CN103441085A - 一种芯片倒装bga封装方法 - Google Patents
一种芯片倒装bga封装方法 Download PDFInfo
- Publication number
- CN103441085A CN103441085A CN2013103805737A CN201310380573A CN103441085A CN 103441085 A CN103441085 A CN 103441085A CN 2013103805737 A CN2013103805737 A CN 2013103805737A CN 201310380573 A CN201310380573 A CN 201310380573A CN 103441085 A CN103441085 A CN 103441085A
- Authority
- CN
- China
- Prior art keywords
- metal
- chip
- substrate
- plastic packaging
- completes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明涉及一种芯片倒装BGA封装方法,所述方法包括以下步骤:步骤一、取一片基板;步骤二、装片;步骤三、安装金属凸块;步骤四、塑封;步骤五、研磨;步骤六、电镀金属层;步骤七、植球。本发明的有益效果是:它在不增加BGA封装厚度的情况下,通过封装工艺形成整体金属散热装置,其散热装置集成于BGA塑封体上,提高了整体散热效果。
Description
技术领域
本发明涉及一种芯片倒装BGA封装方法,属于半导体封装技术领域。
背景技术
现今,半导体封装产业为了满足各种高功耗芯片要求,其大多在BGA表面放置散热片(如图1所示),散热片虽然增加了封装TOP面的散热效果,但也因此增加了BGA产品的整体高度,很难应用于对BGA封装要求较薄的产品如手机、笔记本等手持设备,而AP等芯片由于考虑到多核运算等,其功率要求也越来越高,对散热的要求也越来越高,无散热片的形式难以胜任要求,但增加散热片又难以满足产品应用环境对厚度的要求。而且带散热片的BGA生产方法,通常是在BGA生产加工完后,再用胶料压合散热片,因此散热片并没有与基板或芯片表面的热源直接接触,其散热效果不好。
发明内容
本发明的目的在于克服上述不足,提供一种芯片倒装BGA封装方法,它在不增加BGA封装厚度的情况下,通过封装工艺将金属凸块集成于BGA 塑封体上,凸块底面与基板表面或芯片表面相接触,凸块顶面通过电镀工艺使其与塑封料表面电镀金属层构成一个整体的散热装置,由于金属凸块直接与基板表面或芯片表面相连,热量可以直接传导至电镀金属层表面,并通过电镀金属层表面与空气的对流辐射作用,提高了整体散热效果。
本发明的目的是这样实现的:一种芯片倒装BGA封装方法,所述方法包括以下步骤:
步骤一、取一片基板
取一片厚度合适的基板,此基板上含有印刷电路;
步骤二、装片
在基板的正面通过底部填充胶倒装上芯片;
步骤三、安装金属凸块
在步骤二完成装片的芯片周围的基板正面安装上多个第一金属块,在芯片正面安装上多个第二金属块;
步骤四、塑封
在步骤三完成金属凸块安装的基板正面进行环氧树脂塑封保护;
步骤五、研磨
在步骤四完成环氧树脂塑封后进行表面研磨,使第一金属凸块和第二金属凸块顶部露出塑封料表面;
步骤六、电镀金属层
在步骤五完成研磨后的塑封料表面电镀上一层金属层;
步骤七、植球
在步骤六完成电镀金属层后的基板背面植入多个金属球。
与现有技术相比,本发明具有以下有益效果:
本发明一种芯片倒装BGA封装方法,它在不增加BGA封装厚度的情况下,通过封装工艺将金属凸块集成于BGA 塑封体上,凸块底面与基板表面或芯片表面相接触,凸块顶面通过电镀工艺使其与塑封料表面电镀金属层构成一个整体散热装置,由于金属凸块直接与基板表面或芯片表面相连,热量可以直接传导至电镀金属层表面,并通过电镀金属层表面与空气的对流辐射作用,提高了整体散热效果;金属凸块可采用一些固定尺寸规格,方便批量生产,并且与基板、芯片表面的连接位置、接触面积可根据内部的结构、内部热点位置以及模流成型的需要进行灵活布置,有利于大批量生产,也克服了采用整块散热金属块因芯片大小不同、封装尺寸大小不同需要特制的现象。
附图说明
图1为以往常见的散热型BGA的结构示意图。
图2~图8为本发明一种芯片倒装BGA封装结构制造方法的各工序示意图。
图9为本发明一种芯片倒装BGA封装结构的示意图。
图10为本发明一种芯片倒装BGA封装结构另一实施例的示意图。
其中:
基板1
芯片2
底部填充胶3
第一金属凸块4
第二金属凸块5
塑封料6
金属层7
金属球8。
具体实施方式
参见图9,本发明一种芯片倒装BGA封装结构,它包括基板1,所述基板1正面通过底部填充胶3倒装有芯片2,所述芯片2正面通过导热胶设置有多个第二金属凸块5,所述芯片2周围的基板1正面通过导热胶设置多个第一金属凸块4,所述第一金属凸块4与第二金属凸块5顶部齐平,所述芯片2、第一金属凸块4和第二金属凸块5外围的区域包封有塑封料6,所述塑封料6与第一金属凸块4和第二金属凸块5顶部齐平,所述塑封料6正面电镀有金属层7,所述金属层7与第一金属凸块4和第二金属凸块5顶部相连接,所述基板1背面设置有多个金属球8。
所述第一金属凸块4和第二金属凸块5的横截面形状可以是方形、圆形、六边形、八角形等,金属凸块可以在SMT工序或装片工序进行安装。
其制造方法如下:
步骤一、取一片基板
参见图2,取一片基板,基板上含有印刷电路,基板厚度的选择可依据产品特性进行选择;
步骤二、装片
参见图3,在基板的正面通过底部填充胶倒装上芯片;
步骤三、安装金属凸块
参见图4,在步骤二完成装片的芯片周围的基板正面通过导热胶安装上多个第一金属块,在芯片正面通过导热胶安装上多个第二金属块;
步骤四、塑封
参加图5,在步骤三完成金属凸块安装的基板正面进行环氧树脂塑封保护,环氧树脂材料可以依据产品特性选择有填料或是没有填料的种类;
步骤五、研磨
参见图6,在步骤四完成环氧树脂塑封后进行表面研磨,使第一金属凸块和第二金属凸块顶部露出塑封料表面;
步骤六、电镀金属层
参见图7,在步骤五完成研磨后的塑封料表面电镀上一层金属层;
步骤七、植球
参见图8,在步骤六完成电镀金属层后的基板背面植上多个金属球。
本发明一种芯片倒装BGA封装结构的另一实施如图10所示,它是在电镀金属层工序后通过对边角多余塑封料进行切割,使塑封料侧面露出多个第一金属凸块,从而增加其与空气的接触金属面积,提升与空气对流辐射的散热效率。
Claims (1)
1.一种芯片倒装BGA封装方法,其特征在于所述方法包括以下步骤:
步骤一、取一片基板
取一片厚度合适的含印刷电路的基板;
步骤二、装片
在基板的正面通过底部填充胶倒装上芯片;
步骤三、安装金属凸块
在步骤二完成装片的芯片周围的基板正面安装上多个第一金属块,在芯片正面安装上多个第二金属块;
步骤四、塑封
在步骤三完成金属凸块安装的基板正面进行环氧树脂塑封保护;
步骤五、研磨
在步骤四完成环氧树脂塑封后进行表面研磨,使第一金属凸块和第二金属凸块顶部露出塑封料表面;
步骤六、电镀金属层
在步骤五完成研磨后的塑封料表面电镀上一层金属层;
步骤七、植球
在步骤六完成电镀金属层后的基板背面植上多个金属球。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310380573.7A CN103441085B (zh) | 2013-08-28 | 2013-08-28 | 一种芯片倒装bga封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310380573.7A CN103441085B (zh) | 2013-08-28 | 2013-08-28 | 一种芯片倒装bga封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103441085A true CN103441085A (zh) | 2013-12-11 |
CN103441085B CN103441085B (zh) | 2015-12-23 |
Family
ID=49694773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310380573.7A Active CN103441085B (zh) | 2013-08-28 | 2013-08-28 | 一种芯片倒装bga封装方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103441085B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598048A (zh) * | 2018-03-29 | 2018-09-28 | 番禺得意精密电子工业有限公司 | 散热器组件 |
CN110164833A (zh) * | 2019-06-04 | 2019-08-23 | 广东气派科技有限公司 | 一种芯片散热片的封装方法及芯片封装产品 |
US11469162B2 (en) | 2020-12-07 | 2022-10-11 | Richtek Technology Corporation | Plurality of vertical heat conduction elements attached to metal film |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376678A (zh) * | 2010-08-23 | 2012-03-14 | 矽品精密工业股份有限公司 | 芯片尺寸封装件及其制法 |
CN202839599U (zh) * | 2012-08-23 | 2013-03-27 | 江阴长电先进封装有限公司 | 一种芯片嵌入式三维圆片级封装结构 |
CN103021972A (zh) * | 2011-09-22 | 2013-04-03 | 国碁电子(中山)有限公司 | 芯片封装结构及方法 |
-
2013
- 2013-08-28 CN CN201310380573.7A patent/CN103441085B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102376678A (zh) * | 2010-08-23 | 2012-03-14 | 矽品精密工业股份有限公司 | 芯片尺寸封装件及其制法 |
CN103021972A (zh) * | 2011-09-22 | 2013-04-03 | 国碁电子(中山)有限公司 | 芯片封装结构及方法 |
CN202839599U (zh) * | 2012-08-23 | 2013-03-27 | 江阴长电先进封装有限公司 | 一种芯片嵌入式三维圆片级封装结构 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598048A (zh) * | 2018-03-29 | 2018-09-28 | 番禺得意精密电子工业有限公司 | 散热器组件 |
CN110164833A (zh) * | 2019-06-04 | 2019-08-23 | 广东气派科技有限公司 | 一种芯片散热片的封装方法及芯片封装产品 |
US11469162B2 (en) | 2020-12-07 | 2022-10-11 | Richtek Technology Corporation | Plurality of vertical heat conduction elements attached to metal film |
Also Published As
Publication number | Publication date |
---|---|
CN103441085B (zh) | 2015-12-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6552428B1 (en) | Semiconductor package having an exposed heat spreader | |
US9401316B2 (en) | Electronic devices with improved thermal performance | |
CN108766942A (zh) | 热增强型堆叠封装(PoP) | |
CN102683302A (zh) | 一种用于单芯片封装和系统级封装的散热结构 | |
CN104658987B (zh) | 半导体器件及其制造方法 | |
CN106898591A (zh) | 一种散热的多芯片框架封装结构及其制备方法 | |
CN102763217A (zh) | 半导体裸片封装结构 | |
CN103441085B (zh) | 一种芯片倒装bga封装方法 | |
CN103441106A (zh) | 一种芯片倒装bga封装结构 | |
CN201655787U (zh) | 半导体封装结构 | |
CN103441080A (zh) | 一种芯片正装bga封装方法 | |
CN103441108A (zh) | 一种芯片正装bga封装结构 | |
TWI536515B (zh) | 具有散熱結構之半導體封裝元件及其封裝方法 | |
CN103811359B (zh) | 半导体封装件的制法 | |
CN201364895Y (zh) | 高散热性的半导体封装器件 | |
CN202996814U (zh) | 散热型半导体封装构造 | |
CN202839586U (zh) | 一种采用弹性装置的无外引脚扁平半导体封装结构 | |
CN207503960U (zh) | 一次封装成型的增强散热的封装结构 | |
CN202111082U (zh) | 多圈排列ic芯片封装件 | |
CN212750875U (zh) | 一种半导体散热片装置 | |
CN102832183B (zh) | 一种采用弹性装置的无外引脚扁平半导体封装结构 | |
CN205303451U (zh) | 一种联合封装的功率半导体器件 | |
CN202259261U (zh) | 一种含有热沉的引线框架 | |
CN103824820A (zh) | 引线框区域阵列封装技术 | |
CN111769085A (zh) | 一种半导体散热片装置、封装方法及封装结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |