CN103442840B - 导电晶种层的激光移除 - Google Patents

导电晶种层的激光移除 Download PDF

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Publication number
CN103442840B
CN103442840B CN201280012947.3A CN201280012947A CN103442840B CN 103442840 B CN103442840 B CN 103442840B CN 201280012947 A CN201280012947 A CN 201280012947A CN 103442840 B CN103442840 B CN 103442840B
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CN
China
Prior art keywords
substrate
seed layer
crystal seed
laser
operate
Prior art date
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Active
Application number
CN201280012947.3A
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English (en)
Chinese (zh)
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CN103442840A (zh
Inventor
马修·E·苏特
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Tamarack Scientific Co Inc
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Tamarack Scientific Co Inc
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Publication of CN103442840A publication Critical patent/CN103442840A/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0626—Energy control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in an enclosure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN201280012947.3A 2011-01-13 2012-01-11 导电晶种层的激光移除 Active CN103442840B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161432539P 2011-01-13 2011-01-13
US61/432,539 2011-01-13
US13/348,063 2012-01-11
US13/348,063 US8778799B2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers
PCT/US2012/020983 WO2012097092A2 (en) 2011-01-13 2012-01-11 Laser removal of conductive seed layers

Publications (2)

Publication Number Publication Date
CN103442840A CN103442840A (zh) 2013-12-11
CN103442840B true CN103442840B (zh) 2015-07-01

Family

ID=46491096

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280012947.3A Active CN103442840B (zh) 2011-01-13 2012-01-11 导电晶种层的激光移除

Country Status (7)

Country Link
US (2) US8778799B2 (enExample)
EP (1) EP2663419A2 (enExample)
JP (1) JP5898699B2 (enExample)
KR (2) KR20140037044A (enExample)
CN (1) CN103442840B (enExample)
TW (1) TWI502683B (enExample)
WO (1) WO2012097092A2 (enExample)

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TWI504322B (zh) * 2012-03-29 2015-10-11 Taiwan Green Point Entpr Co 雙面電路板及其製備方法
US8741691B2 (en) * 2012-04-20 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating three dimensional integrated circuit
US9412702B2 (en) 2013-03-14 2016-08-09 Intel Corporation Laser die backside film removal for integrated circuit (IC) packaging
US8975177B2 (en) * 2013-03-14 2015-03-10 Intel Corporation Laser resist removal for integrated circuit (IC) packaging
US9908201B2 (en) * 2014-04-22 2018-03-06 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for edge bead removal
US9754823B2 (en) 2014-05-28 2017-09-05 International Business Machines Corporation Substrate including selectively formed barrier layer
WO2017034807A1 (en) * 2015-08-26 2017-03-02 Electro Scientific Industries, Inc. Laser scan sequencing and direction with respect to gas flow
WO2017052633A1 (en) * 2015-09-25 2017-03-30 Vivek Raghunathan Thin electronic package elements using laser spallation
EP3624571A1 (en) 2018-09-14 2020-03-18 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO A process for the manufacturing of printed conductive tracks on an object and 3d printed electronics
DE102019112030B4 (de) * 2019-05-08 2023-11-02 LSR Engineering & Consulting Limited Verfahren zum Strukturieren eines Substrats
TWI825194B (zh) * 2019-10-14 2023-12-11 雷立光國際股份有限公司 乾式晶圓回收設備
CN114554704A (zh) * 2022-03-25 2022-05-27 深圳市大族数控科技股份有限公司 线路板的制作方法
CN114513900A (zh) * 2022-03-25 2022-05-17 深圳市大族数控科技股份有限公司 加工设备
CN114885525B (zh) * 2022-03-25 2025-08-15 深圳市大族数控科技股份有限公司 线路板制作方法及线路板
US12288763B2 (en) * 2022-03-31 2025-04-29 Texas Instruments Incorporated Flip chip package assembly having post connects with solder-based joints
US20240181572A1 (en) * 2022-12-01 2024-06-06 Intel Corporation Dry method for metal-defined pad formation

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US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
CN101437644A (zh) * 2006-02-23 2009-05-20 皮科德昂有限公司 涂覆方法
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

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JPH1099978A (ja) * 1996-09-27 1998-04-21 Hitachi Ltd レーザー加工装置
JPH1128900A (ja) * 1997-05-12 1999-02-02 Sumitomo Heavy Ind Ltd レーザ光を用いた塗装除去方法及びレーザ処理装置
JPH11106911A (ja) 1997-10-08 1999-04-20 Canon Inc 薄膜形成装置及びそれを用いた化合物薄膜の形成法
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JP2000225487A (ja) * 1999-02-08 2000-08-15 Nippon Steel Corp レーザ切断用ノズル及びレーザ切断装置
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US5221426A (en) * 1991-11-29 1993-06-22 Motorola Inc. Laser etch-back process for forming a metal feature on a non-metal substrate
US6165892A (en) * 1998-07-31 2000-12-26 Kulicke & Soffa Holdings, Inc. Method of planarizing thin film layers deposited over a common circuit base
US20050020087A1 (en) * 2003-04-24 2005-01-27 Hermann Wagner Method and apparatus for removing an edge region of a layer applied to a substrate and for coating a substrate and a substrate
US20070032095A1 (en) * 2005-08-08 2007-02-08 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
CN101437644A (zh) * 2006-02-23 2009-05-20 皮科德昂有限公司 涂覆方法
WO2010123976A1 (en) * 2009-04-21 2010-10-28 Tetrasun, Inc. Method for forming structures in a solar cell

Also Published As

Publication number Publication date
EP2663419A2 (en) 2013-11-20
TW201238002A (en) 2012-09-16
KR20140037044A (ko) 2014-03-26
US20150014287A1 (en) 2015-01-15
JP2014504804A (ja) 2014-02-24
WO2012097092A3 (en) 2013-01-24
US9132511B2 (en) 2015-09-15
JP5898699B2 (ja) 2016-04-06
KR20160012250A (ko) 2016-02-02
WO2012097092A2 (en) 2012-07-19
TWI502683B (zh) 2015-10-01
HK1191608A1 (en) 2014-08-01
KR101706517B1 (ko) 2017-02-13
US20120184099A1 (en) 2012-07-19
US8778799B2 (en) 2014-07-15
CN103442840A (zh) 2013-12-11

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