CN103367301B - 集成电路器件中的细长凸块 - Google Patents

集成电路器件中的细长凸块 Download PDF

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CN103367301B
CN103367301B CN201310076688.7A CN201310076688A CN103367301B CN 103367301 B CN103367301 B CN 103367301B CN 201310076688 A CN201310076688 A CN 201310076688A CN 103367301 B CN103367301 B CN 103367301B
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opening
layer
metal pad
length
metal
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CN103367301A (zh
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林彦良
陈承先
郭庭豪
吴胜郁
林宗澍
黄昶嘉
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明公开了集成电路器件中的细长凸块，其中一种器件包括衬底、位于衬底上方的金属焊盘、覆盖金属焊盘边缘部分的钝化层。钝化层具有与金属焊盘重叠的第一开口，第一开口具有在与衬底的主面平行的方向上测量的第一横向尺寸。聚合物层位于钝化层上方并覆盖金属焊盘的边缘部分。聚合物层具有与金属焊盘重叠的第二开口。第二开口具有在该方向上测量的第二横向尺寸。第一横向尺寸比第二横向尺寸大约7μm以上。凸块下金属化层(UBM)包括位于第二开口中的第一部分和覆盖部分聚合物层的第二部分。

Description

集成电路器件中的细长凸块
本申请要求2012年3月29日提交的标题为“Elongated Bumps inIntegrated Circuit Devices”的美国临时专利申请序列号61/617,480的优先权，其内容结合于此作为参考。
技术领域
本发明总来说涉及半导体领域，更具体地，涉及集成电路器件中的细长凸块。
背景技术
集成电路由数百万个诸如晶体管和电容器的有源器件构成。这些器件最初彼此隔离，但稍后被互连来形成功能电路。典型的互连结构包括诸如金属线(配线)的横向互连和诸如通孔和接触件的纵向互连。
在互连结构的顶部上形成连接结构，并且连接结构包括在相应芯片的表面上形成并露出的接合焊盘或金属凸块。通过接合焊盘/金属凸块进行电连接以将芯片连接至封装衬底或另一个管芯。可通过引线接合或倒装芯片接合来进行电连接。
一种类型的连接结构包括铝焊盘，其电连接至相应下方的互连结构。形成钝化层和聚合物层，其中部分钝化层和部分聚合物层覆盖铝焊盘的边缘部分。形成凸块下金属化层(UBM)以延伸到钝化层和聚合物层的开口中。铜柱和焊料盖可形成在UBM上。
发明内容
根据本发明的一个方面，提供了一种器件，包括：衬底；金属焊盘，于衬底上方；钝化层，覆盖金属焊盘的边缘部分，钝化层包括与金属焊盘重叠的第一开口，并且第一开口具有在与衬底的主面平行的方向上测量的第一横向尺寸；聚合物层，位于钝化层上方并覆盖金属焊盘的边缘部分，聚合物层包括与金属焊盘重叠的第二开口，第二开口具有在该方向上测量的第二横向尺寸，并且第一横向尺寸比第二横向尺寸大7μm以上；以及凸块下金属化层(UBM)，包括位于第二开口中的第一部分和覆盖部分聚合物层的第二部分。
优选地，UBM具有在该方向上测量的第三横向尺寸，第一横向尺寸比第三横向尺寸小约2μm以上。
优选地，该器件进一步包括位于UBM上方的金属柱。
优选地，器件管芯包括金属焊盘、钝化层、聚合物层和UBM，并且金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
优选地，UBM具有细长的俯视形状并包括一长度和小于该长度的宽度，并且该方向与UBM的纵向平行。
优选地，UBM具有细长的俯视形状并包括一长度和小于该长度的宽度，并且该方向与UBM的横向平行。
优选地，第一开口、第二开口和UBM具有细长的俯视形状。
根据本发明的另一方面，提供了一种器件，包括：衬底；金属焊盘，位于衬底上方；钝化层，覆盖金属焊盘的边缘部分，钝化层包括与金属焊盘重叠的第一开口，并且第一开口具有在与衬底的主面平行的方向上测量的第一横向尺寸；聚合物层，位于钝化层上方并覆盖金属焊盘的边缘部分，聚合物层包括与金属焊盘重叠的第二开口；以及凸块下金属化层(UBM)，包括位于第二开口中的第一部分和覆盖部分聚合物层的第二部分，UBM具有在该方向上测量的第二横向尺寸，并且第一横向尺寸比第二横向尺寸小约2μm以上。
优选地，第二开口具有在该方向上测量的第三横向尺寸，第一横向尺寸比第三横向尺寸大约7μm以上。
优选地，该器件进一步包括位于UBM上方的金属柱，金属柱的边缘与UBM的对应边缘对齐。
优选地，器件管芯包括金属焊盘、钝化层、聚合物层和UBM，并且金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
优选地，UBM具有细长的俯视形状并包括一长度和小于该长度的宽度，并且该方向与UBM的纵向平行。
优选地，UBM具有细长的俯视形状并包括一长度和小于该长度的宽度，并且该方向与UBM的横向平行。
优选地，第一开口、第二开口和UBM具有细长的俯视形状。
根据本发明的另一方面，提供了一种器件，包括：衬底；金属焊盘，位于衬底上方；钝化层，覆盖金属焊盘的边缘部分，钝化层包括第一开口，金属焊盘的一部分设置在第一开口的下方，并且第一开口具有在第一方向和第二方向上测量的第一长度和第一宽度，第一方向和第二方向平行于衬底的主面；聚合物层，位于钝化层上方并覆盖钝化层，聚合物层具有第二开口，部分金属焊盘设置在第二开口下方，第二开口具有分别在第一方向和第二方向上测量的第二长度和第二宽度，并且第一长度比第二长度大约7μm以上且第一宽度比第二宽度大约7μm以上；以及凸块下金属化层(UBM)，包括位于第二开口中的第一部分和位于部分聚合物层上方的第二部分，UBM具有分别在第一方向和第二方向上测量的第三长度和第三宽度，并且第一长度比第三长度小约2μm以上且第一宽度比第三宽度小约2μm以上。
优选地，第一长度、第二长度和第三长度分别大于第一宽度、第二宽度和第三宽度。
优选地，该器件进一步包括位于金属焊盘下方的低k介电层。
优选地，UBM包括铜。
优选地，该器件进一步包括位于UBM上方的金属柱，金属柱的边缘与UBM的对应边缘对齐。
优选地，器件管芯包括金属焊盘、钝化层、聚合物层和UBM，并且金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
附图说明
为了更完整地理解本发明的实施例以及它们的优点，现在结合附图作为参考进行以下描述，其中：
图1示出了根据一些示例性实施例的封装部件的截面图；
图2示出了包括两个封装部件之间的铜柱导线直连(bump-on-trace)接合的封装件；以及
图3示出了图1中的各个部件的俯视图。
具体实施方式
以下详细讨论本发明实施例的制作和使用。然而，应该理解，本实施例提出了许多可以在各种具体环境中具体化的可应用发明概念。所讨论的具体实施例是说明性的，而不限制本发明的范围。
图1示出了根据示例性实施例的封装部件20的截面图。在一些实施例中，封装部件20是器件管芯。根据这些实施例，半导体衬底30可以是体硅衬底或绝缘体上硅衬底。可选地，半导体衬底30还可以包括含有III族、IV族和V族元素的其他半导体材料。集成电路32形成在半导体衬底30的表面30A。集成电路32可包括互补金属氧化物半导体(CMOS)器件。在可选实施例中，封装部件20是中介管芯、封装衬底、封装件等。在封装部件20是中介管芯的实施例中，封装部件20中不包括诸如晶体管的有源器件。在这些实施例中，封装部件20可包括诸如电阻器和电容器的无源器件，或者不包括无源器件。
封装部件20可进一步包括位于半导体衬底30上方的层间介电层(ILD)33和位于ILD33上方的金属层34。金属层34包括形成在介电层38中的金属线35和通孔36。在一些实施例中，介电层38由低k介电材料形成。低k介电材料的介电常数(k值)例如可小于约2.8或小于约2.5。金属线35和通孔36可由铜、铜合金或其他金属形成。
金属焊盘40形成在金属层34上方，并且可通过金属层34中的金属线35和通孔36与电路32电耦合。金属焊盘40可以是铝焊盘或铝-铜焊盘。金属焊盘40的横向尺寸标记为DAP。横向尺寸DAP可以是在与衬底30的主面(诸如顶面30A)平行的方向上测量的长度或宽度。
钝化层42被形成为覆盖金属焊盘40的边缘部分。金属焊盘40的中心部分通过钝化层42中的开142露出并位于开142下方。开142具有横向尺寸Dpass2，其可以是在与衬底30主面30A平行的方向上测量的长度或宽度。钝化层42可以是单层或复合层，并且可以由非多孔材料形成。在一些实施例中，钝化层42是包括氧化硅层(未示出)和位于氧化硅层上方的氮化硅层(未示出)的复合层。在可选实施例中，钝化层42包括非掺杂硅酸盐玻璃(USG)、氮氧化硅等。尽管示出了一个钝化层42，但可以有多个钝化层。例如，在金属焊盘40下方，可以有钝化层39。在实施例中，钝化层39和钝化层42在整个说明书中还被称为钝化层-1(或钝化层1)39和钝化层-2(或钝化层2)42。
聚合物层46形成在钝化层42的上方并覆盖钝化层42。聚合物层46可包括诸如环氧树脂、聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)等的聚合物。聚合物层46被图案化以形成开口146，通过该开口露出金属焊盘40。开口146具有横向尺寸DPIO，在与衬底30主面30A平行的方向上测量该横向尺寸。
凸块下金属化层(UBM)48形成在金属焊盘40上方。UBM48包括位于聚合物层46上方的第一部分和延伸到开口146中以接触金属焊盘40的第二部分。UBM48的横向尺寸被标记为DUBM，在与衬底30主面30A平行的方向上测量该横向尺寸。在一些实施例中，UBM48包括钛层和由铜或铜合金形成的种子层。
金属柱50形成在UBM48上方并与UBM48共终端。例如，金属柱50的每一个边缘均与UBM48的对应边缘对齐。因此，金属柱50的横向尺寸也等于UBM48的相应横向尺寸。UBM48可与金属焊盘40和金属柱50物理接触。在一些示例性实施例中，金属柱50由在回流工艺中不会熔化的非回流金属形成。例如，金属柱50可由铜或铜合金形成。金属柱50的顶面50A高于聚合物层46的顶面46A。
除金属柱50之外，还可以有诸如金属层52的其他金属层形成在金属柱50上，其中金属层52可包括镍层、钯层、金层或它们的多层。焊料盖54还可形成在金属层52上，其中焊料盖54可由Sn-Ag合金、An-Cu合金或Sn-Ag-Cu合金等形成，并且可以是无铅或含铅的。
根据一些实施例，为了最小化低k介电层38中的应力和施加在钝化层242和聚合物层46上的应力，UBM48的横向尺寸DUBM、钝化层242中开口142的横向尺寸Dpass2以及聚合物层46中开口146的横向尺寸DPIO可具有以下关系式：
(DPIO+7μm)＜Dpass2＜(DUBM-2μm) [方程式1]
当满足这种关系时，低k介电层38、钝化层242以及聚合物层46中的应力足够小，使得封装部件20可通过可靠性测试。
图2示出了通过铜柱导线直连(BOT)接合方式将金属柱50接合至封装部件60的金属线62。在一些实施例中，封装部件60是封装衬底，其可以是层压衬底。封装部件60包括多个层压介电层以及嵌入层压介电层的金属线和通孔(未示出)。在可选实施例中，封装部件60是器件管芯、封装件、中介管芯等。在BOT接合方式中，焊料区54接合至金属线62的表面62A和侧面62B。
图3示出了金属焊盘40、UBM48、钝化层2开口142以及聚合物开口146的示例性俯视图。还示意性示出了封装部件60(图2)的金属线62。在一些实施例中，金属焊盘40、UBM48、钝化层2开口142以及聚合物开口146具有细长的俯视图形状，并且具有在相应的纵向方向上测量的长度和在相应的横向方向上测量的宽度。金属线62的纵向方向与金属焊盘40、UBM48、钝化层2开口142以及聚合物开口146的纵向方向平行。方程式1中的UBM48、钝化层2开口142以及聚合物开口146的横向尺寸DUBM、Dpass2以及DPIO可以分别是长度LUBM、Lpass2以及LPIO。因此，方程式1可改写为：
(LPIO+7μm)＜Lpass2＜(LUBM-2μm) [方程式2]
此外，UBM48、钝化层2开口142以及聚合物开口146的横向尺寸DUBM、Dpass2以及DPIO也可以分别是宽度WUBM、Wpass2以及WPIO。因此，方程式1可改写为：
(WPIO+7μm)＜Wpass2＜(WUBM-2μm) [方程式3]
根据一些实施例，当形成如图1和图3所示的封装部件20时，可以满足方程式2或方程式3。此外，可以同时满足方程式2和方程式3。
方程式2和3不包括金属焊盘40的长度LAP和宽度WAP之间的关系。实验结果表明金属焊盘40的形状和尺寸对于减小图1所示结构中的应力没有明显的影响。因此，可灵活选择金属焊盘40的尺寸和形状而不牺牲封装部件20的可靠性。
对具有不同尺寸LAP/WAP、LUBM/WUBM、Lpass2/Wpass2以及LPIO/WPIO的不同抽样管芯20(图1)执行仿真。表1列出了部分仿真结果。
表1
抽样管芯 1 2 3 4 5 6 7 8
LAP/WAP 79 56/101 79 79 79 56/101 79 79
Lpass2/Wpass2 69 69 69/74 50/74 48/74 44/74 42/74 37/74
LPIO/WPIO 30/40 30/40 30/40 30/40 30/40 30/40 30/40 30/40
LUBM/WUBM 50/95 50/95 50/95 50/95 50/95 50/95 50/95 50/95
标准化应力 1.19 1.19 1.20 1.1 1.03 1.00 0.98 0.97
在表1中，对具有图1所示结构的八个抽样管芯进行仿真，以揭示对应低k介电层38中的相应应力。表中最后一行所示的最终应力是相对值，相对于抽样管芯6中低k介电层38的应力对它们进行标准化。除了被仿真之外，抽样管芯6还形成在物理硅衬底上。结果表明抽样管芯6的结构可具有足够裕度地通过可靠性测试。考虑到一些裕度，分别具有标准化应力1.1、1.03、1.00、0.98和0.97的样品4、5、6、7和8是通过仿真的可接受样品，而分别具有标准化应力1.19、1.19和1.20的样品1、2和3是失败样品。此外，抽样管芯1也形成在物理硅衬底上，并且结果表明由于对应低k介电层38中的低k分层而失败。
表1的第二、第三、第四、第五行是横向尺寸(长度和宽度，请参见图3)。表1中的第二到第五行中的每个单元格都包括一个值或者以“/”标记分隔的两个值。“/”标记前的值是长度(单位为μm)，而“/”标记后的值是宽度(单位为μm)。如果单元格具有一个值，则该值既表示长度又表示宽度，长度和宽度彼此相等。比较抽样管芯1和2的LAP/WAP值，发现将金属焊盘40(图1)的形状从直径为79μm的圆形改变为LAP/WAP为56/101的细长形状并没有导致应力减小，其中抽样管芯1和2的应力都是1.19。这表明金属焊盘40的尺寸和形状对应力没有影响。比较抽样管芯2和3的Lpass2/Wpass2值还揭示出钝化层2开口142的形状对应力减小也没有明显的影响。
抽样管芯3的Lpass2和LUBM值分别是69μm和50μm。抽样管芯4的Lpass2和LUBM值分别是50μm和50μm。发现减小Lpass2和LUBM值之间的差值使应力从抽样管芯3的1.20减小到抽样管芯4的1.1。如抽样管芯5至8所示，当满足关系式Lpass2≤(LUBM-2μm)时，相应的应力较低，并且落入可接受范围。此外，比较抽样管芯3至8的Lpass2和LPIO值，发现当满足关系式(LPIO+7μm)＜Lpass2时，可以得到可接受的低应力。
表1揭示出长度LAP/Lpass2/LUBM/LPIO和相应应力之间的关系。宽度WAP/Wpass2/WUBM/WPIO和相应应力也具有相似的关系(请参见方程式3)。例如，表2示出了仿真结果，其中长度LAP/Lpass2/LUBM/LPIO保持不变，而抽样管芯的宽度WAP/Wpass2/WUBM/WPIO发生变化。应力也随着宽度WAP/Wpass2/WUBM/WPIO的变化而变化。
表2
抽样管芯 1 2 3 4 5 6 7
LAP/WAP 79 79 79 79 79 79 79
Lpass2/Wpass2 45/105 45/95 45/93 45/50 45/50 45/47 45/44
LPIO/WPIO 30/40 30/40 30/40 30/40 30/40 30/40 30/40
LUBM/WUBM 50/95 50/95 50/95 50/95 50/95 50/95 50/95
标准化应力 1.22 1.15 1.02 1.00 0.98 0.97 0.96
表2所示的仿真结果表明当满足关系式3时应力值较低。例如，抽样管芯1和2不满足关系式Wpass2＜(WUBM-2μm)，并且抽样管芯1和2的相应应力较高。抽样管芯4至7满足关系式Wpass2＜(WUBM-2μm)，并且抽样管芯4-7的相应应力较低。样品3处于可接受边缘，并且其应力是从高应力到低应力的过渡应力。
在实施例中，通过优化凸块结构的尺寸，可减小低k介电层、钝化层和聚合物层中的应力。这种改进不需要附加的光刻步骤和附加的生产成本。而且，由于对金属焊盘40的形状和大小没有要求，所以金属焊盘40的布线灵活性也不会受到不利影响。
根据实施例，一种器件包括衬底、位于衬底上方的金属焊盘和覆盖金属焊盘的边缘部分的钝化层。钝化层具有与金属焊盘重叠的第一开口，其中第一开口具有在与衬底的主面平行的方向上测量的第一横向尺寸。聚合物层位于钝化层上方并覆盖金属焊盘的边缘部分。聚合物层具有与金属焊盘重叠的第二开口。第二开口具有在该方向上测量的第二横向尺寸。第一横向尺寸比第二横向尺寸大约7μm以上。UBM包括位于第二开口中的第一部分和覆盖部分聚合物层的第二部分。
根据其他实施例，一种器件包括衬底、位于衬底上方的金属焊盘和覆盖金属焊盘的边缘部分的钝化层。钝化层包括与金属焊盘重叠的第一开口。第一开口具有在与衬底的主面平行的方向上测量的第一横向尺寸。聚合物层位于钝化层上方并覆盖金属焊盘的边缘部分。聚合物层包括与金属焊盘重叠的第二开口。UBM包括位于第二开口中的第一部分和覆盖部分聚合物层的第二部分。UBM具有在方向上测量的第二横向尺寸。第一横向尺寸比第二横向尺寸小约2μm以上。
根据又一些其他实施例，一种器件包括衬底、位于衬底上方的金属焊盘和覆盖金属焊盘的边缘部分的钝化层。钝化层具有位于金属焊盘上方的第一开口。第一开口具有在第一方向和第二方向上测量的第一长度和第一宽度，第一方向和第二方向平行于衬底的主面。聚合物层位于钝化层上方并覆盖钝化层，聚合物层具有第二开口，金属焊盘的一部分设置在第二开口下方。第二开口具有分别在第一方向和第二方向上测量的第二长度和第二宽度。第一长度比第二长度大约7μm以上，并且第一宽度比第二宽度大约7μm以上。UBM包括位于第二开口中的第一部分和位于部分聚合物层上方的第二部分。UBM具有分别在第一方向和第二方向上测量的第三长度和第三宽度。第一长度比第三长度小约2μm以上，并且第一宽度比第三宽度小约2μm以上。
尽管详细描述本发明的实施例及它们的优点，但是应该理解，可以进行各种改变、替换和变更而不背离所附权利要求限定的实施例的精神和范围。而且，本申请的范围不旨在限于说明书中描述的工艺、机器装置、制造和物质组成、工具、方法和步骤的具体实施例。根据本发明本领域技术人员很容易理解，根据本发明可使用与本文描述的对应实施例执行基本相同功能或实现基本相同结果的目前现有或即将开发的工艺、机器装置、制造和物质组成、工具、方法或步骤。因此，所附权利要求旨在包括这种工艺、机器装置、制造和物质组成、工具、方法或步骤的范围内。此外，每个权利要求都构成独立的实施例，并且各种权利要求和实施例的组合均在本发明的范围内。

Claims (20)

1.一种半导体器件，包括：
衬底；
金属焊盘，位于所述衬底上方；
钝化层，覆盖所述金属焊盘的边缘部分，所述钝化层包括与所述金属焊盘重叠的第一开口，并且所述第一开口具有在与所述衬底的主面平行的方向上测量的第一横向尺寸；
聚合物层，位于所述钝化层上方并覆盖所述金属焊盘的所述边缘部分，所述聚合物层包括与所述金属焊盘重叠的第二开口，所述第二开口具有在所述方向上测量的第二横向尺寸，并且所述第一横向尺寸比所述第二横向尺寸大7μm以上；以及
凸块下金属化层(UBM)，包括位于所述第二开口中的第一部分和覆盖部分所述聚合物层的第二部分，
其中，所述金属焊盘的尺寸对于减小所述半导体器件中的应力没有影响。
2.根据权利要求1所述的器件，其中，所述凸块下金属化层具有在所述方向上测量的第三横向尺寸，所述第一横向尺寸比所述第三横向尺寸小2μm以上。
3.根据权利要求1所述的器件，进一步包括位于所述凸块下金属化层上方的金属柱。
4.根据权利要求3所述的器件，其中，器件管芯包括所述金属焊盘、所述钝化层、所述聚合物层和所述凸块下金属化层，并且所述金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
5.根据权利要求1所述的器件，其中，所述凸块下金属化层具有细长的俯视形状并包括一长度和小于所述长度的宽度，并且所述方向与所述凸块下金属化层的纵向平行。
6.根据权利要求1所述的器件，其中，所述凸块下金属化层具有细长的俯视形状并包括一长度和小于所述长度的宽度，并且所述方向与所述凸块下金属化层的横向平行。
7.根据权利要求1所述的器件，其中，所述第一开口、所述第二开口和所述凸块下金属化层具有细长的俯视形状。
8.一种半导体器件，包括：
衬底；
金属焊盘，位于所述衬底上方；
钝化层，覆盖所述金属焊盘的边缘部分，所述钝化层包括与所述金属焊盘重叠的第一开口，并且所述第一开口具有在与所述衬底的主面平行的方向上测量的第一横向尺寸；
聚合物层，位于所述钝化层上方并覆盖所述金属焊盘的边缘部分，所述聚合物层包括与所述金属焊盘重叠的第二开口；以及
凸块下金属化层(UBM)，包括位于所述第二开口中的第一部分和覆盖部分所述聚合物层的第二部分，所述凸块下金属化层具有在所述方向上测量的第二横向尺寸，并且所述第一横向尺寸比所述第二横向尺寸小2μm以上，
其中，所述金属焊盘的尺寸对于减小所述半导体器件中的应力没有影响。
9.根据权利要求8所述的器件，其中，所述第二开口具有在所述方向上测量的第三横向尺寸，所述第一横向尺寸比所述第三横向尺寸大7μm以上。
10.根据权利要求8所述的器件，进一步包括位于所述凸块下金属化层上方的金属柱，所述金属柱的边缘与所述凸块下金属化层的对应边缘对齐。
11.根据权利要求10所述的器件，其中，器件管芯包括所述金属焊盘、所述钝化层、所述聚合物层和所述凸块下金属化层，并且所述金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
12.根据权利要求8所述的器件，其中，所述凸块下金属化层具有细长的俯视形状并包括一长度和小于所述长度的宽度，并且所述方向与所述凸块下金属化层的纵向平行。
13.根据权利要求8所述的器件，其中，所述凸块下金属化层具有细长的俯视形状并包括一长度和小于所述长度的宽度，并且所述方向与所述凸块下金属化层的横向平行。
14.根据权利要求8所述的器件，其中，所述第一开口、所述第二开口和所述凸块下金属化层具有细长的俯视形状。
15.一种半导体器件，包括：
衬底；
金属焊盘，位于所述衬底上方；
钝化层，覆盖所述金属焊盘的边缘部分，所述钝化层包括第一开口，所述金属焊盘的一部分设置在所述第一开口的下方，并且所述第一开口具有在第一方向和第二方向上测量的第一长度和第一宽度，所述第一方向和所述第二方向平行于所述衬底的主面；
聚合物层，位于所述钝化层上方并覆盖所述钝化层，所述聚合物层具有第二开口，部分所述金属焊盘设置在所述第二开口下方，所述第二开口具有分别在所述第一方向和所述第二方向上测量的第二长度和第二宽度，并且所述第一长度比所述第二长度大7μm以上且所述第一宽度比所述第二宽度大7μm以上；以及
凸块下金属化层(UBM)，包括位于所述第二开口中的第一部分和位于部分所述聚合物层上方的第二部分，所述凸块下金属化层具有分别在所述第一方向和所述第二方向上测量的第三长度和第三宽度，并且所述第一长度比所述第三长度小2μm以上且所述第一宽度比所述第三宽度小2μm以上，
其中，所述金属焊盘的尺寸对于减小所述半导体器件中的应力没有影响。
16.根据权利要求15所述的器件，其中，所述第一长度、所述第二长度和所述第三长度分别大于所述第一宽度、所述第二宽度和所述第三宽度。
17.根据权利要求15所述的器件，进一步包括位于所述金属焊盘下方的低k介电层。
18.根据权利要求15所述的器件，其中，所述凸块下金属化层包括铜。
19.根据权利要求15所述的器件，进一步包括位于所述凸块下金属化层上方的金属柱，所述金属柱的边缘与所述凸块下金属化层的对应边缘对齐。
20.根据权利要求19所述的器件，其中，器件管芯包括所述金属焊盘、所述钝化层、所述聚合物层和所述凸块下金属化层，并且所述金属柱通过铜柱导线直连接合而接合至封装衬底的金属线。
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