CN103608793A - 用于dqs选通的系统和方法 - Google Patents
用于dqs选通的系统和方法 Download PDFInfo
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- CN103608793A CN103608793A CN201280029420.1A CN201280029420A CN103608793A CN 103608793 A CN103608793 A CN 103608793A CN 201280029420 A CN201280029420 A CN 201280029420A CN 103608793 A CN103608793 A CN 103608793A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
- G06F13/1668—Details of memory controller
- G06F13/1689—Synchronisation and timing concerns
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/14—Handling requests for interconnection or transfer
- G06F13/16—Handling requests for interconnection or transfer for access to memory bus
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
Abstract
Description
Claims (22)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161496965P | 2011-06-14 | 2011-06-14 | |
US61/496,965 | 2011-06-14 | ||
US201161540142P | 2011-09-28 | 2011-09-28 | |
US61/540,142 | 2011-09-28 | ||
PCT/US2012/040710 WO2012173807A1 (en) | 2011-06-14 | 2012-06-04 | System and method for dqs gating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103608793A true CN103608793A (zh) | 2014-02-26 |
CN103608793B CN103608793B (zh) | 2016-10-26 |
Family
ID=46276015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280029420.1A Active CN103608793B (zh) | 2011-06-14 | 2012-06-04 | 用于dqs选通的系统和方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9001599B2 (zh) |
EP (1) | EP2721500B1 (zh) |
JP (1) | JP6057438B2 (zh) |
KR (1) | KR101903718B1 (zh) |
CN (1) | CN103608793B (zh) |
WO (1) | WO2012173807A1 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107179881A (zh) * | 2016-03-11 | 2017-09-19 | 联发科技股份有限公司 | 存储系统控制方法及相关存储装置 |
CN108416176A (zh) * | 2018-04-28 | 2018-08-17 | 珠海市微半导体有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108899057A (zh) * | 2018-06-12 | 2018-11-27 | 豪威科技(上海)有限公司 | 读dqs信号门选通训练方法、装置以及数据传输系统 |
CN109644041A (zh) * | 2016-05-25 | 2019-04-16 | 通用电气航空系统有限公司 | 飞行器时间同步系统 |
CN110648703A (zh) * | 2018-06-26 | 2020-01-03 | 龙芯中科技术有限公司 | 数据采集电路、读数据窗口的控制方法及装置 |
US10636497B2 (en) | 2017-12-13 | 2020-04-28 | Winbond Electronics Corp. | Semiconductor memory device, manufacturing method thereof and output method of data strobe signal |
WO2023216751A1 (zh) * | 2022-05-09 | 2023-11-16 | 腾讯科技(深圳)有限公司 | 存储器的校验管脚处理方法、装置、设备、存储介质和计算机程序产品 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104272283B (zh) * | 2012-05-01 | 2017-08-04 | 马维尔国际贸易有限公司 | 用于dqs选通的系统和方法 |
US9431089B2 (en) * | 2012-06-12 | 2016-08-30 | Rambus Inc. | Optimizing power in a memory device |
US9524255B2 (en) | 2013-05-28 | 2016-12-20 | Marvell World Trade Ltd. | System and method for automatic DQS gating based on counter signal |
US9368172B2 (en) * | 2014-02-03 | 2016-06-14 | Rambus Inc. | Read strobe gating mechanism |
US10176862B1 (en) | 2018-01-26 | 2019-01-08 | Micron Technology, Inc. | Data strobe gating |
JP2021150843A (ja) | 2020-03-19 | 2021-09-27 | キオクシア株式会社 | 半導体集積回路、受信装置、及び受信装置の制御方法 |
Citations (3)
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CN101030441A (zh) * | 2006-02-28 | 2007-09-05 | 中国科学院计算技术研究所 | Ddr和ddr2内存控制器的读数据采样方法及装置 |
CN101042925A (zh) * | 2006-03-21 | 2007-09-26 | 联发科技股份有限公司 | 存储器控制器,存储器装置以及选通信号校准方法 |
US7911857B1 (en) * | 2009-06-10 | 2011-03-22 | Juniper Networks, Inc. | Preamble detection and postamble closure for a memory interface controller |
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US6085345A (en) * | 1997-12-24 | 2000-07-04 | Intel Corporation | Timing control for input/output testability |
TWI228259B (en) * | 2000-05-22 | 2005-02-21 | Samsung Electronics Co Ltd | Method and circuit for inputting and outputting data, and system using semiconductor memory device including the same |
JP3605033B2 (ja) * | 2000-11-21 | 2004-12-22 | Necエレクトロニクス株式会社 | 固定長遅延生成回路 |
US6600681B1 (en) | 2002-06-10 | 2003-07-29 | Lsi Logic Corporation | Method and apparatus for calibrating DQS qualification in a memory controller |
US7089509B2 (en) * | 2002-12-23 | 2006-08-08 | Sun Microsystems, Inc. | Controlling the propagation of a control signal by means of variable I/O delay compensation using a programmable delay circuit and detection sequence |
US7299306B2 (en) * | 2003-06-20 | 2007-11-20 | Broadcom Corporation | Dual numerically controlled delay logic for DQS gating |
JP4284527B2 (ja) * | 2004-03-26 | 2009-06-24 | 日本電気株式会社 | メモリインターフェイス制御回路 |
JP2005292947A (ja) * | 2004-03-31 | 2005-10-20 | Hitachi Ltd | データ処理装置、遅延回路及び遅延素子 |
US7215584B2 (en) | 2005-07-01 | 2007-05-08 | Lsi Logic Corporation | Method and/or apparatus for training DQS strobe gating |
US7685393B2 (en) * | 2006-06-30 | 2010-03-23 | Mosaid Technologies Incorporated | Synchronous memory read data capture |
JP2008103013A (ja) * | 2006-10-18 | 2008-05-01 | Nec Electronics Corp | メモリリード制御回路およびその制御方法 |
JP5061722B2 (ja) * | 2007-05-24 | 2012-10-31 | 富士通セミコンダクター株式会社 | 信号マスキング回路、及び、その回路を搭載した半導体集積回路 |
JP4967850B2 (ja) * | 2007-06-26 | 2012-07-04 | ソニー株式会社 | メモリインタフェース回路 |
US7590025B2 (en) * | 2007-12-19 | 2009-09-15 | Integrated Device Technology, Inc. | Systems and methods for clean DQS signal generation in source-synchronous DDR2 interface design |
-
2012
- 2012-06-04 JP JP2014515863A patent/JP6057438B2/ja active Active
- 2012-06-04 CN CN201280029420.1A patent/CN103608793B/zh active Active
- 2012-06-04 US US13/487,737 patent/US9001599B2/en active Active
- 2012-06-04 WO PCT/US2012/040710 patent/WO2012173807A1/en active Application Filing
- 2012-06-04 KR KR1020137033243A patent/KR101903718B1/ko active IP Right Grant
- 2012-06-04 EP EP12727523.8A patent/EP2721500B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101030441A (zh) * | 2006-02-28 | 2007-09-05 | 中国科学院计算技术研究所 | Ddr和ddr2内存控制器的读数据采样方法及装置 |
CN101042925A (zh) * | 2006-03-21 | 2007-09-26 | 联发科技股份有限公司 | 存储器控制器,存储器装置以及选通信号校准方法 |
US7911857B1 (en) * | 2009-06-10 | 2011-03-22 | Juniper Networks, Inc. | Preamble detection and postamble closure for a memory interface controller |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107179881A (zh) * | 2016-03-11 | 2017-09-19 | 联发科技股份有限公司 | 存储系统控制方法及相关存储装置 |
CN109644041A (zh) * | 2016-05-25 | 2019-04-16 | 通用电气航空系统有限公司 | 飞行器时间同步系统 |
CN109644041B (zh) * | 2016-05-25 | 2021-06-25 | 通用电气航空系统有限公司 | 飞行器时间同步系统 |
US10636497B2 (en) | 2017-12-13 | 2020-04-28 | Winbond Electronics Corp. | Semiconductor memory device, manufacturing method thereof and output method of data strobe signal |
CN108416176A (zh) * | 2018-04-28 | 2018-08-17 | 珠海市微半导体有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108416176B (zh) * | 2018-04-28 | 2023-09-08 | 珠海一微半导体股份有限公司 | 一种dram控制器的抗干扰方法和电路及芯片 |
CN108899057A (zh) * | 2018-06-12 | 2018-11-27 | 豪威科技(上海)有限公司 | 读dqs信号门选通训练方法、装置以及数据传输系统 |
CN108899057B (zh) * | 2018-06-12 | 2020-09-18 | 豪威科技(上海)有限公司 | 读dqs信号门选通训练方法、装置以及数据传输系统 |
CN110648703A (zh) * | 2018-06-26 | 2020-01-03 | 龙芯中科技术有限公司 | 数据采集电路、读数据窗口的控制方法及装置 |
CN110648703B (zh) * | 2018-06-26 | 2021-06-15 | 龙芯中科技术股份有限公司 | 数据采集电路、读数据窗口的控制方法及装置 |
WO2023216751A1 (zh) * | 2022-05-09 | 2023-11-16 | 腾讯科技(深圳)有限公司 | 存储器的校验管脚处理方法、装置、设备、存储介质和计算机程序产品 |
Also Published As
Publication number | Publication date |
---|---|
JP2014517422A (ja) | 2014-07-17 |
US20120324193A1 (en) | 2012-12-20 |
KR101903718B1 (ko) | 2018-10-04 |
CN103608793B (zh) | 2016-10-26 |
US9001599B2 (en) | 2015-04-07 |
WO2012173807A1 (en) | 2012-12-20 |
KR20140043390A (ko) | 2014-04-09 |
JP6057438B2 (ja) | 2017-01-11 |
EP2721500B1 (en) | 2015-08-12 |
EP2721500A1 (en) | 2014-04-23 |
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Effective date of registration: 20200427 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200427 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Patentee before: Marvell International Ltd. Effective date of registration: 20200427 Address after: Hamilton, Bermuda Patentee after: Marvell International Ltd. Address before: Babado J San Mega Le Patentee before: MARVELL WORLD TRADE Ltd. |