CN103066053B - 集成电路的连接件结构 - Google Patents

集成电路的连接件结构 Download PDF

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Publication number
CN103066053B
CN103066053B CN201210078637.3A CN201210078637A CN103066053B CN 103066053 B CN103066053 B CN 103066053B CN 201210078637 A CN201210078637 A CN 201210078637A CN 103066053 B CN103066053 B CN 103066053B
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metal
metal pad
pad
column
center
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CN103066053A (zh
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杜尚耘
庄曜群
曾明鸿
郭正铮
陈承先
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Abstract

本发明涉及一种集成电路的连接件结构，其中，一种管芯包括衬底、衬底之上的金属焊盘和覆盖金属焊盘的边缘部分的钝化层。金属柱形成在金属焊盘的上方。金属柱的一部分与金属焊盘的一部分重叠。金属柱的中心与金属焊盘的中心没有对准。

Description

集成电路的连接件结构
技术领域
本发明涉及集成电路，更具体地，涉及集成电路的连接件结构。
背景技术
集成电路由数百万个有源器件(诸如晶体管和电容器)组成。这些器件开始彼此隔离，然后进行互连以形成功能电路。典型的互连结构包括诸如金属线(配线)的横向互连以及诸如通孔和触点的垂直互连。互连结构越来越多地决定了现代集成电路的性能和密度的限制。
在互连结构的顶部，形成连接件结构，其可以包括在相应芯片的表面上形成并露出的接合焊盘或金属凸起。通过接合焊盘/金属凸起制造电连接以将芯片连接至封装衬底或另一管芯。可以通过引线接合或倒装接合制造电连接。
一种类型的连接件结构包括电连接至由铜形成的互连结构的铝焊盘。形成钝化层和聚合物层，钝化层和聚合物层的多个部分覆盖铝焊盘的边缘部分。形成凸块底部金属化层(UBM)以延伸进入钝化层和聚合物层中的开口。铜柱和焊料罩盖可以形成在UBM上并进行回流。
发明内容
为解决上述问题，本发明提供了一种器件，包括：管芯，包括：衬底；第一金属焊盘，位于衬底的上方；钝化层，覆盖第一金属焊盘的边缘部分；以及第一金属柱，位于第一金属焊盘的上方，其中，第一金属柱的一部分与第一金属焊盘的一部分重叠，以及其中，第一金属柱的中心不与第一金属焊盘的中心对准。
其中，相对于第一金属焊盘的中心，第一金属柱的中心偏离管芯的中心。
其中，第一金属焊盘和第一金属柱位于管芯的边缘区域中，其中，边缘区域与管芯的边缘相邻，以及其中，第一金属柱的中心在基本上垂直于边缘的方向上偏移。
其中，第一金属焊盘和第一金属柱位于管芯的边角区域中，其中，边角区域与管芯的边角相邻，以及其中，第一金属柱的中心在与管芯的中心和边角之间的线基本上平行的方向上偏移。
该器件进一步包括：第二金属焊盘，位于衬底的上方；以及第二金属柱，位于第二金属焊盘的上方，其中，第二金属柱的一部分与第二金属焊盘的一部分重叠，以及其中，第二金属柱的中心与第二金属焊盘的中心对准。
其中，第二金属焊盘和第二金属柱位于管芯的内部区域中，并且比第一金属焊盘和第一金属柱更加接近管芯的中心。
该器件进一步包括：封装部件，包括接合至第一金属柱的附加金属焊盘，其中，附加金属焊盘的中心不与第一金属柱的中心对准。
该器件进一步包括：封装部件，包括接合至第一金属柱的附加金属焊盘，其中，附加金属焊盘的中心与第一金属柱的中心对准。
其中，第一金属焊盘和第一金属柱中的每一个都具有长轴和短于长轴的短轴。
该器件进一步包括：凸块底部金属化层(UBM)，位于第一金属焊盘和第一金属柱之间并接触第一金属焊盘和第一金属柱。
此外，还提供了一种器件，包括：管芯，包括：衬底；第一金属焊盘，位于衬底的上方；钝化层，覆盖第一金属焊盘的边缘部分；第一金属柱，位于第一金属焊盘的上方并在钝化层的上方延伸，其中，第一金属柱和第一金属焊盘位于管芯的第一边角区域中；第二金属焊盘，位于衬底的上方；第二金属柱，位于第二金属焊盘的上方，其中，第二金属焊盘和第二金属柱位于管芯的第二边角区域中，其中，第一边角区域和第二边角区域位于管芯的中心的相对侧上，以及其中，从上向下观看管芯时，第一金属柱和第二金属柱的中心分别不与第一金属焊盘和第二金属焊盘的中心对准，并且分别相对于第一金属焊盘和第二金属焊盘的中心偏离管芯的中心；以及封装组件，接合至第一金属柱和第二金属柱，其中，封装组件选自主要由器件管芯、插入件、封装衬底、和印刷电路板组成的组。
该器件进一步包括：第三金属焊盘，位于衬底的上方；第三金属柱，位于第三金属焊盘的上方，其中，第三金属焊盘和第三金属柱位于管芯的第一边缘区域中；第四金属焊盘，位于衬底的上方；以及第四金属柱，位于第四金属焊盘的上方，其中，第四金属焊盘和第四金属柱位于管芯的第二边缘区域中，其中，第一边缘区域和第二边缘区域位于管芯的中心的相对侧上，以及其中，从上向下观看管芯时，第三金属柱和第四金属柱的中心分别不与第三金属焊盘和第四金属焊盘的中心对准。
其中，第一金属焊盘的中心和第一金属柱的中心之间的未对准在管芯的尺寸的大约0.01％至大约0.09％之间，其中，管芯的尺寸是在与第一金属柱的偏移方向平行的方向上测得的。
该器件进一步包括：第三金属焊盘，位于衬底的上方；以及第三金属柱，位于第三金属焊盘的上方，其中，第三金属柱的一部分与第三金属焊盘的一部分重叠，其中，第三金属柱的中心与第三金属焊盘的中心对准，以及其中，第三金属焊盘和第三金属柱位于管芯的内部区域中，管芯的中心包括在内部区域中。
该器件进一步包括：凸块底部金属化层(UBM)，位于第一金属焊盘和第一金属柱之间并接触第一金属焊盘和第一金属柱。
此外，还提供了一种器件，包括：管芯，包括第一边角、第二边角、第三边角、和第四边角，其中，管芯进一步包括：衬底；第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘，位于衬底的上方，其中，第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘比管芯中的任何其他金属焊盘更接近第一边角、第二边角、第三边角、和第四边角中的相应边角；钝化层，覆盖第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘的边缘部分；以及第一金属柱、第二金属柱、第三金属柱、和第四金属柱，位于第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘中的相应金属焊盘的上方，并且延伸进入钝化层中的开口，以电连接至第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘，其中，第一金属柱、第二金属焊盘、第三金属焊盘、和第四金属焊盘的中心在分别朝向第一边角、第二边角、第三边角、和第四边角的方向上偏离第一金属焊盘、第二金属焊盘、第三金属焊盘和第四金属焊盘的中心。
该器件进一步包括：第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘，位于衬底的上方，其中，第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘位于与管芯的第一边缘、第二边缘、第三边缘、和第四边缘相邻的一个边缘行中；以及第五金属柱、第六金属柱、第七金属柱、和第八金属柱，位于第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘中的相应金属焊盘的上方，其中，第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘的中心分别朝向第一边缘、第二边缘、第三边缘、和第四边缘偏离第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘的中心。
其中，第一金属焊盘的中心和第一金属柱的中心之间的未对准在管芯的尺寸的大约0.01％至大约0.09％之间，其中，管芯的尺寸是在与第一金属柱的偏移方向平行的方向上测得的。
该器件进一步包括：多个金属焊盘，位于衬底的上方；以及多个金属柱，电连接至多个金属焊盘并与多个金属焊盘重叠，其中，多个金属柱的中心与多个金属焊盘的中心对准，以及其中，多个金属焊盘和多个金属柱位于管芯的内部区域中，管芯的中心包括在内部区域中。
该器件进一步包括：凸块底部金属化层(UBM)，位于第一金属焊盘和第一金属柱之间并接触第一金属焊盘和第一金属柱。
附图说明
为了更完整地理解实施例及其优点，结合附图进行以下描述，其中：
图1示出了管芯的顶视图，其中，在管芯的边角区域、边缘区域、和内部区域中分布连接件结构；
图2示出了图1所示管芯的一部分的截面图；
图3和图4示出了图1中的管芯与另一封装部件的接合；
图5示意性示出了根据实施例的金属柱与相应的连接下部金属焊盘的未对准，其中，金属柱和金属焊盘具有非加长形状；以及
图6示意性示出了根据备选实施例的金属柱与相应的连接下部金属焊盘的未对准，其中，金属柱和金属焊盘具有加长形状。
具体实施方式
以下详细讨论各个实施例的制造和使用。然而，应该理解，本公开提供了许多可以在各种特定环境下具体化的可应用发明概念。所讨论的特定实施例仅仅是制造和使用的具体方式，并不用于限制本公开的范围。
根据实施例提供了半导体管芯中的连接件结构。然后讨论了实施例的变化。在各个附图和所示实施例中，类似的参考标号用于表示类似元件。
图1示出了根据各个实施例的管芯100的顶视图。管芯100可以为器件管芯。管芯100具有边角100A(包括边角100A1至100A4)和边缘100B(包括边缘100B1至100B4)。多个电连接件50可以形成在管芯100的表面处。电连接件50可以连接至下部金属焊盘40。
在图2中示出示例性电连接件50和金属焊盘40的细节，其示出了管芯100的一部分的截面图，其中，从图1中的面剖线2-2获得截面图。管芯100包括半导体衬底30。在一个实施例中，管芯100为器件管芯，其可以包括其中具有诸如晶体管的有源器件(未示出)的集成电路32。半导体衬底30可以为体硅衬底或绝缘体上硅衬底。还可以使用包括III族、IV族、和V族元素的其他半导体材料。在备选实施例中，管芯100可以为其中不包括有源器件的其他封装部件的管芯，并且例如可以为插入式管芯。在管芯100不包括有源器件的实施例中，管芯100可以包括诸如电阻器或电容器的无源器件或者不含无源器件。
管芯100可进一步包括：层间电介质(ILD)34，在半导体衬底30的上方；以及金属层36，在ILD 34的上方。金属层36可包括形成在介电层38中的金属线和通孔(未示出)。在一个实施例中，介电层38由低k电介质材料形成。例如，低k电介质材料的介电常数(k值)可以小于大约2.8，或者小于大约2.5。金属线和通孔可以由铜或铜合金形成，尽管它们还可以由其他金属形成。
金属焊盘40形成在金属层36的上方，并且可以通过金属层36中的金属线和通孔电连接至电路32。金属焊盘40可以为铝焊盘或铝铜焊盘，因此可选地在下文中称为铝焊盘40，尽管其他金属材料也可以用于形成金属焊盘40。钝化层42被形成为覆盖铝焊盘40的边缘部分。通过钝化层42中的开口露出铝焊盘40的中心部分。钝化层42可以为单层或复合层，并且可以由非多孔材料形成。在一个实施例中，钝化层42为包括氧化硅层(未示出)和氧化硅层上方的氮化硅层(未示出)的复合层。钝化层42还可以由非掺杂硅酸盐玻璃(USG)、氮氧化硅等形成。尽管示出了一个钝化层42，但还可以存在多于一个的钝化层。
聚合物层46形成在钝化层42的上方。聚合物层46可包括诸如环氧树脂、聚酰亚胺、苯并环丁烯(BCB)、聚苯并恶唑(PBO)等的聚合物。聚合物层46被图样化以形成开口，通过该开口露出铝焊盘40。可以使用光刻技术执行聚合物层46的图样化。
凸块底部金属化层(UBM)48形成在金属焊盘40的上方。UBM 48包括聚合物层46上方的第一部分和延伸进入聚合物层46的开口中的第二部分。在一个实施例中，UBM 48包括钛层和晶种层，其可以由铜或铜合金形成。金属柱50形成在UBM 48上，并且与UBM 48共末端(co-terminus)。UBM 48的边缘与金属柱50的相应边缘对准。UBM 48可以与金属焊盘40和金属柱40进行物理接触。在示例性实施例中，金属柱50由在回流工艺中不熔化的不可回流金属形成。例如，金属柱50可以由铜或铜合金形成。金属柱50的顶面50B高于聚合物层46的顶面46A。除金属柱50之外，还存在附加金属层，诸如形成在金属柱50上的金属层52，其中，金属层52可以包括镍层、铂层、金层、或它们中的多层。焊料罩盖54还可以形成在金属层52上，其中，焊料罩盖54可以由Sn-Ag合金、Sn-Cu合金、Sn-Ag-Cu合金等形成，并且可以不含铅或包含铅。UBM 48还可以被看作金属柱50的底部。
在一个实施例中，金属焊盘40的横向尺寸W1小于金属柱50的横向尺寸W2。在可选实施例中，金属焊盘40的横向尺寸W1等于或大于金属柱50的横向尺寸W2。
图2所示金属焊盘40与相应的上覆金属柱50没有对准。在图2结构的顶视图中，金属焊盘40具有中心40A(还可以参照图5和图6)，其在图2中被示为线40A。金属柱50在顶视图中还具有中心50A，其在图2中被示为线50A。根据实施例，中心40A和中心50A偏移距离ΔS。在示例性实施例中，偏移ΔS可以小于长度L或宽度W(图1)大约0.2％，或者在大约0.01％和大约0.09％之间，其中，长度L和W为管芯100的长度和宽度。根据对准的方向，在测量长度L或宽度W的相同方向上测量偏移ΔS。
在图2中，绘制箭头45以示出管芯100的中心100C(还可以参照图1)的方向。因此，根据管芯100中金属焊盘40和金属柱50的位置，与方向45相反的方向可以朝向管芯100的边角100A1-100A4或边缘100B1-100B4。如图2所示，在朝向管芯中心100C的方向上，金属柱50和聚合物层46的重叠区域具有宽度W3，以及在远离管芯中心100C的方向上，金属柱50和聚合物层46的重叠区域具有宽度W4，其中，宽度W4大于宽度W3。作为金属柱50和金属焊盘40没有对准的结果，与朝向管芯中心100C的方向上与聚合物层46的重叠相比，金属柱50在远离管芯中心100C的方向上与聚合物层46重叠得更多。这帮助减少介电层42的破裂。
参照图3，管芯100接合至封装部件200，例如，封装部件200可以为封装衬底、印刷电路板(PCB)、或插入件。因此，封装部件200被称为封装衬底200，尽管其还可以为其他类型的封装部件，诸如插入件、器件管芯、PCB等。在一个实施例中，封装衬底200包括金属焊盘210、以及覆盖部分金属焊盘210的介电层212。金属焊盘210可以通过介电层212中的开口露出，并且金属柱50可以通过开口接合至金属焊盘210。在一个实施例中，在接合之后，金属焊盘210的中心210A可以与金属柱50的中心50A对准，并且与金属焊盘40的中心40A未对准。可选地，金属焊盘210可以与金属柱50对准，并且与金属焊盘40未对准。应该理解，封装衬底200可以具有不同于(可能大于)管芯100的第二热膨胀系数(CTE)的第一CTE。因此，金属焊盘210的中心210A会在回流工艺之前需要与金属柱50的中心50A未对准，使得当在回流中加热时，由于第一和第二CTE的差，金属焊盘210的中心210A与金属柱50的中心50A对准。在回流结束冷却之后，金属焊盘210的中心210A可以保持与金属柱50的中心50A对准。因此，在金属焊盘40、金属柱50、金属焊盘210、以及相应的管芯100和封装部件200的设计中，需要考虑材料的膨胀。
图4示出了根据可选实施例的连接件结构。除金属焊盘40的中心40A与金属柱50的中心50A之间的未对准之外，金属焊盘210的中心210A还与金属柱50的中心50A没有对准。在形成相应封装的过程中，金属焊盘210的中心210A可以在回流之前与中心50A对准。在回流之后，由于管芯100和封装衬底200的CTE之间的差，会发生金属焊盘210和金属柱50之间的未对准。
返回参照图1，管芯100包括被外围区域环绕的内部区域64C。外围区域可以划分为边角区域64A(包括64A1至64A4，与管芯100的边角100A相邻)以及边缘区域64B(包括64B1至64B4，与管芯100的边缘100B相邻)。边缘区域64B和边角区域64A的长度L5和宽度W5可以小于管芯100的相应长度L和宽度W的1/4或者小于大约10％。在边角区域64A、边缘区域64B、和内部区域64C的每一个中，也如图2所示，存在多个连接件结构，每一个都包括金属焊盘40和上部金属柱50。
图5示意性示出了金属柱50如何可以与相应的下部金属焊盘40未对准，其中，中心40A和50A的未对准表示相应金属焊盘40和金属柱50的未对准。在边角区域64A、边缘区域64B、和内部区域64C的每一个中，示出一个金属焊盘40和一个金属柱50，以表示相同区域中的多个金属焊盘40和金属柱50。如图5所示，边缘区域64B中的中心50A相对于相应连接金属焊盘40的中心40A朝向相应的边缘100B偏移。例如，边缘区域64B1中的中心50A朝向边缘100B1偏移，而边缘区域64B3中的中心50A朝向边缘100B3偏移。偏移方向(通过虚线箭头102表示)远离管芯100的中心100C。
如通过中心40A和50A的未对准所表示的，边角区域64A中的金属柱50相对于相应连接金属焊盘40朝向相应边角100A偏移。例如，边角区域64A1中的中心50A朝向边角100A1偏移，而边角区域64A3中的金属柱50朝向边角100A3偏移。边角区域64A中的偏移方向(通过虚线102表示)进一步远离中心100C。对于边角区域64A中的金属焊盘50，偏移方向可以与在中心100C和边角100A之间绘制的线平行。对于边角区域64B中的金属焊盘50，偏移方向垂直于相应边缘100B的延伸方向。在每个边角区域64A中，可以存在具有偏移中心40A/50A的连接件结构的一个、两个、三个或多个边角行，而边角区域64中的剩余金属焊盘40和相应金属柱50的中心对准。每个边缘区域64B中，可以存在具有偏移中心40A/50A的连接件结构的一个、两个、三个或多个边缘行，而边角区域64中的剩余金属焊盘40和相应金属柱50的中心对准。可选地，在每个边角区域64A和边缘区域64B中，所有连接件结构都具有与相应金属柱50没有对准的金属焊盘40。在内部区域64C中，金属焊盘40的中心40A与相应的上部金属柱50的中心50A对准。在一些实施例中，内部区域64C中的连接件没有具有未对准的中心40A和50A。
在图5中，金属焊盘40和金属柱50基本上为圆形对称，没有显著较长或较短的轴(当在顶视图中观看时)。在可选实施例中，金属焊盘40和金属柱50可以具有加长形状，其中，长轴远大于短轴。图6示出了示例性管芯100的顶视图。该结构类似于图5所示结构，除了在例如在朝向管芯100的中心100C的方向上延伸金属焊盘40和金属柱50的顶视图形状。该结构可用于形成铜柱导线直连(bump-on-trace)结构。边角区域64A和边缘区域64B中的连接件结构可以仍然包括金属柱50相对于对应的下部金属焊盘40远离管芯100的中心100C偏移的连接件结构。另一方面，在内部区域64C中，金属焊盘40的中心40A和上部金属柱50的中心50A仍然对准。
实施例中，通过相对于相应的连接金属焊盘远离相应管芯的中心偏移金属柱，连接件结构更加坚固，并且减小了具有钝化破裂的可能性。实验结果表明，当发生钝化破裂时，更加可能在远离管芯中心的金属焊盘的侧面上发生。在朝向管芯中心的侧面上，不可能发生钝化破裂。因此，通过在远离管芯中心的方向上偏移金属柱，使得金属柱和聚合物层46(图2)具有更多重叠。因此，减少了钝化破裂。
根据实施例，一种管芯包括衬底、衬底上方的金属焊盘和覆盖金属焊盘的边缘部分的钝化层。金属柱形成在金属焊盘的上方。金属柱的一部分与金属焊盘的一部分重叠。金属柱的中心与金属焊盘的中心没有对准。
根据其他实施例，一种管芯包括：衬底；第一金属焊盘，在衬底的上方；钝化层，覆盖第一金属焊盘的边缘部分；以及第一金属柱，在第一金属焊盘的上方并在钝化层的上方延伸。第一金属柱和第一金属焊盘在管芯的第一边角区域中。管芯还包括：第二金属焊盘，在衬底的上方；以及第二金属柱，在第二金属焊盘的上方。第二金属焊盘和第二金属柱在管芯的第二边角区域中。第一边角区域和第二边角区域在管芯的中心的相对侧上。在管芯的顶视图中，第一金属柱和第二金属柱的中心分别与第一金属焊盘和第二金属焊盘的中心没有对准，并且分别相对于第一金属焊盘和第二金属焊盘的中心从管芯的中心移走第一金属柱和第二金属柱的中心。
根据又一些实施例，一种管芯包括第一、第二、第三和第四边角。管芯还包括：衬底；第一、第二、第三和第四金属焊盘，在衬底的上方，其中，第一、第二、第三和第四金属焊盘比管芯中的任何其他金属焊盘更接近第一、第二、第三和第四边角中的相应一个。管芯还包括钝化层，覆盖第一、第二、第三和第四金属焊盘的边缘部分。第一、第二、第三和第四金属柱设置在第一、第二、第三和第四金属焊盘中的相应一个的上方，并延伸到钝化层中的开口中以电连接至第一、第二、第三和第四金属焊盘。在分别朝向第一、第二、第三和第四边角的方向上从第一、第二、第三和第四金属焊盘的中心移走第一、第二、第三和第四金属焊盘的中心。
尽管详细描述了示例性实施例和它们的特征，但应该理解，在不背离由所附权利要求定义的公开的精神和范围的情况下，可以进行各种改变、替换和变化。此外，本申请的范围不限于说明书中描述的工艺、机器、制造、物质组成、装置、方法和步骤的特定实施例。本领域的技术人员应该容易地从公开中理解，可以根据公开利用现有或稍后开发的执行与本文所描述相应实施例基本相同的功能或实现基本相同的结果的工艺、机器、制造、物质组成、装置、方法和步骤。因此，所附权利要求用于包括在这些工艺、机器、制造、物质组成、装置、方法和步骤的范围内。此外，每个权利要求都构成独立的实施例，并且各种权利要求和实施例的组合都在本公开的范围内。

Claims (18)

1.一种半导体器件，包括：
管芯，包括：
衬底；
第一金属焊盘，位于所述衬底的上方；
钝化层，覆盖所述第一金属焊盘的边缘部分；
聚合物层，位于所述钝化层上方；
第一金属柱，位于所述第一金属焊盘的上方，其中，所述第一金属柱的一部分与所述第一金属焊盘的一部分重叠，以及其中，所述第一金属柱的中心不与所述第一金属焊盘的中心对准；
金属层，形成在所述第一金属柱上并且所述金属层的边缘与所述第一金属柱的边缘对准；
焊料罩盖，形成在所述金属层上；
凸块底部金属化层(UBM)，与所述第一金属柱共末端，并且所述凸块底部金属化层的边缘与所述第一金属柱的相应边缘对准，其中所述凸块底部金属化层包括位于所述聚合物层上方的第一部分、以及延伸至所述聚合物层和所述钝化层中以与所述第一金属焊盘连接的第二部分；以及
封装部件，包括接合至所述焊料罩盖的附加金属焊盘，其中，所述附加金属焊盘的中心不与所述第一金属柱的中心对准。
2.根据权利要求1所述的半导体器件，其中，相对于所述第一金属焊盘的中心，所述第一金属柱的中心偏离所述管芯的中心。
3.根据权利要求2所述的半导体器件，其中，所述第一金属焊盘和所述第一金属柱位于所述管芯的边缘区域中，其中，所述边缘区域与所述管芯的边缘相邻，以及其中，所述第一金属柱的中心在垂直于所述边缘的方向上偏移。
4.根据权利要求2所述的半导体器件，其中，所述第一金属焊盘和所述第一金属柱位于所述管芯的边角区域中，其中，所述边角区域与所述管芯的边角相邻，以及其中，所述第一金属柱的中心在与所述管芯的中心和所述边角之间的线平行的方向上偏移。
5.根据权利要求1所述的半导体器件，进一步包括：
第二金属焊盘，位于所述衬底的上方；以及
第二金属柱，位于所述第二金属焊盘的上方，其中，所述第二金属柱的一部分与所述第二金属焊盘的一部分重叠，以及其中，所述第二金属柱的中心与所述第二金属焊盘的中心对准。
6.根据权利要求5所述的半导体器件，其中，所述第二金属焊盘和所述第二金属柱位于所述管芯的内部区域中，并且比所述第一金属焊盘和所述第一金属柱更加接近所述管芯的中心。
7.根据权利要求1所述的半导体器件，其中，所述第一金属焊盘和所述第一金属柱中的每一个都具有长轴和短于所述长轴的短轴。
8.根据权利要求1所述的半导体器件，其中，所述凸块底部金属化层位于所述第一金属焊盘和所述第一金属柱之间并接触所述第一金属焊盘和所述第一金属柱。
9.一种半导体器件，包括：
管芯，包括：
衬底；
第一金属焊盘，位于所述衬底的上方；
钝化层，覆盖所述第一金属焊盘的边缘部分；
聚合物层，位于所述钝化层上方；
第一金属柱，位于所述第一金属焊盘的上方并在所述钝化层的上方延伸，其中，所述第一金属柱和所述第一金属焊盘位于所述管芯的第一边角区域中；
第二金属焊盘，位于所述衬底的上方；
第二金属柱，位于所述第二金属焊盘的上方，其中，所述第二金属焊盘和所述第二金属柱位于所述管芯的第二边角区域中，其中，所述第一边角区域和所述第二边角区域位于所述管芯的中心的相对侧上，以及其中，从上向下观看所述管芯时，所述第一金属柱和所述第二金属柱的中心分别不与所述第一金属焊盘和所述第二金属焊盘的中心对准，并且分别相对于所述第一金属焊盘和所述第二金属焊盘的中心偏离所述管芯的中心；
金属层，形成在所述第一金属柱和所述第二金属柱上，并且所述金属层的边缘与所述第一金属柱和所述第二金属柱的边缘对准；
焊料罩盖，形成在所述金属层上；
封装组件，接合至所述第一金属柱和所述第二金属柱，其中，所述封装组件选自主要由器件管芯、插入件、封装衬底、和印刷电路板组成的组，其中，所述封装组件包括接合至所述焊料罩盖的附加金属焊盘，其中，所述附加金属焊盘的中心不与所述第一金属柱的中心对准；以及
凸块底部金属化层(UBM)，与所述第一金属柱共末端，并且所述凸块底部金属化层的边缘与所述第一金属柱的相应边缘对准，其中所述凸块底部金属化层包括位于所述聚合物层上方的第一部分、以及延伸至所述聚合物层和所述钝化层中以与所述第一金属焊盘连接的第二部分。
10.根据权利要求9所述的半导体器件，进一步包括：
第三金属焊盘，位于所述衬底的上方；
第三金属柱，位于所述第三金属焊盘的上方，其中，所述第三金属焊盘和所述第三金属柱位于所述管芯的第一边缘区域中；
第四金属焊盘，位于所述衬底的上方；以及
第四金属柱，位于所述第四金属焊盘的上方，其中，所述第四金属焊盘和所述第四金属柱位于所述管芯的第二边缘区域中，其中，所述第一边缘区域和所述第二边缘区域位于所述管芯的中心的相对侧上，以及其中，从上向下观看所述管芯时，所述第三金属柱和所述第四金属柱的中心分别不与所述第三金属焊盘和所述第四金属焊盘的中心对准。
11.根据权利要求9所述的半导体器件，其中，所述第一金属焊盘的中心和所述第一金属柱的中心之间的未对准在所述管芯的尺寸的0.01％至0.09％之间，其中，所述管芯的尺寸是在与所述第一金属柱的偏移方向平行的方向上测得的。
12.根据权利要求9所述的半导体器件，进一步包括：
第三金属焊盘，位于所述衬底的上方；以及
第三金属柱，位于所述第三金属焊盘的上方，其中，所述第三金属柱的一部分与所述第三金属焊盘的一部分重叠，其中，所述第三金属柱的中心与所述第三金属焊盘的中心对准，以及其中，所述第三金属焊盘和所述第三金属柱位于所述管芯的内部区域中，所述管芯的中心包括在所述内部区域中。
13.根据权利要求9所述的半导体器件，其中，所述凸块底部金属化层位于所述第一金属焊盘和所述第一金属柱之间并接触所述第一金属焊盘和所述第一金属柱。
14.一种半导体器件，包括：
管芯，包括第一边角、第二边角、第三边角、和第四边角，其中，所述管芯进一步包括：
衬底；
第一金属焊盘、第二金属焊盘、第三金属焊盘、和第四金属焊盘，位于所述衬底的上方，其中，所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘比所述管芯中的任何其他金属焊盘更接近所述第一边角、所述第二边角、所述第三边角、和所述第四边角中的相应边角；
钝化层，覆盖所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘的边缘部分；
聚合物层，位于所述钝化层上方；
第一金属柱、第二金属柱、第三金属柱、和第四金属柱，位于所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘中的相应金属焊盘的上方，并且延伸进入所述钝化层中的开口，以电连接至所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘，其中，所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘的中心在分别朝向所述第一边角、所述第二边角、所述第三边角、和所述第四边角的方向上偏离所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘和所述第四金属焊盘的中心；
金属层，形成在所述第一金属柱、所述第二金属柱、所述第三金属柱、和所述第四金属柱上并且所述金属层的边缘与所述第一金属柱、所述第二金属柱、所述第三金属柱、和所述第四金属柱的边缘对准；
焊料罩盖，形成在所述金属层上；
凸块底部金属化层(UBM)，与所述第一金属柱共末端，并且所述凸块底部金属化层的边缘与所述第一金属柱的相应边缘对准，其中所述凸块底部金属化层包括位于所述聚合物层上方的第一部分、以及延伸至所述聚合物层和所述钝化层中以与所述第一金属焊盘、所述第二金属焊盘、所述第三金属焊盘、和所述第四金属焊盘连接的第二部分；以及
封装部件，包括接合至所述焊料罩盖的附加金属焊盘，其中，所述附加金属焊盘的中心不与所述第一金属柱的中心对准。
15.根据权利要求14所述的半导体器件，进一步包括：
第五金属焊盘、第六金属焊盘、第七金属焊盘、和第八金属焊盘，位于所述衬底的上方，其中，所述第五金属焊盘、所述第六金属焊盘、所述第七金属焊盘、和所述第八金属焊盘位于与所述管芯的第一边缘、第二边缘、第三边缘、和第四边缘相邻的一个边缘行中；以及
第五金属柱、第六金属柱、第七金属柱、和第八金属柱，位于所述第五金属焊盘、所述第六金属焊盘、所述第七金属焊盘、和所述第八金属焊盘中的相应金属焊盘的上方，其中，所述第五金属焊盘、所述第六金属焊盘、所述第七金属焊盘、和所述第八金属焊盘的中心分别朝向所述第一边缘、所述第二边缘、所述第三边缘、和所述第四边缘偏离所述第五金属焊盘、所述第六金属焊盘、所述第七金属焊盘、和所述第八金属焊盘的中心。
16.根据权利要求14所述的半导体器件，其中，所述第一金属焊盘的中心和所述第一金属柱的中心之间的未对准在所述管芯的尺寸的0.01％至0.09％之间，其中，所述管芯的尺寸是在与所述第一金属柱的偏移方向平行的方向上测得的。
17.根据权利要求14所述的半导体器件，进一步包括：
多个金属焊盘，位于所述衬底的上方；以及
多个金属柱，电连接至所述多个金属焊盘并与所述多个金属焊盘重叠，其中，所述多个金属柱的中心与所述多个金属焊盘的中心对准，以及其中，所述多个金属焊盘和所述多个金属柱位于所述管芯的内部区域中，所述管芯的中心包括在所述内部区域中。
18.根据权利要求14所述的半导体器件，其中，所述凸块底部金属化层位于所述第一金属焊盘和所述第一金属柱之间并接触所述第一金属焊盘和所述第一金属柱。
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CN101271872A (zh) * 2007-03-21 2008-09-24 晶宏半导体股份有限公司 凸块指化的晶片结构

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US9659903B2 (en) 2017-05-23
US9991218B2 (en) 2018-06-05
US20160268227A1 (en) 2016-09-15
US9373598B2 (en) 2016-06-21
US8729699B2 (en) 2014-05-20
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US20140231987A1 (en) 2014-08-21
US9093440B2 (en) 2015-07-28
US20150303160A1 (en) 2015-10-22
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US20130093079A1 (en) 2013-04-18

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