JP6287612B2 - 赤外線受光半導体素子 - Google Patents
赤外線受光半導体素子 Download PDFInfo
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- JP6287612B2 JP6287612B2 JP2014123534A JP2014123534A JP6287612B2 JP 6287612 B2 JP6287612 B2 JP 6287612B2 JP 2014123534 A JP2014123534 A JP 2014123534A JP 2014123534 A JP2014123534 A JP 2014123534A JP 6287612 B2 JP6287612 B2 JP 6287612B2
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- 239000004065 semiconductor Substances 0.000 title claims description 125
- 239000011347 resin Substances 0.000 claims description 68
- 229920005989 resin Polymers 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 230000031700 light absorption Effects 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 13
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 12
- 239000010931 gold Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 101000701411 Homo sapiens Suppressor of tumorigenicity 7 protein Proteins 0.000 description 5
- 102100030517 Suppressor of tumorigenicity 7 protein Human genes 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- GJRQTCIYDGXPES-UHFFFAOYSA-N iso-butyl acetate Natural products CC(C)COC(C)=O GJRQTCIYDGXPES-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-M isocaproate Chemical compound CC(C)CCC([O-])=O FGKJLKRYENPLQH-UHFFFAOYSA-M 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- OQAGVSWESNCJJT-UHFFFAOYSA-N isovaleric acid methyl ester Natural products COC(=O)CC(C)C OQAGVSWESNCJJT-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Light Receiving Elements (AREA)
Description
図3及び図4は、本実施の形態に係る半導体受光素子を作製する方法に係る実施例を模式的に示す図面である。n型InP基板を準備する。エピ成長工程では、n型InP基板上に、n型InPバッファ層、受光層、アンドープのInGaAs層、p型InGaAs 層、及びp+型InGaAs層をエピタキシャルに成長して、エピタキシャル基板Eを形成する。この成長は、有機金属気相成長法、或いは分子線エピタキシー法が適用される。
n型InPバッファ層:厚み0.5μm。
光吸収層:アンドープのInGaAs/GaAsSbの多重量子井戸構造、厚み5nm/5nm×250ペア。
アンドープのInGaAs層:厚み0.2μm。
p型InGaAs 層:厚み0.5μm、キャリア濃度 1〜3×1018cm−3。
p+型InGaAs層:厚み0.2μm、キャリア濃度 1〜3×1019cm−3。
n導電性を付与するために、n型ドーパントとして例えばシリコン(Si)が利用される。p導電性を付与するために、p型ドーパントとして例えば亜鉛(Zn)または炭素(C)が利用される。
Claims (6)
- 赤外線受光半導体素子であって、
複数の素子エリアの配列を有しており各素子エリアの第1エリア及び第2エリアを含む主面を有する基板と、
赤外線に感応する光吸収層を有し画素のための半導体メサを含み前記基板の前記第1エリア上に設けられたポストと、
前記ポストの側面に接触を成す第1面を有しており、前記基板の前記第2エリア上に設けられ、前記第2エリアに接触を成す第2面を有する樹脂体と、
を備え、
前記第2エリアは該第1エリアを囲み、
前記樹脂体は、前記第1エリア内の第1点から前記第2エリア内の第2点を通過して延在する半直線上において前記第2エリア内に位置する第21点及び第22点でそれぞれ第21厚及び第22厚を有しており、前記樹脂体の表面は、前記半直線を通過すると共に前記基板の前記主面の法線軸の方向に延在する基準面によって規定される断面において、前記基板から前記ポストへ向かう方向への凸形状の第3面を前記第2エリア上に有して前記第21厚から前記第22厚まで単調に変化しており、前記第21厚は前記第22厚より大きく、前記第1点から前記第22点までの距離は、前記第1点から前記第21点までの距離より大きい、赤外線受光半導体素子。 - 前記樹脂体の前記表面上に設けられた金属層を更に備える、請求項1に記載された赤外線受光半導体素子。
- 前記樹脂体は波長0.7μm〜3μmの光を透過可能な材料を備える、請求項1又は請求項2に記載された赤外線受光半導体素子。
- 前記樹脂体がフッ素樹脂を備える、請求項1〜請求項3のいずれか一項に記載された赤外線受光半導体素子。
- 前記ポストは、前記半導体メサの側面上に設けられた無機絶縁膜を備える、請求項1〜請求項4のいずれか一項に記載された赤外線受光半導体素子。
- 前記半導体メサの上面上に設けられた電極を更に備え、
前記樹脂体は、前記半導体メサの前記上面に開口を有する、請求項1〜請求項5のいずれか一項に記載された赤外線受光半導体素子。
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JP2014123534A JP6287612B2 (ja) | 2014-06-16 | 2014-06-16 | 赤外線受光半導体素子 |
US14/737,310 US9373733B2 (en) | 2014-06-16 | 2015-06-11 | Semiconductor light-receiving device and semiconductor light-receiving device array |
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JP2017136926A (ja) * | 2016-02-02 | 2017-08-10 | 矢崎総業株式会社 | 車両用回路体および車両用回路配索システム |
JP2017195327A (ja) * | 2016-04-22 | 2017-10-26 | 住友電気工業株式会社 | 半導体受光装置 |
JP2017204561A (ja) * | 2016-05-11 | 2017-11-16 | 株式会社東芝 | 光検出器、光検出装置、およびライダー装置 |
JP6836300B1 (ja) * | 2020-09-10 | 2021-02-24 | 株式会社京都セミコンダクター | 面入射型半導体受光素子 |
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US5808350A (en) * | 1997-01-03 | 1998-09-15 | Raytheon Company | Integrated IR, visible and NIR sensor and methods of fabricating same |
JP3589878B2 (ja) | 1998-11-12 | 2004-11-17 | 日本電信電話株式会社 | 裏面入射型受光装置およびその作製方法 |
JP2007081225A (ja) * | 2005-09-15 | 2007-03-29 | Asahi Kasei Electronics Co Ltd | 赤外線センサ、および、その製造方法 |
JP2010040733A (ja) * | 2008-08-05 | 2010-02-18 | Toshiba Corp | 半導体装置 |
KR101643021B1 (ko) * | 2009-06-05 | 2016-07-26 | 내셔날 인스티튜트 오브 어드밴스드 인더스트리얼 사이언스 앤드 테크놀로지 | 반도체 기판, 광전 변환 디바이스, 반도체 기판의 제조 방법 및 광전 변환 디바이스의 제조 방법 |
US20110042647A1 (en) * | 2009-08-18 | 2011-02-24 | U.S. Government As Represented By The Secretary Of The Army | Corrugated-quantum well infrared photodetector with reflective sidewall and method |
JP2012160691A (ja) * | 2011-01-14 | 2012-08-23 | Sumitomo Electric Ind Ltd | 受光装置、光学装置および受光装置の製造方法 |
JP2013201219A (ja) * | 2012-03-23 | 2013-10-03 | Sumitomo Electric Ind Ltd | 受光素子、その製造方法、および検出装置 |
JP5983076B2 (ja) * | 2012-06-15 | 2016-08-31 | 三菱電機株式会社 | フォトダイオードアレイ |
JP6006602B2 (ja) * | 2012-10-09 | 2016-10-12 | 旭化成エレクトロニクス株式会社 | 量子型赤外線センサ及びその製造方法 |
US8816415B2 (en) * | 2012-11-29 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photodiode with concave reflector |
US8558339B1 (en) * | 2013-03-01 | 2013-10-15 | Mitsubishi Electric Corporation | Photo diode array |
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