CN104898913B - 互电容触控显示面板及其制作方法 - Google Patents

互电容触控显示面板及其制作方法 Download PDF

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CN104898913B
CN104898913B CN201510368573.4A CN201510368573A CN104898913B CN 104898913 B CN104898913 B CN 104898913B CN 201510368573 A CN201510368573 A CN 201510368573A CN 104898913 B CN104898913 B CN 104898913B
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徐向阳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种互电容触控显示面板及其制作方法。该互电容触控显示面板将触控发射电极(4)集成在CF基板(2)远离液晶层(3)的一侧，将透明的触控感应电极(5)集成在CF基板(2)靠近液晶层(3)的一侧，且触控感应电极(5)经过高温退火处理。该互电容触控显示面板的制作方法，于液晶层(3)形成以前在CF基板(2)靠近液晶层(3)一侧的表面上制作出透明的触控感应电极(5)，并采用高温退火来降低触控感应电极(5)的电阻，再在CF基板(2)与TFT基板(1)对组、液晶层(3)形成以后在CF基板(2)远离液晶层(3)一侧的表面上制作出触控发射电极(4)。本发明能够降低触控感应电极的电阻，提升触控显示面板的触控灵敏度。

Description

互电容触控显示面板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种互电容触控显示面板及其制作方法。
背景技术
随着显示技术的飞速发展，触控显示面板已经广泛地被人们所接受及使用，如智能手机、平板电脑等均使用了触控显示面板。触控显示面板采用嵌入式触控技术将触控面板和液晶显示面板结合为一体，并将触控面板功能嵌入到液晶显示面板内，使得液晶显示面板同时具备显示和感知触控输入的功能。
液晶显示面板的通常是由一彩色滤光片基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。按照液晶的取向方式不同，目前主流市场上的液晶显示面板可以分为以下几种类型：垂直配向(Vertical Alignment，VA)型、扭曲向列(Twisted Nematic，TN)或超扭曲向列(SuperTwisted Nematic，STN)型、平面转换(In-Plane Switching，IPS)型、及边缘场开关(FringeField Switching，FFS)型。
触控显示面板依感应技术不同可分为电阻式、电容式、光学式、音波式四种，目前主流的触控技术为电容式，其中电容式又分为自电容式和互电容式，目前市场上的电容式触控显示面板为主要为互电容式，互电容的优点在于可实现多点触控。触控显示面板根据结构不同可划分为：触控电路覆盖于液晶盒上式(On Cell)，触控电路内嵌在液晶盒内式(In Cell)、以及外挂式。其中，In cell式具有成本低、超薄、和窄边框的优点，主要应用在高端触控产品中，但由于In cell式触控技术工艺难度较大，信号干扰等因素，其灵敏度较差。目前市场上应用最多的触控显示面板仍为外挂式，外挂式的优点在于灵敏度高，响应速度快，但缺点是成本高，产品超薄化受限制。On Cell式集成了外挂式和In cell式的优点，既能提高灵敏度又能降低面板厚度，但由于在On Cell式触控显示面板的制作过程中，只能在液晶成盒之后在面板表面镀用于制作触控电路的透明电极氧化铟锡(ITO)，ITO退火温度受限制，因此电阻很难降低，导致触控灵敏度提高受限。
发明内容
本发明的目的在于提供一种互电容触控显示面板，其触控感应电极的电阻较低，触控灵敏度较高。
本发明的目的还在于提供一种互电容触控显示面板的制作方法，能够在不增加制程工艺、不影响面板开口率的情况下，降低触控感应电极的电阻，提升触控显示面板的触控灵敏度。
为实现上述目的，本发明提供一种互电容触控显示面板，包括：TFT阵列基板、与所述TFT阵列基板相对设置的CF基板、夹设于所述TFT阵列基板与CF基板之间的液晶层、设于所述CF基板远离液晶层一侧的数条相互平行的触控发射电极、及设于所述CF基板靠近液晶层一侧的数条相互平行且在空间上垂直于触控发射电极的透明的触控感应电极；
所述触控感应电极经过高温退火处理。
所述CF基板包括基板，所述数条触控发射电极设于该基板远离液晶层一侧的表面上，所述数条触控感应电极设于该基板靠近液晶层一侧的表面上；所述CF基板还包括设于所述基板与数条触控感应电极上的彩色色阻、将所述彩色色阻间隔开的黑色矩阵、设于所述黑色矩阵上的光阻间隔物、及覆盖所述彩色色阻、黑色矩阵、与光阻间隔物的配向膜。
所述触控感应电极的材料为ITO。
所述触控感应电极的厚度为
所述触控发射电极的材料为ITO或金属。
本发明还提供一种互电容触控显示面板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板的一侧表面上镀一层透明导电膜，然后通过掩膜刻蚀工艺对所述透明导电膜进行图案化处理，形成数条相互平行的透明的触控感应电极；
步骤2、对所述数条相互平行的透明的触控感应电极进行高温退火，以降低触控感应电极的电阻；
步骤3、通过掩膜刻蚀工艺依次在所述基板与触控感应电极上制作出黑色矩阵、彩色色阻、及光阻间隔物；
其中，所述黑色矩阵将彩色色阻间隔开，所述光阻间隔物设于所述黑色矩阵上；
步骤4、在所述彩色色阻、黑色矩阵、与光阻间隔物上涂布配向液，形成配向膜，完成CF基板的制作；
步骤5、提供一TFT阵列基板，将TFT阵列基板与CF基板对组，使所述触控感应电极朝向TFT阵列基板，向TFT阵列基板与CF基板之间灌入液晶，形成液晶层；
步骤6、在CF基板的基板远离液晶层一侧的表面上镀一层导电膜，然后通过掩膜刻蚀工艺对所述导电膜进行图案化处理，形成数条相互平行且在空间上垂直于触控感应电极的触控发射电极。
所述步骤1中的透明导电膜的材料为ITO。
所述透明导电膜的厚度为
所述步骤6中导电膜的材料为ITO或金属。
所述基板为玻璃基板。
本发明的有益效果：本发明提供的一种互电容触控显示面板，将触控发射电极集成在CF基板远离液晶层的一侧，将透明的触控感应电极集成在CF基板靠近液晶层的一侧，且触控感应电极经过高温退火处理，从而触控感应电极的电阻较低，触控显示面板的触控灵敏度较高。本发明提供的一种互电容触控显示面板的制作方法，于液晶层形成以前在CF基板靠近液晶层一侧的表面上制作出透明的触控感应电极，并采用高温退火来降低触控感应电极的电阻，再在CF基板与TFT基板对组、液晶层形成以后在CF基板远离液晶层一侧的表面上制作出触控发射电极，实现了在不增加制程工艺、不影响面板开口率的情况下，降低触控感应电极的电阻，提升触控显示面板的触控灵敏度。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的互电容触控显示面板的剖面结构示意图；
图2为本发明的互电容触控显示面板的触控感应电极和触控发射电极的俯视示意图；
图3为本发明的互电容触控显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图1与图2，本发明首先提供一种互电容触控显示面板，包括：TFT阵列基板1、与所述TFT阵列基板1相对设置的CF基板2、夹设于所述TFT阵列基板1与CF基板2之间的液晶层3、设于所述CF基板2远离液晶层3一侧的数条相互平行的触控发射电极4、及设于所述CF基板2靠近液晶层3一侧的数条相互平行且在空间上垂直于触控发射电极4的透明的触控感应电极5。
所述TFT阵列基板1包括衬底基板、栅极、栅极绝缘层、半导体层、源\漏极、像素电极、保护层、梳形公共电极、配向膜等，与现有技术中IPS型和FFS型液晶显示面板的TFT阵列基板无异，此处不展开详述。
所述CF基板2包括基板21，所述数条触控发射电极4设于该基板1远离液晶层3一侧的表面上，所述数条触控感应电极5设于该基板1靠近液晶层3一侧的表面上；所述CF基板2还包括设于所述基板21与数条触控感应电极5上的彩色色阻22、将所述彩色色阻22间隔开的黑色矩阵23、设于所述黑色矩阵23上的光阻间隔物24、及覆盖所述彩色色阻22、黑色矩阵23、与光阻间隔物24的配向膜25。
所述触控感应电极5经过高温退火处理。
具体地，所述基板21为玻璃基板。
所述触控感应电极5的材料为氧化铟锡(ITO)，厚度为
所述触控发射电极4的材料可为ITO，也可为金属。
本发明的互电容触控显示面板将触控发射电极4集成在CF基板2远离液晶层3的一侧，将透明的触控感应电极5集成在CF基板2靠近液晶层3的一侧，且触控感应电极5经过高温退火处理，从而触控感应电极5的电阻较低，触控显示面板的触控灵敏度较高。
请参阅图3，结合图1与图2，本发明还提供一种互电容触控显示面板的制作方法，包括如下步骤：
步骤1、提供一基板21，在所述基板21的一侧表面上镀一层透明导电膜，然后通过掩膜刻蚀工艺对所述透明导电膜进行图案化处理，形成数条相互平行的透明的触控感应电极5。
具体地，所述基板21优选为玻璃基板；所述透明导电膜的材料为ITO，厚度为
步骤2、对所述数条相互平行的透明的触控感应电极5进行高温退火，以降低触控感应电极5的电阻。
步骤3、通过掩膜刻蚀工艺依次在所述基板21与触控感应电极5上制作出黑色矩阵23、彩色色阻22、及光阻间隔物24。
其中，所述黑色矩阵23将彩色色阻22间隔开，所述光阻间隔物24设于所述黑色矩阵23上。
步骤4、在所述彩色色阻22、黑色矩阵23、与光阻间隔物24上涂布配向液，形成配向膜25，完成CF基板2的制作。
步骤5、提供一TFT阵列基板1，将TFT阵列基板1与CF基板2对组，使所述触控感应电极5朝向TFT阵列基板1，向TFT阵列基板1与CF基板2之间灌入液晶，形成液晶层3。
其中，所述TFT阵列基板1的结构及制程过程与现有技术中IPS型和FFS型液晶显示面板的TFT阵列基板无异，此处不展开详述。
步骤6、在CF基板2的基板21远离液晶层3一侧的表面上镀一层导电膜，然后通过掩膜刻蚀工艺对所述导电膜进行图案化处理，形成数条相互平行且在空间上垂直于触控感应电极5的触控发射电极4。
具体地，所述导电膜的材料为ITO或金属。
本发明的互电容触控显示面板的制作方法，于液晶层3形成以前在CF基板2靠近液晶层3一侧的表面上制作出透明的触控感应电极5，并采用高温退火来降低触控感应电极5的电阻，再在CF基板2与TFT基板1对组、液晶层3形成以后在CF基板2远离液晶层3一侧的表面上制作出触控发射电极4，实现了在不增加制程工艺、不影响面板开口率的情况下，降低触控感应电极5的电阻，提升触控显示面板的触控灵敏度。
综上所述，本发明的互电容触控显示面板，将触控发射电极集成在CF基板远离液晶层的一侧，将透明的触控感应电极集成在CF基板靠近液晶层的一侧，且触控感应电极经过高温退火处理，从而触控感应电极的电阻较低，触控显示面板的触控灵敏度较高。本发明的互电容触控显示面板的制作方法，于液晶层形成以前在CF基板靠近液晶层一侧的表面上制作出透明的触控感应电极，并采用高温退火来降低触控感应电极的电阻，再在CF基板与TFT基板对组、液晶层形成以后在CF基板远离液晶层一侧的表面上制作出触控发射电极，实现了在不增加制程工艺、不影响面板开口率的情况下，降低触控感应电极的电阻，提升触控显示面板的触控灵敏度。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种互电容触控显示面板，其特征在于，包括：TFT阵列基板(1)、与所述TFT阵列基板(1)相对设置的CF基板(2)、夹设于所述TFT阵列基板(1)与CF基板(2)之间的液晶层(3)、设于所述CF基板(2)远离液晶层(3)一侧的数条相互平行的触控发射电极(4)、及设于所述CF基板(2)靠近液晶层(3)一侧的数条相互平行且在空间上垂直于触控发射电极(4)的透明的触控感应电极(5)；
所述触控感应电极(5)经过高温退火处理；
所述CF基板(2)包括基板(21)、设于所述基板(21)与数条触控感应电极(5)上的彩色色阻(22)、将所述彩色色阻(22)间隔开的黑色矩阵(23)；所述数条触控发射电极(4)设于该基板(21)远离液晶层(3)一侧的表面上，所述数条触控感应电极(5)设于该基板(21)靠近液晶层(3)一侧的表面上；
所述触控感应电极(5)的材料为ITO。
2.如权利要求1所述的互电容触控显示面板，其特征在于，所述CF基板(2)还包括设于所述黑色矩阵(23)上的光阻间隔物(24)、及覆盖所述彩色色阻(22)、黑色矩阵(23)、与光阻间隔物(24)的配向膜(25)。
3.如权利要求1所述的互电容触控显示面板，其特征在于，所述触控感应电极(5)的厚度为
4.如权利要求1所述的互电容触控显示面板，其特征在于，所述触控发射电极(4)的材料为ITO或金属。
5.一种互电容触控显示面板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(21)，在所述基板(21)的一侧表面上镀一层透明导电膜，然后通过掩膜刻蚀工艺对所述透明导电膜进行图案化处理，形成数条相互平行的透明的触控感应电极(5)；
步骤2、对所述数条相互平行的透明的触控感应电极(5)进行高温退火，以降低触控感应电极(5)的电阻；
步骤3、通过掩膜刻蚀工艺依次在所述基板(21)与触控感应电极(5)上制作出黑色矩阵(23)、彩色色阻(22)、及光阻间隔物(24)；
其中，所述彩色色阻(22)设于所述基板(21)与数条触控感应电极(5)上，所述黑色矩阵(23)将彩色色阻(22)间隔开，所述光阻间隔物(24)设于所述黑色矩阵(23)上；
步骤4、在所述彩色色阻(22)、黑色矩阵(23)、与光阻间隔物(24)上涂布配向液，形成配向膜(25)，完成CF基板(2)的制作；
步骤5、提供一TFT阵列基板(1)，将TFT阵列基板(1)与CF基板(2)对组，使所述触控感应电极(5)朝向TFT阵列基板(1)，向TFT阵列基板(1)与CF基板(2)之间灌入液晶，形成液晶层(3)；
步骤6、在CF基板(2)的基板(21)远离液晶层(3)一侧的表面上镀一层导电膜，然后通过掩膜刻蚀工艺对所述导电膜进行图案化处理，形成数条相互平行且在空间上垂直于触控感应电极(5)的触控发射电极(4)；
所述步骤1中的透明导电膜的材料为ITO。
6.如权利要求5所述的互电容触控显示面板的制作方法，其特征在于，所述透明导电膜的厚度为
7.如权利要求5所述的互电容触控显示面板的制作方法，其特征在于，所述步骤6中导电膜的材料为ITO或金属。
8.如权利要求5所述的互电容触控显示面板的制作方法，其特征在于，所述基板(21)为玻璃基板。
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