KR101890691B1 - Semiconductor light emitting element - Google Patents

Semiconductor light emitting element Download PDF

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KR101890691B1
KR101890691B1 KR1020160028400A KR20160028400A KR101890691B1 KR 101890691 B1 KR101890691 B1 KR 101890691B1 KR 1020160028400 A KR1020160028400 A KR 1020160028400A KR 20160028400 A KR20160028400 A KR 20160028400A KR 101890691 B1 KR101890691 B1 KR 101890691B1
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electrode
layer
transparent electrode
semiconductor layer
type
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KR1020160028400A
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Korean (ko)
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KR20170105319A (en
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유태경
김대원
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유태경
김대원
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Priority to JP2016087731A priority patent/JP6134420B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Abstract

The present invention provides a semiconductor device comprising: a first semiconductor layer having a first polarity; A second semiconductor layer disposed apart from the first semiconductor layer and having a second polarity; An active layer positioned between the first semiconductor layer and the second semiconductor layer; A transparent electrode formed on the second semiconductor layer; A non-conductive reflective film formed to cover the main surface of the transparent electrode and having at least one via hole formed therein; A reflective electrode formed on the non-conductive reflective film; And a connection electrode which is filled in the via hole and electrically connects the reflection electrode and the transparent electrode.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

The present invention relates to a semiconductor light emitting device having reduced electrical contact resistance and improved luminous efficiency.

A light-emitting element is a pn junction diode whose electrical energy is converted into light energy. It can be produced as a compound semiconductor such as a group or group on a periodic table, and can be implemented in various colors by controlling the composition ratio of the compound semiconductor. Do.

When the forward voltage is applied to the light emitting device, the electrons of the n-type semiconductor layer and the holes of the p-type semiconductor layer are coupled to each other to correspond to the band gap energy of the conduction band and the valance band This energy is emitted in the form of heat or light, and when emitted in the form of light, it becomes a light emitting device.

For example, nitride semiconductors have received great interest in the development of optical devices and high power electronic devices due to their high thermal stability and wide bandgap energy. Particularly, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device using a nitride semiconductor are commercially available and widely used.

Recently, demand for high-efficiency LEDs has been on the rise.

In order to solve the above-described problems, the present invention is to provide a semiconductor light emitting device which improves the luminous efficiency by increasing the conductivity in the p-type electrode layer.

According to an embodiment of the present invention, a semiconductor light emitting device includes: a first semiconductor layer having a first polarity; A second semiconductor layer disposed apart from the first semiconductor layer and having a second polarity; An active layer positioned between the first semiconductor layer and the second semiconductor layer; A transparent electrode formed on the second semiconductor layer; A non-conductive reflective film formed to cover the main surface of the transparent electrode and having at least one via hole formed therein; A reflective electrode formed on the non-conductive reflective film; And a connection electrode which is filled in the via hole and electrically connects the reflective electrode and the transparent electrode.

The semiconductor light emitting device may further include an ohmic contact layer formed between the transparent electrode and the connection electrode.

The ohmic contact layer may include a metal layer including at least one of nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), platinum (Pt), silver (Ag), and tungsten can do.

The semiconductor light emitting device may further include a connection electrode formed between the transparent electrode and the connection electrode.

Here, the connection electrode may further include an ohmic contact layer formed on a surface in contact with the transparent electrode.

Here, the non-conductive reflective film may have a reflectivity of 80% or more with respect to light having a wavelength of 400 nm, as compared with the case where the external lead frame is one of copper, gold, gold plating and copper plating.

Here, the non-conductive reflective film may include a distributed Bragg reflector that is repeatedly laminated with a TiO 2 / SiO 2 combination.

Here, the pair of distributed Bragg reflectors may have a thickness of 40 to 200 nm in order to reflect light in the ultraviolet region of the output light emitted from the active layer.

Here, the transparent electrode may include ITO, ZnO, or a metal layer that transmits at least 90% of light in a 400 nm wavelength region.

The transparent electrode may have a thickness of 20 to 500 nm and may include at least one selected from the group consisting of Ni, Ti, W, Ag, Cr, Pd, Mo). ≪ / RTI >

Here, the transparent electrode may include an inhomogeneous surface formed on the surface to which the non-conductive reflective film is attached.

Here, the inhomogeneous surface may be formed on the surface of the non-conductive reflective film except the contact surface of the connection electrode of the transparent electrode.

Here, the non-conductive reflective film may be a light transmitting material including at least one of Si x O y , Ti m O n , Ta 2 O 5 , and MgF 2 .

Here, the second semiconductor layer may include an inhomogeneous surface formed on a surface in contact with the transparent electrode.

Here, the semiconductor light emitting device may further include an n-type electrode portion disposed on the second semiconductor layer.

Here, the n-type electrode portion may include an n-type electrode insulating layer; An n-type electrode filled in each of the plurality of via holes formed in the n-type electrode insulating layer; And an n-type bonding member disposed on the n-type electrode insulating layer.

Here, the n-type electrode may be arranged in a matrix structure together with the connection electrode.

Here, the n-type electrode and the connection electrode may have an interlocking structure.

According to an embodiment of the present invention, an ohmic contact layer is formed between a connection electrode filled in a plurality of via-holes and a transparent electrode, thereby increasing the conductivity and improving the luminous efficiency It becomes possible to maximize it.

Further, according to an embodiment of the present invention, excellent output light characteristics can be obtained by providing a non-conductive reflective film having a high reflectivity to light in the ultraviolet region band. Further, when the lead frame is plated with copper or gold, excellent output light characteristics can be obtained.

According to an embodiment of the present invention, not only ohmic contact occurs between a transparent electrode made of a conductive oxide and a connection electrode made of a metal material, but also minimizes a period during which impurities are formed during the manufacturing process, The bonding can be made excellent.

1 is a sectional view of a first embodiment of a semiconductor light emitting device according to the present invention.
2 is an enlarged sectional view for explaining a connection structure between the connection electrode and the transparent electrode in FIG.
3 is a plan view of the semiconductor light emitting device shown in FIG.
4 is a sectional view of a second embodiment of a semiconductor light emitting device according to the present invention.
5 is a sectional view of a third embodiment of a semiconductor light emitting device according to the present invention.
6 is a sectional view of a fourth embodiment of the semiconductor light emitting device according to the present invention.
7 is a cross-sectional view of a fifth embodiment of the semiconductor light emitting device according to the present invention
8 is a plan view of the semiconductor light emitting device shown in FIG.

Hereinafter, a semiconductor light emitting device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, different embodiments are given the same reference numerals, and the description thereof is replaced with the first explanation.

FIG. 1 is a cross-sectional view of a first embodiment of a semiconductor light emitting device according to the present invention, and FIG. 2 is an enlarged cross-sectional view illustrating a connection structure between a connection electrode and a transparent electrode in FIG.

1 and 2, a semiconductor light emitting device according to a first embodiment of the present invention includes a substrate 10, a buffer layer 20, a first semiconductor layer 30 (n-type semiconductor), an active layer 40 Non-conductive reflective film 91 having a first semiconductor layer 50 (p-type semiconductor), a transparent electrode 60, an ohmic contact layer 71, an n-type bonding pad 85 and a via hole 91-3, And a reflective electrode 92. [0033] FIG.

The substrate 10 is mainly composed of sapphire (Al 2 O 3 ), SiC, Si, GaN, glass or the like. This substrate 10 can be finally removed when constructing a flip-type light emitting device or a vertical light emitting device (see FIG. 5).

The buffer layer 20 is configured to bond the substrate 10 and the first semiconductor layer 30. The buffer layer 20 may be omitted.

A first semiconductor layer 30 of n-type is formed on the buffer layer 20 and a second semiconductor layer 50 of p-type is disposed apart from the first semiconductor layer 30. The first semiconductor layer 30, The active layer 40, which is a light emitting layer, is located between the second semiconductor layers 50.

The first semiconductor layer 30 includes an inhomogeneous surface formed on a surface in contact with the active layer 40 and the second semiconductor layer 50 includes a heterogeneous surface formed on a surface in contact with the transparent electrode 60, Including the surface, can be configured to increase the contact property. A non-homogeneous surface is formed on the surface of the transparent electrode 60 on which the non-conductive reflective film 91 is attached and the non-homogeneous surface is formed on the non-conductive reflective film 91 excluding the contact surface of the connection electrode 94 of the transparent electrode 60. [ Can be formed on the attachment surface.

The second semiconductor layer 50 and the active layer 40 are mesa-etched so that the first semiconductor layer 30 is partially exposed. The order of the mesa etch can be changed. The exposed first semiconductor layer 30 is provided with an n-type bonding pad 85.

On the second semiconductor layer 50, a transparent electrode 60 for current diffusion is formed in the second semiconductor layer 50. The transparent electrode 60 has a thickness of 20 to 500 nm and is formed of a material selected from the group consisting of Ni, Au, Pd, Ti, Pt, Ag, At least one, or a material such as ITO, ZnO, and a thin carbon structure.

A non-conductive reflective film 91 is formed on the transparent electrode 60. The non-conductive reflective film 91 may be made of a transparent material containing at least one of Si x O y , Ti m O n , Ta 2 O 5 , and MgF 2 (where x, y, m and n are positive integers) A single distributed Bragg reflector consisting of a combination of SiO 2 and TiO 2 , a plurality of different dielectric films or dielectric films 91 - 1 and a distributed Bragg reflector (DBR: 91-2). For example, a pair of distributed Bragg reflectors may have a thickness of 40 to 200 nm, and a plurality of pairs of distributed Bragg reflectors may have a thickness of 0.05 to 2 탆. . Since the dielectric film 91-1 has a lower refractive index than the p-type semiconductor layer 50 (for example, GaN), the dielectric film can partially reflect light of a critical angle or more toward the substrate 10, The reflector 91-2 can reflect a larger amount of light toward the substrate 10 and can design for a specific wavelength and can effectively reflect the generated light in response to the wavelength of the generated light. At this time, since the reflectance of this layer becomes maximum when the thickness of each layer constituting the distribution Bragg reflector 91-2 is 1/4 wavelength of the light to be reflected, a pair of distributed Bragg reflectors 91 -2) may be formed to a thickness of 40 to 200 nm considering that the lead frame is copper. That is, in order to reflect ultraviolet light in the 400 nm region, the thickness of the layer of ultraviolet rays felt inside the layer should be 100 nm, and the actual thickness of the layer is calculated by dividing the thickness by the refractive index value of the layer. In the case of copper, the reflectance of ultraviolet light is only about 40%. Therefore, when the lead frame is plated with copper or copper, there is a problem that the reflectance of light in the ultraviolet light wavelength band in the lead frame is extremely low. Accordingly, if the distribution blagger reflector 91-2 of a single layer is designed to have a thickness of 20 to 100 nm and the reflection efficiency of the ultraviolet light is increased, the overall reflectance of the light finally directed to the substrate 10 side is improved. In other words, the reflectance for light of 400 nm can be designed to be 80% or more in comparison with the case where the external lead frame is made of copper, gold, gold plating or copper plating.

On the other hand, an ohmic contact layer 71 is formed on the transparent electrode 60. The ohmic contact layer 71 improves the current conductivity of the p-type electrode branches by forming the ohmic contact between the transparent electrode 60 and the connection electrode 94 and improves the contact property between the transparent electrode 60 and the connection electrode 94 . The structure of the ohmic contact layer 71 will be described in more detail with reference to FIG.

A plurality of via holes 91-3 are formed in the non-conductive reflective film 91. A connection electrode (not shown) is formed on the inner side of the via hole 91-3 to electrically connect the reflective electrode 92 and the transparent electrode 60 94 are formed. The connection electrode 94 is constituted by filling the electrode material inside the via hole 91-3 as a component directly contacting the ohmic contact layer 71. [ As shown in FIG. 2, the plurality of connection electrodes 94 are arranged in a matrix form, and accordingly, the p-type electrode branches are formed, thereby increasing the luminous efficiency.

On the other hand, a reflective electrode 92 is formed on the non-conductive reflective film 91. The reflective electrode 92 not only reflects the light emitted from the active layer 40, but also acts as a p-type bonding pad (p-type electrode). The reflective electrode 92 is formed to be in contact with the connection electrode 94 on the non-conductive reflective film 91 using a metal such as aluminum (Al) or silver (Ag) having high reflectance. The reflective electrode 92 may be formed of chromium (Cr), titanium (Ti), nickel (Ni), or an alloy thereof for stable electrical contact. The reflective electrode 92 is electrically connected to the outside to supply holes to the p-type semiconductor layer 50, and reflects light that is not reflected by the non-conductive reflective film 91.

The n-type bonding pad 85 may be formed on the side of the first semiconductor layer 30 from which the substrate 10 is removed. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 can be changed, and they are mainly composed of GaN in the group III nitride semiconductor light emitting device. The n-type bonding pad 85 may be formed directly on the first semiconductor layer 30 as shown in FIG. 1 and may be formed on the n-type electrode portion 80 of the fifth embodiment (see FIGS. 7 and 8) Or may be formed as a component.

The structure between the ohmic contact layer 71 and the connection electrode 94 in the semiconductor light emitting device according to the present invention constructed as described above will be described in more detail with reference to FIG.

2 is an enlarged cross-sectional view for explaining the connection structure between the connection electrode and the transparent electrode in FIG. More specifically, FIG. 2 (a) shows a first example of the ohmic contact layer, FIG. 2 (b) shows a second example, and FIG. 2 (c) shows a third example.

2 (a), a connection electrode 94 filled with an electrode material is formed inside the via hole 91-3 formed in the non-conductive reflective film 91, And functions to connect the upper reflective electrode 92 to the lower ohmic contact layer 71.

The ohmic contact layer 71 includes at least one metal selected from the group consisting of Ni, Au, Pd, Ti, Pt, Ag, As the ohmic metal layer, ohmic bonding is performed between the transparent electrode 60 and the connection electrode 94 to increase current conductivity.

The ohmic contact layer 71 may be formed by etching a part of the transparent electrode 60 and forming the ohmic contact layer 71 only on the etched portion as shown in FIG. the ohmic contact layer 71 may be formed so as to protrude by adding the etched portions as shown in FIG. 2 (b), or the ohmic contact layer 71 may be formed without etching the transparent electrode 60 as shown in FIG. 2 (c) May be formed on the transparent electrode 60.

It should be understood that a part of the etching of the transparent electrode 60 may occur during etching for forming the via hole 91-3 or may be caused by direct etching of the transparent electrode 60. [

Hereinafter, the structure of the p-type branched electrode and the n-type bonding pad 85 will be described with reference to a plan view of the first embodiment of the semiconductor light emitting device according to the present invention.

3 is a plan view of the semiconductor light emitting device shown in Fig. As shown in FIG. 3, the semiconductor light emitting device is formed in a square shape in a plan view, and an n-type bonding pad 85 is positioned at a corner side and a connection electrode (not shown) filled in a plurality of via holes 91-3 94 are arranged in a matrix form. As a result, the current flow is excellent, and the luminous efficiency in the active layer 40 is improved.

Hereinafter, the second and third embodiments of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 4 and 5. FIG.

FIG. 4 is a cross-sectional view of a semiconductor light emitting device according to a second embodiment of the present invention, and FIG. 5 is a cross-sectional view of a third embodiment of the semiconductor light emitting device according to the present invention. In the second embodiment, the same components as those in the first embodiment are omitted from the description for the sake of simplicity.

The second embodiment differs from the first embodiment in that the height of the n-type bonding pad 85 is the same as that of the reflective electrode 92. Accordingly, it is possible to directly adhere to the lead frame without reversing the bonding wire.

As shown in Fig. 4, since there is no bonding wire in the vertical type, there is no light loss due to the bonding wire. Furthermore, since the light irradiated to the lead frame side is reflected by the distribution Bragg reflector 91-2 of the nonconductive reflective film 91 (in particular, light in the ultraviolet region band), the overall optical output characteristic is improved.

Hereinafter, a third embodiment in which the light emitting device according to the present invention is configured as a flip type will be described with reference to FIG.

5 is a cross-sectional view of a third embodiment of a semiconductor light emitting device according to the present invention. As shown in the figure, the substrate 10 and the buffer layer 20 are etched in portions different from the first and second embodiments. That is, the lowest layer is the first semiconductor layer 30. In addition, like the second embodiment, the n-type bonding pad 85 is formed at the same height as the reflective electrode 92, and can be brought into direct contact with the lead frame in the reverse direction.

Hereinafter, a fourth embodiment which is a semiconductor light emitting device further including a connection electrode will be described with reference to FIG.

6 is a cross-sectional view of a fourth embodiment of the semiconductor light emitting device according to the present invention. The fourth embodiment differs from the first embodiment in that a connection electrode 70 is further provided and the connection electrode 70 may include an ohmic contact layer 71 and the connection electrode 70 may be in ohmic contact Layer 71 as shown in FIG. In the fourth embodiment, the transparent electrode 60 is formed and then the connection electrode 70 is formed. The uppermost layer of the connection electrode 70 is an ohmic contact layer 71, and the ohmic contact layer 71 And has a structure in which it directly contacts the connection electrode 94.

Hereinafter, a fifth embodiment of the semiconductor light emitting device according to the present invention will be described with reference to FIGS. 7 and 8. FIG.

FIG. 7 is a cross-sectional view of a fifth embodiment of the semiconductor light emitting device according to the present invention, and FIG. 8 is a plan view of the semiconductor light emitting device shown in FIG.

The same elements as those of the first to fourth embodiments of the fifth embodiment of the semiconductor light emitting device according to the present invention will not be described for the sake of simplicity.

The fifth embodiment differs from the first to fourth embodiments in that the n-type electrode 82 and the connection electrode 94 are disposed in an interdigitated relationship to increase the luminous efficiency. To this end, as shown in FIG. 7, the semiconductor light emitting device according to the present invention includes an n-type electrode portion. The n-type electrode unit 80 may be formed on the first semiconductor layer 30 after etching the active layer 40, the second semiconductor layer 50, the non-conductive reflective film 91, and the like. The n-type electrode portion 80 includes an n-type electrode 82 and an n-type electrode 82 which are respectively filled in a plurality of via holes formed in the n-type electrode insulating layer 81 and the n- And an n-type bonding pad 85 disposed on the p-type electrode insulating layer 81. Here, the n-type electrode 82 and the p-type electrode 92 may be structured to mesh with each other and form a matrix structure. This will be described in more detail in FIG.

The first semiconductor layer 30, the second semiconductor layer 50, the transparent electrode 60, the non-conductive reflective film 92, the reflective electrode 94, and the like are stacked on one side The n-type electrode insulating layer 81 for filling the etched holes with the second semiconductor layer is filled in the side surface and the bottom surface of the hole. Next, the n-type electrode insulating layer 81 is etched to form holes to be electrically connected to the outside and the first semiconductor layer 30 thereunder, and then the n-type electrode 82 is filled to form n-type Thereby electrically connecting the electrode 82 and the first semiconductor layer. Then, an n-type bonding pad 85 is formed thereon. By configuring the n-type electrode portion 80 as described above, it becomes possible to arrange the matrix in such a manner that the p-type electrode 92 and the n-type electrode 82 are interdigitated with each other. This will be described in detail with reference to FIG.

Hereinafter, the structure of the p-type branched electrode and the n-type electrode portion 80 will be described with reference to a plan view of the fifth embodiment of the semiconductor light emitting device according to the present invention.

8 is a plan view of the semiconductor light emitting device shown in FIG. As shown in Fig. 8, the semiconductor light emitting device is configured in a rectangular shape in a plan view. The connection electrode 94 and the n-type electrode 82, which are filled in the via hole 91-3, are arranged in a matrix form. Here, the connecting electrode 94 and the n-type electrode 82 may be arranged in a shape in which they are engaged (that is, a coupling structure). That is, the connection electrodes 94 and the n-type electrodes 82 may each have a finger shape, and they may be formed to be mutually interdigitated. The current flows along the current path formed from the connection electrode 94 to the transparent electrode 60, the first semiconductor layer 50, the active layer 40, the first semiconductor layer 30, and the n-type electrode 82, Can smoothly flow.

On the other hand, a p-type bonding member 95 is attached to one side of the reflective electrode 92 disposed on the connection electrode 94, and one side of the n-type electrode insulating layer 81 disposed on the n- An n-type bonding member 85 spaced apart from the p-type bonding member 95 is disposed.

According to an embodiment of the present invention having the above-described structure, by forming an ohmic contact layer between a connection electrode filled in a plurality of via holes and a transparent electrode, conductivity can be increased and luminous efficiency can be maximized.

Further, according to an embodiment of the present invention, excellent output light characteristics can be obtained by providing a non-conductive reflective film having a high reflectivity to light in the ultraviolet region band. Further, when the lead frame is plated with copper or gold, excellent output light characteristics can be obtained.

According to an embodiment of the present invention, not only ohmic contact occurs between a transparent electrode made of a conductive oxide and a connection electrode made of a metal material, but also minimizes a section to be impurityized during a manufacturing process, Can be made excellent.

The above-described semiconductor light emitting device is not limited to the configuration and the method of the embodiments described above, but the embodiments may be modified so that all or some of the embodiments are selectively combined Lt; / RTI >

10: substrate
20: buffer layer
30: first semiconductor layer
40: active layer
50: second semiconductor layer
60: transparent electrode
70: connecting electrode
80: n-type electrode portion
91: Non-conductive reflective film
92: reflective electrode
94: connecting electrode

Claims (18)

A first semiconductor layer having a first polarity;
A second semiconductor layer disposed apart from the first semiconductor layer and having a second polarity;
An active layer positioned between the first semiconductor layer and the second semiconductor layer;
A transparent electrode formed on the second semiconductor layer;
A non-conductive reflective film formed to cover the main surface of the transparent electrode and having at least one via hole formed therein;
A reflective electrode formed on the non-conductive reflective film;
A connection electrode which is filled in the via hole and electrically connects the reflective electrode and the transparent electrode; And
And an ohmic contact layer formed between the transparent electrode and the connection electrode,
Wherein the ohmic contact layer is formed on part or all of the etch groove formed at a position corresponding to the via hole of the transparent electrode,
And the width of the ohmic contact layer is larger than the width of the via hole.
delete The method according to claim 1,
Wherein the ohmic contact layer includes a metal layer including at least one of nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), platinum (Pt), silver (Ag), and tungsten (W) Semiconductor light emitting device.
The method according to claim 1,
Further comprising a connection electrode formed on a surface of the transparent electrode and the ohmic contact layer which are in contact with each other.
delete The method according to claim 1,
Wherein the non-conductive reflective film has a reflectance of 80% or more with respect to light having a wavelength of 400 nm, as compared with the case where the external lead frame is one of copper, gold, gold plating and copper plating.
The method according to claim 6,
The non-conductive reflective film, the semiconductor light emitting device including a distributed Bragg ripple varactor repeated stacked in TiO 2 / SiO 2 in combination.
8. The method of claim 7,
Wherein a pair of distributed Bragg reflectors have a thickness of 40 to 200 nm so as to reflect light in an ultraviolet region of output light emitted from the active layer.
The method according to claim 1,
Wherein the transparent electrode comprises ITO, ZnO, or a metal layer transmitting at least 90% of light in a 400 nm wavelength region.
The method according to claim 1,
The transparent electrode has a thickness of 20 to 500 nm and includes at least one of Ni, Ti, W, Ag, Cr, Pd, The semiconductor light emitting device comprising:
The method according to claim 1,
The transparent electrode
And a non-homogeneous surface formed on the non-conductive reflective film adhering surface.
12. The method of claim 11,
Wherein the inhomogeneous surface is formed on the non-conductive reflective film adhering surface excluding the connection electrode contact surface of the transparent electrode.
The method according to claim 1,
Wherein the nonconductive reflective film is a light transmitting material including at least one of Si x O y , Ti m O n , Ta 2 O 5 , MgF 2 (where x, y, m, and n are positive integers) device.
The method according to claim 1,
Wherein the second semiconductor layer comprises:
And a non-homogeneous surface formed on a surface in contact with the transparent electrode.
The method according to claim 1,
And an n-type electrode portion disposed on the second semiconductor layer.
16. The method of claim 15,
The n-type electrode portion
an n-type electrode insulating layer;
An n-type electrode filled in each of the plurality of via holes formed in the n-type electrode insulating layer; And
And an n-type bonding member disposed on the n-type electrode insulating layer and the n-type electrode.
17. The method of claim 16,
Wherein the n-type electrode and the connection electrode are arranged in a matrix structure together.
18. The method of claim 17,
Wherein the n-type electrode and the connection electrode have an interlocking structure.
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