CN103426798A - 用于在晶粒键合期间加热衬底的装置 - Google Patents

用于在晶粒键合期间加热衬底的装置 Download PDF

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CN103426798A
CN103426798A CN201310185785XA CN201310185785A CN103426798A CN 103426798 A CN103426798 A CN 103426798A CN 201310185785X A CN201310185785X A CN 201310185785XA CN 201310185785 A CN201310185785 A CN 201310185785A CN 103426798 A CN103426798 A CN 103426798A
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温名扬
张志威
苏展东
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ASMPT Singapore Pte Ltd
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Abstract

本发明公开了一种用于在晶粒键合过程中加热衬底的装置,该装置包含有:衬底载体,其被配置来固定衬底;加热设备,其被配置来加热衬底;第一驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于衬底相对于加热设备被相对地步进定位;第二驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于加热设备接触该衬底而将衬底的不同部位加热;尤其是,第二驱动机构被操作来将加热设备从衬底处分离,以便于第一驱动机构将衬底相对地步进定位通过该加热设备。本发明还公开了一种用于在晶粒键合过程中加热衬底的方法。

Description

用于在晶粒键合期间加热衬底的装置
技术领域
本发明涉及一种用于在晶粒键合期间加热衬底的装置。具体地,该装置包含有加热设备,以用于在半导体晶粒被键合至键合盘上以前加热该衬底上的多个键合盘。本发明同样也涉及一种用于在晶粒键合期间加热衬底的方法。
背景技术
共晶键合 (Eutectic Die Bonding)要求在半导体晶粒通过加热后的晶粒焊料层或凸块和衬底键合盘之间的界面被键合至衬底(如引线框)之前,将半导体晶粒的晶粒焊料层或晶粒焊料凸块(Solder Bump)加热至所需的温度。通常,该衬底被放置在加热砧台(heated anvil),以将来自加热砧台的热量通过导热衬底(heat-conducting substrate)传送至衬底上,藉此将晶粒焊料层或凸块加热至所需的温度,以进行共晶键合。
图1所示为用于加热衬底102的传统的步进定位装置(indexing apparatus)100,其包含有相对于晶粒键合机的晶粒夹体104设置的衬底键合盘阵列(图中未示),以沿着键合线106键合。具体地,该步进定位装置100包含有:i)砧台108,其用于支撑衬底102;和ii)工作固定器基座110,其用于支撑砧台108。尤其是,在共晶晶粒键合处理的整个过程中,砧台108被保持在均匀的温度下(例如,如果晶粒焊料层或凸块是由锡金混合物材料制成其为280°C)以加热衬底键合盘。该装置100同样也被配置来沿着图1所示的A方向步进定位衬底102,以便于后续行的衬底键合盘和键合线106对齐定位而从晶粒夹体104处接收半导体晶粒。由于在整个共晶晶粒键合处理过程中整个衬底102被放置在加热砧台108上,所以用于每个衬底键合盘的预键合加热时间和后键合加热时间将会根据其在衬底102上的位置而变化。这意味着比其他衬底键合盘更早接收半导体晶粒的衬底键合盘会具有更短的预键合加热时间和更长的后键合加热时间。但是,这样增大了共晶键合过程中热脆弱的半导体晶粒,例如LED器件,内部损坏的可能性。
因此,本发明的目的在于寻求提供一种用于步进定位衬底的装置,其至少减少了晶粒键合过程中损坏半导体晶粒的可能性。
发明内容
从而,本发明第一方面提供一种用于在晶粒键合过程中加热衬底的装置,该装置包含有:衬底载体,其被配置来固定衬底;加热设备,其被配置来加热衬底;第一驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于衬底相对于加热设备被相对地步进定位;第二驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于加热设备接触该衬底而将衬底的不同部位加热;其中,第二驱动机构被操作来将加热设备从衬底处分离,以便于第一驱动机构将衬底相对地步进定位通过该加热设备。
本装置的一些优选但可选的特征被定义在从属权利要求中。
本发明第二方面提供一种用于在晶粒键合过程中加热衬底的方法,该方法包含有以下步骤:抵靠于衬底接触加热设备,以将衬底的至少一部分加热;将加热设备从衬底处分离;以及在加热设备已经从衬底处分离之后,将衬底相对地步进定位通过加热设备。
本方法的一些优选但可选的步骤也被定义在从属权利要求中。
附图说明
现在通过仅仅以示例的方式结合附图,描述本发明较佳实施例,其中。
图1所示为用于晶粒键合过程中加热衬底的传统步进定位装置的示意图。
图2所示为根据本发明实施例所述的、用于晶粒键合过程中加热衬底的装置的示意图。
图3所示为图2的装置在没有表明顶盖的情形下的俯视示意图,而图3b和图3c所示为图2的装置在表明顶盖的情形下的不同侧视示意图。
图4所示为图2的装置的简化形式。
图5(a)和图5(b)所示分别为图4的装置的俯视和侧视示意图;以及。
图6(a)-图6(d)所示为图4的装置的操作示意图。
具体实施方式
图2所示为用于晶粒键合过程中沿着步进定位方向B步进定位衬底的衬底步进定位器(substrate-indexer)200的示意图。具体地,衬底步进定位器200包含有:i)衬底载体202,其被配置来固定衬底;ii)加热设备(所示为加热砧块(heating anvil block)206),其被配置来加热衬底;iii)冷却设备(所示为冷却砧块(cooling anvil block)208),其相邻于加热砧块206设置,用于冷却衬底204;以及iv)定位设备,其以第一和第二驱动机构的形式存在,被配置来沿着方向B步进定位衬底载体202通过多个步进定位位置,首先通过加热砧块206,接着通过冷却砧块208。具体地,在衬底载体202被步进定位至新位置以前,定位设备被操作来将衬底载体202从加热砧块206和冷却砧块208处分开。定位设备也被操作来在多个步进定位位置抵靠衬底204压挤加热砧块206和/或冷却砧块208,以便于在晶粒键合过程中实现衬底204的不同部位的加热和/或冷却的期望效果。
为了将衬底载体202步进定位通过步进定位位置,第一驱动机构包括:i)水平线性引导体210,用于引导衬底载体202;ii)步进定位机构212,其和水平线性引导体210、衬底载体202相藕接,以沿着步进定位方向B在水平面上步进定位载体204;iii)线性马达214,其被操作来沿着水平线性引导体210驱动定位机构212,以及接着衬底载体202。
为了将衬底载体202从加热砧块206和冷却砧块208处分开,第二驱动机构包括:i)移动砧平台216,其与加热砧块206和冷却砧块208相藕接;ii)马达217,用于在垂直方向上于顶部位置和底部位置之间驱动砧平台216,以在顶部位置抵靠衬底204的不同部位压挤加热砧块206和/或冷却砧块208,以及在底部位置从衬底204处分开加热砧块206和/或冷却砧块208。
而且,衬底载体202和保护气体供应源(图中未示)相连,衬底载体202包含有载体开口以在晶粒键合期间将保护气体(例如惰性气体或合成气体)引入在衬底204上。由于引入了保护气体,衬底204可以得以避免氧化,以及更强的键合可以形成在半导体晶粒和各个衬底键合盘之间。为了保存大量的封闭衬底204的保护气体,衬底步进定位器200另外包含有顶盖222,以将保护气体保存在顶盖222和衬底载体202之间的空间内部。
图3a所示为衬底步进定位器200在没有表明顶盖222的情形下的俯视示意图。可以看出,衬底载体202的表面平行于步进定位方向B的相对侧面的每一个包含有多个载体开口220,以在晶粒键合期间将保护气体引入在衬底204上。具体地,该衬底载体202的表面是用于固定衬底204的表面。
而图3b和图3c所示为衬底步进定位器200在表明顶盖222的情形下的不同侧视示意图。可以看出,顶盖222将保护气体301保存在顶盖222和衬底载体202之间的空间224的内部。这样保存了大量的封闭衬底204顶面的保护气体301,并限制了周围环境气体进入空间224中。有益地,衬底204和半导体晶粒被键合在那里时的氧化能够得以最小化。
另外,从图3b可以看出,衬底载体202包含有夹具218以夹持衬底204。通过在砧平台216被驱动来抵靠衬底204的不同部位压挤加热砧块206和/或冷却砧块208时将衬底204锁固定位,衬底204的不同部位的加热和/或冷却的期望效果能够更为有效地实现。
可以选择的,顶盖222可以包括槽体,当固定有衬底204的衬底载体202被步进定位机构212驱动通过多个步进定位位置时,该槽体和连续行的衬底键合盘对齐定位。由于在顶盖222中提供有槽体,所以晶粒键合机的晶粒夹体可以移动通过顶盖,以到达相应行的衬底键合盘而在此进行键合。因此,顶盖222的槽体和晶粒键合机的键合线对齐定位。
图4所示为衬底步进定位器200的简化形式,其包含有:i)加热砧块206,用于加热衬底204;ii)冷却砧块208,用于冷却衬底204;以及iii)衬底载体202,用于将衬底204在步进定位方向B首先步进定位通过加热砧块206,然后接着通过冷却砧块208。
图5(a)和图5(b)所示分别为图4的衬底步进定位器200的俯视和侧视示意图。为了使得加热砧块206和冷却砧块208之间的不必要的热传递得以最小化,在它们之间提供有绝缘介质500。合适的绝缘介质500的范例包括硅石(silica)、陶瓷纤维(ceramic fiber)和空气。
另外,从图5(a)和图5(b)可以看出,衬底步进定位器200被如此配置,以便于键合线300设置在加热砧块206的上方,并很接近于冷却砧块208。值得注意的是,在整个晶粒键合过程中,键合线300是固定的,并且不会改变。这样有益地简化了晶粒键合机的构造和操作。
图6(a)-图6(d)所示为衬底步进定位器200的操作示意图。
图6(a)表明了加热砧块206和冷却砧块208被驱动至顶部位置,以压靠衬底204的各个基体部位。
在衬底载体202和加热砧块206、冷却砧块208之间的这个相对位置,键合线300和特定行的衬底键合盘阵列对齐定位。在衬底204由步进定位机构212步进横跨加热砧块206而通过多个步进定位位置的过程中,属于这个特定行的衬底键合盘阵列的衬底键合盘可能已经遭受一段期望持续时间的通过加热砧块206的预键合加热。所以,在键合时刻,这些衬底键合盘中的每一个的温度可能已经提升至期望温度T1(例如如果晶粒焊料层或凸块是由锡金混合物制成那么其是280°C)。
关于图6a中设置在键合线300的右侧的成行的衬底键合盘,它们是否已经被加热砧块206充分地加热取决于它们各自离键合线300的距离。尽管设置在键合线300的右侧的一行或多行连续的衬底键合盘可能已达到所需温度T1进行晶粒键合,但是在图6a中距离衬底204极右侧的一行或多行连续的衬底键合盘可能需要通过加热砧块206进行更多的加热,以达到所需温度T1进行晶粒键合。
同样地,关于图6a中设置在键合线300的左侧的成行的衬底键合盘在晶粒键合之后是否已经被冷却砧块208充分地冷却取决于它们各自离键合线300的距离。尽管进一步远离加热砧块206的一行或多行连续的衬底键合盘可能通过冷却砧块208已充分冷却到后键合冷却温度T2,T2<T1(例如200°C以下),但是更靠近加热砧块206的一行或多行连续的衬底键合盘可能需要通过冷却砧块208进行更多的冷却,以达到所需的后键合冷却温度T2。
图6b表明了半导体晶粒沿着那个特定行的衬底键合盘完成键合之后,加热砧块206和冷却砧块208被驱动至底部位置以与衬底载体202分离,并从而与衬底204分离。因此,这样结束了衬底204和加热砧块206、冷却砧块208之间的接触。
接着,衬底载体202通过步进定位机构212沿着步进定位方向B步进一段键合盘间距d,如图6c所示。所以,由衬底载体202所固定的衬底204相应地步进通过一段键合盘间距d的距离。值得欣赏的是,一段键合盘间距d的这段距离与衬底204的相邻行的衬底键合盘之间的间距是匹配的。
在衬底载体202已经被步进定位一段键合盘间距d之后,加热砧块206和冷却砧块208被驱动回复至顶部位置,以压靠衬底204的各个的基体部位,如图6d所示。这将键合线300和另一行衬底键合盘对齐定位以进行晶粒键合。
值得注意的是,关于图6a-图6d所述的衬底步进定位器200的操作周期被连续地得以进行,其在加热砧块206的右侧处的衬底载体202的初始位置以加热第一行衬底键合盘开始,并在冷却砧块208的左侧处的衬底载体202的最终位置以冷却最后一行衬底键合盘结束。
在晶粒键合过程中通过使用衬底步进定位器200以步进定位衬底204,每个衬底键合盘的预键合加热时间被保持均匀一致,以加热至期望的温度T1(例如,如果晶粒焊料层或凸块是由锡金混合物制成其为280°C)而进行晶粒键合。类似地,每个衬底键合盘的后键合冷却时间也被保持均匀一致,以在半导体晶粒已被键合至衬底键合盘之后将衬底键合盘冷却至小于T1的温度T2(例如, 200°C以下)。因此,衬底步进定位器200为每个衬底键合盘提供了和时间相关的温度曲线控制。这有益地减少了损坏半导体晶粒的内部机械结构的可能性,而根据传统的步进定位装置100的情形,其中在整个晶粒键合过程中整个衬底102被放置在加热砧台上。另外,由于在将衬底载体202步进至新位置以前将加热砧块206和冷却砧块208从衬底载体202处分离,所以衬底步进定位器200也使得衬底204避免了被加热砧块206和冷却砧块208所刮擦,尤其如果衬底204是由陶瓷材料制成的时候。再者,和使用步进定位销(indexing pins)相比,衬底载体202有益地提供了一种将衬底204步进通过加热砧块206和冷却砧块208的便利装置。这是因为使用步进定位销通常是特定的封装件,关于不同的设计参数如步进定位销的间距、位置和冲程(stroke)而言,它们的结构构造通常是复杂的。
衬底步进定位器200具体地但非排他地适用于步进定位衬底204以进行共晶晶粒键合。在不离开所要求保护的本发明的宗旨的情形下,能够设想出各种衬底步进定位器200的实施例。例如,衬底步进定位器200可以包含有多个位于不同加热温度下的加热砧块206以加热衬底204,和/或 多个位于不同冷却温度下的冷却砧块208以冷却衬底204。另外,冷却流体(如冷却气体或冷却水)可以用来取代冷却砧块208以冷却衬底204。而且,在晶粒键合过程中,衬底步进定位器200的定位设备可以取代地被配置来在和步进方向B相反的方向上步进定位加热砧块206和冷却砧块208,以及在顶部位置和底部位置之间垂直地移动衬底载体202。但是,在这个实例中,当晶粒被键合至后续行的衬底键合盘上时,键合线300的位置不是固定的,而是必须连同加热砧块206和冷却砧块208一起移动。

Claims (14)

1.一种用于在晶粒键合过程中加热衬底的装置,该装置包含有:
衬底载体,其被配置来固定衬底;
加热设备,其被配置来加热衬底;
第一驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于衬底相对于加热设备被相对地步进定位;
第二驱动机构,其用于引起衬底载体和加热设备之间的相对移动,以致于加热设备接触该衬底而将衬底的不同部位加热;
其中,第二驱动机构被操作来将加热设备从衬底处分离,以便于第一驱动机构将衬底相对地步进定位通过该加热设备。
2.如权利要求1所述的装置,其中,该第二驱动机构藕接于加热设备,并被配置来背离和朝向该衬底移动。
3.如权利要求2所述的装置,其中,该第一驱动机构藕接于衬底载体,并被配置来在加热设备由第二驱动机构移动离开衬底之后,移动衬底载体通过加热设备的局部。
4.如权利要求1所述的装置,其中,该衬底载体包含有多个夹具,其用于将衬底夹持在衬底载体上。
5.如权利要求1所述的装置,其中,该衬底载体连接于保护气体供应源,该衬底载体还进一步包含有多个开口,以用于将保护气体引入至衬底的上方。
6.如权利要求5所述的装置,其中,该多个开口沿着衬底载体的表面的至少一侧设置,该衬底载体的表面被用于固定衬底。
7.如权利要求5所述的装置,该装置还包含有:
封盖,其设置在衬底载体的上方,以用于将保护气体保存于衬底的上方。
8.如权利要求1所述的装置,该装置还包含有:
冷却设备,其相邻于加热设备设置,该冷却设备用于在衬底的各个不同部位已经被加热设备加热之后冷却衬底的不同部位。
9.如权利要求8所述的装置,其中,该冷却设备为冷却砧块。
10.一种用于在晶粒键合过程中加热衬底的方法,该方法包含有以下步骤:
抵靠于衬底接触加热设备,以将衬底的至少一部分加热;
将加热设备从衬底处分离;以及
在加热设备已经从衬底处分离之后,将衬底相对地步进定位通过加热设备。
11.如权利要求10所述的方法,其中,该将加热设备从衬底处分离的步骤还包括:移动加热设备离开衬底。
12.如权利要求11所述的方法,其中,该将衬底相对地步进定位通过加热设备的步骤还包括:在加热设备移动离开衬底之后,移动衬底通过加热设备的一部分。
13.如权利要求10所述的方法,其中,该抵靠于衬底接触加热设备的步骤还包括:朝向衬底移动加热设备。
14.如权利要求10所述的方法,该方法还进一步包含有以下步骤:在衬底的一部分已经被加热设备加热之后,冷却衬底的该部分。
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