CN103309171B - 产生方法和信息处理设备 - Google Patents

产生方法和信息处理设备 Download PDF

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Publication number
CN103309171B
CN103309171B CN201310076853.9A CN201310076853A CN103309171B CN 103309171 B CN103309171 B CN 103309171B CN 201310076853 A CN201310076853 A CN 201310076853A CN 103309171 B CN103309171 B CN 103309171B
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China
Prior art keywords
pattern
mask pattern
auxiliary patterns
value
conditions
Prior art date
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CN201310076853.9A
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English (en)
Chinese (zh)
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CN103309171A (zh
Inventor
荒井祯
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F18/00—Pattern recognition
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
    • G16Z99/00—Subject matter not provided for in other main groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/32—Circuit design at the digital level
    • G06F30/333—Design for testability [DFT], e.g. scan chain or built-in self-test [BIST]
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Evolutionary Computation (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Artificial Intelligence (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Biology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Processing Or Creating Images (AREA)
  • Architecture (AREA)
  • Software Systems (AREA)
CN201310076853.9A 2012-03-15 2013-03-12 产生方法和信息处理设备 Active CN103309171B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012059103A JP6039910B2 (ja) 2012-03-15 2012-03-15 生成方法、プログラム及び情報処理装置
JP2012-059103 2012-03-15

Publications (2)

Publication Number Publication Date
CN103309171A CN103309171A (zh) 2013-09-18
CN103309171B true CN103309171B (zh) 2016-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310076853.9A Active CN103309171B (zh) 2012-03-15 2013-03-12 产生方法和信息处理设备

Country Status (5)

Country Link
US (1) US8756536B2 (https=)
JP (1) JP6039910B2 (https=)
KR (1) KR101561733B1 (https=)
CN (1) CN103309171B (https=)
TW (1) TWI502287B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
TWI620005B (zh) * 2014-08-18 2018-04-01 聯華電子股份有限公司 佈局圖案分割方法
JP2022523747A (ja) * 2019-01-30 2022-04-26 深▲せん▼晶源信息技術有限公司 図形画像結合最適化のフォトエッチングマスクの最適化方法、装置および電子装置
CN113703290B (zh) * 2021-09-06 2024-05-28 深圳市先地图像科技有限公司 一种激光成像设备以及激光成像控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101013259A (zh) * 2006-02-03 2007-08-08 松下电器产业株式会社 光罩、使用该光罩的图案形成方法及光罩数据生成方法
CN102592002A (zh) * 2010-10-29 2012-07-18 佳能株式会社 产生掩模数据的方法、制造掩模的方法和曝光方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08202020A (ja) * 1995-01-31 1996-08-09 Sony Corp フォトマスクにおけるパターン形状評価方法、フォトマスク、フォトマスクの作製方法、フォトマスクのパターン形成方法、並びに露光方法
JP3406506B2 (ja) * 1997-03-24 2003-05-12 シャープ株式会社 フォトマスクのパターン補正方法およびフォトマスクのパターン補正装置
US6127071A (en) * 1999-06-22 2000-10-03 International Business Machines Corporation Serif mask design for correcting severe corner rounding and line end shortening in lithography
US6562638B1 (en) * 1999-12-30 2003-05-13 Cypress Semiconductor Corp. Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout
US6563566B2 (en) 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
US7107573B2 (en) * 2002-04-23 2006-09-12 Canon Kabushiki Kaisha Method for setting mask pattern and illumination condition
US7001693B2 (en) * 2003-02-28 2006-02-21 International Business Machines Corporation Binary OPC for assist feature layout optimization
WO2004104699A1 (ja) * 2003-05-26 2004-12-02 Fujitsu Limited パターン寸法補正
JP4357287B2 (ja) * 2003-12-18 2009-11-04 株式会社東芝 修正指針の発生方法、パターン作成方法、マスクの製造方法、半導体装置の製造方法及びプログラム
JP4247104B2 (ja) * 2003-12-18 2009-04-02 株式会社東芝 パターン検証方法、パターン検証システム
JP4593236B2 (ja) * 2004-10-29 2010-12-08 株式会社日立ハイテクノロジーズ 寸法計測走査型電子顕微鏡システム並びに回路パターン形状の評価システム及びその方法
JP4592438B2 (ja) * 2005-02-08 2010-12-01 株式会社東芝 半導体集積回路のレイアウト方法、製造方法及びレイアウトプログラム
WO2007010621A1 (ja) 2005-07-22 2007-01-25 Fujitsu Limited フォトマスクパターンデータの作成方法、そのフォトマスクパターンデータを用いて作成されたフォトマスク、及び、そのフォトマスクを用いた半導体装置の製造方法
JP2007140485A (ja) * 2005-10-18 2007-06-07 Sharp Corp シミュレーションにおけるパラメータ抽出装置及びパラメータ抽出方法と、この方法により作成したマスクパターンデータ及びこのマスクパターンデータにより作成したフォトマスクと半導体装置
US7921383B1 (en) * 2006-01-11 2011-04-05 Olambda, Inc Photolithographic process simulation including efficient result computation for multiple process variation values
JP2008033277A (ja) * 2006-06-29 2008-02-14 Sharp Corp 設計データ又はマスクデータの補正方法および補正システム、設計データ又はマスクデータの検証方法および検証システム、半導体集積回路の歩留まり予測方法、デザインルールの改善方法、マスクの製造方法、並びに、半導体集積回路の製造方法
US7886262B2 (en) * 2006-08-15 2011-02-08 Chew Marko P System and method of maximizing integrated circuit manufacturing yield with fabrication process simulation driven layout optimization
US7995832B2 (en) * 2007-01-11 2011-08-09 Kla-Tencor Corporation Photomask inspection and verification by lithography image reconstruction using imaging pupil filters
US8732625B2 (en) * 2007-06-04 2014-05-20 Asml Netherlands B.V. Methods for performing model-based lithography guided layout design
JP2009093138A (ja) 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
EP2040120B1 (en) * 2007-09-19 2011-03-02 Canon Kabushiki Kaisha Mask data generation method, mask fabrication method, exposure method, device fabrication method, and program
JP4402145B2 (ja) * 2007-10-03 2010-01-20 キヤノン株式会社 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP5106220B2 (ja) * 2008-04-10 2012-12-26 キヤノン株式会社 原版データ生成プログラム、原版データ生成方法、照明条件決定プログラム、照明条件決定方法およびデバイス製造方法
JP5300354B2 (ja) * 2008-07-11 2013-09-25 キヤノン株式会社 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
US7901850B2 (en) * 2008-09-01 2011-03-08 D2S, Inc. Method and system for design of a reticle to be manufactured using variable shaped beam lithography
US7799489B2 (en) * 2008-09-01 2010-09-21 D2S, Inc. Method for design and manufacture of a reticle using variable shaped beam lithography
CN101738850B (zh) * 2008-11-27 2011-12-07 中芯国际集成电路制造(上海)有限公司 光学临近修正参数采集方法
US8099684B2 (en) * 2009-01-08 2012-01-17 International Business Machines Corporation Methodology of placing printing assist feature for random mask layout
JP5607308B2 (ja) * 2009-01-09 2014-10-15 キヤノン株式会社 原版データ生成プログラムおよび方法
NL2005523A (en) * 2009-10-28 2011-05-02 Asml Netherlands Bv Selection of optimum patterns in a design layout based on diffraction signature analysis.
US8739079B2 (en) 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method
DE102010030758B4 (de) * 2010-06-30 2018-07-19 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Steuerung kritischer Abmessungen in optischen Abbildungsprozessen für die Halbleiterherstellung durch Extraktion von Abbildungsfehlern auf der Grundlage abbildungsanlagenspezifischer Intensitätsmessungen und Simulationen
WO2012013638A1 (en) * 2010-07-26 2012-02-02 Carl Zeiss Sms Ltd. Lithographic targets for uniformity control
JP5686567B2 (ja) * 2010-10-19 2015-03-18 キヤノン株式会社 露光条件及びマスクパターンを決定するプログラム及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101013259A (zh) * 2006-02-03 2007-08-08 松下电器产业株式会社 光罩、使用该光罩的图案形成方法及光罩数据生成方法
CN102592002A (zh) * 2010-10-29 2012-07-18 佳能株式会社 产生掩模数据的方法、制造掩模的方法和曝光方法

Also Published As

Publication number Publication date
KR101561733B1 (ko) 2015-10-19
KR20130105388A (ko) 2013-09-25
US20130246982A1 (en) 2013-09-19
US8756536B2 (en) 2014-06-17
TW201341972A (zh) 2013-10-16
TWI502287B (zh) 2015-10-01
JP6039910B2 (ja) 2016-12-07
CN103309171A (zh) 2013-09-18
JP2013195440A (ja) 2013-09-30

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