JP2010040733A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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Abstract
【解決手段】本発明の一態様に係る半導体装置1は、光が入射する光入射面30bとフォトダイオード部30aとを有する半導体薄膜と、光入射面30bの反対側の半導体薄膜の表面の上方に設けられ、凸面62aを有する中間層62と、凸面62aの表面に設けられ、光をフォトダイオード部30aの方向へ反射する凹面70aを有する凹面反射層70とを備える半導体装置
【選択図】図1
Description
(半導体装置1の構成)
図1は、本発明の第1の実施の形態に係る半導体装置の断面の概要を示す。
第1の実施の形態に係る半導体装置1は、光電変換機能を有するフォトダイオード部30aを有すると共に、光入射面30bを有する半導体薄膜としてのp型Si薄膜30と、p型Si薄膜30の光入射面30bの反対側の表面の一部の領域に形成されるゲート酸化膜40と、ゲート酸化膜40上に形成されるゲート電極45と、p型Si薄膜30のゲート電極45が形成されている側の表面、及びゲート酸化膜40、並びにゲート電極45を覆う酸化膜50と、酸化膜50のp型Si薄膜30側の反対側の表面の一部に設けられる中間層62と、中間層62の表面を覆う凹面反射層70と、凹面反射層70の表面及び酸化膜50の一部の表面を覆って設けられる層間絶縁膜80と、層間絶縁膜80の表面80a上に設けられる配線層(図示しない)とを備える。
図2A〜図2Jは、本発明の第1の実施の形態に係る半導体装置の製造工程の概要を示す。
図3は、本発明の第1の実施の形態に係る半導体装置の動作の概要を示す。
図4は、本発明の第1の実施の形態に係る半導体装置の曲率中心の位置の概要を示す。
本実施の形態では、p型Si薄膜30を用いたが、n型のSi薄膜を用いることもできる。この場合、半導体装置1の各構成部分の導電型は本実施の形態の導電型とは逆にする。例えば、n型分離壁300はp型として構成する。そして、n+領域302及びn+層310はp型で構成され、p+領域304及びp+層312はn型で構成されることとなる。
本実施の形態に係る半導体装置1は、フォトダイオード部30aを含むp型Si薄膜30の光入射面30bの反対側に、凹面反射層70を備える。光入射面30bに入射した光の一部は、凹面反射層70によって反射される。そして、反射された光の経路は反射されることにより増大することがフォトダイオード部30aを通過する距離の増大に対応するので、フォトダイオード部30aにおける光電変換効率が向上する。これにより本実施の形態によれば、光感度が向上した半導体装置1を提供できる。
図5は、本発明の第2の実施の形態に係る半導体装置の断面の概要を示す。
第2の実施の形態に係る半導体装置1aは、高分子材料及び有機半導体から主として形成することができるので、屈曲性及び柔軟性を発揮する。したがって、本実施の形態によれば、凹面反射層71の存在により高い光感度を有すると共に、半導体装置1a自体を自由に曲げることができる光センサとしての半導体装置1aを提供できる。これにより、本実施の形態によれば、衣服等に貼り付けることのできる半導体装置1aを提供できる。
図6は、本発明の第3の実施の形態に係る半導体装置の断面の概要を示す。
Claims (5)
- 光が入射する光入射面とフォトダイオード部とを有する半導体薄膜と、
前記光入射面の反対側の前記半導体薄膜の表面の上方に設けられ、凸面を有する中間層と、
前記凸面の表面に設けられ、前記光を前記フォトダイオード部の方向へ反射する凹面を有する凹面反射層と
を備える半導体装置。 - 前記フォトダイオード部は、第1導電型の第1領域と前記第1導電型とは異なる第2導電型の第2領域とを含み、
前記中間層は、前記第1領域と前記第2領域との間の空乏層中に前記凹面の曲率中心が位置する形状の前記凸面を有する
請求項1に記載の半導体装置。 - 前記第1領域及び前記第2領域は、前記半導体薄膜中の一部分に形成され、前記第1領域及び前記第2領域を除く前記半導体薄膜よりも高い不純物濃度を有する
請求項2に記載の半導体装置。 - 柔軟性を有する透明基板と、
前記透明基板上に設けられる透明電極と、
前記透明電極の前記透明基板と接している面の反対側の一部に設けられる有機半導体層と、
前記有機半導体層の前記透明電極と接している面の反対側の表面の上方に設けられ、凸面を有する中間層と、
前記凸面の表面に設けられ、入射光を前記有機半導体層の方向へ反射する凹面を有する凹面反射層と
を備える半導体装置。 - 柔軟性を有し、可視光に対して透明な透明基板と、
前記透明基板上に設けられる透明電極と、
前記透明電極の前記透明基板と接している面の反対側の一部に設けられる有機半導体層と、
前記有機半導体層の前記透明電極と接している面の反対側の表面の上方に設けられる反射層と
を備える半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008201453A JP2010040733A (ja) | 2008-08-05 | 2008-08-05 | 半導体装置 |
TW098120479A TW201007936A (en) | 2008-08-05 | 2009-06-18 | Semiconductor device and method of fabricating the same |
CN200910159892A CN101645451A (zh) | 2008-08-05 | 2009-07-16 | 半导体器件及其制造方法 |
US12/506,650 US20100032659A1 (en) | 2008-08-05 | 2009-07-21 | Semiconductor device and method of fabricating the same |
KR1020090071571A KR101098636B1 (ko) | 2008-08-05 | 2009-08-04 | 반도체 소자 및 그 제조 방법 |
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JP2008201453A JP2010040733A (ja) | 2008-08-05 | 2008-08-05 | 半導体装置 |
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JP2012016765A Division JP2012129535A (ja) | 2012-01-30 | 2012-01-30 | 半導体装置 |
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JP2010040733A true JP2010040733A (ja) | 2010-02-18 |
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JP2008201453A Pending JP2010040733A (ja) | 2008-08-05 | 2008-08-05 | 半導体装置 |
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US (1) | US20100032659A1 (ja) |
JP (1) | JP2010040733A (ja) |
KR (1) | KR101098636B1 (ja) |
CN (1) | CN101645451A (ja) |
TW (1) | TW201007936A (ja) |
Cited By (2)
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JP2016004867A (ja) * | 2014-06-16 | 2016-01-12 | 住友電気工業株式会社 | 赤外線受光半導体素子 |
JP2020181944A (ja) * | 2019-04-26 | 2020-11-05 | キヤノン株式会社 | 光電変換装置、撮像システム、および、移動体 |
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JP5538811B2 (ja) * | 2009-10-21 | 2014-07-02 | キヤノン株式会社 | 固体撮像素子 |
KR20110055980A (ko) * | 2009-11-20 | 2011-05-26 | 주식회사 하이닉스반도체 | 리버스 이미지 센서 모듈 및 이의 제조 방법 |
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JP2014203961A (ja) * | 2013-04-04 | 2014-10-27 | ソニー株式会社 | 固体撮像装置およびその製造方法、ならびに電子機器 |
JP2014241363A (ja) | 2013-06-12 | 2014-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN103811511A (zh) * | 2014-03-07 | 2014-05-21 | 上海华虹宏力半导体制造有限公司 | 背照式图像传感器及其形成方法 |
US10147765B2 (en) * | 2015-12-18 | 2018-12-04 | Dpix, Llc | Test structures for manufacturing process of organic photo diode imaging array |
US10051218B1 (en) * | 2017-02-03 | 2018-08-14 | SmartSens Technology (U.S.), Inc. | Stacked image sensor pixel cell with in-pixel vertical channel transfer transistor and reflective structure |
CN108878572B (zh) * | 2018-07-10 | 2021-01-26 | 京东方科技集团股份有限公司 | 感光元件、光电传感探测基板及其制造方法 |
US11171172B2 (en) * | 2019-07-16 | 2021-11-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor and method of forming the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0427171A (ja) * | 1990-05-22 | 1992-01-30 | Mitsubishi Electric Corp | 半導体装置 |
JP2006261372A (ja) * | 2005-03-17 | 2006-09-28 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6122091A (en) * | 1997-10-14 | 2000-09-19 | California Institute Of Technology | Transmissive surface plasmon light valve |
US7071615B2 (en) * | 2001-08-20 | 2006-07-04 | Universal Display Corporation | Transparent electrodes |
JP4779304B2 (ja) | 2004-03-19 | 2011-09-28 | ソニー株式会社 | 固体撮像素子、カメラモジュール及び電子機器モジュール |
KR20070096115A (ko) * | 2005-12-29 | 2007-10-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
JP4525671B2 (ja) * | 2006-12-08 | 2010-08-18 | ソニー株式会社 | 固体撮像装置 |
US7982177B2 (en) * | 2008-01-31 | 2011-07-19 | Omnivision Technologies, Inc. | Frontside illuminated image sensor comprising a complex-shaped reflector |
-
2008
- 2008-08-05 JP JP2008201453A patent/JP2010040733A/ja active Pending
-
2009
- 2009-06-18 TW TW098120479A patent/TW201007936A/zh unknown
- 2009-07-16 CN CN200910159892A patent/CN101645451A/zh active Pending
- 2009-07-21 US US12/506,650 patent/US20100032659A1/en not_active Abandoned
- 2009-08-04 KR KR1020090071571A patent/KR101098636B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0427171A (ja) * | 1990-05-22 | 1992-01-30 | Mitsubishi Electric Corp | 半導体装置 |
JP2006261372A (ja) * | 2005-03-17 | 2006-09-28 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法および画像撮影装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016004867A (ja) * | 2014-06-16 | 2016-01-12 | 住友電気工業株式会社 | 赤外線受光半導体素子 |
JP2020181944A (ja) * | 2019-04-26 | 2020-11-05 | キヤノン株式会社 | 光電変換装置、撮像システム、および、移動体 |
JP7346071B2 (ja) | 2019-04-26 | 2023-09-19 | キヤノン株式会社 | 光電変換装置、撮像システム、および、移動体 |
Also Published As
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KR101098636B1 (ko) | 2011-12-23 |
KR20100017066A (ko) | 2010-02-16 |
CN101645451A (zh) | 2010-02-10 |
US20100032659A1 (en) | 2010-02-11 |
TW201007936A (en) | 2010-02-16 |
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