CN106992234A - LED component - Google Patents
LED component Download PDFInfo
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- CN106992234A CN106992234A CN201610040528.0A CN201610040528A CN106992234A CN 106992234 A CN106992234 A CN 106992234A CN 201610040528 A CN201610040528 A CN 201610040528A CN 106992234 A CN106992234 A CN 106992234A
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- type semiconductor
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- semiconductor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
Abstract
The present invention provides a kind of LED component, including：Substrate, epitaxial layer, transparency conducting layer, insulative reflective layer and first electrode and second electrode；Wherein, epitaxial layer includes the first type semiconductor layer and the second type semiconductor layer on the first type semiconductor layer subregion surface being located on substrate；First electrode is located on the subregion surface of the first type semiconductor layer, and second electrode is located on the subregion surface of the second type semiconductor layer；Insulative reflective layer covers the surface of epitaxial layer；Transparency conducting layer is located between the second type semiconductor layer and insulative reflective layer.The scheme provided by the present invention, can effectively simplify the structure and preparation flow of LED component, improve production yield.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of LED component.
Background technology
Light emitting diode (Light-Emitting Diode, abbreviation LED) is that one kind can be converted electrical energy into
For the semiconductor electronic component of luminous energy.With the continuous progress of technology, due to LED have low-power consumption,
Low-heat, the features such as start no-delay, high brightness, therefore it is widely used in display, television set and adopts
The field such as light decoration and illumination.
But, current LED component, the especially structure of flip LED device generally more complicated, phase
The manufacturing process answered also can be comparatively laborious, causes production yield not high.
The content of the invention
The present invention provides a kind of LED component, structure and technique stream for solving existing LED component
The problem of journey is excessively complicated and cumbersome.
The present invention provides a kind of LED component, including：Substrate, epitaxial layer, transparency conducting layer, insulation are anti-
Penetrate layer and first electrode and second electrode；Wherein, the epitaxial layer includes the be located on the substrate
One type semiconductor layer and the Second-Type semiconductor on the first type semiconductor layer subregion surface
Layer；The first electrode is located on the subregion surface of first type semiconductor layer, second electricity
Pole is located on the subregion surface of second type semiconductor layer；The insulative reflective layer covering is described outer
Prolong the surface of layer；The transparency conducting layer be located at second type semiconductor layer and the insulative reflective layer it
Between.
In the LED component that the present invention is provided, the first type semiconductor layer and Second-Type semiconductor layer surface are in rank
The surface of terraced structure, the first type semiconductor layer and the second type semiconductor layer is respectively arranged with first electrode and
Two electrodes, the epi-layer surface that insulative reflective layer covering is exposed, transparency conducting layer is arranged on Second-Type and partly led
Between body layer and insulative reflective layer, the structure and preparation flow of LED component are effectively simplified, production is improved
Yield.
Brief description of the drawings
Fig. 1 is the cross-sectional view for the LED component that the embodiment of the present invention one is provided；
Fig. 2A is the cross-sectional view for the LED component that the embodiment of the present invention two is provided；
Fig. 2 B are the overlooking the structure diagram of transparency conducting layer in the embodiment of the present invention two；
Fig. 3 A are the cross-sectional view for the LED component that the embodiment of the present invention three is provided；
Fig. 3 B are the overlooking the structure diagram of transparency conducting layer in the embodiment of the present invention three；
Fig. 4 A are the cross-sectional view for the LED component that the embodiment of the present invention four is provided；
Fig. 4 B are Fig. 4 A overlooking the structure diagram；
Fig. 5 A are a kind of overlooking the structure diagram for LED component that the embodiment of the present invention five is provided；
Fig. 5 B are the overlooking the structure diagram for another LED component that the embodiment of the present invention five is provided；
Fig. 5 C are the overlooking the structure diagram for another LED component that the embodiment of the present invention five is provided.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with this hair
Accompanying drawing in bright embodiment, the technical scheme in the embodiment of the present invention is clearly and completely described.
For convenience of explanation, zoomed in or out the size in different layers and region, thus size shown in figure and
Ratio might not represent actual size, and the proportionate relationship of size is not reflected yet.
Fig. 1 is the cross-sectional view for the LED component that the embodiment of the present invention one is provided, such as Fig. 1 institutes
Show, the device includes：Substrate 11, epitaxial layer 12, transparency conducting layer 13, insulative reflective layer 14 with
And first electrode 15 and second electrode 16；Wherein,
Epitaxial layer 12 includes the first type semiconductor layer 121 being located on substrate 11 and partly led positioned at the first type
The second type semiconductor layer 122 on 121 subregion surface of body layer；
First electrode 15 is located on the subregion surface of n type semiconductor layer 121, second electrode 16
In on the subregion surface of p type semiconductor layer 122；Insulative reflective layer 14 covers the table of epitaxial layer 12
Face；Transparency conducting layer 13 is located between the second type semiconductor layer 122 and insulative reflective layer 14.
Wherein, substrate 11 is specifically as follows transparent substrates, can to realize the illumination effect of LED component
Choosing, substrate 11 can include but is not limited to any of sapphire, SiC, GaN, AlN.Outside
Prolong the silicon that layer 12 can be semiconductor element, such as monocrystalline silicon, polysilicon or non crystalline structure, can also
For the semiconductor structure of mixing, such as carborundum, indium antimonide, lead telluride, indium arsenide, indium phosphide, arsenic
Change gallium or gallium antimonide or SiGe (SiGe), alloy semiconductor or its combination.In addition, epitaxial layer 12 can be
Semiconductor comprising more than one elements, these elements can be selected from Ga, In, N, Al, Ge, As, P, Se
Combination.The present embodiment is not limited herein.
Specifically, the first type semiconductor layer 121 is different from the conduction type of the second type semiconductor layer 122.
For example, the first type semiconductor layer 121 is n type semiconductor layer, the second type semiconductor layer 122 is p-type half
Conductor layer.
It is n type semiconductor layer with the first type semiconductor layer 121, the second type semiconductor layer 122 is p-type half
Conductor layer is illustrated, and epitaxial layer 12 includes n type semiconductor layer 121 and covering part N successively from bottom to top
The p type semiconductor layer 122 on the surface of type semiconductor layer 121, i.e. n type semiconductor layer and p type semiconductor layer
Surface be in hierarchic structure, preparing the method for this hierarchic structure can have a variety of, for example, can first exist
It is sequentially overlapped to form n type semiconductor layer and p type semiconductor layer on substrate, then to p type semiconductor layer
Subregion is performed etching, until exposing the surface of n type semiconductor layer, forms hierarchic structure.It can manage
Solution, preparing the process of epitaxial layer 12 has a variety of, no longer elaborates one by one herein.
Further, insulative reflective layer 14 can protect LED device structure, and can be by inciting somebody to action
The light that LED is sent reflexes to substrate, further improves the luminous efficiency of LED component.Optionally, absolutely
The structure in edge reflecting layer can be single layer structure, or sandwich construction.
Optionally, insulative reflective layer 14 can be sandwich construction, such as distributed bragg reflector mirror
(distributed bragg reflectors, abbreviation DBR) or full-shape speculum (Omni-Directional
Reflector, abbreviation ODR).
Wherein, DBR is made up of the materials arranged in alternating of two kinds of different refractivities, and the optics per layer material is thick
The 1/4 of reflection wavelength centered on degree, therefore be a kind of quarter-wave multilayer system.Bragg reflection
The reflectivity of mirror is very high, up to more than 99%, therefore can effectively lift the brightness of LED component, and
And, structure can avoid the problems in terms of light absorption that metallic reflector is present for DBR insulative reflective layer, also
Energy gap position can be adjusted by changing the refractive index or thickness of material.Further, DBR can be by
It is prepared by any two kinds of materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Formed, specifically, common DBR preparation methods can be used by preparing DBR method, herein no longer
Elaborate.
Wherein, ODR can be made up of an at least metal level with an at least insulating barrier, and metal level covering is exhausted
Edge layer, above insulating barrier, to avoid directly contacting with semiconductor.Further, metal level can be with
Prepared and formed by any materials in Au, Ag, Al, Cu, Pd, Rh, Cr, Ti, insulating barrier can
To be prepared by any materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Formed.Specifically, common ODR preparation methods can be used by preparing ODR method, herein not
Elaborate again.
Optional again, insulative reflective layer 14 can be single layer structure, and further, insulative reflective layer can
To include the mixture of silica gel and titanium oxide.The insulative reflective layer of single layer structure can effectively simplify device junction
Structure, saves technique.
Wherein, it is formed at the transparency conducting layer between the second type semiconductor layer and the insulative reflective layer
(Transparent Conductive Layer, abbreviation TCL), possesses high conductivity and preferable printing opacity is special
Property, mechanical hardness height, chemical stability is good, and can reach dissufion current, reduction contact resistance
Effect.Further, any that transparency conducting layer can include but is not limited in NiAu, ITO, ZnO
Kind.
Specifically, first electrode is formed at the first type semiconductor layer surface, it is electrically connected with the first type semiconductor layer
Connect, second electrode is formed at Second-Type semiconductor layer surface, electrically connected with the second type semiconductor layer, and the
One electrode and second electrode are separately positioned, cover the insulative reflective layer of epi-layer surface by first electrode and the
Two electrode isolations are opened.Further, the material of first electrode and second electrode can for Ti, Cr, gold,
Silver, aluminium, platinum or molybdenum etc., depending on the selection of specific material can be according to actual conditions.It is preferred that, the first electricity
Pole and second electrode can be by evaporation, sputter, typography or electroplating technologies in same process procedure
It is collectively forming, with simplification of flowsheet.In practical application, first electrode and second electrode can be and the
The parallel strip electrode in one direction.
The LED component that the present embodiment is provided, the first type semiconductor layer and Second-Type semiconductor layer surface are in rank
The surface of terraced structure, the first type semiconductor layer and the second type semiconductor layer is respectively arranged with first electrode and
Two electrodes, the epi-layer surface that insulative reflective layer covering is exposed, transparency conducting layer is arranged on Second-Type and partly led
Between body layer and insulative reflective layer, the structure and preparation flow of LED component are effectively simplified, production is improved
Yield.
Fig. 2A is the cross-sectional view for the LED component that the embodiment of the present invention two is provided, such as Fig. 2A
Shown, the device includes：
Substrate 21, epitaxial layer 22, transparency conducting layer 23, insulative reflective layer 24 and first electrode 25
With second electrode 26；Wherein,
Epitaxial layer 22 includes the n type semiconductor layer 221 being located on substrate 21 and positioned at n type semiconductor layer
P type semiconductor layer 222 on 221 subregions surface；
First electrode 25 is located on the subregion surface of n type semiconductor layer 221, second electrode 26
In on the subregion surface of p type semiconductor layer 222；Insulative reflective layer 24 covers the table of epitaxial layer 22
Face；Transparency conducting layer 23 is located between p type semiconductor layer 222 and insulative reflective layer 24, electrically conducting transparent
Layer 23 includes multiple separately positioned electrically conducting transparent units 231.
Wherein, substrate 21 is specifically as follows transparent substrates, can to realize the illumination effect of LED component
Choosing, substrate 21 can include but is not limited to any of sapphire, SiC, GaN, AlN.Outside
Prolong the silicon that layer 22 can be semiconductor element, such as monocrystalline silicon, polysilicon or non crystalline structure, can also
For the semiconductor structure of mixing, such as carborundum, indium antimonide, lead telluride, indium arsenide, indium phosphide, arsenic
Change gallium or gallium antimonide or SiGe (SiGe), alloy semiconductor or its combination.In addition, epitaxial layer 12 can be
Semiconductor comprising more than one elements, these elements can be selected from Ga, In, N, Al, Ge, As, P, Se
Combination.The present embodiment is not limited herein.
Specifically, epitaxial layer 22 includes n type semiconductor layer 221 and covering part N successively from bottom to top
The p type semiconductor layer 222 on the surface of type semiconductor layer 221, i.e. n type semiconductor layer and p type semiconductor layer
Surface be in hierarchic structure, preparing the method for this hierarchic structure can have a variety of, for example, can first exist
It is sequentially overlapped to form n type semiconductor layer and p type semiconductor layer on substrate, then to p type semiconductor layer
Subregion is performed etching, until exposing the surface of n type semiconductor layer, forms hierarchic structure.It can manage
Solution, preparing the process of epitaxial layer 22 has a variety of, no longer elaborates one by one herein.
Further, insulative reflective layer 24 can protect LED device structure, and can be by inciting somebody to action
The light that LED is sent reflexes to substrate, further improves the luminous efficiency of LED component.Optionally, absolutely
The structure in edge reflecting layer can be single layer structure, or sandwich construction.
Optionally, insulative reflective layer can be sandwich construction, such as distributed bragg reflector mirror
(distributed bragg reflectors, abbreviation DBR) or full-shape speculum (Omni-Directional
Reflector, abbreviation ODR).
Wherein, DBR is made up of the materials arranged in alternating of two kinds of different refractivities, and the optics per layer material is thick
The 1/4 of reflection wavelength centered on degree, therefore be a kind of quarter-wave multilayer system.Bragg reflection
The reflectivity of mirror is very high, up to more than 99%, therefore can effectively lift the brightness of LED component, and
And, structure can avoid the problems in terms of light absorption that metallic reflector is present for DBR insulative reflective layer, also
Energy gap position can be adjusted by changing the refractive index or thickness of material.Further, DBR can be by
It is prepared by any two kinds of materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Formed, specifically, common DBR preparation methods can be used by preparing DBR method, herein no longer
Elaborate.
Wherein, ODR can be made up of an at least metal level with an at least insulating barrier, and metal level covering is exhausted
Edge layer, above insulating barrier, to avoid directly contacting with semiconductor.Further, metal layer material
It can be prepared and be formed by any materials in Au, Ag, Al, Cu, Pd, Rh, Cr, Ti, insulated
Layer can be by any materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Prepare and formed.Specifically, common ODR preparation methods can be used by preparing ODR method,
This is no longer elaborated.
Optional again, insulative reflective layer can be single layer structure, and further, insulative reflective layer can be wrapped
Mixture containing silica gel and titanium oxide.The insulative reflective layer of single layer structure can effectively simplify device architecture,
Save technique.
Specifically, first electrode is formed at N-type semiconductor layer surface, electrically connected with n type semiconductor layer,
Second electrode is formed at P-type semiconductor layer surface, is electrically connected with p type semiconductor layer, and first electrode and
Second electrode is separately positioned, cover the insulative reflective layer of epi-layer surface by first electrode and second electrode every
Leave.Further, the material of first electrode and second electrode can be gold, silver, aluminium, platinum or molybdenum
Deng depending on the selection of specific material can be according to actual conditions.It is preferred that, first electrode and second electrode can
To be collectively forming by evaporation, sputter, typography or electroplating technology in same process procedure, with letter
Change technological process.
Wherein, it is formed at the transparency conducting layer between p type semiconductor layer and the insulative reflective layer
(Transparent Conductive Layer, abbreviation TCL), possesses high conductivity and preferable printing opacity is special
Property, mechanical hardness height, chemical stability is good, and can reach dissufion current, reduction contact resistance
Effect.Further, any that transparency conducting layer can include but is not limited in NiAu, ITO, ZnO
Kind.
It is preferred that, in order to reduce luminous influence of the transparency conducting layer on LED component so that more luminous energy
Substrate is enough reflexed to by insulative reflective layer, transparency conducting layer 23 can include multiple separately positioned saturating
Bright conductive unit 231, makes more light pass through the gap direct irradiation between each electrically conducting transparent unit 231
Reflected on insulative reflective layer, arrive at substrate, so as to realize dissufion current, reduction contact electricity
On the basis of resistance, additionally it is possible to further improve the luminous efficiency of LED component.
Transparency conducting layer 23 in the present embodiment includes multiple separately positioned electrically conducting transparent units 231, thoroughly
It is independent mutually between bright conductive unit 231, does not occur directly contact, but pass through second electrode
It is indirectly connected with conducting.For example, Fig. 2 B are the plan structure of transparency conducting layer in the embodiment of the present invention two
Schematic diagram, as shown in Figure 2 B, transparency conducting layer 23 include multiple separately positioned electrically conducting transparent units 231,
It is not directly contacted between electrically conducting transparent unit 231.It should be noted that simply a kind of citing shown in figure
Embodiment, and the design parameter of transparency conducting layer 23 is not limited.For example, electrically conducting transparent
Arrangement mode, shape of unit 231 etc. can be according to the sizes and configuration settings of device.
The LED component that the present embodiment is provided, n type semiconductor layer and P-type semiconductor layer surface are in ladder knot
The surface of structure, n type semiconductor layer and p type semiconductor layer is respectively arranged with first electrode and second electrode,
The epi-layer surface that insulative reflective layer covering is exposed, is provided between p type semiconductor layer and insulative reflective layer
Transparency conducting layer, is effectively simplified the structure and preparation flow of LED component, improves production yield.And
Transparency conducting layer includes multiple separately positioned electrically conducting transparent units, makes more light direct irradiations in insulation
Reflected on reflecting layer, arrive at substrate, so as to realize dissufion current, reduce the base of contact resistance
On plinth, the luminous efficiency of LED component is further improved.
Fig. 3 A are the cross-sectional view for the LED component that the embodiment of the present invention three is provided, such as Fig. 3 A
Shown, the device includes：
Substrate 31, epitaxial layer 32, transparency conducting layer 33, insulative reflective layer 34 and first electrode 35
With second electrode 36；Wherein,
Epitaxial layer 32 includes the n type semiconductor layer 321 being located on substrate 31 and positioned at n type semiconductor layer
P type semiconductor layer 322 on 321 subregions surface；
First electrode 35 is located on the subregion surface of n type semiconductor layer 321, second electrode 36
In on the subregion surface of p type semiconductor layer 322；Insulative reflective layer 34 covers the table of epitaxial layer 32
Face；Transparency conducting layer 33 is located between p type semiconductor layer 322 and insulative reflective layer 34, electrically conducting transparent
Layer 33 offers perforate 331, and percent opening is not more than 90%.
Wherein, the percent opening can be calculated by below equation and obtained：Percent opening=(1- electrically conducting transparents
The area of area/p type semiconductor layer of layer) × 100%.Referred to herein as the area of transparency conducting layer refer to
It is the real area of transparency conducting layer, i.e., does not include the area of the transparency conducting layer of perforate.
Wherein, substrate is specifically as follows transparent substrates, optional to realize the illumination effect of LED component
, substrate can include but is not limited to any of sapphire, SiC, GaN, AlN.Epitaxial layer can
Think the silicon of semiconductor element, such as monocrystalline silicon, polysilicon or non crystalline structure, or the half of mixing
Conductor structure, such as carborundum, indium antimonide, lead telluride, indium arsenide, indium phosphide, GaAs or antimony
Gallium or SiGe (SiGe), alloy semiconductor or its combination.In addition, epitaxial layer 12 can be comprising one kind with
The semiconductor of upper element, these elements can be selected from Ga, In, N, Al, Ge, As, P, Se combination.This
Embodiment is not limited herein.
Specifically, epitaxial layer includes n type semiconductor layer and covering part N-type semiconductor successively from bottom to top
The surface of the p type semiconductor layer of layer surface, i.e. n type semiconductor layer and p type semiconductor layer is in ladder knot
Structure, preparing the method for this hierarchic structure can have a variety of, for example, first can be sequentially overlapped on substrate
N type semiconductor layer and p type semiconductor layer are formed, then the subregion of p type semiconductor layer is carved
Erosion, until exposing the surface of n type semiconductor layer, forms hierarchic structure.It is appreciated that preparing epitaxial layer
22 process has a variety of, no longer elaborates one by one herein.
Further, insulative reflective layer can protect LED device structure, and can be by by LED
The light sent reflexes to substrate, further improves the luminous efficiency of LED component.Optionally, dielectric reflective
The structure of layer can be single layer structure, or sandwich construction.
Optionally, insulative reflective layer can be sandwich construction, such as distributed bragg reflector mirror
(distributed bragg reflectors, abbreviation DBR) or full-shape speculum (Omni-Directional
Reflector, abbreviation ODR).
Wherein, DBR is made up of the materials arranged in alternating of two kinds of different refractivities, and the optics per layer material is thick
The 1/4 of reflection wavelength centered on degree, therefore be a kind of quarter-wave multilayer system.Bragg reflection
The reflectivity of mirror is very high, up to more than 99%, therefore can effectively lift the brightness of LED component, and
And, structure can avoid the problems in terms of light absorption that metallic reflector is present for DBR insulative reflective layer, also
Energy gap position can be adjusted by changing the refractive index or thickness of material.Further, DBR can be by
It is prepared by any two kinds of materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Formed, specifically, common DBR preparation methods can be used by preparing DBR method, herein no longer
Elaborate.
Wherein, ODR can be made up of an at least metal level with an at least insulating barrier, and metal level covering is exhausted
Edge layer, above insulating barrier, to avoid directly contacting with semiconductor.Further, metal layer material
It can be prepared and be formed by any materials in Au, Ag, Al, Cu, Pd, Rh, Cr, Ti, insulated
Layer can be by any materials in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2
Prepare and formed.Specifically, common ODR preparation methods can be used by preparing ODR method,
This is no longer elaborated.
Optional again, insulative reflective layer can be single layer structure, and further, insulative reflective layer can be wrapped
Mixture containing silica gel and titanium oxide.The insulative reflective layer of single layer structure can effectively simplify device architecture,
Save technique.
Specifically, first electrode is formed at N-type semiconductor layer surface, electrically connected with n type semiconductor layer,
Second electrode is formed at P-type semiconductor layer surface, is electrically connected with p type semiconductor layer, and first electrode and
Second electrode is separately positioned, cover the insulative reflective layer of epi-layer surface by first electrode and second electrode every
Leave.Further, the material of first electrode and second electrode can for Ti, Cr, gold, silver, aluminium,
Platinum or molybdenum etc., depending on the selection of specific material can be according to actual conditions.It is preferred that, first electrode and second
Electrode can be collectively forming by evaporation, sputter, typography or electroplating technology in same process procedure,
With simplification of flowsheet.In practical application, first electrode and second electrode can be parallel with first direction
Strip electrode.
Wherein, it is formed at the transparency conducting layer between p type semiconductor layer and the insulative reflective layer
(Transparent Conductive Layer, abbreviation TCL), possesses high conductivity and preferable printing opacity is special
Property, mechanical hardness height, chemical stability is good, and can reach dissufion current, reduction contact resistance
Effect.Further, any that transparency conducting layer can include but is not limited in NiAu, ITO, ZnO
Kind.
In the present embodiment, in order to reduce luminous influence of the transparency conducting layer on LED component so that more
Light can reflex to substrate by insulative reflective layer, and transparency conducting layer offers perforate, so that more light
Reflected by perforate direct irradiation on insulative reflective layer, arrive at substrate, so as to realize diffusion
On the basis of electric current, reduction contact resistance, additionally it is possible to further improve the luminous efficiency of LED component.Tool
Body, the percent opening of transparency conducting layer is not more than 90%, to ensure dissufion current, reduction contact resistance
Effect.It is preferred that, perforate 331 can be uniformly distributed so that the light that LED component is sent is more uniform,
Optimized emission effect.
Transparency conducting layer 33 in the present embodiment is the continuous conduction film for offering perforate 331.For example,
Fig. 3 B are the overlooking the structure diagram of transparency conducting layer in the embodiment of the present invention three, as shown in Figure 3 B, thoroughly
Bright conductive layer 33 is continuous conduction film, and perforate 331 is offered thereon.It should be noted that shown in figure
A kind of simply embodiment of citing, and the design parameter of perforate 331 is not limited.For example,
Arrangement mode, shape of perforate etc. can be according to the sizes and configuration settings of device.
The LED component that the present embodiment is provided, n type semiconductor layer and P-type semiconductor layer surface are in ladder knot
The surface of structure, n type semiconductor layer and p type semiconductor layer is respectively arranged with first electrode and second electrode,
The epi-layer surface that insulative reflective layer covering is exposed, is provided between p type semiconductor layer and insulative reflective layer
Transparency conducting layer, is effectively simplified the structure and preparation flow of LED component, improves production yield.And
Transparency conducting layer offers perforate, more light direct irradiations is reflected on insulative reflective layer, supports
Up to substrate, so as on the basis of dissufion current, reduction contact resistance is realized, further improve LED
The luminous efficiency of device.
Optionally, in order to improve the reliability that electrode is electrically connected with the external world, the electrical contact of electrode can be increased
Area, accordingly, Fig. 4 A are the cross-sectional view for the LED component that the embodiment of the present invention four is provided,
As shown in Figure 4 A, with substrate, epitaxial layer, transparency conducting layer and first electrode and second electrode
LED component of the embodiment one into embodiment three described in any embodiment on the basis of, the LED devices
Part also includes：
Separately positioned the first metal layer 41 and second metal layer 42；
The first metal layer 41 covers first electrode and SI semi-insulation reflecting layer；The covering of second metal layer 42 the
Two electrodes and SI semi-insulation reflecting layer.
Specifically, Fig. 4 B are Fig. 4 A overlooking the structure diagram.Wherein, the first metal layer 41 and
Two metal levels 42 can be Ti, Cr, gold, silver, aluminium, platinum or molybdenum etc., and the selection of specific material can basis
Depending on actual conditions.It is preferred that, the first metal layer 41, second metal layer 42, first electrode and the second electricity
It can be extremely collectively forming by evaporation, sputter, typography or electroplating technology in same process procedure,
With simplification of flowsheet.
The LED component that the present embodiment is provided, by set the first metal layer that is connected with first electrode and with
The second metal layer of second electrode connection, can increase device and extraneous electrical-contact area, improve device
Reliability.
Fig. 5 A are a kind of overlooking the structure diagram for LED component that the embodiment of the present invention five is provided, and are such as schemed
Shown in 5A, in the reality with substrate, epitaxial layer, transparency conducting layer and first electrode and second electrode
On the basis of applying LED component of the example one into embodiment three described in any embodiment,
First electrode extends at least one first bonding jumper 51 towards second electrode；Second electrode is electric towards first
Extend at least one second bonding jumper 52 in pole；First bonding jumper 51 and the second bonding jumper 52 are arranged alternately.
In practical application, the LED component can be packaged using flip chip technology.
Specifically, the first bonding jumper 51 is parallel with the second bonding jumper 52.In order to save area occupied, the
One electrode and second electrode, it is vertical with the first bonding jumper 51 and the second bonding jumper 52.
Wherein, the first bonding jumper 51 and the second bonding jumper 52 can be Ti, Cr, gold, silver, aluminium, platinum
Or molybdenum etc., depending on the selection of specific material can be according to actual conditions.It is preferred that, the first bonding jumper 51,
Two bonding jumpers 52, first electrode and second electrode can pass through evaporation, sputter, typography or galvanizer
Skill is collectively forming in same process procedure, with simplification of flowsheet.First bonding jumper 51 and the second gold medal
Category bar 52 can help current spread, so as to improve the luminous efficiency of LED component.
In order to improve the stability and reliability of LED component, as shown in Figure 5 B, Fig. 5 B are the present invention
The overlooking the structure diagram for another LED component that embodiment five is provided, in Fig. 5 A illustrated embodiments
On the basis of, insulative reflective layer covers the first bonding jumper 51 and the second bonding jumper 52, and covers first
The subregion of electrode and second electrode.For example, insulative reflective layer can cover first electrode and
Region of two electrodes in addition to its two ends.
In above-mentioned embodiment, in the first bonding jumper and the second bonding jumper, and first electrode and the second electricity
The part surface covering insulative reflective layer of pole, can play a protective role to electrode, improve the reliable of device
Property and stability.
As shown in Figure 5 C, Fig. 5 C are the vertical view for another LED component that the embodiment of the present invention five is provided
Structural representation, on the basis of Fig. 5 B illustrated embodiments, LED component also includes：It is separately positioned
The 3rd metal level 53 and the 4th metal level 54；
The region and SI semi-insulation that 3rd metal level 53 covering first electrode is not covered by insulative reflective layer are anti-
Penetrate layer；Region and SI semi-insulation that 4th metal level 54 covering second electrode is not covered by insulative reflective layer
Reflecting layer.
In above-mentioned embodiment, by setting the first metal layer that is electrically connected with first electrode, and with second
The second metal layer of electrode connection, increase LED component and extraneous electrical connection contact area, improve device
Connection characteristic and reliability.
In the LED component that the present embodiment is provided, the first type semiconductor layer and Second-Type semiconductor layer surface
In hierarchic structure, the surface of the first type semiconductor layer and the second type semiconductor layer is respectively arranged with first electrode
And second electrode, the epi-layer surface exposed of insulative reflective layer covering, transparency conducting layer is arranged on Second-Type
Between semiconductor layer and insulative reflective layer, also, first electrode and second electrode are extended to have and alternately arranged
The bonding jumper of cloth, so as to be effectively simplified the structure and preparation flow of LED component, improves production yield,
And contribute to current spread, so as to improve the luminous efficiency of LED component.
Finally it should be noted that：Various embodiments above is merely illustrative of the technical solution of the present invention, rather than right
It is limited；Although the present invention is described in detail with reference to foregoing embodiments, this area it is common
Technical staff should be understood：It can still be repaiied to the technical scheme described in foregoing embodiments
Change, or equivalent substitution is carried out to which part or all technical characteristic；And these are changed or replaced
Change, the essence of appropriate technical solution is departed from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a kind of LED component, it is characterised in that including：Substrate, epitaxial layer, transparency conducting layer,
Insulative reflective layer and first electrode and second electrode；Wherein,
The epitaxial layer includes the first type semiconductor layer being located on the substrate and positioned at first type half
The second type semiconductor layer in conductor layer portion region surface；
The first electrode is located on the subregion surface of first type semiconductor layer, second electricity
Pole is located on the subregion surface of second type semiconductor layer；The insulative reflective layer covering is described outer
Prolong the surface of layer；The transparency conducting layer be located at second type semiconductor layer and the insulative reflective layer it
Between.
2. LED component according to claim 1, it is characterised in that the transparency conducting layer bag
Include multiple separately positioned electrically conducting transparent units.
3. LED component according to claim 1, it is characterised in that the transparency conducting layer is opened
Provided with perforate, percent opening is not more than 90%.
4. the LED component according to any one of claim 1-3, it is characterised in that described
Bright conductive layer includes any of NiAu, ITO, ZnO, AZO, TiN.
5. the LED component according to any one of claim 1-3, it is characterised in that the lining
Bottom includes any of sapphire, SiC, GaN, AlN.
6. the LED component according to any one of claim 1-3, it is characterised in that described exhausted
Edge reflecting layer is distributed bragg reflector mirror DBR or full-shape speculum ODR.
7. LED component according to claim 6, it is characterised in that the DBR is included
Any two kinds in TiO2, SiO2, Al2O3, Ta2O5, Si3N4, ZnS, CaF2.
8. LED component according to claim 6, it is characterised in that the ODR includes exhausted
Edge layer and the metal level for covering the insulating barrier, the metal level comprising Au, Ag, Al, Cu, Pd,
At least one of Rh, Cr, Ti.
9. the LED component according to any one of claim 1-3, it is characterised in that described exhausted
Edge reflecting layer is the mixture of silica gel and titanium oxide.
10. the LED component according to any one of claim 1-3, it is characterised in that described
LED component also includes：Separately positioned the first metal layer and second metal layer；
The first metal layer covers the first electrode and SI semi-insulation reflecting layer；The second metal layer
Cover the second electrode and SI semi-insulation reflecting layer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610040528.0A CN106992234A (en) | 2016-01-21 | 2016-01-21 | LED component |
| TW105108147A TWI620343B (en) | 2016-01-21 | 2016-03-16 | Light-emitting diode device |
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| CN201610040528.0A CN106992234A (en) | 2016-01-21 | 2016-01-21 | LED component |
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| TW (1) | TWI620343B (en) |
Cited By (2)
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| CN108808444A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of upside-down mounting VCSEL chips and production method |
| CN114373842A (en) * | 2021-12-31 | 2022-04-19 | 厦门三安光电有限公司 | Flip LED chip, lighting device and display device |
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| TWI373153B (en) * | 2008-09-22 | 2012-09-21 | Ind Tech Res Inst | Light emitting diode, and package structure and manufacturing method therefor |
| TWM394564U (en) * | 2010-07-02 | 2010-12-11 | Harvatek Corp | Wafer level LED package structure |
| TWI496323B (en) * | 2012-04-09 | 2015-08-11 | Delta Electronics Inc | Light emitting module |
| TWI499092B (en) * | 2013-09-26 | 2015-09-01 | Tekcore Co Ltd | A kind of flip chip type light emitting diode structure |
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| CN103035787A (en) * | 2011-09-29 | 2013-04-10 | 上海蓝光科技有限公司 | High-luminance light-emitting diode (LED) chip and manufacture method thereof |
| CN103378255A (en) * | 2012-04-27 | 2013-10-30 | 丰田合成株式会社 | Semiconductor light-emitting element |
| CN103904176A (en) * | 2012-12-26 | 2014-07-02 | 丰田合成株式会社 | Semiconductor light emitting element |
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| CN108808444A (en) * | 2018-06-19 | 2018-11-13 | 扬州乾照光电有限公司 | A kind of upside-down mounting VCSEL chips and production method |
| CN114373842A (en) * | 2021-12-31 | 2022-04-19 | 厦门三安光电有限公司 | Flip LED chip, lighting device and display device |
| CN114373842B (en) * | 2021-12-31 | 2023-12-08 | 厦门三安光电有限公司 | Flip LED chip, lighting device and display device |
Also Published As
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| TWI620343B (en) | 2018-04-01 |
| TW201727937A (en) | 2017-08-01 |
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