CN103579146A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN103579146A
CN103579146A CN201310083762.8A CN201310083762A CN103579146A CN 103579146 A CN103579146 A CN 103579146A CN 201310083762 A CN201310083762 A CN 201310083762A CN 103579146 A CN103579146 A CN 103579146A
Authority
CN
China
Prior art keywords
interconnection
terminal
switching element
semiconductor device
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310083762.8A
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English (en)
Chinese (zh)
Inventor
高尾和人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN103579146A publication Critical patent/CN103579146A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/12—Modifications for increasing the maximum permissible switched current
    • H03K17/127—Modifications for increasing the maximum permissible switched current in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Power Conversion In General (AREA)
CN201310083762.8A 2012-07-31 2013-03-15 半导体装置 Pending CN103579146A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012170279A JP5710555B2 (ja) 2012-07-31 2012-07-31 半導体装置
JP2012-170279 2012-07-31

Publications (1)

Publication Number Publication Date
CN103579146A true CN103579146A (zh) 2014-02-12

Family

ID=50024884

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310083762.8A Pending CN103579146A (zh) 2012-07-31 2013-03-15 半导体装置

Country Status (3)

Country Link
US (1) US8866535B2 (enExample)
JP (1) JP5710555B2 (enExample)
CN (1) CN103579146A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106165095A (zh) * 2014-02-14 2016-11-23 Abb 瑞士有限公司 具有两个辅助发射极导体路径的半导体模块

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028646B (zh) * 2016-05-19 2021-05-11 富士电机株式会社 绝缘栅型半导体装置以及绝缘栅型半导体装置的制造方法
JP6910726B2 (ja) * 2017-09-25 2021-07-28 三菱電機株式会社 半導体集積回路
JP7447480B2 (ja) * 2019-12-23 2024-03-12 富士電機株式会社 電子回路、半導体モジュール及び半導体装置
JP2023006385A (ja) * 2021-06-30 2023-01-18 株式会社Flosfia 半導体装置
JP7258113B1 (ja) * 2021-12-16 2023-04-14 三菱電機株式会社 電力変換装置
US11804837B1 (en) * 2022-06-15 2023-10-31 Delta Electronics, Inc. Switch circuit and power module
DE102023004643A1 (de) 2023-11-15 2025-05-15 Mercedes-Benz Group AG Vorrichtung und Verfahren zum Testen und zur Durchführung von Load- und Sourcedumps

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0911969A1 (fr) * 1997-10-22 1999-04-28 STMicroelectronics SA Circuit amplificateur à double gain
JP2003298355A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk ミキサおよび差動アンプ
US7109798B2 (en) * 2004-10-29 2006-09-19 Broadcom Corporation Method and system for common mode feedback circuitry for RF buffers
US7265623B2 (en) * 2004-08-03 2007-09-04 Scintera Networks, Inc. Differential amplifier having independently tunable base gain, peak gain and boost frequency, and uses of same
US7282993B2 (en) * 2003-03-28 2007-10-16 Nec Electronics Corporation Frequency characteristics-variable amplifying circuit and semiconductor integrated circuit device
CN101447767A (zh) * 2007-11-30 2009-06-03 三菱电机株式会社 差动放大器电路
US20120112241A1 (en) * 2010-11-08 2012-05-10 Kabushiki Kaisha Toshiba Semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3696285A (en) * 1970-04-14 1972-10-03 Ibm Inverter circuits utilizing minority carrier injection in a semiconductor deivce
JP4115882B2 (ja) 2003-05-14 2008-07-09 株式会社ルネサステクノロジ 半導体装置
JP2006319621A (ja) * 2005-05-12 2006-11-24 Matsushita Electric Ind Co Ltd 発振器およびこれを用いたｐｌｌ回路
US7599754B2 (en) * 2006-06-05 2009-10-06 National Institute Of Advanced Industrial Science And Technology Method and system for designing a power converter
ITMI20070141A1 (it) * 2007-01-30 2008-07-31 St Microelectronics Srl Circuito di pilotaggio per una configurazione emitter-switching di transistori
JP2009278772A (ja) * 2008-05-14 2009-11-26 Toyota Industries Corp インバータモジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0911969A1 (fr) * 1997-10-22 1999-04-28 STMicroelectronics SA Circuit amplificateur à double gain
JP2003298355A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk ミキサおよび差動アンプ
US7282993B2 (en) * 2003-03-28 2007-10-16 Nec Electronics Corporation Frequency characteristics-variable amplifying circuit and semiconductor integrated circuit device
US7265623B2 (en) * 2004-08-03 2007-09-04 Scintera Networks, Inc. Differential amplifier having independently tunable base gain, peak gain and boost frequency, and uses of same
US7109798B2 (en) * 2004-10-29 2006-09-19 Broadcom Corporation Method and system for common mode feedback circuitry for RF buffers
CN101447767A (zh) * 2007-11-30 2009-06-03 三菱电机株式会社 差动放大器电路
US20120112241A1 (en) * 2010-11-08 2012-05-10 Kabushiki Kaisha Toshiba Semiconductor device
CN102544003A (zh) * 2010-11-08 2012-07-04 株式会社东芝 半导体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106165095A (zh) * 2014-02-14 2016-11-23 Abb 瑞士有限公司 具有两个辅助发射极导体路径的半导体模块
CN106165095B (zh) * 2014-02-14 2018-10-19 Abb 瑞士有限公司 具有两个辅助发射极导体路径的半导体模块

Also Published As

Publication number Publication date
US20140035656A1 (en) 2014-02-06
US8866535B2 (en) 2014-10-21
JP2014030321A (ja) 2014-02-13
JP5710555B2 (ja) 2015-04-30

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