CN103534757B - 磁记录介质及其制造方法以及磁记录再生装置 - Google Patents
磁记录介质及其制造方法以及磁记录再生装置 Download PDFInfo
- Publication number
- CN103534757B CN103534757B CN201280023252.5A CN201280023252A CN103534757B CN 103534757 B CN103534757 B CN 103534757B CN 201280023252 A CN201280023252 A CN 201280023252A CN 103534757 B CN103534757 B CN 103534757B
- Authority
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- China
- Prior art keywords
- layer
- magnetic
- seed layer
- recording media
- magnetic recording
- Prior art date
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 260
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000013078 crystal Substances 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 53
- 230000010415 tropism Effects 0.000 claims abstract description 45
- 150000004767 nitrides Chemical class 0.000 claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 230000001172 regenerating effect Effects 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 5
- 239000010952 cobalt-chrome Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 196
- 239000006249 magnetic particle Substances 0.000 description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 19
- 229910052681 coesite Inorganic materials 0.000 description 19
- 229910052906 cristobalite Inorganic materials 0.000 description 19
- 239000000377 silicon dioxide Substances 0.000 description 19
- 229910052682 stishovite Inorganic materials 0.000 description 19
- 229910052905 tridymite Inorganic materials 0.000 description 19
- 239000002245 particle Substances 0.000 description 15
- 229910052697 platinum Inorganic materials 0.000 description 15
- 230000005294 ferromagnetic effect Effects 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 229910052804 chromium Inorganic materials 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 12
- 229910052715 tantalum Inorganic materials 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 150000001247 metal acetylides Chemical class 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 229910017083 AlN Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- -1 MgO Metal oxide Chemical class 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001050 lubricating effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052702 rhenium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910000929 Ru alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229910015372 FeAl Inorganic materials 0.000 description 2
- 229910002546 FeCo Inorganic materials 0.000 description 2
- 229910002555 FeNi Inorganic materials 0.000 description 2
- 229910000604 Ferrochrome Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910020442 SiO2—TiO2 Inorganic materials 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005303 antiferromagnetism Effects 0.000 description 2
- 230000000739 chaotic effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019586 CoZrTa Inorganic materials 0.000 description 1
- 229910019912 CrN Inorganic materials 0.000 description 1
- 229910005347 FeSi Inorganic materials 0.000 description 1
- 229910005435 FeTaN Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 229910003082 TiO2-SiO2 Inorganic materials 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- WUPRCGRRQUZFAB-DEGKJRJSSA-N corrin Chemical compound N1C2CC\C1=C\C(CC/1)=N\C\1=C/C(CC\1)=N/C/1=C\C1=NC2CC1 WUPRCGRRQUZFAB-DEGKJRJSSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000006123 lithium glass Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000700 radioactive tracer Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP110354/2011 | 2011-05-17 | ||
JP2011110354 | 2011-05-17 | ||
PCT/JP2012/062277 WO2012157600A1 (ja) | 2011-05-17 | 2012-05-14 | 磁気記録媒体及びその製造方法、並びに磁気記録再生装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103534757A CN103534757A (zh) | 2014-01-22 |
CN103534757B true CN103534757B (zh) | 2016-08-17 |
Family
ID=47176917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280023252.5A Active CN103534757B (zh) | 2011-05-17 | 2012-05-14 | 磁记录介质及其制造方法以及磁记录再生装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9245563B2 (ja) |
JP (1) | JPWO2012157600A1 (ja) |
CN (1) | CN103534757B (ja) |
WO (1) | WO2012157600A1 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
MY176000A (en) | 2012-10-10 | 2020-07-21 | Fuji Electric Co Ltd | Magnetic recording medium |
US9461242B2 (en) | 2013-09-13 | 2016-10-04 | Micron Technology, Inc. | Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems |
US9608197B2 (en) | 2013-09-18 | 2017-03-28 | Micron Technology, Inc. | Memory cells, methods of fabrication, and semiconductor devices |
US10454024B2 (en) | 2014-02-28 | 2019-10-22 | Micron Technology, Inc. | Memory cells, methods of fabrication, and memory devices |
US9281466B2 (en) | 2014-04-09 | 2016-03-08 | Micron Technology, Inc. | Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication |
US9349945B2 (en) | 2014-10-16 | 2016-05-24 | Micron Technology, Inc. | Memory cells, semiconductor devices, and methods of fabrication |
US9768377B2 (en) * | 2014-12-02 | 2017-09-19 | Micron Technology, Inc. | Magnetic cell structures, and methods of fabrication |
US9990940B1 (en) | 2014-12-30 | 2018-06-05 | WD Media, LLC | Seed structure for perpendicular magnetic recording media |
US10439131B2 (en) | 2015-01-15 | 2019-10-08 | Micron Technology, Inc. | Methods of forming semiconductor devices including tunnel barrier materials |
JP2017079090A (ja) * | 2015-10-22 | 2017-04-27 | 株式会社東芝 | 磁気記録媒体、及び磁気記録再生装置 |
MY181803A (en) * | 2016-01-12 | 2021-01-07 | Fuji Electric Co Ltd | Magnetic recording medium |
JP6803045B2 (ja) * | 2017-06-08 | 2020-12-23 | 昭和電工株式会社 | 磁気記録媒体および磁気記憶装置 |
JP2020043133A (ja) * | 2018-09-06 | 2020-03-19 | キオクシア株式会社 | 磁気記憶装置 |
JP7283273B2 (ja) * | 2019-07-01 | 2023-05-30 | 株式会社レゾナック | 磁気記録媒体およびその製造方法ならびに磁気記録再生装置 |
US11763845B2 (en) * | 2021-12-08 | 2023-09-19 | Seagate Technology Llc | Magnetic stack including non-magnetic seed layer for hard disk drive media |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1870145A (zh) * | 2005-05-27 | 2006-11-29 | 株式会社东芝 | 垂直磁性记录介质及垂直磁性记录/再现装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6174582B1 (en) * | 1998-02-06 | 2001-01-16 | International Business Machines Corporation | Thin film magnetic disk having reactive element doped refractory metal seed layer |
US6541131B1 (en) * | 2000-05-25 | 2003-04-01 | Seagate Technology Llc | Perpendicular recording media with enhanced coercivity |
CN1447966A (zh) * | 2000-12-28 | 2003-10-08 | 日立麦克赛尔株式会社 | 磁记录介质及其制造方法以及磁存储设备 |
JP2002237026A (ja) | 2001-02-08 | 2002-08-23 | Fujitsu Ltd | 磁気記録媒体、磁気記録媒体の製造方法、及び、磁気記録装置 |
JP2004134041A (ja) | 2002-10-15 | 2004-04-30 | Hitachi Ltd | 垂直磁気記録媒体およびその製造方法ならびに磁気記憶装置 |
JP4136590B2 (ja) | 2002-10-23 | 2008-08-20 | キヤノン株式会社 | 配向膜、配向膜を利用した磁気記録媒体、及び磁気記録再生装置 |
JP4102221B2 (ja) | 2003-03-07 | 2008-06-18 | 富士通株式会社 | 磁気記録媒体の製造方法 |
JP4185391B2 (ja) | 2003-04-07 | 2008-11-26 | 昭和電工株式会社 | 磁気記録媒体、その製造方法および磁気記録再生装置 |
JP2005071525A (ja) | 2003-08-27 | 2005-03-17 | Fujitsu Ltd | 垂直磁気記録媒体および磁気記憶装置 |
JP3954553B2 (ja) | 2003-09-30 | 2007-08-08 | 富士通株式会社 | 記録媒体およびその製造方法 |
US7081309B2 (en) | 2004-03-23 | 2006-07-25 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic recording disk with antiferromagnetically-coupled magnetic layer having multiple ferromagnetically-coupled lower layers |
JP4470881B2 (ja) | 2005-12-27 | 2010-06-02 | 昭和電工株式会社 | 磁気記録媒体、および磁気記録再生装置 |
JP2007272990A (ja) | 2006-03-31 | 2007-10-18 | Fujitsu Ltd | 磁気記録媒体及びその製造方法 |
JP2008204539A (ja) | 2007-02-20 | 2008-09-04 | Fujitsu Ltd | 垂直磁気記録媒体およびその製造方法、磁気記録装置 |
JP2009116952A (ja) | 2007-11-06 | 2009-05-28 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体およびこれを用いた磁気記憶装置 |
JP2009289360A (ja) * | 2008-05-30 | 2009-12-10 | Fujitsu Ltd | 垂直磁気記録媒体及び磁気記憶装置 |
-
2012
- 2012-05-14 WO PCT/JP2012/062277 patent/WO2012157600A1/ja active Application Filing
- 2012-05-14 US US14/114,641 patent/US9245563B2/en active Active
- 2012-05-14 JP JP2013515145A patent/JPWO2012157600A1/ja active Pending
- 2012-05-14 CN CN201280023252.5A patent/CN103534757B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1870145A (zh) * | 2005-05-27 | 2006-11-29 | 株式会社东芝 | 垂直磁性记录介质及垂直磁性记录/再现装置 |
Also Published As
Publication number | Publication date |
---|---|
US9245563B2 (en) | 2016-01-26 |
US20140063656A1 (en) | 2014-03-06 |
WO2012157600A1 (ja) | 2012-11-22 |
CN103534757A (zh) | 2014-01-22 |
JPWO2012157600A1 (ja) | 2014-07-31 |
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