TW201727937A - Light-emitting diode device - Google Patents

Abstract

A light-emitting diode device includes a substrate, an epitaxial layer, a transparent conductive layer, a reflective insulating layer, a first electrode, and a second electrode. The epitaxial layer includes a first type semiconductor layer disposed on the substrate and a second type semiconductor layer disposed on a surface of a partial area of the first type semiconductor layer. The first electrode is disposed on a surface of another partial area of the first type semiconductor layer. The second electrode is disposed on a surface of a partial area of the second type semiconductor layer. The reflective insulating layer covers a surface of the epitaxial layer. The transparent conductive layer is disposed between the second type semiconductor layer and the reflective insulating layer.

Description

Light-emitting diode component

The present invention relates to the field of semiconductor technology, and in particular to a light emitting diode element.

A Light-Emitting Diode (LED) is a semiconductor electronic component that converts electrical energy into light energy. With the continuous advancement of technology, the light-emitting diode has been widely used in the fields of display, television lighting decoration and lighting because of its low power consumption, low heat, no delay, and high brightness.

However, the current structure of the LED component, especially the flip-chip LED component, is usually complicated, and the corresponding manufacturing process is cumbersome, resulting in low production yield.

The invention provides a light-emitting diode component for solving the problem that the structure and process flow of the existing light-emitting diode component are too complicated and cumbersome.

The invention provides a light emitting diode element comprising a substrate, an epitaxial layer, a transparent conductive layer, an insulating reflective layer, and first and second electrodes. The epitaxial layer includes a first type semiconductor layer on the substrate and a first type semiconductor A second type semiconductor layer on the surface of a partial region of the layer. The first electrode is located on a surface of another partial region of the first type semiconductor layer. The second electrode is located on a surface of a partial region of the second type semiconductor layer. An insulating reflective layer covers the surface of the epitaxial layer. The transparent conductive layer is between the second type semiconductor layer and the insulating reflective layer.

In the light emitting diode device provided by the present invention, the surfaces of the first type semiconductor layer and the second type semiconductor layer have a stepped structure, and the surfaces of the first type semiconductor layer and the second type semiconductor layer are respectively provided with the first electrode and the second electrode The insulating reflective layer covers the exposed surface of the epitaxial layer, and the transparent conductive layer is disposed between the second type semiconductor layer and the insulating reflective layer, which simplifies the structure and preparation process of the light emitting diode element and improves the production yield.

11‧‧‧Substrate

12‧‧‧ epitaxial layer

121‧‧‧First type semiconductor layer

122‧‧‧Second type semiconductor layer

13‧‧‧Transparent conductive layer

14‧‧‧Insulating reflective layer

15‧‧‧First electrode

16‧‧‧second electrode

21‧‧‧Substrate

22‧‧‧ epitaxial layer

221‧‧‧N type semiconductor layer

222‧‧‧P type semiconductor layer

23‧‧‧Transparent conductive layer

231‧‧‧Transparent Conductive Unit

24‧‧‧Insulated reflective layer

25‧‧‧First electrode

26‧‧‧second electrode

31‧‧‧Substrate

32‧‧‧ epitaxial layer

321‧‧‧N type semiconductor layer

322‧‧‧P type semiconductor layer

33‧‧‧Transparent conductive layer

331‧‧‧Opening

34‧‧‧Insulated reflective layer

35‧‧‧First electrode

36‧‧‧second electrode

41‧‧‧First metal layer

42‧‧‧Second metal layer

51‧‧‧First metal strip

52‧‧‧Second metal strip

53‧‧‧ Third metal layer

54‧‧‧Fourth metal layer

FIG. 1 is a schematic cross-sectional view of a light emitting diode device according to Embodiment 1 of the present invention.

2A is a schematic cross-sectional view of a light emitting diode device according to Embodiment 2 of the present invention.

2B is a schematic top view of the transparent conductive layer in the second embodiment of the present invention.

FIG. 3A is a schematic cross-sectional view of a light emitting diode device according to Embodiment 3 of the present invention.

FIG. 3B is a schematic top plan view of the transparent conductive layer in the third embodiment of the present invention.

4A is a schematic cross-sectional structural view of a light emitting diode device according to Embodiment 4 of the present invention.

Fig. 4B is a schematic top plan view of Fig. 4A.

FIG. 5A is a schematic top plan view of a light emitting diode element according to Embodiment 5 of the present invention.

FIG. 5B is a schematic top plan view of another LED component provided by Embodiment 5 of the present invention.

FIG. 5C is a schematic top plan view of still another light emitting diode element according to Embodiment 5 of the present invention.

The technical means in the embodiments of the present invention will be clearly and completely described in the following with reference to the drawings in the embodiments of the present invention. For convenience of description, the sizes of different layers and regions are enlarged or reduced, so the sizes and proportions shown in the drawings do not necessarily represent actual dimensions, nor do they reflect the proportional relationship of dimensions.

1 is a schematic cross-sectional view of a light emitting diode device according to Embodiment 1 of the present invention. As shown in FIG. 1 , the device includes a substrate 11 , an epitaxial layer 12 , a transparent conductive layer 13 , an insulating reflective layer 14 , and a first electrode 15 and a second electrode 16; wherein the epitaxial layer 12 includes a first type semiconductor layer 121 on the substrate 11 and a second type semiconductor layer 122 on a surface of a partial region of the first type semiconductor layer 121; An electrode 15 is located on the surface of the other portion of the N-type semiconductor layer 121, the second electrode 16 is located on the surface of the partial region of the P-type semiconductor layer 122, the insulating reflective layer 14 covers the surface of the epitaxial layer 12, and the transparent conductive layer 13 is located at the surface. Between the two-type semiconductor layer 122 and the insulating reflective layer 14. The substrate 11 may specifically be a transparent substrate to achieve a light-emitting effect of the light-emitting diode element. Optionally, the substrate 11 may include, but is not limited to, sapphire, tantalum carbide (SiC), gallium nitride (GaN), and aluminum nitride. Any of (AlN). The epitaxial layer 12 may be a semiconductor element such as a single crystal germanium, a polycrystalline germanium or an amorphous germanium structure, or a mixed semiconductor structure such as tantalum carbide, indium antimonide, lead telluride, indium arsenide, phosphating. Indium, gallium arsenide or gallium antimonide or germanium (SiGe), alloy semiconductors or combinations thereof. In addition, the epitaxial layer 12 may be a semiconductor containing more than one element, and these elements may be selected from the group consisting of gallium (Ga), indium (In), nitrogen (N), aluminum (Al), germanium (Ge), and arsenic (As). , a combination of phosphorus (P) and selenium (Se). This embodiment is not limited thereto.

Specifically, the conductivity types of the first type semiconductor layer 121 and the second type semiconductor layer 122 are different. For example, the first type semiconductor layer 121 is an N type semiconductor layer, and the second type semiconductor layer 122 is a P type semiconductor layer. The first type semiconductor layer 121 is an N type semiconductor layer, and the second type semiconductor layer 122 is a P type semiconductor layer. The epitaxial layer 12 includes an N-type semiconductor layer 121 and a surface of a portion of the N-type semiconductor layer 121 in this order from bottom to top. The surface of the P-type semiconductor layer 122, that is, the surface of the N-type semiconductor layer and the P-type semiconductor layer, has a stepped structure, and there are various methods for preparing such a step structure. For example, an N-type semiconductor layer and a P may be sequentially stacked on a substrate. The semiconductor layer is then etched to a portion of the P-type semiconductor layer until the surface of the N-type semiconductor layer is exposed to form a stepped structure. It can be understood that there are various methods for preparing the epitaxial layer 12, which will not be elaborated here.

Further, the insulating reflective layer 14 can protect the structure of the light emitting diode element, and can further improve the light emitting efficiency of the light emitting diode element by reflecting the light emitted from the light emitting diode to the substrate. Alternatively, the structure of the insulating reflective layer may be a single layer structure or a multilayer structure. Alternatively, the insulating reflective layer 14 may be a multi-layer structure such as a Distributed Bragg Reflectors (DBR) or an Omni-Directional Reflector (ODR).

Among them, the decentralized Bragg mirror is composed of two materials with different refractive indexes alternately arranged. The optical thickness of each layer material is 1/4 of the central reflection wavelength, so it is a quarter-wavelength multi-layer system. The reflectivity of the Bragg mirror is very high, up to 99%, so that the brightness of the LED component can be effectively improved, and the insulating reflective layer of the distributed Bragg mirror can avoid the light absorption problem of the metal reflective layer. The energy gap position can also be adjusted by changing the refractive index or thickness of the material. Further, the decentralized Bragg mirror may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N _{4 ).} ), the preparation of any two materials of zinc sulfide (ZnS) and calcium fluoride (CaF ₂ ). Specifically, the method for preparing the dispersed Bragg mirror can be performed by a conventional method of preparing a distributed Bragg mirror. No longer elaborated.

Wherein, the total reflection mirror may be composed of at least one metal layer and at least one insulation layer, and the metal layer covers the insulation layer over the insulation layer to avoid direct contact with the semiconductor. Further, the metal layer may be any of gold (Au), silver (Ag), aluminum (Al), copper (Cu), palladium (Pd), rhenium (Rh), chromium (Cr), and titanium (Ti). Prepared and formed, the insulating layer may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N ₄ ), vulcanization. Any of zinc (ZnS) and calcium fluoride (CaF ₂ ) is prepared. Specifically, the method of preparing the total reflection mirror can adopt a general method of preparing a total reflection mirror, which will not be described in detail herein.

Further, the insulating reflective layer 14 may have a single layer structure. Further, the insulating reflective layer may comprise a mixture of silicone and titanium oxide. The single-layer insulating reflective layer can effectively simplify the component structure and save the process. Wherein, a transparent conductive layer (TCL) formed between the second type semiconductor layer and the insulating reflective layer has high conductivity and Good light transmission characteristics, good chemical stability, and ability to achieve diffusion current and reduce contact resistance. Further, the transparent conductive layer may include, but is not limited to, nickel nitride (NiAu), indium tin oxide (ITO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and titanium nitride (TiN).

Specifically, the first electrode is formed on the surface of the first type semiconductor layer, electrically connected to the first type semiconductor layer, the second electrode is formed on the surface of the second type semiconductor layer, electrically connected to the second type semiconductor layer, and the first electrode Separate from the second electrode, the insulating reflective layer covering the surface of the epitaxial layer separates the first electrode from the second electrode. Further, the material of the first electrode and the second electrode may be titanium (Ti), chromium (Cr), gold (Au), silver (Ag), aluminum (Al), platinum (Pt) or molybdenum (Mo). The choice of specific materials can be based on actual conditions. Preferably, the first electrode and the second electrode may be formed together in the same process step by evaporation, sputtering, printing process or electroplating process to simplify the process flow. In practical applications, the first electrode and the second electrode may be strip electrodes parallel to the first direction.

In the light emitting diode device provided in this embodiment, the surfaces of the first type semiconductor layer and the second type semiconductor layer have a stepped structure, and the surfaces of the first type semiconductor layer and the second type semiconductor layer are respectively provided with the first electrode and the second electrode The insulating reflective layer covers the exposed surface of the epitaxial layer, and the transparent conductive layer is disposed between the second type semiconductor layer and the insulating reflective layer, which simplifies the structure and preparation process of the light emitting diode element and improves the production yield.

2A is a cross-sectional structural view of a light emitting diode device according to Embodiment 2 of the present invention. As shown in FIG. 2A, the device includes: a substrate 21, an epitaxial layer 22, a transparent conductive layer 23, an insulating reflective layer 24, and a first electrode 25 and a second electrode 26; wherein the epitaxial layer 22 comprises an N-type semiconductor on the substrate 21. The layer 221 and the P-type semiconductor layer 222 on the surface of the partial region of the N-type semiconductor layer 221; the first electrode 25 is located on the surface of the other portion of the N-type semiconductor layer 221, and the second electrode 26 is located at the portion of the P-type semiconductor layer 222. On the surface of the region, the insulating reflective layer 24 covers the surface of the epitaxial layer 22; the transparent conductive layer 23 is located between the P-type semiconductor layer 222 and the insulating reflective layer 24, and the transparent conductive layer 23 includes a plurality of transparent conductive units 231 disposed separately. The substrate 21 may specifically be a transparent substrate to achieve a light-emitting effect of the light-emitting diode element. Optionally, the substrate 21 may include, but is not limited to, sapphire, tantalum carbide (SiC), gallium nitride (GaN), and aluminum nitride. Any of (AlN). The epitaxial layer 22 may be a semiconductor element such as a single crystal germanium, a polycrystalline germanium or an amorphous structure germanium, or a mixed semiconductor structure such as tantalum carbide, indium antimonide, lead telluride, indium arsenide, indium phosphide, Gallium arsenide or gallium antimonide or germanium (SiGe), alloy semiconductors or combinations thereof. In addition, the epitaxial layer 12 may be a semiconductor containing more than one element, and these elements may be selected from the group consisting of gallium (Ga), indium (In), nitrogen (N), aluminum (Al), germanium (Ge), and arsenic (As). , a combination of phosphorus (P) and selenium (Se). This embodiment is not limited thereto.

Specifically, the epitaxial layer 22 includes an N-type semiconductor layer 221 and a P-type semiconductor layer 222 covering a surface of the partial N-type semiconductor layer 221 in order from bottom to top, that is, the surface of the N-type semiconductor layer and the P-type semiconductor layer has a stepped structure. There may be various methods for preparing such a step structure. For example, an N-type semiconductor layer and a P-type semiconductor layer may be sequentially stacked on a substrate, and then a partial region of the P-type semiconductor layer is etched until an N-type semiconductor layer is exposed. The surface forms a stepped structure. It can be understood that there are various methods for preparing the epitaxial layer 22, which will not be elaborated here.

Further, the insulating reflective layer 24 can protect the LED body The structure and the light-emitting efficiency of the light-emitting diode element can be further improved by reflecting the light emitted from the light-emitting diode to the substrate. Alternatively, the structure of the insulating reflective layer may be a single layer structure or a multilayer structure. Alternatively, the insulating reflective layer may be a multi-layer structure such as a Distributed Bragg Reflectors (DBR) or an Omni-Directional Reflector (ODR).

Among them, the decentralized Bragg mirror is composed of two materials with different refractive indexes alternately arranged. The optical thickness of each layer material is 1/4 of the central reflection wavelength, so it is a quarter-wavelength multi-layer system. The reflectivity of the Bragg mirror is very high, up to 99%, so that the brightness of the LED component can be effectively improved, and the insulating reflective layer of the distributed Bragg mirror can avoid the light absorption problem of the metal reflective layer. The energy gap position can also be adjusted by changing the refractive index or thickness of the material. Further, the decentralized Bragg mirror may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N _{4 ).} ), the preparation of any two materials of zinc sulfide (ZnS) and calcium fluoride (CaF ₂ ). Specifically, the method for preparing the dispersed Bragg mirror can be performed by a conventional method of preparing a distributed Bragg mirror. No longer elaborated.

Wherein, the total reflection mirror may be composed of at least one metal layer and at least one insulation layer, and the metal layer covers the insulation layer over the insulation layer to avoid direct contact with the semiconductor. Further, the metal layer material may be any of gold (Au), silver (Ag), aluminum (Al), copper (Cu), palladium (Pd), rhodium (Rh), chromium (Cr), and titanium (Ti). The material is prepared, and the insulating layer may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N ₄ ), Any of zinc sulfide (ZnS) and calcium fluoride (CaF ₂ ) is prepared. Specifically, the method of preparing the total reflection mirror can adopt a general method of preparing a total reflection mirror, which will not be described in detail herein.

Still alternatively, the insulating reflective layer may have a single layer structure. Further, the insulating reflective layer may comprise a mixture of silicone and titanium oxide. The single-layer insulating reflective layer can effectively simplify the component structure and save the process.

Specifically, the first electrode is formed on the surface of the N-type semiconductor layer, electrically connected to the N-type semiconductor layer, the second electrode is formed on the surface of the P-type semiconductor layer, electrically connected to the P-type semiconductor layer, and the first electrode and the second electrode The separation arrangement covers an insulating reflective layer covering the surface of the epitaxial layer to isolate the first electrode from the second electrode. Further, the material of the first electrode and the second electrode may be titanium (Ti), chromium (Cr), gold (Au), silver (Ag), aluminum (Al), platinum (Pt) or molybdenum (Mo). The choice of specific materials can be based on actual conditions. Preferably, the first electrode and the second electrode may be formed together in the same process step by evaporation, sputtering, printing process or electroplating process to simplify the process flow.

The transparent conductive layer (TCL) formed between the P-type semiconductor layer and the insulating reflective layer has high conductivity and good light transmission characteristics, good chemical stability, and can reach a diffusion current. Reduce the effect of contact resistance. Further, the transparent conductive layer may include, but is not limited to, nickel nitride (NiAu), indium tin oxide (ITO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and titanium nitride (TiN).

Preferably, in order to reduce the influence of the transparent conductive layer on the light-emitting diode element, more light can be reflected to the substrate through the insulating reflective layer, and the transparent conductive layer 23 may include a plurality of transparent conductive units 231 disposed separately. More light is directly irradiated on the insulating reflective layer through the gap between the transparent conductive units 231 to be reflected and reaches the substrate, thereby further improving the light-emitting diode element on the basis of realizing the diffusion current and reducing the contact resistance. Luminous efficiency.

The transparent conductive layer 23 in this embodiment includes a plurality of transparent conductive units 231 disposed separately. The transparent conductive units 231 are independent of each other, and no direct contact occurs, but is indirectly connected through the second electrodes. For example, FIG. 2B is a schematic top view of a transparent conductive layer according to Embodiment 2 of the present invention. As shown in FIG. 2B, the transparent conductive layer 23 includes a plurality of transparent conductive units 231 disposed separately, and between the transparent conductive units 231. Not in direct contact. It should be noted that the figure is only an exemplary embodiment, and the specific parameters of the transparent conductive layer 23 are not limited. For example, the arrangement, shape, and the like of the transparent conductive unit 231 can be set according to the size and structure of the element.

In the light emitting diode device provided in this embodiment, the surface of the N-type semiconductor layer and the P-type semiconductor layer have a stepped structure, and the surfaces of the N-type semiconductor layer and the P-type semiconductor layer are respectively provided with a first electrode and a second electrode, and an insulating reflective layer The surface of the exposed epitaxial layer is covered, and a transparent conductive layer is disposed between the P-type semiconductor layer and the insulating reflective layer, which simplifies the structure and preparation process of the LED component and improves the production yield. And the transparent conductive layer comprises a plurality of transparent conductive units disposed separately, so that more light is directly irradiated on the insulating reflective layer to reflect and reach the substrate, thereby further improving the light emission based on the realization of the diffusion current and the reduction of the contact resistance. Luminous efficiency of polar body components.

3A is a cross-sectional structural view of a light emitting diode device according to Embodiment 3 of the present invention. As shown in FIG. 3A, the device includes: a substrate 31, The epitaxial layer 32, the transparent conductive layer 33, the insulating reflective layer 34, and the first electrode 35 and the second electrode 36; wherein the epitaxial layer 32 includes an N-type semiconductor layer 321 on the substrate 31 and an N-type semiconductor layer 321 a P-type semiconductor layer 322 on the surface of the partial region; the first electrode 35 is located on the surface of the other portion of the N-type semiconductor layer 321, and the second electrode 36 is located on the surface of the partial region of the P-type semiconductor layer 322; the insulating reflective layer 34 covers the surface of the portion The transparent conductive layer 33 is located between the P-type semiconductor layer 322 and the insulating reflective layer 34. The transparent conductive layer 33 is provided with an opening 331 having an opening ratio of not more than 90%.

Here, the opening ratio can be calculated by the following formula: the opening ratio = (1 - area of the transparent conductive layer / area of the P-type semiconductor layer) × 100%. The area of the transparent conductive layer referred to herein refers to the actual area of the transparent conductive layer, that is, the area of the transparent conductive layer not including the opening.

The substrate may specifically be a transparent substrate to achieve a light-emitting effect of the light-emitting diode element. Optionally, the substrate may include, but is not limited to, sapphire, tantalum carbide (SiC), gallium nitride (GaN), and aluminum nitride (AlN). Any of them. The epitaxial layer may be a semiconductor element such as a single crystal germanium, a polycrystalline germanium or an amorphous structure, or a mixed semiconductor structure such as tantalum carbide, indium antimonide, lead telluride, indium arsenide, indium phosphide, or arsenic. Gallium or germanium or germanium or germanium (SiGe), alloy semiconductors or combinations thereof. In addition, the epitaxial layer 12 may be a semiconductor containing more than one element, and these elements may be selected from the group consisting of gallium (Ga), indium (In), nitrogen (N), aluminum (Al), germanium (Ge), and arsenic (As). , a combination of phosphorus (P) and selenium (Se). This embodiment is not limited thereto.

Specifically, the epitaxial layer sequentially includes an N-type semiconductor layer and a P-type semiconductor layer covering a surface of the partial N-type semiconductor layer, that is, an N-type semiconductor, from bottom to top. The surface of the layer and the P-type semiconductor layer have a stepped structure, and the method for preparing the stepped structure may be various. For example, an N-type semiconductor layer and a P-type semiconductor layer may be sequentially stacked on the substrate, and then the P-type semiconductor layer may be sequentially stacked on the substrate. A portion of the region is etched until the surface of the N-type semiconductor layer is exposed to form a stepped structure. It can be understood that there are various methods for preparing the epitaxial layer 22, which will not be elaborated here.

Further, the insulating reflective layer can protect the structure of the light emitting diode element, and can further improve the light emitting efficiency of the light emitting diode element by reflecting the light emitted from the light emitting diode to the substrate. Alternatively, the structure of the insulating reflective layer may be a single layer structure or a multilayer structure. Alternatively, the insulating reflective layer may be a multi-layer structure such as a Distributed Bragg Reflectors (DBR) or an Omni-Directional Reflector (ODR).

Among them, the decentralized Bragg mirror is composed of two materials with different refractive indexes alternately arranged. The optical thickness of each layer material is 1/4 of the central reflection wavelength, so it is a quarter-wavelength multi-layer system. The reflectivity of the Bragg mirror is very high, up to 99%, so that the brightness of the LED component can be effectively improved, and the insulating reflective layer of the distributed Bragg mirror can avoid the light absorption problem of the metal reflective layer. The energy gap position can also be adjusted by changing the refractive index or thickness of the material. Further, the decentralized Bragg mirror may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N _{4 ).} ), the preparation of any two materials of zinc sulfide (ZnS) and calcium fluoride (CaF ₂ ). Specifically, the method for preparing the dispersed Bragg mirror can be performed by a conventional method of preparing a distributed Bragg mirror. No longer elaborated.

Wherein, the total reflection mirror may be composed of at least one metal layer and at least one insulation layer, and the metal layer covers the insulation layer over the insulation layer to avoid direct contact with the semiconductor. Further, the metal layer material may be any of gold (Au), silver (Ag), aluminum (Al), copper (Cu), palladium (Pd), rhodium (Rh), chromium (Cr), and titanium (Ti). The material is prepared, and the insulating layer may be composed of titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalum nitride (Si ₃ N ₄ ), Any of zinc sulfide (ZnS) and calcium fluoride (CaF ₂ ) is prepared. Specifically, the method of preparing the total reflection mirror can adopt a general method of preparing a total reflection mirror, which will not be described in detail herein.

Still alternatively, the insulating reflective layer may have a single layer structure. Further, the insulating reflective layer may comprise a mixture of silicone and titanium oxide. The single-layer insulating reflective layer can effectively simplify the component structure and save the process.

Specifically, the first electrode is formed on the surface of the N-type semiconductor layer, electrically connected to the N-type semiconductor layer, the second electrode is formed on the surface of the P-type semiconductor layer, electrically connected to the P-type semiconductor layer, and the first electrode and the second electrode The separation arrangement covers an insulating reflective layer covering the surface of the epitaxial layer to isolate the first electrode from the second electrode. Further, the material of the first electrode and the second electrode may be titanium (Ti), chromium (Cr), gold (Au), silver (Ag), aluminum (Al), platinum (Pt) or molybdenum (Mo). The choice of specific materials can be based on actual conditions. Preferably, the first electrode and the second electrode may be formed together in the same process step by evaporation, sputtering, printing process or electroplating process to simplify the process flow. In practical applications, the first electrode and the second electrode may be strip electrodes parallel to the first direction.

a transparent conductive layer (TCL) formed between the P-type semiconductor layer and the insulating reflective layer, It has high conductivity and good light transmission characteristics, good chemical stability, and can achieve diffusion current and reduce contact resistance. Further, the transparent conductive layer may include, but is not limited to, nickel nitride (NiAu), indium tin oxide (ITO), zinc oxide (ZnO), aluminum zinc oxide (AZO), and titanium nitride (TiN).

In this embodiment, in order to reduce the influence of the transparent conductive layer on the light-emitting diode element, more light can be reflected to the substrate through the insulating reflective layer, and the transparent conductive layer is provided with an opening to allow more light to pass. The opening is directly irradiated on the insulating reflective layer to reflect and reach the substrate, so that the diffusion current can be reduced and the contact resistance can be reduced, and the luminous efficiency of the light-emitting diode element can be further improved. Specifically, the opening ratio of the transparent conductive layer is not more than 90% to ensure the diffusion current and reduce the contact resistance. Preferably, the openings 331 are evenly distributed, so that the light emitted by the LED components is more uniform, and the luminous effect is optimized.

The transparent conductive layer 33 in this embodiment is a continuous conductive film having openings 331 formed therein. For example, FIG. 3B is a schematic top view of the transparent conductive layer in the third embodiment of the present invention. As shown in FIG. 3B, the transparent conductive layer 33 is a continuous conductive film having an opening 331 formed therein. It should be noted that the figure is only an exemplary embodiment, and the specific parameters of the opening 331 are not limited. For example, the arrangement, shape, and the like of the openings can be set according to the size and structure of the components.

In the light emitting diode device provided in this embodiment, the surface of the N-type semiconductor layer and the P-type semiconductor layer have a stepped structure, and the surfaces of the N-type semiconductor layer and the P-type semiconductor layer are respectively provided with a first electrode and a second electrode, and an insulating reflective layer Covering the exposed epitaxial layer surface, a transparent guide is disposed between the P-type semiconductor layer and the insulating reflective layer The electric layer effectively simplifies the structure and preparation process of the light-emitting diode element and improves the production yield. And the transparent conductive layer is provided with an opening, so that more light is directly irradiated on the insulating reflective layer to reflect and reach the substrate, thereby further improving the light emission of the light emitting diode element on the basis of realizing the diffusion current and reducing the contact resistance. effectiveness.

Optionally, in order to improve the reliability of the electrical connection between the electrode and the external environment, the electrical contact area of the electrode may be increased. Correspondingly, FIG. 4A is a schematic cross-sectional structural diagram of the LED component provided in Embodiment 4 of the present invention. 4A, based on the light-emitting diode element of any one of Embodiments 1 to 3 having the substrate 31, the epitaxial layer 32, the transparent conductive layer 33, and the first electrode 35 and the second electrode 36. The light emitting diode element further includes: a first metal layer 41 and a second metal layer 42 disposed separately; the first metal layer 41 covers the first electrode 35 and a portion of the insulating reflective layer 34; and the second metal layer 42 covers the second Electrode 36 and partially insulating reflective layer 34.

Specifically, FIG. 4B is a schematic plan view of the structure of FIG. 4A. The first metal layer 41 and the second metal layer 42 may be titanium (Ti), chromium (Cr), gold (Au), silver (Ag), aluminum (Al), platinum (Pt) or molybdenum (Mo). The choice of specific materials may be based on actual conditions. Preferably, the first metal layer 41, the second metal layer 42, the first electrode 35 and the second electrode 36 may be formed together in the same process step by evaporation, sputtering, printing process or electroplating process to simplify the process flow.

The light emitting diode element provided in this embodiment can increase the electrical contact area between the component and the outside by providing the first metal layer 41 connected to the first electrode 35 and the second metal layer 42 connected to the second electrode 36. Improve component reliability.

FIG. 5A is a schematic top plan view of a light emitting diode device according to Embodiment 5 of the present invention. As shown in FIG. 5A, the embodiment has a substrate, an epitaxial layer, a transparent conductive layer, and first and second electrodes. In the light-emitting diode element according to any one of the first to third embodiments, the first electrode 35 extends at least one first metal strip 51 toward the second electrode 36; and the second electrode 36 extends toward the first electrode 35. At least one second metal strip 52; the first metal strip 51 and the second metal strip 52 are alternately arranged. In practical applications, the LED component can be packaged by flip chip technology.

Specifically, the first metal strip 51 and the second metal strip 52 are parallel. In order to save the occupied area, the first electrode 35 and the second electrode 36 are perpendicular to the first metal strip 51 and the second metal strip 52. The first metal strip 51 and the second metal strip 52 may be titanium (Ti), chromium (Cr), gold (Au), silver (Ag), aluminum (Al), platinum (Pt) or molybdenum (Mo). The choice of specific materials may be based on actual conditions. Preferably, the first metal strip 51, the second metal strip 52, the first electrode 35 and the second electrode 36 may be formed together in the same process step by evaporation, sputtering, printing process or electroplating process to simplify the process flow. The first metal strip 51 and the second metal strip 52 can help the current to diffuse, thereby improving the luminous efficiency of the light emitting diode element.

In order to improve the stability and reliability of the light-emitting diode element, as shown in FIG. 5B, FIG. 5B is a schematic top view of another light-emitting diode element according to Embodiment 5 of the present invention, which is shown in FIG. 5A. On the basis of the embodiment, the insulating reflective layer 34 covers the first metal strip 51 and the second metal strip 52 and covers a partial region of the first electrode 35 and the second electrode 36. For example, the insulating reflective layer 34 may cover regions of the first electrode 35 and the second electrode 36 except for both ends thereof.

In the above embodiment, the first metal strip and the second metal strip, and the surface of the first electrode and the second electrode are covered with an insulating reflective layer, which can protect the electrode and improve the reliability and stability of the element.

As shown in FIG. 5C, FIG. 5C is a schematic top view of a light emitting diode device according to Embodiment 5 of the present invention. On the basis of the embodiment shown in FIG. 5B, the LED component further includes: The third metal layer 53 and the fourth metal layer 54 are separately disposed; the third metal layer 53 covers a region of the first electrode 35 not covered by the insulating reflective layer 34 and a portion of the insulating reflective layer 34; and the fourth metal layer 54 covers the second electrode A region not covered by the insulating reflective layer 34 and a portion of the insulating reflective layer 34.

In the above embodiment, by providing a first metal layer electrically connected to the first electrode and a second metal layer connected to the second electrode, the electrical connection contact area of the LED component with the outside is increased, and the electrical power of the component is improved. Connection characteristics and reliability.

In the light emitting diode device provided in this embodiment, the surfaces of the first type semiconductor layer and the second type semiconductor layer have a stepped structure, and the surfaces of the first type semiconductor layer and the second type semiconductor layer are respectively provided with the first electrode and the second An electrode, an insulating reflective layer covering the exposed surface of the epitaxial layer, a transparent conductive layer disposed between the second type semiconductor layer and the insulating reflective layer, and the first electrode and the second electrode are extended with metal strips alternately arranged, thereby The structure and preparation process of the light-emitting diode element are effectively simplified, the production yield is improved, and current diffusion is facilitated, thereby improving the luminous efficiency of the light-emitting diode element.

Finally, it should be noted that the above embodiments are merely illustrative of the technical means of the present invention, and are not limited thereto; although the present invention is described with reference to the foregoing embodiments. The detailed description is made by those skilled in the art, and it should be understood that the technical means described in the foregoing embodiments may be modified, or some or all of the technical features may be equivalently replaced; and these modifications or replacements, The nature of the corresponding technical means is not departed from the scope of the technical means of the embodiments of the invention.

11‧‧‧Substrate

12‧‧‧ epitaxial layer

121‧‧‧First type semiconductor layer

122‧‧‧Second type semiconductor layer

13‧‧‧Transparent conductive layer

14‧‧‧Insulating reflective layer

15‧‧‧First electrode

16‧‧‧second electrode

Claims (10)

A light emitting diode device comprising: a substrate; an epitaxial layer comprising a first type semiconductor layer on the substrate and a second type semiconductor layer on a surface of a portion of the first type semiconductor layer; a first electrode on a surface of another portion of the first type semiconductor layer; a second electrode on a surface of a portion of the second type semiconductor layer; an insulating reflective layer covering the surface of the epitaxial layer; And a transparent conductive layer between the second type semiconductor layer and the insulating reflective layer. The light-emitting diode element of claim 1, wherein the transparent conductive layer comprises a plurality of transparent conductive units disposed separately. The light-emitting diode element according to claim 1, wherein the transparent conductive layer is provided with a plurality of openings, wherein the transparent conductive layer has an opening ratio of not more than 90%. The light-emitting diode element according to any one of claims 1 to 3, wherein the material of the transparent conductive layer comprises nickel metal nitride (NiAu), indium tin oxide (ITO), zinc oxide (ZnO), aluminum zinc oxide. (AZO) and any of titanium nitride (TiN). The photodiode element according to any one of claims 1 to 3, wherein the material of the substrate comprises any one of sapphire, tantalum carbide (SiC), gallium nitride (GaN), and aluminum nitride (AlN). The illuminating diode element according to any one of claims 1 to 3, wherein the insulating reflective layer is a Distributed Bragg Reflectors (DBR) or an Omni-Directional Reflector (ODR). ). The light-emitting diode element according to claim 6, wherein the material of the distributed Bragg mirror comprises titanium oxide (TiO ₂ ), cerium oxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), and tantalum oxide (Ta). ₂ O ₅ ), any of tantalum nitride (Si ₃ N ₄ ), zinc sulfide (ZnS), and calcium fluoride (CaF ₂ ). The illuminating diode component of claim 6, wherein the total reflection mirror comprises an insulating layer and a metal layer covering the insulating layer, the metal layer material comprising gold (Au), silver (Ag), aluminum ( At least one of Al), copper (Cu), palladium (Pd), rhodium (Rh), chromium (Cr), and titanium (Ti). The light-emitting diode element according to any one of claims 1 to 3, wherein the insulating reflective layer is made of a mixture of silicone and titanium oxide. Illuminating diode element according to any one of claims 1-3 The light emitting diode component further includes: a first metal layer covering the first electrode and a portion of the insulating reflective layer; and a second metal layer disposed apart from the first metal layer, wherein the second A metal layer covers the second electrode and a portion of the insulating reflective layer.