CN103515396A - 光电二极管阵列 - Google Patents

光电二极管阵列 Download PDF

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Publication number
CN103515396A
CN103515396A CN201310235175.6A CN201310235175A CN103515396A CN 103515396 A CN103515396 A CN 103515396A CN 201310235175 A CN201310235175 A CN 201310235175A CN 103515396 A CN103515396 A CN 103515396A
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CN
China
Prior art keywords
photodiode array
separating tank
region
photodiode
light
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Pending
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CN201310235175.6A
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English (en)
Chinese (zh)
Inventor
山路和树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN103515396A publication Critical patent/CN103515396A/zh
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
CN201310235175.6A 2012-06-15 2013-06-14 光电二极管阵列 Pending CN103515396A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012136073A JP5983076B2 (ja) 2012-06-15 2012-06-15 フォトダイオードアレイ
JP2012-136073 2012-06-15

Publications (1)

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CN103515396A true CN103515396A (zh) 2014-01-15

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CN201310235175.6A Pending CN103515396A (zh) 2012-06-15 2013-06-14 光电二极管阵列

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JP (1) JP5983076B2 (ja)
CN (1) CN103515396A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107154413A (zh) * 2016-03-03 2017-09-12 精工半导体有限公司 具有受光元件的半导体装置
CN109585484A (zh) * 2018-12-04 2019-04-05 德淮半导体有限公司 图像传感器及其形成方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6287612B2 (ja) * 2014-06-16 2018-03-07 住友電気工業株式会社 赤外線受光半導体素子
JP2017204561A (ja) * 2016-05-11 2017-11-16 株式会社東芝 光検出器、光検出装置、およびライダー装置
JP2020155503A (ja) 2019-03-19 2020-09-24 株式会社東芝 光検出装置
JP7163858B2 (ja) * 2019-04-18 2022-11-01 日本電信電話株式会社 受光装置
JP7445152B2 (ja) * 2019-11-18 2024-03-07 日本電信電話株式会社 アバランシェフォトダイオード
JP6836300B1 (ja) * 2020-09-10 2021-02-24 株式会社京都セミコンダクター 面入射型半導体受光素子
US20230327040A1 (en) * 2021-01-21 2023-10-12 Mitsubishi Electric Corporation Avalanche photo diode
JPWO2022201798A1 (ja) * 2021-03-22 2022-09-29

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157564A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of image reading line sensor
JPS6236858A (ja) * 1985-08-10 1987-02-17 Fujitsu Ltd 半導体受光装置
US6246097B1 (en) * 1998-03-20 2001-06-12 Oki Electric Industry Co., Ltd. Semiconductor photodetector
CN1386305A (zh) * 2000-07-18 2002-12-18 日本板硝子株式会社 受光元件阵列

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281266A (ja) * 2006-04-10 2007-10-25 Sumitomo Electric Ind Ltd 裏面入射型フォトダイオードアレイおよびセンサ
JP5294558B2 (ja) * 2006-12-19 2013-09-18 三菱電機株式会社 埋込導波路型受光素子とその製造方法
JP4861887B2 (ja) * 2007-04-20 2012-01-25 日本オプネクスト株式会社 半導体受光装置、光受信モジュールおよび半導体受光装置の製造方法
JP5394966B2 (ja) * 2010-03-29 2014-01-22 日本オクラロ株式会社 半導体受光素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157564A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of image reading line sensor
JPS6236858A (ja) * 1985-08-10 1987-02-17 Fujitsu Ltd 半導体受光装置
US6246097B1 (en) * 1998-03-20 2001-06-12 Oki Electric Industry Co., Ltd. Semiconductor photodetector
CN1386305A (zh) * 2000-07-18 2002-12-18 日本板硝子株式会社 受光元件阵列

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107154413A (zh) * 2016-03-03 2017-09-12 精工半导体有限公司 具有受光元件的半导体装置
CN109585484A (zh) * 2018-12-04 2019-04-05 德淮半导体有限公司 图像传感器及其形成方法

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Publication number Publication date
JP5983076B2 (ja) 2016-08-31
JP2014003083A (ja) 2014-01-09

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Application publication date: 20140115