CN103247734A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
CN103247734A
CN103247734A CN2013100520618A CN201310052061A CN103247734A CN 103247734 A CN103247734 A CN 103247734A CN 2013100520618 A CN2013100520618 A CN 2013100520618A CN 201310052061 A CN201310052061 A CN 201310052061A CN 103247734 A CN103247734 A CN 103247734A
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electrode
polarity
point
light
distance
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CN103247734B (en
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神谷真央
柏本启佑
斋藤仁美
野田尚伸
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body

Abstract

A semiconductor light emitting device includes: a first conductivity type semiconductor layer; a light emission layer; a second conductivity type semiconductor layer; a conductive portion of a first polarity electrically connected to the first conductivity type semiconductor layer; and a conductive portion of a second polarity electrically connected to the second conductivity type semiconductor layer. At least one of the conductive portion of the first polarity and the conductive portion of the second polarity includes a plurality of separated electrode portions arranged on a light emission surface. The closer the positions of the separated electrode portions are to a center point of the light emission surface, the separated electrode portions are provided sparsely, and the farther the positions of the separated electrode portions are from a center point of the light emission surface, the separated electrode portions are provided densely.

Description

Light emitting semiconductor device
Technical field
The present invention relates to a kind of light emitting semiconductor device.More specifically, the present invention relates to a kind of light emitting semiconductor device with luminous quantity of raising.
Background technology
In light emitting semiconductor device, preferably the Luminance Distribution on the light-emitting area of luminescent layer is uniform.When the current density on the light-emitting area of semiconductor layer was inhomogeneous, the local deterioration development of flowing at big electric current was rapid.And the current density on light-emitting area is more even, and the light of launching from light emitting semiconductor device becomes more bright.
Therefore, developed the even brightness technology that makes on the light-emitting area.For example, patent documentation 1 discloses a kind of light emitting semiconductor device, and it comprises the electrode (referring to Patent Document [0050] section and Fig. 2 of 1) of the linear segment with the equal intervals place that is arranged in chip surface.Electrode is formed on the whole area of chip surface.Correspondingly, formed between lineation electrode respect to one another luminous abreast a plurality of luminous components, thus and the light-emitting area of light emitting semiconductor device luminous (referring to Patent Document [0052] section of 1) equably.
And, also disclose and wherein be provided with for light emitting semiconductor device from a plurality of loops of electric power to electrode that present (referring to Patent Document Figure 23 and Figure 24 of 1).
Patent documentation 1:JP-A-2002-319705
Summary of the invention
Yet, even when arranging electrode and loop as mentioned above, still stayed near the light-emitting area the brightest fact heart therein.Reason is that electric current is easy to concentrate near the center.That is to say that current density is bigger near the center of light-emitting area.
Made the present invention and solved top problem, its objective is provides a kind of luminous quantity uniform light emitting semiconductor device on light-emitting area.
Light emitting semiconductor device according to first aspect comprises: first conductive-type semiconductor layer; Luminescent layer; Second conductive-type semiconductor layer; The current-carrying part of first polarity, it is connected electrically to first conductive-type semiconductor layer; And the current-carrying part of second polarity, it is connected electrically to second conductive-type semiconductor layer.One of at least comprise a plurality of electrode parts of separating that are arranged on the light-emitting area in the current-carrying part of the current-carrying part of first polarity and second polarity.Near the central point of light-emitting area, the electrode that separates part is sparsely arranged in the position of electrode part separately, and away from the central point of light-emitting area, the electrode that separates part is arranged thick and fast in the position of the electrode part of separating.
First conductive-type semiconductor layer is p-type semiconductor layer or n-type semiconductor layer.Second conductive-type semiconductor layer is p-type semiconductor layer or n-type semiconductor layer, but for having the semiconductor layer of the conduction type that is different from first conductive-type semiconductor layer.First polarity is negative or positive electrode.Second polarity is the negative or positive electrode that is different from first polarity.Current-carrying part comprises point electrode, wiring and flat tip electrode.
In light emitting semiconductor device, the electrode that separates of feed part is compared the peripheral part that is arranged in light-emitting area more with core.Therefore, with traditional light emitting semiconductor device comparison, electric current is easier to flow at peripheral part of light-emitting area.Thereby, distributing relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In the light emitting semiconductor device according to second aspect, a plurality of electrodes that separate partly comprise: the electrode part of opening in first minute; And the electrode part of opening in second minute, the electrode of opening in second minute partly is positioned at than the position of the first electrode part of separating further from central point.Second electrode that separates partly comprises the electrode part that has less than the second nearest interelectrode distance of the first nearest interelectrode distance of the electrode part of opening in first minute.Recently interelectrode distance is the distance between the current-carrying part of second polarity of the current-carrying part of first polarity of separately electrode part and the most close electrode part of separating or the most close electrode part of separating.Correspondingly, with traditional light emitting semiconductor device relatively, stayed electric current and be easier to the fact that flows at the peripheral part at light-emitting area.Therefore, distribute relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In the light emitting semiconductor device according to the third aspect, the distance between the electrode that the separates part that nearest interelectrode distance is first polarity and the current-carrying part of second polarity.Because part is narrower around for the distance between the current-carrying part of the electrode that separates of first polarity part and second polarity (it comprises electrode part separately, wiring, flat tip electrode etc.), so distribute relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In the light emitting semiconductor device according to fourth aspect, each in the current-carrying part of the current-carrying part of first polarity and second polarity includes a plurality of electrode parts of separating.Distance between the electrode that the separates part of the electrode that the separates part of the current-carrying part that nearest interelectrode distance is first polarity and the current-carrying part of second polarity.Because part is narrower around for the distance between the electrode that the separates part of the electrode that separates of first polarity part and second polarity, therefore the luminous intensity with traditional light emitting semiconductor device distributes relatively, and the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In according to the light emitting semiconductor device aspect the 5th, only the current-carrying part of first polarity comprises a plurality of electrode parts of separating.Distance between the electrode that the separates part of the current-carrying part that nearest interelectrode distance is first polarity and the current-carrying part of second polarity.In this case, the current-carrying part of second polarity does not have electrode part separately.Therefore, part is narrower around for the distance between the current-carrying part (it comprises wiring, flat tip electrode etc.) of the electrode that separates of first polarity part and second polarity.Therefore, distribute relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity that distributes at the light-emitting area of light emitting semiconductor device is more even.
In according to the light emitting semiconductor device aspect the 6th, the current-carrying part of first polarity comprises the pectination wiring portion of first polarity that the electrode that the separates part that makes first polarity is electrically connected each other.The current-carrying part of second polarity comprises the pectination wiring portion of second polarity that the electrode that the separates part that makes second polarity is electrically connected each other.More away from the central point of light-emitting area, make the distance between the electrode that the separates part of pectination wiring portion of the electrode that separates part on the pectination wiring portion of the polarity of winning and second polarity more narrow.Therefore, distribute relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In according to the light emitting semiconductor device aspect the 7th, the current-carrying part of first polarity comprises the pectination wiring portion of first polarity with pectination shape of the electrode part that is electrically connected separately.The current-carrying part of second polarity comprises the comb electrode part of second polarity with pectination shape.Recently interelectrode distance is the distance that is connected between the comb electrode part of the electrode that the separates part of first polarity of pectination wiring portion of first polarity and second polarity.More away from the central point of light-emitting area, make the distance between the comb electrode part of the electrode that the separates part of pectination wiring portion of the polarity of winning and second polarity more narrow.Therefore, distribute relatively with the luminous intensity of traditional light emitting semiconductor device, the luminous intensity on the light-emitting area of light emitting semiconductor device distributes more even.
In the light emitting semiconductor device according to eight aspect, ratio b/a is in the scope of 1.05≤b/a≤1.45, wherein, " a " expression is in the electrode that separates on central point first circuit farthest of light-emitting area part and be only second to nearest interelectrode distance between the electrode that the separates part of first circuit on central point second circuit farthest of light-emitting area, and " b " expression is in the electrode that the separates part on the tertiary circuit of the central point of close light-emitting area be only second to the nearest interelectrode distance between the electrode that the separates part of the 4th circuit of the central point of close light-emitting area of tertiary circuit.Luminous intensity in light-emitting area distributes and becomes more even.
In according to the light emitting semiconductor device aspect the 9th, interelectrode distance b and the ratio b/a of nearest interelectrode distance a are in the scope of 1.15≤b/a≤1.35 recently.Luminous intensity in light-emitting area distributes and becomes more even.
According to the light emitting semiconductor device of the tenth aspect, the current-carrying part of first polarity comprises the electrode part of separating of first polarity.Distance between the electrode that the separates part that nearest interelectrode distance is first polarity.Reason is as follows: still in the flip-chip of the plane electrode part with flat shape, part is narrower around to make distance between the electrode that the separates part of identical polarity, makes luminous intensity in light-emitting area distribute and becomes more even.
According to the present invention, be provided with a kind of luminous quantity uniform light emitting semiconductor device on light-emitting area.
Description of drawings
Fig. 1 is for being used for diagram according to the plane graph of the luminescent device of first exemplary embodiment;
Fig. 2 is for being used for diagram according to the schematic configuration view of the structure of the luminescent device of first exemplary embodiment;
Fig. 3 is for being used for diagram according to the view of the position of the point electrode of the luminescent device of first exemplary embodiment;
Fig. 4 be view according to the method for testing of the luminescent device execution of first exemplary embodiment for being used for diagram;
Fig. 5 is the curve chart that is depicted as the result of the test of carrying out according to the luminescent device of first exemplary embodiment;
Fig. 6 is for being used for diagram according to the view of the position of the point electrode of the luminescent device of second exemplary embodiment;
Fig. 7 is for being used for diagram according to the illustrative configurations view of the structure of the luminescent device of second exemplary embodiment;
Fig. 8 is for being used for diagram according to the view of the position of the point electrode of the luminescent device of the 3rd exemplary embodiment;
Fig. 9 is for being used for diagram according to the illustrative configurations view of the structure of the luminescent device of the 3rd exemplary embodiment;
Figure 10 is for being used for diagram according to the perspective view of the structure of the luminescent device of the 4th exemplary embodiment;
Figure 11 is for being used for diagram according to the illustrative configurations view of the structure of the luminescent device of the 4th exemplary embodiment;
Figure 12 is for being used for diagram according to the view of the position of the point electrode of the luminescent device of the 4th exemplary embodiment; And
Figure 13 is for being used for diagram according to the view of the position of the point electrode of the luminescent device of the 5th exemplary embodiment.
Embodiment
Hereinafter, will describe certain exemplary embodiments of the present invention by reference to the accompanying drawings, illustrate light emitting semiconductor device simultaneously.Yet, the invention is not restricted to exemplary embodiment.That is to say that the present invention can be applied to p auxiliary electrode and at least a portion in the n auxiliary electrode and open the luminescent device that (separation) arrange.And the electrode structure of the stacked structure of each layer that will describe and luminescent device is only for exemplary below.The stacked structure whether stacked structure is different from exemplary embodiment is inessential.In each accompanying drawing, show every layer thickness conceptually and do not indicate actual (real) thickness.
[first exemplary embodiment]
1. light emitting semiconductor device
The light emitting semiconductor device of this exemplary embodiment has been described.Fig. 1 is for extracting the plane graph of the luminescent device 100 of this exemplary embodiment of seeing on the surface from light.In order to understand electrode structure, each electrode and wiring are shown as visible.Luminescent device 100 is towards the mo(u)ld top half luminescent device.P flat tip electrode (pad electrode) PX and n flat tip electrode NX are arranged on the light that is present in p-type layer side and extract on the surface.That is to say that p flat tip electrode PX and n flat tip electrode NX are arranged such that they are exposed to the surface of p-type layer side.
As shown in Figure 1, a plurality of p point electrodes (PC11 etc.) and a plurality of n point electrode (NL11 etc.) are by on the surface of the luminescent device 100 in this exemplary embodiment arranged apart.And for example, p point electrode (PC11 etc.) and n point electrode (NL11 etc.) cross sectional shape in the cross section that is parallel to light extraction surface is for circular.Yet cross sectional shape can be polygon.It also may be other shape.
P point electrode (PC11 etc.) is connected electrically to p flat tip electrode PX via p wiring (PK1 etc.).P point electrode (PC11 etc.) and p wiring (PK1 etc.) are for being used for being electrically connected the p auxiliary electrode of p-type layer and p flat tip electrode PX.The p point electrode is for being arranged in the electrode part of separating of the positive pole on the light-emitting area dividually.That is to say that the p auxiliary electrode has electrode part (p point electrode) and wiring (p wiring) separately.That is to say that at least a portion p auxiliary electrode has electrode part separately.
N point electrode (NL11 etc.) is connected electrically to n flat tip electrode NX via n wiring (NK1 etc.).N point electrode (NL11 etc.) and n wiring (NK1 etc.) are for being used for being electrically connected the n auxiliary electrode of n-type layer and n flat tip electrode NX.The n point electrode is the electrode part of separating of the negative pole on light-emitting area arranged apart.That is to say that the n auxiliary electrode has electrode part (n point electrode) and wiring (n wiring) separately.That is to say that at least a portion n auxiliary electrode has electrode part separately.
As shown in Figure 1, p wiring PK1, PK2, PK3 are the pectination p wiring portion with pectination shape.The n NK1 that connects up, NK2 are also for having the pectination n wiring portion of pectination shape.The pectination n wiring portion of the pectination p wiring portion of three lines that are made of p wiring PK1, PK2, PK3 and two lines being made of n wiring NK1, NK2 is arranged such that each line be engaged with each other (engage).P point electrode (PL11 etc.) along the line of the pectination p wiring portion of p wiring with linear layout.N point electrode (NL11 etc.) along the line of the pectination n wiring portion of n wiring with linear layout.
P wiring PK1 is electrically connected p point electrode PC11, PC12 each other, and also p point electrode PC11, PC12 and p flat tip electrode PX is electrically connected.And for other p wiring PK2, PK3, the p wiring is electrically connected the p point electrode each other and also the p point electrode is connected with p flat tip electrode PX.N wiring NK1 is electrically connected n point electrode NL11, NL12, NL13 each other, and also n point electrode NL11, NL12, NL13 and n flat tip electrode NX is electrically connected.Still for n wiring NK2, the n wiring is electrically connected the n point electrode each other and connects the n point electrode and n flat tip electrode NX.
The p zone that the p point electrode is disposed in core with and the 2nd p zone and the 3rd p zone of both sides in.In a p zone, p point electrode PC11, PC12 are with linear layout.In the 2nd p zone, p point electrode PL11, PL12, PL13, PL14 are with linear layout.In the 3rd p zone, p point electrode PR11, PR12, PR13, PR14 are with linear layout.The p point electrode is represented jointly with PD.
The n point electrode is disposed in n zone and the 2nd n zone.In a n zone, n point electrode NL11, NL12, NL13 are with linear layout.In the 2nd n zone, n point electrode NR11, NR12, NR13 is with linear layout.The n point electrode is represented jointly with ND.
Simultaneously, as shown in Figure 1, a n zone is disposed between p zone and the 2nd p zone.And the 2nd n zone is disposed between p zone and the 3rd p zone.
Fig. 2 is the view that illustrates along the cross section structure of the luminescent device 100 of the line J1-J1 of Fig. 1 intercepting.In Fig. 2, the p point electrode PC11 shown in Fig. 1, PC12, PL11, PL12, PL13, PL14, PR11, PR12, PR13, PR14 represent jointly with p point electrode PD.Equally, n point electrode NL11 shown in Figure 1, NL12, NL13, NR11, NR12, NR13 represent jointly with n point electrode ND.
Luminescent device 100 has sapphire substrates 10, semiconductor layer 20, nesa coating 40, insulating barrier 50, insulating barrier 60, p point electrode PD, p wiring PK, p flat tip electrode PX, n point electrode ND, n wiring NK and n flat tip electrode NX.
The stack layer of semiconductor layer 20 for being made by the GaN base semiconductor.Semiconductor layer 20 has n-type layer, luminescent layer and p-type layer.N-type layer has n-type contact layer, the layer of anti-electrostatic potential the and n-type coating.Luminescent layer is between p-type layer and n-type layer.Luminescent layer is the mqw layer that InGaN layer and AlGaN layer repeatedly pile up.And, the layer that luminescent layer can repeatedly pile up for GaN layer and AlGaN layer.It also may be other mqw layer.And luminescent layer can be the SQW layer.P-type layer has p-type coating and p-type contact layer.As semiconductor layer 20, for example understood the GaN base semiconductor.Yet, the invention is not restricted to this.That is to say, can also be the III group-III nitride semiconductor outside the GaN base semiconductor.And, can be other semiconductor.
Nesa coating 40 is the conductive layer of the p-type contact layer of contact semiconductor layer 20.Nesa coating 40 is made by ITO.In addition, can also use ICO, IZO, ZnO, TiO 2, NbTiO 2, TaTiO 2Deng.The hyaline membrane of insulating barrier 50,60 for being made by insulating material.For example, can use SiO 2In addition, also can adopt other insulation and transparent material.
Herein, p point electrode PD is formed direct contact nesa coating 40.P point electrode PD is connected electrically to p wiring PK.Like this, the p-type contact layer of semiconductor layer 20 is connected electrically to p flat tip electrode PX via nesa coating 40, p point electrode PD and p wiring PK.N point electrode ND is formed directly on the n-type contact layer of semiconductor layer 20.For this reason, a part of n-type contact layer exposes, and n point electrode ND is formed on the place of exposure.N point electrode ND is connected electrically to n wiring NK.Like this, the n-type contact layer of semiconductor layer 20 is connected electrically to n flat tip electrode NX via n point electrode ND and n wiring NK.
Simultaneously, p point electrode PD and n point electrode are for example made by Ni/Au/Al.And p wiring PK and n wiring NK can be made by identical materials.P flat tip electrode PX and n flat tip electrode NX also can be made by identical materials.
As depicted in figs. 1 and 2, p flat tip electrode PX and n flat tip electrode NX expose from diaphragm.Therefore, p flat tip electrode PX can integrate with the p wiring.N flat tip electrode NX can integrate with the n wiring.In fact, Fig. 1 and 2 illustrates them and is integrated.
As mentioned above, p point electrode PD, p wiring PK and p flat tip electrode PX are electrically connected each other.They are connected electrically to p-type contact layer via nesa coating 40.Correspondingly, p point electrode PD, p wiring PK and p flat tip electrode PX dispose the current-carrying part of first polarity.
Simultaneously, n point electrode ND, n wiring NK and n flat tip electrode NX are electrically connected each other.They are connected electrically to n-type contact layer.Correspondingly, n point electrode ND, n wiring NK and n flat tip electrode NX dispose the current-carrying part of second polarity.
Simultaneously, owing to first polarity and second polarity define for convenience, so polarity can be opposite.That is to say that when n point electrode ND, n wiring NK and n flat tip electrode NX were defined as the current-carrying part of first polarity, p point electrode PD, p wiring PK and p flat tip electrode PX disposed the current-carrying part of second polarity.
2. point electrode
2-1. the position of point electrode
Fig. 3 illustrates the floor plan of p point electrode PD and n point electrode ND.As shown in Figure 3, line L1, L2, L3, L4, L5 are parallel to each other.Line L3 is arranged in luminescent device 100 binary positions.In Fig. 3, some O is arranged on the center of the light-emitting area of luminescent device 100.An O is shown imaginaryly.That is to say that in fact, luminescent device 100 does not have set-point O.
On the online L1, p point electrode PL11, PL12, PL13, PL14 are arranged at equal intervals D1 place with linear.On the online L2, n point electrode NL11, NL12, NL13 are arranged at equal intervals D2 place with linear.On the online L3, p point electrode PC11, PC12 are arranged at equal intervals D1 place with linear.Herein, interval D 1 is identical with interval D 2.
The INTRM intermediate point (halfway point) of some O between p point electrode PC11 and p point electrode PC12 located.Position on n point electrode NL11, the online direction of NL12 is identical with the position on the online direction of some O.That is to say, with the position of the INTRM intermediate point on the line direction between linear each p point electrode of arranging at equal intervals D1 place with identical with the position of linear n point electrode on the line direction of equal intervals D2 place layout.Line L4 and line L2 are about the line L3 symmetry as symmetry axis.Line L5 and line L1 are about the line L3 symmetry as symmetry axis.
2-2. distance between point electrode
Distance between point electrode has been described herein.In this exemplary embodiment, distance means the distance between the point electrode with different polarity between point electrode, that is, and and nearest interelectrode distance.That is to say that distance is the electrode that separates of p auxiliary electrode part (each p point electrode PD) and the electrode that the separates distance between (each n point electrode ND) partly of the n auxiliary electrode of the electrode that the separates part of close correspondence between point electrode.
Distance is a1 between the point electrode between the n point electrode NL11 of p point electrode PL11 and the most close p point electrode PL11.Equally, arrange that p point electrode PL11, PL12, PL13, PL14 and the online L2 of layout on the online L1 goes up and the n point electrode NL11 of the most close corresponding p point electrode, the point electrode between NL12, the NL13 between distance be a1.
Distance is b1 between the point electrode between the n point electrode NL11 of p point electrode PC11 and the most close p point electrode PC11.Equally, arrange the p point electrode PC11 on the online L3, PC12 and arrange that online L2 goes up and the n point electrode NL11 of the most close corresponding p point electrode, the point electrode between NL12, the NL13 between distance be b1.
2-3. wire spacing
Wire spacing has been described herein.Line L1 is from an O first line farthest.Line L2 is only second to line L1 from an O second line farthest.Line L3 is the 3rd line of the most close some O.Line L2 is also for being only second to the 4th line of the most close some O of line L.That is to say, line L2 serve as second line and the 4th line the two.
In this exemplary embodiment, the distance A between line L1 and the line L2 less than between line L2 and the line L3 apart from B.Therefore, between point electrode apart from a1 less than between point electrode apart from b1.That is to say, away from the line of the central point O of luminescent device 100 with the distance between the line of the line of close correspondence is less.
Away from the point electrode of the line of the central point O of luminescent device 100, distance is more little between point electrode for more.On the contrary, for the point electrode from the central point O of luminescent device 100 line close to more, distance is more big between point electrode.That is to say that more away from the central point O of luminescent device 100, electrode is by intensive setting.Therefore, more away from the central point O of luminescent device 100, it is more high that point electrode density becomes.On the contrary, the closer to the central point O of luminescent device 100, it is more low that point electrode density becomes.
Therefore, for example, p point electrode PC11 and n point electrode NL11, NL12 forms isosceles triangle.The length at its end is that D2 and its height are apart from B.Simultaneously, n point electrode NL11 and p point electrode PL11, PL12 form isosceles triangle.The length at its end is that D1 and its height are distance A.The end of isosceles triangle identical (D1=D2).The high difference of isosceles triangle.
As mentioned above, in luminescent device 100, at loosely set-point, the position electrode of the central point O of more close light-emitting area, and at the set-point electrode thick and fast further from the position of the central point O of light-emitting area.
3. distance and luminous trend between point electrode
3-1. current density
The luminous trend of luminescent device 100 depends on the distribution of current density on light-emitting area.Thereby, current density is at first described.Illustrate current path between n point electrode NL11 and the p point electrode PC11 herein.Electronics is injected into n-type contact layer from n point electrode NL11 and along continuous straight runs (light-emitting area direction) is diffused into n-type contact layer, and a part of electronics vertically (perpendicular to the direction of light-emitting area) flow.That is to say that vertically the electronics of Liu Donging arrives p point electrode PC11 via luminescent layer, p-type contact layer and nesa coating 40.
Therefore, current density depends on the impedance of electronics along continuous straight runs, that is, and and the resistance of n-type contact layer and nesa coating 40.Thereby the distance between n point electrode (NL11 etc.) and the p point electrode (PL11 etc.) is more near, and electric current more is easy to flow.
3-2. the luminous trend in traditional luminescent device
Simultaneously, according to the conventional semiconductors luminescent device, the core of luminescent device is brighter and its peripheral part is compared secretly with core.Reason is that the electric current that flows in luminescent device concentrates on core and is difficult to flow to the trend of peripheral part.This trend is because electric current is difficult to fully to be diffused into the light-emitting area of luminescent layer causes.Therefore, developed the technology that makes electric current can flow to peripheral part by point electrode.Yet, stayed the trend that electric current is easy to concentrate on core.
3-3. the luminous trend in the luminescent device of this exemplary embodiment
Correspondingly, when making that electric current can easily partly flow around, can be implemented in the uniform substantially luminous trend on the light-emitting area.That is to say, in the luminescent device 100 of this exemplary embodiment, can make electric current easily around part flow, thereby making that the light emission of central part office output of light-emitting area is basic launches identical with the light of peripheral part.
3-4. the control to luminous trend
Can control the luminous trend of luminescent device 100 by the position that corresponding point electrode is set.By adjusting distance between point electrode, can adjust resistance.By suitably selecting interelectrode distance, can be so that current density be even in the plane of luminescent layer.
4. test
4-1. method of testing
Below, the test of luminescent device 100 of this exemplary embodiment having been carried out has been described.In this test, when changing between the point electrode of Fig. 3 apart from a1, b1, measured the brightness of luminescent device 100 etc.
Particularly, as shown in Figure 4, adjust distance between point electrode by the ratio apart from B between the distance A between change line L1 and the line L2 and line L2 and the line L3.Can use a1 and b1 to represent distance A and B herein.That is to say the mathematical expression below satisfying.
A=a1×cos （θ1）
B=b1×cos （θ2）
Herein, angle θ 1 angle that the line that connects n point electrode NL12 and p point electrode PL12 and line L6 form of serving as reasons.Angle θ 2 angle that the line that connects n point electrode NL12 and p point electrode PC11 and line L6 form of serving as reasons.Line L6 is the line that passes p point electrode PC11 and p point electrode PL12.
In test, measure brightness etc. with the B/A with following three values.Corresponding relation between B/A and the b1/a1 is as follows.
Figure BDA00002837209100111
Luminous intensity is measured at place X in Fig. 4 and Y place.Place X is the INTRM intermediate point of line L1 and L2 and is positioned on the line L7.Place Y is the INTRM intermediate point of line L2 and L3 and is positioned on the line L7.Simultaneously, line L7 is the line of tie point O and n point electrode NL12.Like this, place X is positioned in the position more outside than place Y.
Therefore, when changing B/A, place X indicates different in theory positions with place Y.For example, place X and place Y indication when B/A be 1 and diverse location when B/A is 2.Like this, cause depart from (horizontal direction among Fig. 4) of measuring the place.Yet this only is to illustrate for example with some indication place X and place Y.Following test value is the actual mean value of the peripheral region of place X and place Y.Therefore, can not produce owing to depart from the problem that causes.
Herein, the strength ratio of luminous intensity (Y/X) indication is based on the luminous intensity at the Y place, place of the luminous intensity at place X place.
4-2. test result 1
Table 1 indication is when the ratio of the luminous intensity of ratio (b1/a1) when being changed of die opening.As shown in table 1, when B/A was 1.4, strength ratio (Y/X) was approximately 1.That is to say, the luminous intensity fundamental form at the luminous intensity at place X place and place Y place with.
[table 1]
B/A b1/a1 Strength ratio (Y/X)
1 1.00 1.14
1.4 1.27 0.97
2 1.61 0.81
When the ratio (b1/a1) of distance between point electrode was 1, luminous strength ratio was 1.14.That is to say that the luminous strength ratio of the central part office in light-emitting area is the luminous intensity height of part around.
When the ratio (b1/a1) of distance between point electrode was 1.27, luminous strength ratio was 0.97.That is to say, basic identical in the luminous intensity at the luminous intensity at place X place and place Y place.That is to say that luminous intensity is even substantially in light-emitting area.
When the ratio (b1/a1) of distance between point electrode was 1.61, luminous strength ratio was 0.81.That is to say that the luminous intensity of luminous strength ratio peripheral part of the central part office in light-emitting area is low.
Fig. 5 illustrates the ratio (b1/a1) of distance between point electrode and at the curve chart of the strength ratio of the luminous intensity at place X place and Y place.The trunnion axis of Fig. 5 is represented the ratio (b1/a1) of distance between point electrode.The vertical axis of Fig. 5 is represented the strength ratio (Y/X) of luminous intensity.Line L is the line of interpolation (interpolate) measured value.
As shown in Figure 5, the ratio (b1/a1) of distance is more big between point electrode, and the strength ratio of luminous intensity (Y/X) becomes more little.That is to say, when make between point electrode distance outside side hour, the luminous intensity of peripheral part trends towards higher.
Shown in the line L in using Fig. 5, the ratio of distance and the strength ratio of luminous intensity have linear relationship between point electrode.When making between point electrode distance along with position point of distance O and more hour, stay the high trend of luminous intensity of the luminous strength ratio core of peripheral part more.
Herein, when the ratio (b1/a1) of distance between point electrode 1.05 or bigger and 1.45 or littler scope in the time, luminous strength ratio is in 1.0 ± 10% scope.That is to say, express scope by following mathematical expression.
1.05≤b1/a1≤1.45
This is with the scope shown in the Z1 among Fig. 5.At this moment, produce at light-emitting area slight inhomogeneous luminous.
When the ratio (b1/a1) of distance between point electrode 1.15 or bigger and 1.35 or littler scope in the time, luminous strength ratio is in 1.0 ± 5% scope.That is to say, express scope with following mathematical expression.
1.15≤b1/a1≤1.35
This is with the scope shown in the Z2 among Fig. 5.At this moment, produce slight uniformly light-emitting at light-emitting area.
According to Fig. 5, when the ratio (b1/a1) of distance between point electrode is 1.25, looks and realized more uniform luminance.
4-3. test result 2
Table 2 expression when interelectrode distance than (b1/a1) the total radiant flux Po when being changed.As shown in table 2, when interelectrode distance was 1.00 than (b1/a1), total radiant flux Po was 144.9mW.When the ratio (b1/a1) of interelectrode distance was 1.27, total radiant flux Po was 146.7mW.When the ratio (b1/a1) of interelectrode distance was 1.61, total radiant flux Po was 146.2mW.
[table 2]
B/A b1/a1 Total radiant flux Po(mW)
1 1.00 144.9
1.4 1.27 146.7
2 1.61 146.2
Like this, when the ratio (b1/a1) of interelectrode distance be 1.05 or bigger and 1.70 or more hour, the luminous brightness of luminescent device 100 is brighter.Especially, when the ratio (b1/a1) of interelectrode distance is 1.25 or bigger and 1.65 or more hour, obtain preferred result.
5. sum up
As above mask body is described, and according to the luminescent device 100 of this exemplary embodiment, more away from the central point O of light-emitting area, distance becomes more narrow between point electrode.That is to say that more away from the central point O of light-emitting area, it is more high that electrode density becomes.On the contrary, the closer to the central point O of light-emitting area, distance becomes more wide between point electrode.That is to say that the closer to the central point O of light-emitting area, it is more low that electrode density becomes.Therefore, the resistance between the electrode of peripheral part of light-emitting area is lower than the resistance of the electrode of central part office.Thereby, realized even brightness luminescent device 100 on light-emitting area.
Luminous substantially uniformly owing to having realized at light-emitting area, so the luminous output of luminescent device 100 is higher.And, can prevent near the center O of luminescent device 100 deterioration fast.
Simultaneously, this exemplary embodiment only is exemplary.Thereby, can under the situation that does not break away from its main idea, make various modifications and variations.In this exemplary embodiment, the p point electrode is arranged on three lines and the n point electrode is arranged on two lines.Yet, the invention is not restricted to this.And, not to necessarily require these lines to arrange linearly.
[second exemplary embodiment]
Second exemplary embodiment is described.The luminescent device 200 of this exemplary embodiment shown in Fig. 6.Luminescent device 200 is different from the luminescent device 100 of first exemplary embodiment with regard to electrode.Other configuration of luminescent device 200 is identical with the configuration of the luminescent device 100 of first exemplary embodiment.Luminescent device 200 does not arrange the p point electrode.The p auxiliary electrode directly is set on the p-type contact layer 40.Instead, as shown in Figure 6, luminescent device 200 is provided with p wiring PK21, PK22, PK23.Thereby, omit the description common with first exemplary embodiment.
1. light emitting semiconductor device
Fig. 7 is the view along the cross section structure of the luminescent device 200 of the line J2-J2 intercepting of Fig. 6.Luminescent device 200 has sapphire substrates 10, semiconductor layer 20, nesa coating 40, insulating barrier 50, insulating barrier 60, p wiring PK, p flat tip electrode PX, n point electrode ND, n wiring NK and n flat tip electrode NX.
P wiring PK is p wiring PK21, the PK22 with Fig. 6, the pectination p electrode part of PK23.The p wiring is set to contact nesa coating 40.That is to say that p wiring PL21, PK22, PK23 directly contact nesa coating 40.N wiring NK1, NK2 are the pectination n wiring portion with pectination shape.
2. the layout of point electrode
The position of layout points electrode is described subsequently.N point electrode NL11, NL12, NL13 are arranged in the position of comparing more close p wiring PK22 with p wiring PK21.N point electrode NR11, NR12, NR13 also are arranged in the position of comparing more close p wiring PK23 with p wiring PK21.
Distance between n point electrode NL12 and the p wiring PK22 is a2, as shown in Figure 6.Distance between n point electrode NL11 or NL13 and the p wiring PK22 also is a2.
Distance between n point electrode NL12 and the p wiring PK21 is b2, as shown in Figure 6.Distance between n point electrode NL11 or NL13 and the p wiring PK21 also is b2.
Interelectrode distance a2, b2 have following relation of plane recently.
a2<b2 （1）
In this exemplary embodiment, interelectrode distance is the distance between n point electrode and the p wiring recently.As illustrating with mathematical expression (1), more away from the central point O of luminescent device 200, interelectrode distance becomes more little recently.That is to say that more away from the central point O of luminescent device 200, it is more high that electrode density becomes.On the other hand, the closer to the central point O of luminescent device 200, interelectrode distance becomes more big recently.That is to say that the closer to the central point O of luminescent device 200, it is more low that electrode density becomes.
As mentioned above, in luminescent device 200, the point electrode loosely is arranged on the position of the central point O of more close light-emitting area, and point electrode is arranged on thick and fast further from the position of the central point O of light-emitting area.
Therefore, as the luminescent device 100 of first exemplary embodiment, electric current is easy to flow to peripheral part of the luminescent device 200 of this exemplary embodiment.That is to say that luminescent device 200 is launched light substantially equably in light-emitting area.
3. sum up
As above mask body is described, and according to the luminescent device 200 of this exemplary embodiment, more away from the central point O of light-emitting area, distance becomes more narrow between point electrode.That is to say that more away from the central point O of light-emitting area, it is more high that electrode density becomes.On the contrary, the closer to the central point O of light-emitting area, distance becomes more wide between point electrode.That is to say that the closer to the central point O of light-emitting area, it is more low that electrode density becomes.Therefore, the resistance between the electrode of peripheral part of light-emitting area is lower than the resistance between the electrode of central part office.Thereby, realized making even brightness luminescent device 200 on light-emitting area.
Luminous substantially uniformly owing to having realized at light-emitting area, the luminous output of luminescent device 200 is higher.And, can prevent the quick deterioration of near zone of the center O of luminescent device 200.
Simultaneously, this exemplary embodiment only is exemplary.Thereby, can under the situation that does not break away from its main idea, make various modifications and variations.In this exemplary embodiment, the n point electrode is arranged on two lines.Yet, the invention is not restricted to this.And, not to necessarily require line to arrange linearly.
[the 3rd exemplary embodiment]
The 3rd exemplary embodiment has been described.The luminescent device 300 of this exemplary embodiment has been shown among Fig. 8.Luminescent device 300 is different from the luminescent device 100 of first exemplary embodiment with regard to electrode.Other configuration of luminescent device 300 is identical with the configuration of the luminescent device 100 of first exemplary embodiment.Luminescent device 300 does not arrange the n point electrode.Like this, owing to there are many points common with first exemplary embodiment, therefore omit the description common with first exemplary embodiment.
1. light emitting semiconductor device
Fig. 9 is the view that illustrates along the cross section structure of the luminescent device 300 of the line J3-J3 of Fig. 8 intercepting.Fig. 3 does not illustrate concrete cross section but conceptual view.Luminescent device 300 has sapphire substrates 10, semiconductor layer 20, nesa coating 40, insulating barrier 50, insulating barrier 60, p point electrode PD, p wiring PK, p flat tip electrode PX, n wiring NK and n flat tip electrode NX.
N wiring PK is the pectination n electrode part with n wiring NK31, NK22 of Fig. 8.N wiring NK31, NK32 are set to the n-type contact layer of contact semiconductor layer 20.P wiring PK1, PK2, PK3 are the pectination p wiring portion with pectination shape.
2. the layout of point electrode
The position of layout points electrode is described subsequently.Distance between p point electrode PL12 and the n wiring NK31 is a3.Distance between p point electrode PL13 and the n wiring NK31 is a3.
Distance between p point electrode PC11 and the n wiring NK31 is b3.Distance between p point electrode PC12 and the n wiring NK31 also is b3.
Interelectrode distance a3, b3 have following relation of plane recently.
a3<b3 （2）
In this exemplary embodiment, nearest interelectrode distance is the distance between p point electrode and the n wiring.As using shown in the mathematical expression (2), more away from the central point O of luminescent device 300, interelectrode distance becomes more little recently.That is to say that more away from the central point O of luminescent device 300, it is more high that electrode density becomes.On the other hand, the closer to the central point O of luminescent device 300, interelectrode distance becomes more big recently.That is to say that the closer to the central point O of luminescent device 300, it is more low that electrode density becomes.
As mentioned above, in luminescent device 300, the point electrode loosely is arranged on the position of the central point O of more close light-emitting area, and point electrode is arranged on thick and fast further from the position of the central point O of light-emitting area.
Therefore, similarly be the luminescent device 100 of first exemplary embodiment, electric current is easy to flow to peripheral part of the luminescent device 300 of this exemplary embodiment.That is to say that luminescent device 300 is launched light substantially equably on light-emitting area.Simultaneously, the distance between the distance between p point electrode PL11 and the n wiring NK31 and p point electrode PL14 and the n wiring NK31 is a bit larger tham a3.Yet, when the ratio b3/a3 of interelectrode distance suitably is set, can produce luminous substantially uniformly.
3. sum up
As above mask body is described, and in the luminescent device 300 according to this exemplary embodiment, more away from the central point O of light-emitting area, distance becomes more narrow between point electrode.That is to say that more away from the central point O of light-emitting area, it is more high that electrode density becomes.On the contrary, the closer to the central point O of light-emitting area, distance becomes more wide between point electrode.That is to say that the closer to the central point O of light-emitting area, it is more low that electrode density becomes.Therefore, the resistance between the electrode of peripheral part of light-emitting area is lower than the resistance between the electrode of central part office.Thereby, realized making even brightness luminescent device 300 at light-emitting area.
Luminous substantially uniformly owing to having realized at light-emitting area, so the luminous output of luminescent device 300 is higher.And, can prevent the quick deterioration of near zone of the center O of luminescent device 300.
Simultaneously, this exemplary embodiment only is exemplary.Thereby, can under the situation that does not break away from its main idea, make various modifications and variations.In this exemplary embodiment, the p point electrode is arranged on three lines.Yet, the invention is not restricted to this.And, not to necessarily require line to arrange linearly.
[the 4th exemplary embodiment]
The 4th exemplary embodiment is described.The luminescent device 400 of shown in Figure 10 exemplary embodiment.Luminescent device 400 is the flip chip type luminescent device, and wherein p flat tip electrode PX and n flat tip electrode NX are arranged on the opposite side that light extracts the surface.Luminescent device 400 does not arrange the p point electrode.Below, the point different with first exemplary embodiment described.
1. light emitting semiconductor device
Figure 11 is the view along the cross section structure of the luminescent device 400 of the line J4-J4 intercepting of Figure 10.Luminescent device 400 has sapphire substrates 10, semiconductor layer 20, reflectance coating 440, insulating barrier 50, insulating barrier 60, p flat tip electrode PX, n point electrode ND, n wiring NK and n flat tip electrode NX.
Reflectance coating 440 is reverberation and the film made by electric conducting material.For example, can use Al, Al alloy, Ag, Ag alloy etc.The p-type contact layer of reflectance coating 440 direct contact semiconductor layers 20.Thereby p flat tip electrode PX and reflectance coating 440 are electrically connected.The n-type contact layer of the direct contact semiconductor layer 20 of n point electrode NX.N wiring NK is set to be electrically connected n point electrode ND and n flat tip electrode NX.N wiring NK is the plane electrode part with flat shape.
2. the layout of point electrode
The position of layout points electrode is described subsequently.In luminescent device 400, arrange a plurality of n point electrode ND separately.As shown in Figure 12, four n point electrode ND arrange on the online L41.On the online L42, three n point electrode ND have been arranged.On the online L43, four n point electrode ND have been arranged.Distance between line L41 and the line L42 is A4.Distance between line L42 and the line L43 is B4.Outer distance A4 is less than interior partial distance B4.
As shown in figure 12, the n point electrode NC41 of the central point O of close light-emitting area and the distance between the n point electrode NC42 are b4.Herein, n point electrode NC41 and n point electrode NC42 are the n point electrode of the central point O of close light-emitting area.Distance between n point electrode NR41 and the n point electrode NR42 is a4.Herein, n point electrode NR41 is away from the n point electrode of the central point O of light-emitting area.N point electrode NR42 is the n point electrode of the most close n point electrode NR41.
Nearest die opening a4, b4 have following relation of plane.
a4<b4 （3）
In this exemplary embodiment, interelectrode distance is the distance between the n point electrode recently,, has the distance between electrodes of identical polar that is.As illustrating with mathematical expression (3), more away from the central point O of luminescent device 400, interelectrode distance becomes more little recently.That is to say that more away from the central point O of luminescent device 400, it is more high that electrode density becomes.On the other hand, the closer to the central point O of luminescent device 400, interelectrode distance becomes more big recently.That is to say that the closer to the central point O of luminescent device 400, it is more low that electrode density becomes.
As mentioned above, in luminescent device 400, the point electrode loosely is arranged on the position of the central point O of more close light-emitting area, and point electrode is arranged on thick and fast further from the position of the central point O of light-emitting area.Therefore, as the luminescent device 100 of first exemplary embodiment, electric current is easy to flow to peripheral part of the luminescent device 400 of this exemplary embodiment.That is to say that luminescent device 400 is launched light substantially equably on light-emitting area.
4. sum up
As above mask body is described, and according to the luminescent device 400 of this exemplary embodiment, more away from the central point O of light-emitting area, distance becomes more narrow between point electrode.That is to say that more away from the central point O of light-emitting area, it is more high that electrode density becomes.On the contrary, the closer to the central point O of light-emitting area, distance becomes more wide between point electrode.That is to say that the closer to the central point O of light-emitting area, it is more low that electrode density becomes.Thereby, realized making even brightness luminescent device 400 on light-emitting area.
Luminous substantially uniformly owing to having realized at light-emitting area, so the luminous output of luminescent device 400 is higher.And, can prevent the quick deterioration of near zone of the center O of luminescent device 200.
Simultaneously, this exemplary embodiment only is exemplary.Thereby, can under the situation that does not break away from its main idea, make various modifications and variations.In this exemplary embodiment, the n point electrode is arranged on five lines.Yet, the invention is not restricted to this.And, not to necessarily require line to arrange linearly.
[the 5th exemplary embodiment]
The 5th exemplary embodiment has been described.In first to fourth exemplary embodiment, change with the distance between the line of the linear point electrode of arranging at the equal intervals place.In this exemplary embodiment, the outside point electrode of same line is arranged in outside position.
The luminescent device 500 of this exemplary embodiment shown in Figure 13.With regard to the layout of n point electrode, luminescent device 500 is different from the luminescent device 100(of first exemplary embodiment with reference to figure 1).Thereby, difference has only been described.
1. the layout of point electrode
As shown in figure 13, the position of n point electrode NL51, NL53, NR51, NR53 is different from n point electrode NL11, NL13, the NR11 of luminescent device 100, the layout of NR13 respectively.N point electrode NL51, NL53, NR51, NR53 move along outside direction, that is, move along the line direction of point of distance O.
Therefore, between the point electrode between p point electrode PL11 and the n point electrode NL51 apart from a51 less than between the point electrode between p point electrode PL12 and the n point electrode NL12 apart from a1.Therefore, more away from central point O, it is more high that electrode density becomes.And the closer to central point O, it is more low that electrode density becomes.This trend is than more remarkable in the luminescent device 100 of first exemplary embodiment.
Simultaneously, between the point electrode between p point electrode PL12 and the n point electrode NL51 apart from a52 greater than between the point electrode between p point electrode PL12 and the n point electrode NL12 apart from a1.Yet when seeing from p point electrode PL12, nearest n point electrode is n point electrode NL12.That is to say, stayed and got over away from central point O, the trend that nearest distance between electrodes becomes more little.
The n point electrode of the most close p point electrode PC11 is n point electrode NL12.Corresponding distance between electrodes is b1.And the n point electrode of the most close p point electrode PL12 is n point electrode NL12.Corresponding distance between electrodes is a1.The n point electrode of the most close p point electrode PL11 is n point electrode NL51.Corresponding distance between electrodes is a51.
Like this, when supposition when two electrodes of close arbitrary electrode are pair of electrodes, along with the distance of decentre point O is more far away, this becomes more little to distance between electrodes.The closer to central point O, this becomes more little to distance between electrodes.Much less electric current is easy to flow to and has low-resistance place.Therefore, kept that electric current is easy to flow to peripheral part of luminescent device 500 and the trend that is difficult to flow to core.
In luminescent device 500, the point electrode loosely is arranged on the position of the central point O of more close light-emitting area, is arranged on further from the position of the central point O of light-emitting area and point electrode is intensive as mentioned above.
2. variant embodiment
The p point electrode PL12 of luminescent device 500, PL13, PR12, PR13 can be arranged so that they depart from along the line direction outwardly.In this case, more away from central point O, the trend that electrode density becomes more high is more obvious.
3. sum up
As above mask body is described, and according to the luminescent device 500 of this exemplary embodiment, more away from the central point O of light-emitting area, distance becomes more narrow between point electrode.That is to say that more away from the central point O of light-emitting area, it is more high that electrode density becomes.On the contrary, the closer to the central point O of light-emitting area, distance becomes more wide between point electrode.That is to say that the closer to the central point O of light-emitting area, it is more low that electrode density becomes.Therefore, the resistance between the electrode of peripheral part of light-emitting area is lower than the resistance between the electrode of central part office.Thereby, realized making at light-emitting area even brightness luminescent device 500.
Luminous substantially uniformly owing to having realized at light-emitting area, the luminous output of luminescent device 500 is higher.And, near the quick deterioration of near zone of the center O of luminescent device 500 can preventing.
Simultaneously, this exemplary embodiment only is exemplary.Thereby, can under the situation that does not break away from its main idea, make various modifications and variations.In this exemplary embodiment, the p point electrode is arranged on three lines and the n point electrode is arranged on two lines.Yet, the invention is not restricted to this.And, not to necessarily require line to arrange linearly.

Claims (10)

1. light emitting semiconductor device comprises:
First conductive-type semiconductor layer;
Luminescent layer;
Second conductive-type semiconductor layer;
The current-carrying part of first polarity, it is connected electrically to described first conductive-type semiconductor layer; And
The current-carrying part of second polarity, it is connected electrically to described second conductive-type semiconductor layer,
Wherein, comprise one of at least a plurality of electrode parts of separating that are arranged on the light-emitting area in the current-carrying part of the current-carrying part of described first polarity and described second polarity, and
Wherein, the position of described electrode part of separating is the closer to the central point of described light-emitting area, described electrode part of separating is more sparsely arranged, and the position of described electrode part of separating is more away from the central point of described light-emitting area, and described electrode part of separating is more arranged thick and fast.
2. light emitting semiconductor device according to claim 1, wherein,
Described a plurality of electrode that separates partly comprises: the electrode part of opening in first minute; And the electrode part of opening in second minute, the described electrode of opening in second minute partly is positioned at than the position of the described electrode part of opening in first minute further from described central point,
The described electrode of opening in second minute partly comprises the electrode part that has less than the second nearest interelectrode distance of the described electrode of opening in the first minute first nearest interelectrode distance partly, and
Described nearest interelectrode distance is the distance between the current-carrying part of described second polarity of the current-carrying part of described first polarity of described electrode part of separating and the most close described electrode part of separating or the most close described electrode part of separating.
3. light emitting semiconductor device according to claim 2, wherein,
Described nearest interelectrode distance is the distance between the current-carrying part of the electrode that the separates part of first polarity and described second polarity.
4. light emitting semiconductor device according to claim 3, wherein,
In the current-carrying part of the current-carrying part of described first polarity and described second polarity each includes a plurality of described electrode parts of separating, and
Distance between the electrode that the separates part of the electrode that the separates part of the current-carrying part that described nearest interelectrode distance is described first polarity and the current-carrying part of described second polarity.
5. light emitting semiconductor device according to claim 3, wherein,
Only the current-carrying part of described first polarity comprises described a plurality of electrode part of separating, and
Distance between the electrode that the separates part of the current-carrying part that described nearest interelectrode distance is described first polarity and the current-carrying part of described second polarity.
6. light emitting semiconductor device according to claim 4, wherein,
The current-carrying part of described first polarity comprises the pectination wiring portion of described first polarity that the electrode that the separates part that makes described first polarity is electrically connected each other, and
The current-carrying part of described second polarity comprises the pectination wiring portion of second polarity that the electrode that the separates part that makes described second polarity is electrically connected each other.
7. light emitting semiconductor device according to claim 5, wherein,
The current-carrying part of described first polarity comprises the pectination wiring portion of first polarity with pectination shape that is electrically connected described electrode part of separating,
The current-carrying part of described second polarity comprises the comb electrode part of second polarity with pectination shape, and
Described nearest interelectrode distance is the distance that is connected between the comb electrode part of the electrode that the separates part of described first polarity of pectination wiring portion of described first polarity and described second polarity.
8. light emitting semiconductor device according to claim 6, wherein,
Ratio b/a is in the scope of 1.05≤b/a≤1.45,
Wherein,
" a " expression is in electrode part that described on central point first line farthest of described light-emitting area separates and be only second to described nearest interelectrode distance between the described electrode part of separating of described first line on central point second line farthest of described light-emitting area, and
" b " expression is in the described electrode part of separating on the 3rd line of the central point of close described light-emitting area and be only second to the described nearest interelectrode distance between the most described electrode part of separating of the 4th line of the central point of close described light-emitting area of described the 3rd line.
9. light emitting semiconductor device according to claim 8, wherein,
The described ratio b/a of described nearest interelectrode distance b and described nearest interelectrode distance a is in the scope of 1.15≤b/a≤1.35.
10. light emitting semiconductor device according to claim 2, wherein,
The current-carrying part of described first polarity comprises the electrode part of separating of described first polarity, and
Described nearest interelectrode distance is the distance between described first polarity the described electrode part of separating.
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