CN103529108B - 气体传感器和用于制造这种气体传感器的方法 - Google Patents
气体传感器和用于制造这种气体传感器的方法 Download PDFInfo
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- CN103529108B CN103529108B CN201310306951.7A CN201310306951A CN103529108B CN 103529108 B CN103529108 B CN 103529108B CN 201310306951 A CN201310306951 A CN 201310306951A CN 103529108 B CN103529108 B CN 103529108B
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
- G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012211460.2 | 2012-07-03 | ||
| DE102012211460.2A DE102012211460A1 (de) | 2012-07-03 | 2012-07-03 | Gassensor und Verfahren zum Herstellen eines solchen |
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| CN103529108A CN103529108A (zh) | 2014-01-22 |
| CN103529108B true CN103529108B (zh) | 2018-04-24 |
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| JP (1) | JP6312119B2 (fr) |
| CN (1) | CN103529108B (fr) |
| DE (1) | DE102012211460A1 (fr) |
| FR (1) | FR2993052B1 (fr) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014215421A1 (de) | 2014-08-05 | 2016-02-11 | Robert Bosch Gmbh | Mikromechanische Gassensorvorrichtung und entsprechendes Herstellungsverfahren |
| JP6792141B2 (ja) * | 2016-06-23 | 2020-11-25 | 富士通株式会社 | ガスセンサ及びその使用方法 |
| DE102017200156A1 (de) * | 2017-01-09 | 2018-07-12 | Robert Bosch Gmbh | Herstellungsverfahren für eine mikromechanische Sensorvorrichtung und entsprechende mikromechanische Sensorvorrichtung |
| CN109490391B (zh) * | 2018-10-12 | 2020-08-25 | 华东师范大学 | 一种氧化锆复合氧化钨纳米管no2气体传感器的制备方法 |
Citations (1)
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| JP2011080996A (ja) * | 2009-10-08 | 2011-04-21 | Robert Bosch Gmbh | 気体感応型の半導体装置 |
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| JP2687254B2 (ja) * | 1990-11-08 | 1997-12-08 | 株式会社オーク製作所 | ガス感応素子 |
| US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| SE9901440A0 (en) * | 1999-04-22 | 2000-10-23 | Ind Mikroelektronik Centrum Ab | A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof |
| FR2872914B1 (fr) * | 2004-07-07 | 2006-10-13 | Univ Rennes I Etablissement Pu | Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants |
| US7632760B2 (en) * | 2005-04-07 | 2009-12-15 | Semiconductor Components Industries, Llc | Semiconductor device having field stabilization film and method |
| JP2007017312A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi Ltd | 半導体ガスセンサとその製造方法 |
| DE102007003541A1 (de) * | 2007-01-24 | 2008-07-31 | Robert Bosch Gmbh | Elektronisches Bauteil |
| JP5208537B2 (ja) * | 2008-02-19 | 2013-06-12 | 株式会社東芝 | 不揮発性記憶素子 |
| JP2011124240A (ja) * | 2008-03-31 | 2011-06-23 | Tokyo Electron Ltd | Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体 |
| JP5168725B2 (ja) * | 2008-07-08 | 2013-03-27 | 住友電気工業株式会社 | ガスセンサ |
| DE102008054752A1 (de) * | 2008-12-16 | 2010-06-17 | Robert Bosch Gmbh | Gassensor mit Feldeffekttransistor |
| EP2417441B1 (fr) * | 2009-04-06 | 2018-05-30 | Sensic Ab | Détecteur de gaz |
| US9018684B2 (en) * | 2009-11-23 | 2015-04-28 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
| DE102010031167A1 (de) * | 2010-07-09 | 2012-01-12 | Robert Bosch Gmbh | Herstellungsverfahren für einen chemosensitiven Feldeffekttransistor |
| DE102010031153A1 (de) * | 2010-07-09 | 2012-01-12 | Robert Bosch Gmbh | Feldeffekttransistoren für Gassensoren |
| DE102011002854A1 (de) * | 2010-08-10 | 2012-02-16 | Robert Bosch Gmbh | Feldeffekt-Gassensor, Verfahren zur Herstellung eines Feldeffekt-Gassensors und Verfahren zur Detektion von Gas |
| JP5603193B2 (ja) * | 2010-09-29 | 2014-10-08 | 株式会社日立製作所 | ガスセンサ |
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2012
- 2012-07-03 DE DE102012211460.2A patent/DE102012211460A1/de not_active Withdrawn
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- 2013-07-02 CN CN201310306951.7A patent/CN103529108B/zh active Active
- 2013-07-03 FR FR1356486A patent/FR2993052B1/fr not_active Expired - Fee Related
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011080996A (ja) * | 2009-10-08 | 2011-04-21 | Robert Bosch Gmbh | 気体感応型の半導体装置 |
Non-Patent Citations (2)
| Title |
|---|
| Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors;Anne-Marije Andringa 等;《SENSORS AND ACTUATORS B-CHEMICAL》;20120701;第171卷;全文 * |
| Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors;Simon G.J.Mathijssen 等;《ADVANCED MATERIALS》;20100921;第22卷(第45期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103529108A (zh) | 2014-01-22 |
| JP6312119B2 (ja) | 2018-04-18 |
| FR2993052B1 (fr) | 2018-01-19 |
| FR2993052A1 (fr) | 2014-01-10 |
| DE102012211460A1 (de) | 2014-01-09 |
| JP2014013239A (ja) | 2014-01-23 |
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