FR2993052B1 - Capteur de gaz et son procede de fabrication - Google Patents
Capteur de gaz et son procede de fabrication Download PDFInfo
- Publication number
- FR2993052B1 FR2993052B1 FR1356486A FR1356486A FR2993052B1 FR 2993052 B1 FR2993052 B1 FR 2993052B1 FR 1356486 A FR1356486 A FR 1356486A FR 1356486 A FR1356486 A FR 1356486A FR 2993052 B1 FR2993052 B1 FR 2993052B1
- Authority
- FR
- France
- Prior art keywords
- gas sensor
- manufacturing same
- manufacturing
- same
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
- G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012211460.2 | 2012-07-03 | ||
| DE102012211460.2A DE102012211460A1 (de) | 2012-07-03 | 2012-07-03 | Gassensor und Verfahren zum Herstellen eines solchen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2993052A1 FR2993052A1 (fr) | 2014-01-10 |
| FR2993052B1 true FR2993052B1 (fr) | 2018-01-19 |
Family
ID=49770002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR1356486A Expired - Fee Related FR2993052B1 (fr) | 2012-07-03 | 2013-07-03 | Capteur de gaz et son procede de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6312119B2 (fr) |
| CN (1) | CN103529108B (fr) |
| DE (1) | DE102012211460A1 (fr) |
| FR (1) | FR2993052B1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014215421A1 (de) | 2014-08-05 | 2016-02-11 | Robert Bosch Gmbh | Mikromechanische Gassensorvorrichtung und entsprechendes Herstellungsverfahren |
| JP6792141B2 (ja) * | 2016-06-23 | 2020-11-25 | 富士通株式会社 | ガスセンサ及びその使用方法 |
| DE102017200156A1 (de) * | 2017-01-09 | 2018-07-12 | Robert Bosch Gmbh | Herstellungsverfahren für eine mikromechanische Sensorvorrichtung und entsprechende mikromechanische Sensorvorrichtung |
| CN109490391B (zh) * | 2018-10-12 | 2020-08-25 | 华东师范大学 | 一种氧化锆复合氧化钨纳米管no2气体传感器的制备方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2687254B2 (ja) * | 1990-11-08 | 1997-12-08 | 株式会社オーク製作所 | ガス感応素子 |
| US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| SE9901440A0 (en) * | 1999-04-22 | 2000-10-23 | Ind Mikroelektronik Centrum Ab | A field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof |
| FR2872914B1 (fr) * | 2004-07-07 | 2006-10-13 | Univ Rennes I Etablissement Pu | Capteur pour la detection et/ou la mesure d'une concentration de charges electriques contenues dans une ambiance, utilisations et procede de fabrication correspondants |
| US7632760B2 (en) * | 2005-04-07 | 2009-12-15 | Semiconductor Components Industries, Llc | Semiconductor device having field stabilization film and method |
| JP2007017312A (ja) * | 2005-07-08 | 2007-01-25 | Hitachi Ltd | 半導体ガスセンサとその製造方法 |
| DE102007003541A1 (de) * | 2007-01-24 | 2008-07-31 | Robert Bosch Gmbh | Elektronisches Bauteil |
| JP5208537B2 (ja) * | 2008-02-19 | 2013-06-12 | 株式会社東芝 | 不揮発性記憶素子 |
| JP2011124240A (ja) * | 2008-03-31 | 2011-06-23 | Tokyo Electron Ltd | Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体 |
| JP5168725B2 (ja) * | 2008-07-08 | 2013-03-27 | 住友電気工業株式会社 | ガスセンサ |
| DE102008054752A1 (de) * | 2008-12-16 | 2010-06-17 | Robert Bosch Gmbh | Gassensor mit Feldeffekttransistor |
| EP2417441B1 (fr) * | 2009-04-06 | 2018-05-30 | Sensic Ab | Détecteur de gaz |
| DE102009045475B4 (de) * | 2009-10-08 | 2023-06-29 | Robert Bosch Gmbh | Gassensitive Halbleitervorrichtung sowie deren Verwendung |
| US9018684B2 (en) * | 2009-11-23 | 2015-04-28 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
| DE102010031167A1 (de) * | 2010-07-09 | 2012-01-12 | Robert Bosch Gmbh | Herstellungsverfahren für einen chemosensitiven Feldeffekttransistor |
| DE102010031153A1 (de) * | 2010-07-09 | 2012-01-12 | Robert Bosch Gmbh | Feldeffekttransistoren für Gassensoren |
| DE102011002854A1 (de) * | 2010-08-10 | 2012-02-16 | Robert Bosch Gmbh | Feldeffekt-Gassensor, Verfahren zur Herstellung eines Feldeffekt-Gassensors und Verfahren zur Detektion von Gas |
| JP5603193B2 (ja) * | 2010-09-29 | 2014-10-08 | 株式会社日立製作所 | ガスセンサ |
-
2012
- 2012-07-03 DE DE102012211460.2A patent/DE102012211460A1/de not_active Withdrawn
-
2013
- 2013-07-02 CN CN201310306951.7A patent/CN103529108B/zh active Active
- 2013-07-03 FR FR1356486A patent/FR2993052B1/fr not_active Expired - Fee Related
- 2013-07-03 JP JP2013139727A patent/JP6312119B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103529108A (zh) | 2014-01-22 |
| JP6312119B2 (ja) | 2018-04-18 |
| FR2993052A1 (fr) | 2014-01-10 |
| DE102012211460A1 (de) | 2014-01-09 |
| JP2014013239A (ja) | 2014-01-23 |
| CN103529108B (zh) | 2018-04-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PLFP | Fee payment |
Year of fee payment: 4 |
|
| PLSC | Publication of the preliminary search report |
Effective date: 20170616 |
|
| PLFP | Fee payment |
Year of fee payment: 5 |
|
| PLFP | Fee payment |
Year of fee payment: 6 |
|
| PLFP | Fee payment |
Year of fee payment: 7 |
|
| PLFP | Fee payment |
Year of fee payment: 8 |
|
| PLFP | Fee payment |
Year of fee payment: 9 |
|
| PLFP | Fee payment |
Year of fee payment: 10 |
|
| ST | Notification of lapse |
Effective date: 20240305 |