硅沉积而形成；
所述像素电极（36）与公共电极（44）分别为一透明导电层，所述像素电极（36）与公共电极（44）均由氧化铟锡或氧化铟锌制成，所述第一基板（32）为玻璃基板或塑料基板；
所述栅极绝缘层（54）的厚度为所述栅极（52）的厚度为所述半导体层（56）的厚度为所述第一钝化层（38）的厚度为所述源/漏极（58）的厚度为所述像素电极（36）的厚度为所述公共电极（44）的厚度为所述黑色矩阵（42）的厚度为0.2～1.0um；
所述第二基板（61）为玻璃基板或塑料基板，所述彩色滤光片（62）包括：红色滤光片（63）、蓝色滤光片（64）及绿色滤光片（66）。
CN201310670010.1A 2013-12-10 2013-12-10 阵列基板及其制作方法及应用该阵列基板的液晶显示面板 Active CN103676376B (zh)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201310670010.1A CN103676376B (zh) 2013-12-10 2013-12-10 阵列基板及其制作方法及应用该阵列基板的液晶显示面板
PCT/CN2013/091251 WO2015085641A1 (zh) 2013-12-10 2013-12-31 阵列基板及其制作方法及应用该阵列基板的液晶显示面板
US14/236,867 US9612497B2 (en) 2013-12-10 2013-12-31 Array substrate and manufacturing method thereof and liquid crystal display panel using the array substrate
US15/429,454 US9897880B2 (en) 2013-12-10 2017-02-10 Array substrate and manufacturing method thereof and liquid crystal display panel using the array substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310670010.1A CN103676376B (zh) 2013-12-10 2013-12-10 阵列基板及其制作方法及应用该阵列基板的液晶显示面板

Publications (2)

Publication Number Publication Date
CN103676376A CN103676376A (zh) 2014-03-26
CN103676376B true CN103676376B (zh) 2016-01-06

Family

ID=50314404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310670010.1A Active CN103676376B (zh) 2013-12-10 2013-12-10 阵列基板及其制作方法及应用该阵列基板的液晶显示面板

Country Status (3)

Country Link
US (2) US9612497B2 (zh)
CN (1) CN103676376B (zh)
WO (1) WO2015085641A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104867877A (zh) * 2015-04-09 2015-08-26 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示面板和显示装置
CN104916648A (zh) * 2015-06-11 2015-09-16 京东方科技集团股份有限公司 一种阵列基板、制备方法及显示装置
CN105094486B (zh) * 2015-08-03 2018-01-30 深圳市华星光电技术有限公司 内嵌式自电容触控显示面板及其制作方法
CN105204258A (zh) * 2015-11-05 2015-12-30 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN105655292B (zh) * 2016-01-05 2019-03-15 深圳市华星光电技术有限公司 液晶显示面板、阵列基板及其制造方法
CN107195640A (zh) * 2017-06-28 2017-09-22 京东方科技集团股份有限公司 阵列基板及其制备方法和显示装置
KR102426595B1 (ko) * 2017-10-26 2022-07-28 삼성디스플레이 주식회사 액정 표시 장치
US20190155091A1 (en) * 2017-11-22 2019-05-23 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Tft array substrate, manufacturing method and liquid crystal display panel
CN109459882A (zh) * 2018-12-19 2019-03-12 惠科股份有限公司 一种显示面板、显示装置及显示面板制造方法
CN113302485A (zh) * 2019-01-10 2021-08-24 深圳帧观德芯科技有限公司 基于外延层的x射线检测器及其制备方法
CN110346995B (zh) * 2019-07-26 2021-07-27 苏州华星光电技术有限公司 一种阵列基板
CN110764329A (zh) * 2019-10-31 2020-02-07 京东方科技集团股份有限公司 阵列基板及其制备方法、液晶显示面板、显示装置
CN111446261B (zh) * 2020-04-03 2023-11-28 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制备方法、显示装置
CN111665656A (zh) * 2020-06-28 2020-09-15 武汉华星光电技术有限公司 显示装置及其制备方法
CN113934061B (zh) * 2020-06-29 2023-02-07 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN111952331A (zh) * 2020-09-01 2020-11-17 深圳市华星光电半导体显示技术有限公司 微发光二极管显示基板及其制作方法
CN113267924B (zh) * 2021-05-07 2023-01-10 惠州市华星光电技术有限公司 显示面板和显示装置
US20220399376A1 (en) * 2021-06-11 2022-12-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate, method for manufacturing same, and display panel

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1420386A (zh) * 2001-11-15 2003-05-28 日本电气株式会社 平面开关模式有源矩阵型液晶显示器件及其制造方法
CN1677206A (zh) * 2004-03-30 2005-10-05 Lg.菲利浦Lcd株式会社 液晶显示器件
CN101419368A (zh) * 2007-10-23 2009-04-29 Nec液晶技术株式会社 横向电场型有源矩阵寻址液晶显示装置
CN201788341U (zh) * 2010-08-31 2011-04-06 京东方科技集团股份有限公司 阵列基板、液晶面板及液晶显示器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW575775B (en) * 2001-01-29 2004-02-11 Hitachi Ltd Liquid crystal display device
JP4199501B2 (ja) * 2002-09-13 2008-12-17 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
KR101258591B1 (ko) * 2005-12-23 2013-05-02 엘지디스플레이 주식회사 액정표시장치 및 그 구동방법
US8212953B2 (en) * 2005-12-26 2012-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101222955B1 (ko) * 2005-12-28 2013-01-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101288837B1 (ko) * 2006-06-29 2013-07-23 엘지디스플레이 주식회사 횡전계방식 액정표시소자 및 그 제조 방법
KR101066029B1 (ko) * 2008-06-25 2011-09-20 엘지디스플레이 주식회사 액정표시장치용 어레이 기판
BRPI1013033A2 (pt) * 2009-05-18 2016-04-05 Sharp Kk "painel de cristal líquido e método para inspecionar painel de cristal líquido".
CN101995709B (zh) 2009-08-27 2012-10-03 北京京东方光电科技有限公司 Ffs型tft-lcd阵列基板及其制造方法
CN102012590B (zh) 2009-09-04 2012-02-29 京东方科技集团股份有限公司 Ffs型tft-lcd阵列基板及其制造方法
CN102023430B (zh) * 2009-09-17 2012-02-29 京东方科技集团股份有限公司 Ffs型tft-lcd阵列基板及其制造方法
CN102655165B (zh) * 2011-03-28 2015-04-29 京东方科技集团股份有限公司 一种非晶氧化物薄膜晶体管及其制作方法、显示面板
KR20140055848A (ko) * 2012-11-01 2014-05-09 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1420386A (zh) * 2001-11-15 2003-05-28 日本电气株式会社 平面开关模式有源矩阵型液晶显示器件及其制造方法
CN1677206A (zh) * 2004-03-30 2005-10-05 Lg.菲利浦Lcd株式会社 液晶显示器件
CN101419368A (zh) * 2007-10-23 2009-04-29 Nec液晶技术株式会社 横向电场型有源矩阵寻址液晶显示装置
CN201788341U (zh) * 2010-08-31 2011-04-06 京东方科技集团股份有限公司 阵列基板、液晶面板及液晶显示器

Also Published As

Publication number Publication date
US9612497B2 (en) 2017-04-04
US9897880B2 (en) 2018-02-20
US20170153524A1 (en) 2017-06-01
US20160195745A1 (en) 2016-07-07
CN103676376A (zh) 2014-03-26
WO2015085641A1 (zh) 2015-06-18

Similar Documents

Publication Publication Date Title
CN103676376B (zh) 阵列基板及其制作方法及应用该阵列基板的液晶显示面板
CN105633016A (zh) Tft基板的制作方法及制得的tft基板
CN205229635U (zh) 像素结构、阵列基板及显示装置
CN104965366A (zh) 阵列彩膜集成式液晶显示面板的制作方法及其结构
CN102799014B (zh) 液晶显示面板的制作方法
CN104965333A (zh) Coa型液晶显示面板及其制作方法
CN102736325B (zh) 一种像素结构及其制造方法、显示装置
CN202339463U (zh) 薄膜晶体管液晶显示器像素结构及液晶显示器
CN104503150A (zh) 液晶面板及其制作方法
CN106094366B (zh) Ips型阵列基板的制作方法及ips型阵列基板
CN104880847A (zh) IPS型On Cell触控显示面板及其制作方法
CN103151359A (zh) 一种显示装置、阵列基板及其制作方法
CN104898913B (zh) 互电容触控显示面板及其制作方法
CN100592176C (zh) 面内切换模式液晶显示器件及其制造方法
CN105093750A (zh) Tft阵列基板结构及其制作方法
CN104898318A (zh) IPS型In Cell触控显示面板及其制作方法
CN103018986B (zh) 阵列基板及其制备和驱动方法、液晶显示面板
CN101561594B (zh) Ffs模式液晶显示装置的阵列基板及其制造方法
CN102709237A (zh) 薄膜场效应晶体管阵列基板及其制造方法、电子器件
CN103676390B (zh) 一种阵列基板及其制作方法、显示装置
CN105514032A (zh) Ips型tft-lcd阵列基板的制作方法及ips型tft-lcd阵列基板
CN103217826B (zh) 液晶面板
JP2012234180A (ja) カラーフィルター基板、及びその製造方法と装置
CN103235454B (zh) 彩色滤光片基板及其氧化铟锡薄膜图案结构、制作方法、液晶显示器
CN203232230U (zh) 一种阵列基板及显示装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Patentee after: TCL Huaxing Photoelectric Technology Co., Ltd

Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen

Patentee before: Shenzhen Huaxing Optoelectronic Technology Co., Ltd.