CN1032945C - 半导体发光装置 - Google Patents
半导体发光装置 Download PDFInfo
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- CN1032945C CN1032945C CN94108213.XA CN94108213A CN1032945C CN 1032945 C CN1032945 C CN 1032945C CN 94108213 A CN94108213 A CN 94108213A CN 1032945 C CN1032945 C CN 1032945C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
Abstract
一种半导体发光装置,它具有将电流供给层叠在砷化镓基板1上的半导体层并发光的活性层4,将电流供给有源层4的电极7a和7b,形成在将有源层4发射的光取至外部的取光面与有源层4之间并由ZnTe构成的电流扩散层6,该电流扩散层6对设于取光面侧的电极7a与有源层4间流动的电流进行扩散。上述结构通过抑制电流扩散层中的光吸收可实现高亮度化。
Description
本发明涉及黄绿色—绿色的高亮度半导体发光装置,尤其涉及用作信号机、信息板等的室外显示用的光源的半导体发光装置。
使用铟镓铝磷系四元混晶的超高亮度绿色发光二极管具有如图6剖视图所示的结构。
在图6中,通过掺杂硅,在方向(100)倾斜15°的n型砷化镓基板101上层叠形成由n-砷化镓构成的缓冲层102,然后,通过MOCVD法成长形成有:由形成双异质(DH)结构的n-In0.5(Ga0.3Al0.7)0.5P构成的覆盖层103;由n-In0.5(Ga0.6Al0.4)0.5P构成的有源层104;由P-In0.5(Ga0.3Al0.7)0.5P构成的覆盖层105。又,在覆盖层105上,形成有由P+-Ga0.3Al0.7As构成的、并使注入电流扩散于整个元素而增大发光面积的电流扩散层106。再在电流扩散层106上及砷化镓基板101的背面形成一对给活性层104提供电流的电极107。
在如上结构中,构成电流扩散层106的P-Ga0.3Al0.7As,相对于由有源层104发射的黄绿色—绿色(580nm-560nm)的发光波长带的光不能构成完全透明。即,由有源层104发射的光的20%-40%左右被该电流扩散层106吸收掉。这样,贡献于照明的仅为有源层104可得光中的60%左右,发光效率仅达到0.2%左右。
如上所述,在绿色系的已有发光二极管中,由于电流扩散层对绿色光的透光率极低,所发光的一部分被电流扩散层吸收。这样,引起发光效率下降,构成了高亮度化的障碍。
因此,本发明是鉴于上述情况而完成的,其目的在于通过极大地提高电流扩散层的透光率,提高发光效率,从而提供当然可实现高亮度化的半导体发光装置。
为了达到上述目的,权利要求1所记载的本发明构成如下:使电流供给层叠在半导体基板上的半导体层而发光的发光层;将电流供给发光层的电极;由ZnTe(锌化碲)构成的电流扩散层,该电流扩散层形成在将发光层发射的光取出到外部的取光面与发光层之间,它对设置在取光面侧的电极与发光层之间流动的电流进行扩散。
权利要求2所记载的本发明,其构成为在权利要求1所记载的本发明中,又在设于取光面相反侧的电极与发光层之间设置将发光层发射的光反射到取光面侧的反射层。
权利要求3所记载的本发明,其构成为在权利要求1或2记载的本发明中,又在设置于取光面侧的电极与发光层之间设置有选择性地阻止从设置于取光面侧的电极供给发光层的电流的电流阻挡层。
在如上构成中,本发明不会使由发光层发射到取光面的光在电流扩散层中受到吸收。
下面,用附图说明本发明的实施例。
图1为权利要求1所述发明一实施例的半导体发光装置剖面结构示意图;
图2为形成权利要求1、2或3所述发明一实施例及已有技术例的电流扩散层形成材料透光率示意图;
图3为权利要求1所述发明一实施例及已有技术例相对于发光波长的外部量子效率示意图;
图4为权利要求2所述发明一实施例的半导体发光装置剖面结构示意图;
图5为权利要求3所述发明一实施例的半导体发光装置剖面结构示意图;
图6为已有技术的半导体发光装置的剖面结构示意图。
图1中,在硅掺杂的方向(100)倾斜15°的n型砷化镓基板1上,通过MOCVD法,依次形成:由n-GaAs构成的缓冲层2;硅掺杂的n-In0.5(Ga0.3Al0.7)0.5P构成的0.6μm左右厚的金属覆盖层3;不掺杂的n-In0.5(Ga0.6Al0.4)0.5P构成的0.3μm左右厚的有源层4;Zn掺杂的P-In0.5(Ga0.3Al0.7)0.5P构成的0.6μm左右厚的覆盖层5。
然后,在覆盖层5上生成由掺杂P或N的P-ZnTe(锌化碲)构成的7μm左右厚的电流扩散层6。该电流扩散层6,在生成缓冲层2、金属覆盖层3、5及有源层4时,由MOCVD法连续生成,也可由MBE法、MOMBE法或VPE法生成。这样形成的电流扩散层6的ZnTe做成具有的特性载流子浓度在1×1018cm-3以上,电阻率为0.05Ωcm左右、特别要做成电阻率低。
在此电流扩散层6的上部和GaAs基板1的背面形成一对给活性层4提供电流的电极7a、7b。
在上述结构中,形成电流扩散层6的ZnTe中560nm-590nm波长带的光,其透光率如图2所示,能获得约100%的值,与已有技术用的Ga0.3Al0.7As相比,显然透光率飞跃提高。
因此,从有源层4发射的光,在电流扩散层6中没有被吸收,可发射到外部。这样,例如发光波长为573nm左右的黄绿色及发光波长为565nm左右的绿色,其中的外部量子效率如图3所示,分别从0.4%提高到0.6%和从0.2%提高到0.4%,当然能实现高亮度化。
图4为涉及权利要求2所记发明一实施例的半导体发光装置剖面结构示意图。
图4中所示作为权利要求2所记发明一实施例特征的部分,是相对于图1所示实施例的结构,设有将缓冲层2与金属覆盖层3之间发出的光反射到电流扩散层6的取光面侧的光反射层8。根据这种结构,比图1所示结构增加了可取出的光量,能实现更进一步的高亮度化。
图5为涉及权利要求3所记发明一实施例半导体发光装置剖面结构示意图,其特征是相对于图1结构,在覆盖层5上的取光面侧电极7a的正下方,设有与电极7a大致同一形状的电流阻挡层9。在这种结构中,也能实现高亮度化。
又,本发明不限于上述实施例,例如也可将图4所示结构与图5所示结构组合起来。又,通过改变有源层4的组成,能够在ZnTe可吸收的发光波长的范围内改变发光颜色。而且,对于上述实施例,也可分别将砷化镓基板及各层的导电方式倒置。
综上所述,按照本发明,由于用ZnTe形成对提供给活性层的电流进行扩散的电流扩散层,所以能防止在电流扩散层中吸收发出的光。这样,提高了发光效率,从而能实现更进一步的高亮度化。
Claims (3)
1.一种半导体发光装置,它具有:
将电流供给层叠在半导体基板上的半导体层并发光的发光层;
将电流供给发光层的电极;
其特征在于,
形成在将发光层发射的光取出至外部的取光面与发光层之间,对设于取光面侧的电极与发光层之间流动的电流进行扩散的电流扩散层;
所述电流扩散层由ZnTe构成。
2.如权利要求1所述装置,其特征在于,该装置可进一步包含:在设置于取光面相反一侧的电极与发光层之间,将发光层发射的光反射到取光面侧的反射层。
3.如权利要求1或2所述装置,其特征在于,该装置可进一步包含:在设于取光面侧的电极与发光层之间,用于对由设于取光面侧的电极供给发光层的电流进行有选择性地阻止的阻挡层。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP181224/93 | 1993-07-22 | ||
JP18122493A JPH0738150A (ja) | 1993-07-22 | 1993-07-22 | 半導体発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1099521A CN1099521A (zh) | 1995-03-01 |
CN1032945C true CN1032945C (zh) | 1996-10-02 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN94108213.XA Expired - Lifetime CN1032945C (zh) | 1993-07-22 | 1994-07-22 | 半导体发光装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5506423A (zh) |
JP (1) | JPH0738150A (zh) |
CN (1) | CN1032945C (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
JP3122324B2 (ja) * | 1995-02-20 | 2001-01-09 | 三菱電線工業株式会社 | 半導体発光素子 |
JPH098344A (ja) * | 1995-06-14 | 1997-01-10 | Hitachi Cable Ltd | 発光ダイオード及びその製造方法 |
JPH0936431A (ja) * | 1995-07-13 | 1997-02-07 | Toshiba Corp | 半導体発光素子 |
JP2830903B2 (ja) * | 1995-07-21 | 1998-12-02 | 日本電気株式会社 | 半導体デバイスの製造方法 |
DE19625622A1 (de) * | 1996-06-26 | 1998-01-02 | Siemens Ag | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
US6043509A (en) * | 1996-12-13 | 2000-03-28 | Hitachi Cable, Ltd. | Light-emitting diode having moisture-proof characteristics and high output power |
TW326575B (en) * | 1997-01-18 | 1998-02-11 | Nat Science Council | Structure and fabrication method of the metal-insulator-semiconductor multiple-negative differential resistance |
US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
JP3653384B2 (ja) * | 1998-02-10 | 2005-05-25 | シャープ株式会社 | 発光ダイオードの製造方法 |
DE19926958B4 (de) * | 1999-06-14 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Lichtemissions-Halbleiterdiode auf der Basis von Ga (In, AL) P-Verbindungen mit ZnO-Fensterschicht |
JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP4116260B2 (ja) * | 2001-02-23 | 2008-07-09 | 株式会社東芝 | 半導体発光装置 |
US6777257B2 (en) * | 2002-05-17 | 2004-08-17 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating a light emitting device and light emitting device |
JP3859148B2 (ja) * | 2002-10-31 | 2006-12-20 | 信越半導体株式会社 | Zn系半導体発光素子の製造方法 |
US7416653B2 (en) * | 2003-12-19 | 2008-08-26 | Shell Oil Company | Systems and methods of producing a crude product |
KR100616596B1 (ko) * | 2004-07-09 | 2006-08-28 | 삼성전기주식회사 | 질화물 반도체 소자 및 제조방법 |
JP4367393B2 (ja) * | 2005-09-30 | 2009-11-18 | 日立電線株式会社 | 透明導電膜を備えた半導体発光素子 |
EP2453535B1 (en) * | 2009-07-06 | 2021-05-05 | Furukawa Electric Co., Ltd. | Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device |
KR101616905B1 (ko) * | 2009-10-22 | 2016-04-29 | 엘지디스플레이 주식회사 | 반도체 발광 소자 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5911688A (ja) * | 1982-07-12 | 1984-01-21 | Sanyo Electric Co Ltd | 青色発光素子 |
US5274248A (en) * | 1991-06-05 | 1993-12-28 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device with II-VI compounds |
US5300791A (en) * | 1992-09-29 | 1994-04-05 | Industrial Technology Research Institute | Light emitting diode |
-
1993
- 1993-07-22 JP JP18122493A patent/JPH0738150A/ja active Pending
-
1994
- 1994-07-14 US US08/274,842 patent/US5506423A/en not_active Expired - Lifetime
- 1994-07-22 CN CN94108213.XA patent/CN1032945C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0738150A (ja) | 1995-02-07 |
CN1099521A (zh) | 1995-03-01 |
US5506423A (en) | 1996-04-09 |
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