CN103534757B - 磁记录介质及其制造方法以及磁记录再生装置 - Google Patents

磁记录介质及其制造方法以及磁记录再生装置 Download PDF

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Publication number
CN103534757B
CN103534757B CN201280023252.5A CN201280023252A CN103534757B CN 103534757 B CN103534757 B CN 103534757B CN 201280023252 A CN201280023252 A CN 201280023252A CN 103534757 B CN103534757 B CN 103534757B
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China
Prior art keywords
layer
magnetic
seed layer
recording media
magnetic recording
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CN201280023252.5A
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Chinese (zh)
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CN103534757A (zh
Inventor
桥本笃志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lishennoco Co ltd
Resonac Holdings Corp
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Showa Denko KK
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Publication of CN103534757A publication Critical patent/CN103534757A/zh
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/64Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/667Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7379Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10Methods of surface bonding and/or assembly therefor

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  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN201280023252.5A 2011-05-17 2012-05-14 磁记录介质及其制造方法以及磁记录再生装置 Active CN103534757B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP110354/2011 2011-05-17
JP2011110354 2011-05-17
PCT/JP2012/062277 WO2012157600A1 (ja) 2011-05-17 2012-05-14 磁気記録媒体及びその製造方法、並びに磁気記録再生装置

Publications (2)

Publication Number Publication Date
CN103534757A CN103534757A (zh) 2014-01-22
CN103534757B true CN103534757B (zh) 2016-08-17

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CN201280023252.5A Active CN103534757B (zh) 2011-05-17 2012-05-14 磁记录介质及其制造方法以及磁记录再生装置

Country Status (4)

Country Link
US (1) US9245563B2 (ja)
JP (1) JPWO2012157600A1 (ja)
CN (1) CN103534757B (ja)
WO (1) WO2012157600A1 (ja)

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FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
MY176000A (en) 2012-10-10 2020-07-21 Fuji Electric Co Ltd Magnetic recording medium
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) * 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US9990940B1 (en) 2014-12-30 2018-06-05 WD Media, LLC Seed structure for perpendicular magnetic recording media
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
JP2017079090A (ja) * 2015-10-22 2017-04-27 株式会社東芝 磁気記録媒体、及び磁気記録再生装置
MY181803A (en) * 2016-01-12 2021-01-07 Fuji Electric Co Ltd Magnetic recording medium
JP6803045B2 (ja) * 2017-06-08 2020-12-23 昭和電工株式会社 磁気記録媒体および磁気記憶装置
JP2020043133A (ja) * 2018-09-06 2020-03-19 キオクシア株式会社 磁気記憶装置
JP7283273B2 (ja) * 2019-07-01 2023-05-30 株式会社レゾナック 磁気記録媒体およびその製造方法ならびに磁気記録再生装置
US11763845B2 (en) * 2021-12-08 2023-09-19 Seagate Technology Llc Magnetic stack including non-magnetic seed layer for hard disk drive media

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CN1870145A (zh) * 2005-05-27 2006-11-29 株式会社东芝 垂直磁性记录介质及垂直磁性记录/再现装置

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US6174582B1 (en) * 1998-02-06 2001-01-16 International Business Machines Corporation Thin film magnetic disk having reactive element doped refractory metal seed layer
US6541131B1 (en) * 2000-05-25 2003-04-01 Seagate Technology Llc Perpendicular recording media with enhanced coercivity
CN1447966A (zh) * 2000-12-28 2003-10-08 日立麦克赛尔株式会社 磁记录介质及其制造方法以及磁存储设备
JP2002237026A (ja) 2001-02-08 2002-08-23 Fujitsu Ltd 磁気記録媒体、磁気記録媒体の製造方法、及び、磁気記録装置
JP2004134041A (ja) 2002-10-15 2004-04-30 Hitachi Ltd 垂直磁気記録媒体およびその製造方法ならびに磁気記憶装置
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JP4102221B2 (ja) 2003-03-07 2008-06-18 富士通株式会社 磁気記録媒体の製造方法
JP4185391B2 (ja) 2003-04-07 2008-11-26 昭和電工株式会社 磁気記録媒体、その製造方法および磁気記録再生装置
JP2005071525A (ja) 2003-08-27 2005-03-17 Fujitsu Ltd 垂直磁気記録媒体および磁気記憶装置
JP3954553B2 (ja) 2003-09-30 2007-08-08 富士通株式会社 記録媒体およびその製造方法
US7081309B2 (en) 2004-03-23 2006-07-25 Hitachi Global Storage Technologies Netherlands B.V. Magnetic recording disk with antiferromagnetically-coupled magnetic layer having multiple ferromagnetically-coupled lower layers
JP4470881B2 (ja) 2005-12-27 2010-06-02 昭和電工株式会社 磁気記録媒体、および磁気記録再生装置
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JP2009116952A (ja) 2007-11-06 2009-05-28 Hitachi Global Storage Technologies Netherlands Bv 垂直磁気記録媒体およびこれを用いた磁気記憶装置
JP2009289360A (ja) * 2008-05-30 2009-12-10 Fujitsu Ltd 垂直磁気記録媒体及び磁気記憶装置

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Also Published As

Publication number Publication date
US9245563B2 (en) 2016-01-26
US20140063656A1 (en) 2014-03-06
WO2012157600A1 (ja) 2012-11-22
CN103534757A (zh) 2014-01-22
JPWO2012157600A1 (ja) 2014-07-31

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Address after: Tokyo, Japan

Patentee after: Lishennoco Co.,Ltd.

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Patentee before: Showa electrical materials Co.,Ltd.

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Effective date of registration: 20230421

Address after: Tokyo, Japan

Patentee after: Showa electrical materials Co.,Ltd.

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Patentee before: SHOWA DENKO Kabushiki Kaisha

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