CN103328205A - 无机多层堆叠件及其相关的制造方法以及组成成分 - Google Patents
无机多层堆叠件及其相关的制造方法以及组成成分 Download PDFInfo
- Publication number
- CN103328205A CN103328205A CN2012800064695A CN201280006469A CN103328205A CN 103328205 A CN103328205 A CN 103328205A CN 2012800064695 A CN2012800064695 A CN 2012800064695A CN 201280006469 A CN201280006469 A CN 201280006469A CN 103328205 A CN103328205 A CN 103328205A
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- inorganic
- molecule
- level stack
- inorganic barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 26
- 239000000203 mixture Substances 0.000 title claims description 10
- 230000004888 barrier function Effects 0.000 claims abstract description 153
- 239000010410 layer Substances 0.000 claims description 249
- 239000007789 gas Substances 0.000 claims description 102
- 238000006243 chemical reaction Methods 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 52
- 238000007130 inorganic reaction Methods 0.000 claims description 46
- 238000000576 coating method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 11
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000008020 evaporation Effects 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 239000000470 constituent Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000008595 infiltration Effects 0.000 claims description 5
- 238000001764 infiltration Methods 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 239000004408 titanium dioxide Substances 0.000 claims description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005546 reactive sputtering Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000002178 crystalline material Substances 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- 239000005864 Sulphur Substances 0.000 claims description 2
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical compound [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 238000013086 organic photovoltaic Methods 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 229920003023 plastic Polymers 0.000 description 9
- 239000002585 base Substances 0.000 description 8
- 230000002950 deficient Effects 0.000 description 8
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- 230000035699 permeability Effects 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- 230000007613 environmental effect Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920002457 flexible plastic Polymers 0.000 description 2
- 239000002905 metal composite material Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 231100000673 dose–response relationship Toxicity 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000006223 plastic coating Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/17—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof
- C25B9/19—Cells comprising dimensionally-stable non-movable electrodes; Assemblies of constructional parts thereof with diaphragms
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
- G02F1/0107—Gaskets, spacers or sealing of cells; Filling and closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Sealing Battery Cases Or Jackets (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Hybrid Cells (AREA)
Abstract
本发明描述了一种多层堆叠件。所述多层堆叠件包括:(i)一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;(ii)与一层或多层无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸汽分子发生反应;(iii)其中,在所述多层堆叠件工作过程中,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,使气体分子或是蒸汽分子基本上不能从所述的多层堆叠件通过。
Description
相关申请
本申请要求于2011年1月27日提交的美国临时申请61/436,726,61/436,732和61/436,744的优先权,这些文献的内容在此并入作为参考。
发明领域
本发明主要涉及多层堆叠件及其相关的制造方法和组成物。尤其是,本发明涉及柔性的多层堆叠件,该多层堆叠件作为封装用在太阳能电池、电解池、半导体照明和发光二极管(LED)显示器等技术领域。
背景技术
现有的许多产品,如电子设备、医疗设备和药品,对水蒸气或是周围环境的气体比较敏感。当接触到水蒸气或是周围环境的气体时,这些产品可能会变质和/或性能退化。鉴于此,设置隔离涂层通常被用来作为防范这种不利暴露的保护措施。
塑料涂层或塑料层通常被用作隔离涂层。但是这种隔离涂层因其抵抗气体和液体渗透性差的特性而受到损害,这种抗渗透性的值通常低于产品所必需的抗渗透性要求几个数量级。通过举例的方式来进一步说明,某些LED显示器和太阳能电池在封装应用工艺过程中需要水汽透过率大约低于10-4克/平方米/天,相反的,针对一种常用的塑料基板聚对苯二甲酸乙二醇酯(PET)来讲,其对水气通过率大约是在1至10克/平方米/天。本技术领域人员可知,水蒸气通过率可以被认为是与水抗渗透性成反比例关系。
一些其他的方法通过在如PET的塑料膜上涂覆隔离涂层来降低水蒸气渗透性的方式来防止暴露于不希望的元素。这种隔离覆盖涂层是典型的单一的无机覆盖材料涂层,如铝、氧化硅单层、AIOx和S13N4,这些无机材料通过熟知的真空沉积工艺沉积在塑料基板上。这种单一的无机覆盖材料涂层通常能将PET对水气的渗透性值从1.0克/平方米/天降低至0.1克/平方米/天。尽管如此,单一的塑料基板上的涂层仍然不能满足必要的抗渗透要求标准。
图1为一成对层10的示意图,如图1所示的一种结构,无机阻隔层或无机隔离涂层12形成在有机膜14(例如,丙烯酸)的上方。成对层10可以作为一种保护膜沉积在聚合物基体上。无机阻隔层12由密集的氧化物颗粒组成,该无机阻隔层12作为一种常规的防渗透屏障,阻碍气体或是水分渗透进去。不管怎样,这种常规的阻隔层普遍存在缺陷,这种阻隔层能允许水气或气体通过这些氧化物颗粒,最终使位于该阻隔层下面的电子器件的性能降低,如太阳能电池和有机发光二极管。为了克服这些缺陷,在阻隔层12上设置有机层14用于消除上述的这种缺陷,同时该有机层14也作为聚合物基体的下垫面。其他特定的向聚合物基体沉积多个成对层的方法,提供了一种可预料的效果,多个成对层之间呈现的不对齐的缺陷更进一步降低了气体和水汽的渗透性。然而,沉积多个成对层导致了屏障的成本更昂贵,同时降低了最终屏障的柔性。
无论是用单层阻隔涂层、单组成对层或是多组成对层作为一种保护方法,以上所述的传统减缓扩散的方式不能达到在某些特定应用中保护其下面的聚合物层的要求(例如,太阳能电池应用,LED显示器应用)。具体而言,无机层的缺陷在于其本身不能很有效地被填充,并且它本身提供了让水分和环境气体从阻隔层扩散运动到聚合物基材表面的通道。常规的聚合物基体不能够充分保护其封装下面的产品免于被暴露在湿气和不利的气体环境中。因此,这些高分子基体下面的产品的性能随着时间的推移降低,最终导致其使用寿命大大降低。
因此,一种新的保护层及设计是急切需求的,这种保护层不仅能有效保护那些位于保护层下并对水分和气体比较敏感的产品免受水分和周围环境不利气体的破坏,而且能够克服传统的阻隔层和成对层结构所存在的缺点。
发明内容
综上所述,在一方面,本发明提供一种多层堆叠件。所述多层堆叠件包括:(i)一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;(ii)与一层或多层无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;(iii)其中,在所述多层堆叠件工作过程中,由所述无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,使气体分子或是蒸汽基本上不能从所述多层堆叠件通过。
所述蒸气或气体分子包括至少一个选自下述组的组成部分,所述组包括:水分、氧气、氮气、氢气、二氧化碳、氩气和硫化氢。按照本发明的一个优选的实施方案,所述无机阻隔层包括至少一个选自下述组的组成部分,所述组包括:金属、金属氧化物、金属氮化物、金属氮氧化物、金属碳氮化物、金属碳氧化物。无机阻隔层中的金属复合物优选包括至少一个选自下述组的组成部分,所述组包括:铝、银、硅、锌、锡、钛、钽、铌、钌、镓、铂、钒、铟和碳。
所述无机反应层优选包括至少一个选自下述组的组成部分,所述组包括:碱金属氧化物、氧化锌、二氧化钛、金属掺杂氧化锌和氧化硅。在某些特定实施例中,本发明的无机层掺杂有一个或多个非氧化物的化学成分。
所述无机阻隔层和所述无机反应层的厚度约10nm至1微米的范围。在本发明的某些实施例中,一个或多个阻隔层包括两个阻隔层,所述反应层夹持于两个阻隔层之间。所述反应层优选包括柱状结构。每一个或多个阻隔层可以由一个或多个非晶材料组成。应用在光传送领域的无机阻隔层,其最好大体上是透明的。
另一方面,本发明提供了一种太阳能电池组件。所述太阳能电池组件包括:(i)太阳能电池以及至少部分封装太阳能电池的太阳能电池封装,所述太阳能电池封装包括:a)一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;b)与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸气分子发生反应;c)在所述太阳能电池封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸气分子与所述无机反应层发生反应,使所述太阳能电池封装保护太阳能电池免受气体或蒸气分子的损害。在一个实施例中,本发明的太阳能电池选自硅基太阳能、薄膜太阳能电池、有机光伏太阳能电池和染料敏化太阳能电池中的一种。所述薄膜太阳能电池优选包括铜、铟、镓、砷、镉、碲、硒和硫中的至少一种。
在另一方面,本发明提供一种光产生模块。所述光产生模块包括:(i)光源;和(ii)用于至少部分封装所述光源的光源封装;所述光源封装包括:a)一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;b)与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸气分子发生反应;c)在所述光源封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸气分子与所述无机反应层发生反应,使所述光源封装保护光源免受气体或蒸气分子的损害。在某些实施例中,本发明的光源包括有机或无机发光二极管。
在另一方面,本发明包括一个发光二极管(LED)显示屏。所述LED显示屏,包括:(i)发光二极管;以及(ii)用于至少部分封装所述发光二极管的发光二极管封装;所述发光二极管封装包括:a)一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;b)与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸汽分子发生反应;c)在所述发光二极管封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或水蒸气分子与所述无机反应层发生反应,使所述发光二极管封装保护发光二极管免受气体或水蒸气分子的损害。在某些实施例中,本发明的LED包括有机发光二极管,也被称为OLED。
在另一方面,本发明提供了一种电解池。所述电解池包括:(i)阴极;(ii)阳极;(iii)电解质;和(iv)至少封装部分阴极、部分阳极和部分电解质的电解池封装;所述电解池封装包括:a)一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;b)与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸汽分子发生反应;c)在所述电解池封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或水蒸气分子与所述无机反应层发生反应,从而使所述电解池封装保护电解池免受气体或水蒸气分子的损害。在某些实施例中,本发明的电解池是柔性的。
另一方面,本发明提供了一种反射式显示模块。所述反射显示模块包括:(i)反射显示器;和(ii)封装至少一部分反射显示器的反射显示器封装;所述反射显示器封装包括:a)一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;b)与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或水蒸汽分子发生反应;c)在所述反射显示器封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或水蒸气分子与所述无机反应层发生反应,从而使所述反射显示器封装保护反射显示器免受气体或水蒸气分子的损害。所述反射显示器包括电泳显示器或多层液晶显示器。
在另一方面,本发明提供了一种制造多层堆叠件的方法。该方法包括:(i)将一个柔性基片装载在涂层机上;(ii)移动所述柔性基片或涂层机的部分机构,使柔性基片置于涂层机内部的第一位置处;(iii)柔性基片位于第一位置处时,在所述柔性基片上制作一个或多个无机阻隔层,该无机阻隔层能够降低蒸汽或气体分子的通过率;(iv)移动柔性基片或涂布机的部分机构,使柔性基片至于涂层机内部的第二位置处,第二位置与第一位置不同;和(v)形成与所述一个或多个无机阻隔层相邻的反应层,该反应层能与经所述无机阻隔层渗透过来的蒸气或气体分子发生反应,在所述柔性基片上的所述一个或多个阻隔层和对应的反应层结合后形成多层堆叠件。
以上所述的方法中,优选地包括,将所述多层堆叠件应用在选自下述组的至少一个组成部分上,所述组包括:太阳能电池、光源、发光二极管显示屏和电解池。所述制作步骤包括至少一项选自下述组的技术,所述组包括:溅射、反应溅射、蒸发、反应蒸发、化学气相沉积、溶液涂覆工艺和等离子体增强化学气相沉积。同样的道理,所述形成所述反应层优选包括至少一项选自下述组的技术,所述组包括:溅射、反应溅射、蒸发、反应蒸发、化学气相沉积、溶液涂覆工艺和等离子体增强化学气相沉积。所述制作步骤可以在约-20℃至约200℃之间的温度范围内进行。所述形成所述反应层的步骤可以在约-20℃至约200℃之间的温度范围内进行。所述制作步骤和所述形成步骤可以均是以辊对辊的形式进行的。
以上所述的装载步骤优选包括:(a)定位所述涂层机上的柔性基片使所述柔性基片绕在一卷轴上,(b)沿着卷轴对柔性基片进行延伸并固定,保证柔性基片至少一部分暴露,便于进行所述的无机阻隔层步骤。
以上所述过程中的制作步骤和所述形成步骤期间,所述柔性基片可接触一滚筒,该滚筒的温度设置在约-20℃至约200℃的范围内。
在另一方面,本发明提供了一种多层堆叠件的组成成分。该组成成分包括:(i)减小气体或蒸气分子渗透通过量的无机阻隔层,和该无机阻隔层包括由金属、金属氧化物、金属氮化物、金属氧氮化物、金属碳氮化物和金属碳氧化物氮化物组成的组中的至少一种物质;及(ii)无机反应层包括适量的反应材料,这种反应材料能与经无机阻隔层渗透过的气体或蒸汽分子发生反应,该反应材料包括由碱金属氧化物、氧化锌、二氧化钛基、金属锌掺杂氧化物和氧化硅组成的组中的至少一种物质。所述无机阻隔层中的至少一种成分的重量百分比约介于1%至100%之间,同理,所述至少一种反应材料的重量百分比约介于1%至100%之间。
然而,当结合附图阅读时,可以由以下的具体实施方式的描述中得到对本发明的构建和操作方法以及附加的目标和优点的最好的理解。
附图说明
图1为常规的用于封装太阳能电池的阻隔层的剖视图;
图2为本发明所描述的用于防止水分和其他不利环境气体破坏的多层堆叠件的一实施例的示意图;
图3为本发明所描述的用于防止水分和其他不利环境气体破坏的多层堆叠件另一实施例的侧截面视图;
图4是可用于如图2和/或图3所示的多层堆叠件实施例中的柱状型反应层结构透视图;
图5是促进本发明所描述的能以辊对辊的形式方式进行多层堆叠件加工的涂层机的实施例的俯视图。
具体实施方式
为了能对本发明的作一个透彻的了解,在下面的描述中,许多与本发明相关的具体细节将被阐明。然而,在没有这些具体细节中的一些或全部的情况下,可以实施本发明对本领域的技术人员来讲是显而易见的。另外,公知的过程步骤不加以详细描述以免产生不必要的混淆。
图2显示了一多层堆叠件200,其中包括一阻隔层202和一反应层204,反应层204与阻隔层202相邻设置。多层堆叠件200结合在基底上,基底优选是柔性塑料基底。作为一种优选实施方式,本发明所描述的多层堆叠件可作为一种封装应用于多个技术领域。例如,一种其上设置有多层堆叠件200的塑料基底用于封装太阳能电池、电解池、光产生模块、发光二极管(LED)显示器和反射显示器等,防止其封装的部分暴露在水分、不利气体或周围的环境气体中。
在多层堆叠件200中,阻隔层202作为一个隔离水分和不利气体的屏障,不利气体如氧气、氮气、氢气、二氧化碳、氩气和硫化氢。阻隔层202包括选自金属、金属氧化物、金属氮化物、金属氧氮化物、金属碳氮化物和金属碳氧化物组成的组中的至少一种材料。此外,阻隔层102优选地包括碳元素和氧元素,这两个元素可以以他们的原子形式或是以化合物的组成部分的形式存在。例如,一种阻隔层202包括二氧化硅、氧化铝、氮化铝、氮氧化铝、氧化钽、氧化铌、氮化硅、氮氧化硅、碳氧化硅和碳氮化硅。
阻隔层202可以由单层或多层的无机材料制成。本发明的一个优选实施例中,阻隔层202包括一种非晶材料。当一个以上的层使用时,作为一种优选实施方式,不同层之间相邻堆叠。每一层的无机材料的类型没有必要是一样的,且在本发明的一些特定实施例中每一层的材料的类型是不相同的。虽然阻隔层202可以由任何无机材料制成作为前面所提及到的不利气体的屏障,在本发明的优选实施例中,阻隔层202包括一个金属组合物,其可以以其单质形式或是作为一个化合物(如前面所述的化合物)的形式存在于阻隔层202里,其包含的金属选自铝、银、硅、锌、锡、钛、钽、铌、钌、镓、铂、钒和铟组成的组中的至少一种。举例来说,一个金属氧化物包括AlxOy或SiOx。阻隔层202上存在的具有的一定量的金属或金属氧化物降低了不利气体或蒸气分子通过阻隔层的通过量。本发明的优选实施例中,在阻隔层202中,金属或金属氧化物所占的重量百分比约在1%至100%之间,优选在1%至50%之间。
阻隔层202的厚度约为在10nm至1微米之间,优选厚度在20纳米至300纳米范围内。
阻隔层202目的是降低气体或蒸气分子的通过量,但并不是完全能够防止水分子和特定的不利气体。针对这个情况,本发明增设一反应层204,其作用是与那些穿过阻隔层202的水分和不利气体反应,不利气体如氧气、氮气、氢气、二氧化碳、氩气和硫化氢。根据传统技术知识可知,因其自身的反应特性,反应层204并不适合应用在太阳能电池和其他应用领域中,因为它吸收了水分和周围环境中的不利的气体,使产品性能下降,并最终导致产品失效。然而,本发明以一种利于隔离膜应用的方式,创新地利用了反应层204这种能够吸收水分和周围环境气体的这种特性。具体而言,透过阻隔层202的水分、环境气体或不利气体,进一步与反应层204反应,使水分、环境气体或不利气体基本不会渗透并通过多层堆叠件200。
反应层204可由任何无机材料制成,优选地选用化学性质同质的。然而,在本发明的优选实施例中,反应层204至少包括下述组中的至少一种反应材料,所述组包括碱金属氧化物,氧化锌,二氧化钛,金属掺杂氧化锌和氧化硅。在本发明的某些实施例中,反应层204中掺杂一种或多种非氧化物的化学成分。作为代表性的实例,这种非氧化物掺杂剂材料包括碱金属,如钙、钠和锂等。
一个或多个反应层可由相同的材料或不同材料制成。如阻隔层202一样,反应层204也可以包括一个或多个反应层,且反应层之间彼此相邻设置。反应层204包括有效剂量反应性材料,这些材料能够与水分、不利气体或周围环境气体发生反应,这些水分、不利气体或周围环境气体是由与该反应层204相邻的阻隔层渗透过来的。在本发明的优选实施例中,在反应层204中,反应材料所占的重量百分比约在1%至100%的范围内。然而,作为一种更优选的实施例,本发明中反应层204的反应材料的重量百分比约在90%至100%范围之内。
反应层204总厚度值可以是约在10纳米至1微米之间,优选值约在20nm至500nm的范围内。在某些应用场合中,多层堆叠件200被设置在塑料基板产品上当作一种密封材料,此时会面临一个风险,即在该产品运输,搬运及贮藏的过程中,水分、不利气体或环境气体透过塑料基板与反应层204发生反应。结果是,反应层204的反应特性被提前耗尽而消失,进而导致多层堆叠件200的隔离作用失效。针对这种情况,本发明特定的优选实施例,在塑料基板和反应层之间增设一阻隔层。
如果反应层204与阻隔层202的组成成分相似,那么反应层204最好尽量与阻隔层202在结构,成分掺杂比例,结晶程度(包括其中一种是非结晶的,同时另一种是结晶的),对水分、不利气体或环境气体结合的反应性等几个方面保持充分的不同。
图3显示了本发明的另一实施例多层堆叠件300。多层堆叠件300包括阻隔层302、阻隔层306和位于两阻隔层之间的反应层304。图3所示的反应层304与图2所示的反应层204基本相同,图3所示的阻隔层302和阻隔层306与图2所示的阻隔层202也基本相同。与前面所述的多层堆叠件200一样,多层堆叠件300通常也可被设置在任意的基板上。作为一种优选实施例,多层堆叠件300设置在柔性的塑料基板上。
鉴于图3所示的多层堆叠件的构造特性,那些通过塑料基板上的水分,不利气体或周围环境的气体在他们到达反应层304之前已经被阻隔层302所隔开。因此,阻隔层302能够保护反应层304免受由高分子聚合物基板上透过的水分,不利气体或周围环境的气体的破坏。
无论是图2所示多层堆叠件200中应用的反应层204,还是图3所示多层堆叠件300中应用的反应层304,一个组分的反应层优选具有柱状结构组织404,如图4所示,该柱状结构组织配置成反应层(例如,图2所示的反应层204或图3所示的反应层304)。具有柱状结构组织的反应层代表了本发明的一种优选的实施方案,因为这种柱状型结构能够增大反应层的能与扩散化学物质反应的表面积。
虽然图2和图3所示的本发明的阻隔层和反应层之间是相互接触的,但是在实施本发明的过程中,并不一定必须以这种方式进行。在本发明的某些实施例中,具有一种或多种不同功能的中间层可以被设置在阻隔层和反应层之间。举例来说,当需要对阻隔层的表面进行平整时,或反应层的表面进行平整时,或同时对阻隔层和反应层的表面进行平整时,在反应层和阻隔层之间可以插入设置中间层实现这个目的。本说明书描述阻隔层与反应层相邻连接时用的是“邻接”二字,然而,在这种使用场合下,“邻接”的含义不仅仅局限于阻隔层与反应层两者之间为接触连接这个含义,且涵盖了当一个或多个中间层插入设置在阻隔层与反应层之间时,阻隔层与反应层之间仍为“邻接”关系的这种意思。
此外,根据以上所述的优选实施例中,发明所涉及到的阻隔层和反应层均是由一种或多种不同类型的无机材料制成。然而,在本发明的其他实施例中,本发明所涉及到的阻隔层和反应层的制成材料并不局限于此。本发明的某些实施例中,本发明所涉及到的阻隔层和反应层由一种或多种不同类型的有机材料制成。
在本发明的优选实施例中,图2中的多层堆叠件200,和图3中的多层堆叠件300被用来作为一种封装。作为一种实施例,在太阳电池应用领域,本发明的多层堆叠件用来封装太阳能电池。作为另一种实施例,在具有光产生模块的照明应用领域,本发明的多层堆叠件用于封装光源。作为又一实施例,在电解池应用领域,本发明的多层堆叠件用来封装阴极,阳极和电解质。作为又一实施例,在显示器应用领域,本发明的多层堆叠件用于封装显示器,如LED显示屏或反射式显示器。对本领域技术人员来讲,本领域技术人员能够认识到,利用现有的技术可以完成对太阳能电池、光产生模块、电解池、LED显示器和反射式显示器的封装。
根据传统观点,当一层膜与相邻的另一层膜堆积形成多层堆叠件时,其中一层膜所带有的缺陷会传给与其到相邻的那层膜。当多层堆叠件的层数越多时,这种缺陷传播的现象会进一步加剧。作为一种与上述情况形成鲜明对比的是,本发明意外地发现,由无机材料构成的层不仅能够覆盖与其相邻的层所带有的缺陷,而且还可以使相邻层的面平整。因此,本发明多层堆叠件对水和气的隔离应用领域是非常有利地,因为本发明阻止或大大减少了缺陷或存在弊端的结构从一层传播到另一层这种现象的发生。
虽然本发明多层堆叠件可使用本领域技术人员所熟知的任何技术加工制造而成,作为一种优选实施方式,选用辊对辊形式的制造生产技术,这种加工模式可以获得相对较高的产量。图5为作为本发明的一个实施例涂层机500的俯视图。涂层机也被称为“辊式涂层机”,其外套有一卷柔性薄膜。所述涂层机500包括一个退绕辊502、导辊504、卷取辊506、温度控制沉积滚筒508、一个或多个沉积区510和沉积室512。一个或多个沉积区510均包括靶材料、电源和百叶窗,该靶材料最终将会被用于沉积在柔性基片上,下面将详细说明。
作为本发明的一个实施例,涂层工艺开始时,首先,将柔性基片514装载在退绕辊502上。柔性基片514优选缠绕设置在装载在退绕辊502的一转轴上。通常将缠绕设置在转轴上的部分柔性基片514顺势拉出,并将拉出的柔性基片514沿着导辊504及滚筒508的外壁方向,依次将柔性基片514贴绕设置在托辊504及滚筒508的外表面上,其中该滚筒508可以转动,最终将柔性基片514的一端连接设置在卷绕辊506上。在涂层机500工作过程中,退绕辊502、卷绕辊506和沉积鼓508均转动,使柔性基片514能够从多个位置对沉积鼓508进行降温。
当柔性基片514被装在涂层机500内,接着,涂层工艺包括通过撞击的方式将等离子体打入沉积区510内。在涂层区,百叶窗指引等离子场的带电粒子相互碰撞并喷射靶材料,最终将靶材料沉积在柔性基片上。在涂层过程中,柔性基片514的温度优选用沉积鼓508控制,这样基片才不会遭受破坏。本发明的实施例中,柔性基片514包含有聚合物材料,沉积滚筒508被降温冷却,进而保证沉积鼓508的温度是接近或低于聚合物材料的玻璃态转化温度。这种冷却作用防止聚合物基板在沉积过程中发生熔融,从而避免了那些还没有达到沉积鼓508上的聚合物基板可能会自身发生降解这种现象的发生。
从图5中可以看出,设置有多个沉积区,每个沉积区仅对应影响一种特定材料在聚合物基片上的沉积。例如,在一个沉积区,靶材料包括金属、金属氧化物、金属氮化物、金属氧氮化物、金属碳氮化物和金属氧碳化合物中的至少一种成分,这些材料均能够促进阻隔层(例如,包括图2中阻隔层202或至少一个图3中的阻隔层302和306)的沉积。再如,在另一个沉积区的靶材料包括碱金属氧化物、氧化锌、二氧化钛、金属掺杂氧化锌和氧化硅中的至少一种材料,这种材料用于制造反应层(例如,图2中的反应层204或图3中的反应层304)。通过移动柔性基片514从一个位置到另一个位置,不同类型、不同厚度以及不同的沉积区的靶材料均可以在基片上被沉积。涂层机500可用于实现包括至少一个选自下述组的技术,所述组包括溅射、反应离子溅射、蒸发、反应蒸发、化学气相沉积和等离子体增强化学气相沉积。
应注意的是,本发明的创造性特征在于可以通过保持基片固定不动的同时移动涂层机的至少一个部分的方式或者通过同时移动基片和涂层机的方式实现促进多个层的沉积,而不是通过把基片从一个位置移动到另一个位置来促进多个层的沉积。
不管实现沉积的具体过程如何,都将意识到,本发明中的辊对辊技术能够允许不同类型和不同厚度的涂层快速沉积在基板上,最终沉积形成本发明多层堆叠件。本发明中创造性的辊对辊制造工艺能实现高生产量,以此增加收入。在当前形势下,太阳能电池产业正在面临一个新的挑战,太阳能电池行业可能会成为一种在商业方面可行的新的技术方案,并替代传统能源行业,本发明的多层堆叠件和加工方法与传统的技术和加工方法相比取得了很大程度上的改善。
如上所述,图3中的多层堆叠件300的阻隔层和反应层可以由合适的无机氧化物材料制成,进而使得到的多层堆叠件同时具有柔性和抗水性的特点。由本发明可知,如果因吸附作用而通过阻隔层的水蒸气量是受限制的,那么位于多层堆叠件内部的反应层会具有一个较长的使用寿命。此外,由本发明仍可知,可以通过将到达阻隔层和反应层交界面的水蒸气量降低至最低值,来实现以上所述的阻隔层对于水蒸气具有有限吸附量的效果。
上述仅为本发明的一部分实施例,其它修改、变化及同等替换也都在本发明的公开范围内。通过实施例的方式,本发明公开了一种阻隔气体和水的阻隔层;另外本发明也公开了通过该阻隔层降低有机物通过率的使用方法,该阻隔层的加工方法,及本发明阻隔层的组合成分。因此,广泛地解释所附的权利要求,并且与如下权利要求所述本发明的范围一致的解释方式是合理的。
Claims (36)
1.一种多层堆叠件,包括:
一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;
与所述一层或多层无机阻隔层相邻设置的无机反应层,该无机反应层能够与所述气体分子或水蒸汽分子发生反应;
其中,在所述多层堆叠件处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,从而所述气体分子或蒸汽分子不能从所述多层堆叠件渗透穿过。
2.如权利要求1所述的多层堆叠件,其特征在于,所述蒸汽或气体分子包括至少一个选自下述组的组成部分,所述组包括:水分、氧气、氮气、氢气、二氧化碳、氩气和硫化氢。
3.如权利要求1所述的多层堆叠件,其特征在于,所述无机阻隔层包括至少一个选自下述组的组成部分,所述组包括:金属、金属氧化物、金属氮化物、金属氧氮化物、金属碳氮化物和金属氧碳化合物。
4.如权利要求3所述的多层堆叠件,其特征在于,所述无机阻隔层包括至少一个选自下述组的组成部分,所述组包括:铝、银、硅、锌、锡、钛、钽、铌、钌、镓、铂、钒和铟。
5.如权利要求1所述的多层堆叠件,其特征在于,所述无机反应层包括至少一个选自下述组的组成部分,所述组包括:碱金属氧化物、氧化锌、二氧化钛、金属掺杂氧化锌和氧化硅。
6.如权利要求5所述的多层堆叠件,其特征在于,所述无机反应层中掺杂有一种或多种非氧化物的化学成分。
7.如权利要求5所述的多层堆叠件,其特征在于,所述无机反应层包含一种无机基质。
8.如权利要求1所述的多层堆叠件,其特征在于,所述无机阻隔层的厚度约10nm至约1μm之间。
9.如权利要求1所述的多层堆叠件,其特征在于,所述无机反应层的厚度约为10nm至约1μm之间。
10.如权利要求1所述的多层堆叠件,其特征在于,所述一个或多个阻隔层包括两层无机阻隔层,其中所述无机反应层夹在两层无机阻隔层之间。
11.如权利要求1所述的多层堆叠件,其特征在于,所述无机反应层包括柱状形结构。
12.如权利要求1所述的多层堆叠件,其特征在于,所述一层或多层无机阻隔层中的任意一层由一种或多种非晶材料制成。
13.如权利要求1所述的多层堆叠件,其特征在于,所述无机阻隔层是基本透明的。
14.一种太阳能电池组件,包括:
太阳能电池;以及
至少部分封装太阳能电池的太阳能电池封装,所述太阳能电池封装包括:
一层或多层用于降低气体分子或水蒸气分子通过率的无机阻隔层;
与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;
其中在所述太阳能电池封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,使所述太阳能电池封装保护所述太阳能电池免受气体或蒸汽分子的损害。
15.如权利要求13所述的太阳能电池组件,其特征在于,所述太阳能电池选自下述组中的一种,所述组包括:硅基太阳能电池、薄膜太阳能电池、有机光伏太阳能电池和染料敏化太阳能电池。
16.如权利要求13所述的太阳能电池组件,其特征在于,所述薄膜太阳能电池包括至少一个选自下述组的组成部分,所述组包括:铜、铟、镓、砷、镉、碲、硒和硫。
17.一种光产生模块,包括:
光源;和
用于至少部分封装所述光源的光源封装;所述光源封装包括:
一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;
与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;
其中在所述光源封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,使所述光源封装保护所述光源免受气体或蒸汽分子的损害。
18.如权利要求16所述的光产生模块,其特征在于,所述光源包括有机或无机发光二极管。
19.一种发光二极管显示屏,包括:
发光二极管;以及
用于至少部分封装所述发光二极管的发光二极管封装,所述发光二极管封装包括:
一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;
与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;
其中在所述发光二极管封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,使所述发光二极管封装保护所述发光二极管免受气体或蒸汽分子的损害。
20.如权利要求18所述的发光二极管显示屏,其特征在于,所述发光二极管包括有机发光二极管,也被称为OLED。
21.一种电解池;包括:
阴极;
阳极;
电解质;和
至少部分封装所述阴极、所述阳极和所述电解质的电解池封装,所述电解池封装包括:
一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;
与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;
其中在所述电解池封装处于工作状态时,由一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,从而使电解池封装保护电解池免受气体或蒸汽分子的损害。
22.如权利要求21所述的电解池,其特征在于:所述电解池是柔性和轻量的。
23.一种反射显示器模块;包括:
反射显示器;和
至少部分封装所述反射显示器的反射显示器封装,所述反射显示器封装包括:
一层或多层用于降低气体分子或蒸汽分子通过率的无机阻隔层;
与所述一层或多层的无机阻隔层相邻设置的无机反应层,该无机反应层能够与气体分子或蒸汽分子发生反应;
其中在所述反射显示器封装处于工作状态时,由所述一层或多层无机阻隔层渗透出的气体分子或蒸汽分子与所述无机反应层发生反应,从而使所述反射显示器封装保护所述反射显示器免受气体或蒸汽分子的损害。
24.如权利要求23所述的反射显示模块,其特征在于,所述反射显示器包括电泳显示器或多层液晶显示器。
25.一种制造多层堆叠件的方法,该方法包括:
将一个柔性基片装载在涂层机上;
移动所述柔性基片或涂层机的部分机构,使所述柔性基片置于所述涂层机内部的第一位置处;
在所述柔性基片位于第一位置处时,在所述柔性基片上制作一个或多个无机阻隔层,该无机阻隔层能够降低蒸气或气体分子的通过率;
移动所述柔性基片或涂布机的部分机构,使所述柔性基片至于所述涂层机内部的第二位置处,其中第二位置与第一位置不同;和
形成与所述一个或多个无机阻隔层相邻的反应层,该反应层能与经所述无机阻隔层渗透过来的蒸气或气体分子发生反应,在所述柔性基片上的所述一个或多个阻隔层和对应的反应层结合后形成多层堆叠件。
26.如权利要求25所述的制造多层堆叠件的方法,其特征在于,其还包括:将所述多层堆叠件应用在选自下述组的至少一个组成部分上,所述组包括:太阳能电池、光源、发光二极管显示屏和电解池。
27.如权利要求25所述的制造多层堆叠件的方法,其特征在于,所述制作所述一个或多个无机阻隔层包括至少一项选自下述组的技术,所述组包括:溅射、反应溅射、蒸发、反应蒸发、化学气相沉积、溶液涂覆工艺和等离子体增强化学气相沉积。
28.如权利要求25所述的制造多层堆叠件的方法,其特征在于,所述形成所述反应层包括至少一项选自下述组中的技术,所述组包括:溅射、反应溅射、蒸发、反应蒸发、化学气相沉积、溶液涂覆工艺和等离子体增强化学气相沉积。
29.如权利要求25所述的制造多层堆叠件的方法,其特征在于,所述制作一个或多个无机阻隔层是在约-20℃至约200℃之间的温度范围内进行的。
30.如权利要求25所述的一种制造多层堆叠件的方法,其特征在于,所述形成所述反应层是在约-20℃至约200℃之间的温度范围内进行的。
31.如权利要求25所述的制造多层堆叠件的方法,其特征在于,所述制作所述一个或多个阻隔层或所述形成所述反应层均是以辊对辊的形式进行的。
32.如权利要求25所述的制造多层堆叠件的方法,其特征在于,所述装载包括:
定位所述涂层机上的柔性基片使所述柔性基片绕在一卷轴上;
沿着所述卷轴对所述柔性基片进行延伸并固定,保证所述柔性基片至少一部分暴露,便于进行所述制作。
33.如权利要求25所述的制造多层堆叠件的方法,其特征在于,在所述制作所述一个或多个无机阻隔层和所述形成所述反应层时所述柔性基片均接触一滚筒,该滚筒的温度设置在约-20℃至约200℃的范围内。
34.一种多层堆叠件的组成成分,包括:
用于减少气体或蒸气分子通过的无机阻隔层,所述无机阻隔层包括金属、金属氧化物、金属氮化物、金属氧氮化物、金属碳氮化物和金属氧碳氮化合物中的至少一种成分;及
无机反应层,其包括适量的反应材料,这种反应材料能与经所述无机阻隔层渗透过的气体或蒸汽分子发生反应,该反应材料包括由碱金属氧化物、氧化锌、二氧化钛、金属掺杂氧化锌和氧化硅组成物的至少一种材料。
35.如权利要求34所述的多层堆叠件的组成成分,其特征在于:所述无机阻隔层含有的至少一种材料,其重量百分比约介于1%至100%之间。
36.如权利要求34所述的多层堆叠件的组成成分,其特征在于:所述至少一种反应材料的重量百分比约介于1%至100%之间。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710090395.2A CN107097484A (zh) | 2011-01-27 | 2012-01-27 | 无机多层堆叠件及其相关的制造方法以及组成成分 |
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161436744P | 2011-01-27 | 2011-01-27 | |
US201161436732P | 2011-01-27 | 2011-01-27 | |
US201161436726P | 2011-01-27 | 2011-01-27 | |
US61/436,726 | 2011-01-27 | ||
US61/436,732 | 2011-01-27 | ||
US61/436,744 | 2011-01-27 | ||
PCT/US2012/022809 WO2012103390A2 (en) | 2011-01-27 | 2012-01-27 | An inorganic multilayer stack and methods and compositions relating thereto |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710090395.2A Division CN107097484A (zh) | 2011-01-27 | 2012-01-27 | 无机多层堆叠件及其相关的制造方法以及组成成分 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103328205A true CN103328205A (zh) | 2013-09-25 |
CN103328205B CN103328205B (zh) | 2017-03-08 |
Family
ID=46581414
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710090395.2A Pending CN107097484A (zh) | 2011-01-27 | 2012-01-27 | 无机多层堆叠件及其相关的制造方法以及组成成分 |
CN201280006469.5A Expired - Fee Related CN103328205B (zh) | 2011-01-27 | 2012-01-27 | 无机多层堆叠件及其相关的制造方法以及组成成分 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710090395.2A Pending CN107097484A (zh) | 2011-01-27 | 2012-01-27 | 无机多层堆叠件及其相关的制造方法以及组成成分 |
Country Status (10)
Country | Link |
---|---|
US (1) | US10522695B2 (zh) |
EP (1) | EP2668034A4 (zh) |
JP (2) | JP6096126B2 (zh) |
KR (1) | KR101909310B1 (zh) |
CN (2) | CN107097484A (zh) |
AU (1) | AU2012211217B2 (zh) |
BR (1) | BR112013019014A2 (zh) |
MY (1) | MY161553A (zh) |
RU (1) | RU2605560C2 (zh) |
WO (1) | WO2012103390A2 (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390617A (zh) * | 2014-08-22 | 2016-03-09 | 柯尼卡美能达株式会社 | 有机电致发光元件 |
CN105821395A (zh) * | 2015-01-22 | 2016-08-03 | 成均馆大学校产学协力团 | 金属氧化物薄膜的沉积方法及其制备装置 |
CN107208265A (zh) * | 2015-01-20 | 2017-09-26 | 巴斯夫涂料有限公司 | 生产挠性有机‑无机层合物的方法 |
CN108885380A (zh) * | 2016-03-25 | 2018-11-23 | 日东电工株式会社 | 调光薄膜的制造方法 |
CN109980073A (zh) * | 2017-12-27 | 2019-07-05 | Tcl集团股份有限公司 | 一种封装薄膜及其制备方法、光电器件 |
CN111599934A (zh) * | 2020-05-07 | 2020-08-28 | Tcl华星光电技术有限公司 | 显示面板及其制备方法 |
CN113079600A (zh) * | 2020-01-06 | 2021-07-06 | 佛山市顺德区美的电热电器制造有限公司 | 复合材料、电器和制备复合材料的方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6096126B2 (ja) | 2011-01-27 | 2017-03-15 | ヴィトリフレックス・インコーポレーテッド | 無機多層積層体並びにそれに関連する方法及び構成物 |
MY175677A (en) * | 2012-08-31 | 2020-07-06 | Vitriflex Inc | Novel barrier layer stacks and methods and compositions thereof |
CN103855308B (zh) * | 2012-11-30 | 2016-04-27 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
KR20140077624A (ko) * | 2012-12-14 | 2014-06-24 | 삼성디스플레이 주식회사 | 롤투롤 공정용 플렉서블 기판 및 이의 제조 방법 |
US8927439B1 (en) | 2013-07-22 | 2015-01-06 | Rohm And Haas Electronic Materials Llc | Organoaluminum materials for forming aluminum oxide layer from coating composition that contains organic solvent |
KR102182521B1 (ko) | 2014-12-30 | 2020-11-24 | 코오롱글로텍주식회사 | 고유연성 배리어 섬유기판 및 그의 제조방법 |
KR101942749B1 (ko) * | 2015-12-08 | 2019-01-28 | 한국생산기술연구원 | 다층무기봉지박막 및 이의 제조방법 |
US9970102B2 (en) * | 2016-02-08 | 2018-05-15 | International Business Machines Corporation | Energy release using tunable reactive materials |
JP6263242B1 (ja) * | 2016-08-31 | 2018-01-17 | 株式会社フジクラ | 光電変換素子 |
WO2018063208A1 (en) * | 2016-09-29 | 2018-04-05 | Intel Corporation | Metal aluminum gallium indium carbide thin films as liners and barriers for interconnects |
JP6907032B2 (ja) * | 2017-06-06 | 2021-07-21 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN108529714B (zh) * | 2018-05-08 | 2021-02-26 | 中国科学技术大学苏州研究院 | 光电化学反应池及其处理硫化氢废气和废水的方法 |
CN109786488B (zh) * | 2019-01-14 | 2022-03-15 | 江苏林洋光伏科技有限公司 | 一种具有阻水阻中远红外光功能柔性光伏组件封装前板 |
CN110071188B (zh) * | 2019-05-09 | 2020-12-08 | 蚌埠市维光塑胶制品有限公司 | 一种用于太阳能电池背板防护的复合膜材料 |
WO2022233737A1 (en) * | 2021-05-05 | 2022-11-10 | Syddansk Universitet | A method of passivating surface effects in metal oxide layers and devices comprising thereof |
WO2023280598A1 (en) * | 2021-07-08 | 2023-01-12 | Agfa-Gevaert Nv | A separator for alkaline water electrolysis |
CN113593413B (zh) * | 2021-07-30 | 2023-09-29 | 昆山国显光电有限公司 | 一种显示面板及显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1376111A (zh) * | 2000-05-26 | 2002-10-23 | 利乐拉瓦尔集团及财务有限公司 | 包装用层压板的制造方法 |
CN1678409A (zh) * | 2001-09-28 | 2005-10-05 | 维特克斯系统公司 | 边缘密封阻隔膜的方法 |
CN1708395A (zh) * | 2002-10-29 | 2005-12-14 | 阿尔科封盖系统国际公司 | 具有多层氧气阻挡衬里的容器封口 |
CN1922009A (zh) * | 2004-02-19 | 2007-02-28 | 东洋制罐株式会社 | 塑料多层结构 |
US20080078444A1 (en) * | 2006-06-05 | 2008-04-03 | Translucent Photonics, Inc. | Thin film solar cell |
CN101330971A (zh) * | 2005-12-15 | 2008-12-24 | 三井金属矿业株式会社 | 脱氧剂以及脱氧剂的制造方法 |
WO2010023899A1 (ja) * | 2008-08-26 | 2010-03-04 | 三菱瓦斯化学株式会社 | 脱酸素性多層体 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5318685A (en) * | 1987-08-18 | 1994-06-07 | Cardinal Ig Company | Method of making metal oxide films having barrier properties |
SE9804090D0 (sv) * | 1998-11-26 | 1998-11-26 | Tetra Laval Holdings & Finance | Multilayer structure for packaging and packaging containers manufactured therefrom, as well as method for manufacturing of the multilayer structure |
AU1669400A (en) | 1998-12-17 | 2000-07-03 | Cambridge Display Technology Limited | Organic light-emitting devices |
US20030203210A1 (en) * | 2002-04-30 | 2003-10-30 | Vitex Systems, Inc. | Barrier coatings and methods of making same |
US20060063015A1 (en) * | 2004-09-23 | 2006-03-23 | 3M Innovative Properties Company | Protected polymeric film |
US20060093795A1 (en) * | 2004-11-04 | 2006-05-04 | Eastman Kodak Company | Polymeric substrate having a desiccant layer |
US7381631B2 (en) * | 2005-07-05 | 2008-06-03 | Hewlett-Packard Development Company, L.P. | Use of expanding material oxides for nano-fabrication |
WO2007069735A1 (ja) | 2005-12-15 | 2007-06-21 | Mitsui Mining & Smelting Co., Ltd. | 脱酸素剤及び脱酸素剤の製造方法 |
WO2007096565A2 (fr) * | 2006-02-22 | 2007-08-30 | Saint-Gobain Glass France | Dispositif electroluminescent organique et utilisation d'une couche electroconductrice transparente dans un dispositif electroluminescent organique |
US7608308B2 (en) * | 2006-04-17 | 2009-10-27 | Imra America, Inc. | P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates |
US7674662B2 (en) * | 2006-07-19 | 2010-03-09 | Applied Materials, Inc. | Process for making thin film field effect transistors using zinc oxide |
AU2006350626B2 (en) * | 2006-11-06 | 2013-09-19 | Agency For Science, Technology And Research | Nanoparticulate encapsulation barrier stack |
GB2447091B8 (en) * | 2007-03-02 | 2010-01-13 | Photonstar Led Ltd | Vertical light emitting diodes |
WO2009053886A2 (en) * | 2007-10-25 | 2009-04-30 | Koninklijke Philips Electronics N.V. | Organic electro-optical device, light source, display device and solar cell |
FR2924863B1 (fr) | 2007-12-07 | 2017-06-16 | Saint Gobain | Perfectionnements apportes a des elements capables de collecter de la lumiere. |
BRPI0819548A2 (pt) * | 2007-12-28 | 2015-05-19 | 3M Innovative Properties Co | "sistemas de filme de encapsulação flexível" |
US8193018B2 (en) * | 2008-01-10 | 2012-06-05 | Global Oled Technology Llc | Patterning method for light-emitting devices |
KR101490112B1 (ko) * | 2008-03-28 | 2015-02-05 | 삼성전자주식회사 | 인버터 및 그를 포함하는 논리회로 |
WO2010049743A1 (en) * | 2008-04-07 | 2010-05-06 | Guiseppe Giovanni Bogani | Multilayer material |
JP4931858B2 (ja) * | 2008-05-13 | 2012-05-16 | パナソニック株式会社 | 有機エレクトロルミネッセント素子の製造方法 |
KR101084267B1 (ko) | 2009-02-26 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
JP5550848B2 (ja) * | 2009-04-17 | 2014-07-16 | 株式会社Shカッパープロダクツ | 配線構造の製造方法、及び配線構造 |
CA2773073C (en) * | 2009-09-11 | 2020-09-15 | Jp Laboratories, Inc. | Monitoring devices and processes based on transformation, destruction and conversion of nanostructures |
DK2483926T3 (en) * | 2009-09-29 | 2019-03-25 | Res Triangle Inst | Optoelectronic devices with quantum dot-fullerene transition |
US20110206777A1 (en) * | 2010-02-20 | 2011-08-25 | Vellore Institute Of Technology | Inorganic oxide nano materials as anti-microbial agents |
JP6096126B2 (ja) * | 2011-01-27 | 2017-03-15 | ヴィトリフレックス・インコーポレーテッド | 無機多層積層体並びにそれに関連する方法及び構成物 |
JP2013168242A (ja) * | 2012-02-14 | 2013-08-29 | Canon Inc | 有機発光装置の製造方法 |
-
2012
- 2012-01-27 JP JP2013551351A patent/JP6096126B2/ja not_active Expired - Fee Related
- 2012-01-27 BR BR112013019014A patent/BR112013019014A2/pt not_active IP Right Cessation
- 2012-01-27 WO PCT/US2012/022809 patent/WO2012103390A2/en active Application Filing
- 2012-01-27 US US13/981,317 patent/US10522695B2/en not_active Expired - Fee Related
- 2012-01-27 EP EP12739625.7A patent/EP2668034A4/en not_active Withdrawn
- 2012-01-27 CN CN201710090395.2A patent/CN107097484A/zh active Pending
- 2012-01-27 RU RU2013137882/05A patent/RU2605560C2/ru not_active IP Right Cessation
- 2012-01-27 AU AU2012211217A patent/AU2012211217B2/en not_active Ceased
- 2012-01-27 KR KR1020137022488A patent/KR101909310B1/ko active IP Right Grant
- 2012-01-27 MY MYPI2013002783A patent/MY161553A/en unknown
- 2012-01-27 CN CN201280006469.5A patent/CN103328205B/zh not_active Expired - Fee Related
-
2016
- 2016-12-01 JP JP2016234148A patent/JP2017047689A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1376111A (zh) * | 2000-05-26 | 2002-10-23 | 利乐拉瓦尔集团及财务有限公司 | 包装用层压板的制造方法 |
CN1678409A (zh) * | 2001-09-28 | 2005-10-05 | 维特克斯系统公司 | 边缘密封阻隔膜的方法 |
CN1708395A (zh) * | 2002-10-29 | 2005-12-14 | 阿尔科封盖系统国际公司 | 具有多层氧气阻挡衬里的容器封口 |
CN1922009A (zh) * | 2004-02-19 | 2007-02-28 | 东洋制罐株式会社 | 塑料多层结构 |
CN101330971A (zh) * | 2005-12-15 | 2008-12-24 | 三井金属矿业株式会社 | 脱氧剂以及脱氧剂的制造方法 |
US20080078444A1 (en) * | 2006-06-05 | 2008-04-03 | Translucent Photonics, Inc. | Thin film solar cell |
WO2010023899A1 (ja) * | 2008-08-26 | 2010-03-04 | 三菱瓦斯化学株式会社 | 脱酸素性多層体 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390617A (zh) * | 2014-08-22 | 2016-03-09 | 柯尼卡美能达株式会社 | 有机电致发光元件 |
CN107208265A (zh) * | 2015-01-20 | 2017-09-26 | 巴斯夫涂料有限公司 | 生产挠性有机‑无机层合物的方法 |
CN107208265B (zh) * | 2015-01-20 | 2021-03-23 | 巴斯夫涂料有限公司 | 生产挠性有机-无机层合物的方法 |
US10988844B2 (en) | 2015-01-20 | 2021-04-27 | Basf Coatings Gmbh | Process for producing flexible organic-inorganic laminates |
CN105821395A (zh) * | 2015-01-22 | 2016-08-03 | 成均馆大学校产学协力团 | 金属氧化物薄膜的沉积方法及其制备装置 |
CN105821395B (zh) * | 2015-01-22 | 2019-08-13 | 成均馆大学校产学协力团 | 金属氧化物薄膜的沉积方法及其制备装置 |
CN108885380A (zh) * | 2016-03-25 | 2018-11-23 | 日东电工株式会社 | 调光薄膜的制造方法 |
CN109980073A (zh) * | 2017-12-27 | 2019-07-05 | Tcl集团股份有限公司 | 一种封装薄膜及其制备方法、光电器件 |
CN109980073B (zh) * | 2017-12-27 | 2021-02-19 | Tcl科技集团股份有限公司 | 一种封装薄膜及其制备方法、光电器件 |
CN113079600A (zh) * | 2020-01-06 | 2021-07-06 | 佛山市顺德区美的电热电器制造有限公司 | 复合材料、电器和制备复合材料的方法 |
CN113079600B (zh) * | 2020-01-06 | 2023-01-24 | 佛山市顺德区美的电热电器制造有限公司 | 复合材料、电器和制备复合材料的方法 |
CN111599934A (zh) * | 2020-05-07 | 2020-08-28 | Tcl华星光电技术有限公司 | 显示面板及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN107097484A (zh) | 2017-08-29 |
EP2668034A2 (en) | 2013-12-04 |
US20140060648A1 (en) | 2014-03-06 |
KR101909310B1 (ko) | 2018-12-19 |
BR112013019014A2 (pt) | 2016-10-04 |
CN103328205B (zh) | 2017-03-08 |
US10522695B2 (en) | 2019-12-31 |
WO2012103390A2 (en) | 2012-08-02 |
WO2012103390A3 (en) | 2012-11-01 |
RU2605560C2 (ru) | 2016-12-20 |
MY161553A (en) | 2017-04-28 |
RU2013137882A (ru) | 2015-03-10 |
AU2012211217B2 (en) | 2016-01-07 |
JP2017047689A (ja) | 2017-03-09 |
EP2668034A4 (en) | 2016-07-06 |
KR20140008516A (ko) | 2014-01-21 |
JP2014511286A (ja) | 2014-05-15 |
JP6096126B2 (ja) | 2017-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103328205A (zh) | 无机多层堆叠件及其相关的制造方法以及组成成分 | |
Lu et al. | A review on encapsulation technology from organic light emitting diodes to organic and perovskite solar cells | |
AU2012211217A1 (en) | An inorganic multilayer stack and methods and compositions relating thereto | |
US9555595B2 (en) | Multi-laminate hermetic barriers and related structures and methods of hermetic sealing | |
US9799854B2 (en) | Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices | |
US10644172B2 (en) | Transparent electrode, manufacturing method thereof and electronic device employing the transparent electrode | |
CN101306589B (zh) | 阻隔膜及元件 | |
JP2002260848A (ja) | 有機el素子に用いるフィルム及び有機el装置 | |
JP2014516455A (ja) | 多層電子デバイス | |
WO2018219154A1 (zh) | 一种封装的钙钛矿太阳能电池组件及其封装方法 | |
RU2636075C2 (ru) | Новаторское многослойное барьерное покрытие, способ его изготовления и композиция | |
CN112701227A (zh) | 一种钙钛矿太阳能电池器件及其封装方法 | |
JP2012207269A (ja) | 透明ガスバリア層の製造方法、透明ガスバリア層、透明ガスバリアフィルム、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池 | |
JP2012211373A (ja) | 透明ガスバリアフィルム、透明ガスバリアフィルムの製造方法、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池 | |
JP2012212577A (ja) | 透明ガスバリア層の製造方法、透明ガスバリア層、透明ガスバリアフィルム、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池 | |
JP2012207268A (ja) | 透明ガスバリア層の製造方法、透明ガスバリア層、透明ガスバリアフィルム、有機エレクトロルミネッセンス素子、太陽電池および薄膜電池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 1189852 Country of ref document: HK |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
REG | Reference to a national code |
Ref country code: HK Ref legal event code: WD Ref document number: 1189852 Country of ref document: HK |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170308 Termination date: 20200127 |
|
CF01 | Termination of patent right due to non-payment of annual fee |