JP6218386B2 - Light emitting element - Google Patents

Description

  The present invention relates to a light emitting device structure and a method for manufacturing the same, and more particularly to a light emitting device structure in which an electrode includes a first layer and a second layer and a method for manufacturing the same.

  Light emitting diodes are widely used light sources in semiconductor devices. Since light emitting diodes have characteristics of power saving and longer service life than conventional incandescent bulbs or fluorescent lamps, they are gradually replacing conventional light sources in various fields such as traffic signs, backlight modules, street lamp lighting, It is applied in industries such as medical equipment.

  As light emitting diode light sources are applied and evolved, the demand for brightness increases. How to increase luminous efficiency and improve its brightness is an important direction for the industrial industry to make joint efforts.

  FIG. 9 shows a conventional LED package 30. The LED package 30 includes a package structure 31 and a semiconductor LED chip 32 packaged by the package structure 31. The semiconductor LED chip 32 has a pn contact surface 33, and the package structure 31 is generally a thermosetting material, such as an epoxy resin, or a thermosetting plastic. The semiconductor LED chip 32 is connected to two conductive frames 35 and 56 via wires 34. Epoxy resins can only operate in a low-temperature environment because a degradation phenomenon occurs at high temperatures. Also, since the epoxy resin has a high thermal resistance, the structure of FIG. 9 provides a heat distribution route with a high resistance value of the semiconductor LED chip 32, and the LED package 30 can be applied with low power consumption. Limited.

  An object of the present invention is to provide a light emitting device.

According to one aspect of the present invention, a semiconductor stack including a concave groove having a bottom and a flat base having an upper surface, and a first located in the concave groove and in a partial region of the upper surface of the flat base. An insulating layer of
A first layer comprising a first conductive material and located in a partial region of the upper surface of the flat table; and a second layer comprising a second conductive material and located on the first layer. A light-emitting element including a first electrode including the layer is provided.

  Preferably, the first conductive material forming the first layer of the first electrode is different from the second conductive material forming the second layer of the first electrode. In addition, the reflectance of the first layer of the first electrode with respect to the light beam generated by the light-emitting element is greater than the reflectance of the first electrode with respect to the light beam of the second layer and The reflectivity is greater than 60%.

The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. The top view and sectional drawing of the light emitting element structure which concern on 1st Example of this invention. 1 is a plan view of a light emitting device structure according to a first embodiment of the present invention. The block diagram of the LED package of the conventional light emitting element. The exploded view of the light bulb which concerns on the other Example of this invention.

  Each embodiment for carrying out the present invention will be described with reference to FIGS.

  FIG. 1A is a plan view of a light emitting device according to a first embodiment of the present invention. As shown in FIG. 1A, the light emitting device includes a substrate (not shown) and a semiconductor stack. The semiconductor stack includes a first conductive semiconductor layer 11, an active layer (not shown in FIG. 1A) formed on the first conductive semiconductor layer, and a second conductive semiconductor layer 12. The first conductive semiconductor layer 11 is exposed by etching a part of the second conductive semiconductor layer 12 and the active layer.

  FIG. 1B is a cross-sectional view taken along the cross section line A-A ′. The semiconductor stack includes a recessed groove having a bottom and a flat base having an upper surface. In this embodiment, the upper surface of the flat base becomes the surface of the second conductive semiconductor layer 12, the first conductive semiconductor layer 11 is exposed from the bottom of the concave groove, and the concave groove crosses the active layer 21. . After the light emitting element is formed, the light emitting element is driven by voltage to provide electrons to the first conductive semiconductor layer 11 and to provide holes to the second conductive semiconductor layer 12. Are combined in the active layer 21 to emit light.

  As shown in FIGS. 2A and 2B, the second electrode 13 is formed on the bottom of the groove, on the first conductive semiconductor layer 11, and the second electrode 13 and the first conductive semiconductor layer 11 are formed. And are electrically connected.

  As shown in FIG. 3A, the cross-sectional area cut along the line A-A ′ and the cross-sectional area cut along the line B-B ′ are different in structure and manufacturing process. First, FIG. 3B shows a cross-sectional area taken along line A-A ′. The first insulating layer 14 is formed in the recessed groove and in a partial region of the upper surface of the flat table, and covers the second electrode 13.

  As shown in FIGS. 4A and 4B, the first electrode first layer 15 is formed in a partial region of the upper surface of the flat base and does not overlap with the first insulating layer 14 apart from each other. In the present embodiment, the first electrode first layer 15 includes a first conductive material, and the first conductive material may be, for example, a metal. The first conductive material includes at least one material selected from the group consisting of silver, platinum, and gold, and the thickness of the first layer 15 is not less than 500 mm and not more than 5000 mm.

  As shown in FIGS. 5A and 5B, the first electrode second layer 16 is formed on the first electrode first layer 15, and the first electrode first layer 15 and the first insulating layer 14 are formed. Covering at least a part of In the present embodiment, the first electrode second layer 16 includes a second conductive material, and the second conductive material may be, for example, a metal. The second conductive material includes at least one material selected from the group consisting of nickel, aluminum, copper, chromium, and titanium, and the thickness of the second layer 16 is 2000 mm or more and 1.5 μm or less. . In another embodiment, unlike the first conductive material forming the first layer 15 and the second conductive material forming the second layer 16, the reflection of the light emitted by the light emitting element of the first layer 15 is reflected. The rate is greater than the reflectivity for light rays emitted by the light emitting elements of the second layer 16. Preferably, the reflectivity of the second layer 16 for light rays is greater than 60%.

  As shown in FIGS. 6A and 6B, a second insulating layer 17 is formed on the first electrode second layer 16, and the first electrode second layer 16 is spaced from the second insulating layer 17. Exposed from the area. The region of the second insulating layer 17 and the region of the first insulating layer 14 substantially correspond to each other. In this embodiment, the second insulating layer 17 and the first insulating layer 14 at the edge of the light emitting element may be in direct contact. The material constituting the first insulating layer 14 and the material constituting the second insulating layer 17 may be the same or different, and the composition materials of both are silicon oxide, silicon nitride, aluminum oxide, Zirconium oxide or titanium oxide may be used.

  As shown in FIGS. 7A and 7B, a first electrode pad 18 is formed on the second insulating layer 17 and in a gap region between the second insulating layers 17, and the first electrode pad 18 is a first electrode pad. The first layer 15 and the second layer 16 are electrically connected.

  Next, FIG. 3C shows a cross-sectional area taken along line B-B ′ of FIG. 3A. The first insulating layer 14 is formed in the concave groove and in a partial region of the upper surface of the flat table. In this embodiment, a passage 20 is formed in a region of the upper surface of the second electrode 13 that is not covered by the first insulating layer 14.

  As shown in FIGS. 4A and 4C, the first electrode first layer 15 is formed in a partial region of the upper surface of the flat base and does not overlap the first insulating layer 14 apart from each other. In the present embodiment, the first electrode first layer 15 includes a first conductive material, and the first conductive material may be, for example, a metal. The first conductive material includes at least one material selected from the group consisting of silver, platinum, and gold. The thickness of the first layer 15 is not less than 500 mm and not more than 5000 mm.

  As shown in FIGS. 5A and 5C, the first electrode second layer 16 is formed on the first electrode first layer 15, and the first electrode first layer 15 and the first insulating layer 14 are formed. Covering at least a part of In this embodiment, the first electrode first layer 15 and the first electrode second layer 16 cover the groove. The first electrode second layer 16 includes a second conductive material, which may be, for example, a metal. The second conductive material includes at least one material selected from the group consisting of nickel, aluminum, copper, chromium, and titanium, and the thickness of the second layer 16 is 2000 mm or more and 1.5 μm or less. . In another embodiment, unlike the first conductive material forming the first layer 15 and the second conductive material forming the second layer 16, the reflection of the light emitted by the light emitting element of the first layer 15 is reflected. The rate is greater than the reflectivity for light rays emitted by the light emitting elements of the second layer 16. Preferably, the reflectivity of the second layer 16 for light rays is greater than 60%.

  As shown in FIGS. 6A and 6C, the second insulating layer 17 is formed on the first electrode second layer 16 and the plurality of first insulating layers 14. The partial region of the second insulating layer 17 and the region of the first insulating layer 14 are in direct contact. The material constituting the first insulating layer 14 and the material constituting the second insulating layer 17 may be the same or different, and the composition materials of both are silicon oxide, silicon nitride, aluminum oxide, Zirconium oxide or titanium oxide may be used.

  As shown in FIGS. 7A and 7C, a second electrode pad 19 is formed on the second insulating layer 17 and in the region of the passage 20, and the second electrode pad 19 is electrically connected to the second electrode 13. Is done. FIG. 8 is a plan view of the formed light emitting device 10.

  FIG. 10 is an exploded view of a light bulb according to another embodiment of the present invention. The light bulb 40 includes a lamp cover 41, a lens 42, a light emitting module 44, a lamp socket 45, a heat radiation fin 46, a coupling portion 47, and an electrical terminal 48. The light emitting module 44 further includes a mounting plate 43, and the light emitting elements 10 according to the above-described embodiments are positioned on the mounting plate 43.

The materials of the second electrode 13, the first electrode pad 18, and the second electrode pad 19 described above are chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu). , Gold (Au), aluminum (Al), tungsten (W), tin (Sn), or silver (Ag). A substrate (not shown) is a growth and / or mounting base. The candidate material includes a light-transmitting substrate, and the material of the light-transmitting substrate is sapphire (Sapphire), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), gallium nitride (AlN), glass, diamond, CVD diamond, diamond-like carbon (Diamond-Like Carbon, DLC), spinel (spinel, MgAl ₂ O ₄ ), silicon oxide (SiO _X ), and lithium gallate (LiGaO ₂ ) may be used.

  The first conductive type semiconductor layer 11 and the second conductive type semiconductor layer 12 described above have different electrical properties, polarities or dopants in at least two portions, or a single layer or multiple layers of electron and hole semiconductor materials, respectively. ("Multi-layer" refers to two layers or more. The following is the same), and the electrical options are combinations of at least two of p-type, n-type and i-type There may be. The active layer 21 is located between the first conductive type semiconductor layer 11 and the second conductive type semiconductor layer 12, and is a region where electric energy and light energy are converted or induced and converted. Those that convert or induce electrical energy to light energy are, for example, light emitting diodes, liquid crystal display devices, and organic light emitting diodes, and those that convert or induce light energy to electrical energy are solar cells and photoelectric diodes. One or more elements included in the materials of the first conductive semiconductor layer 11, the active layer 21, and the second conductive semiconductor layer 12 described above are gallium (Ga), aluminum (Al), indium (In), One selected from the group consisting of arsenic (As), phosphorus (P), nitrogen (N), and silicon (Si).

  The light emitting device according to another embodiment of the present invention is a light emitting diode, and its emission spectrum is changed by adjusting a physical or chemical element of a semiconductor single layer or multilayer. Usable materials include, for example, aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, and zinc oxide (ZnO) series. The structure of the active layer (not shown) includes, for example, a single heterostructure (SH), a double heterostructure (double heterostructure, DH), a double-side double double heterostructure (double-heteroheterostructureD, Well (multi-quantum well, MQW). Furthermore, the logarithm of the quantum well may be adjusted to change the emission wavelength.

  In one embodiment of the present invention, a buffer layer (not shown) may be selectively included between the first conductive semiconductor layer 11 and the substrate (not shown). This buffer layer is between the two material systems and “translates” the substrate material system to the semiconductor system material system. In the structure of the light emitting diode, the buffer layer is a material layer for reducing lattice mismatch between two kinds of materials. On the other hand, the buffer layer may be a single layer, a multilayer, or a structure for bonding two kinds of materials or two separation structures. The material of the buffer layer may be selected from, for example, an organic material, an inorganic material, a metal, and a semiconductor, and the structure thereof is, for example, a reflective layer, a heat conductive layer, a conductive layer, an ohmic contact layer. A deformation resistant layer, a stress release layer, a bonding layer, a wavelength conversion layer, a mechanical fixing structure, and the like. In one embodiment, the material of the buffer layer may be AIN or GaN, and the formation method thereof may be sputter or atomic layer deposition (ALD).

  The second conductivity type semiconductor layer 12 may further selectively form a second conductivity type contact layer (not shown). The contact layer is provided on the side away from the active layer 21 of the second conductivity type semiconductor layer. Specifically, the second conductivity type contact layer may be an optical layer, an electrical layer, or a combination of both. The optical layer may change electromagnetic radiation or light rays from or to the active layer 21. Here, “change” is to change at least one optical characteristic of electromagnetic radiation or light, and this characteristic is frequency, wavelength, intensity, flux, efficiency, color temperature, rendering index, light irradiation field. (Light field) and angle of view may be included, but are not limited to those illustrated here. The electrical layer changes or produces a trend of changing the numerical value, density, and distribution of at least one of voltage, resistance, current, and capacitance between any pair of opposing sides of the second conductive type contact layer. It may be a thing. The constituent material of the second conductivity type contact layer is an oxide, a conductive oxide, a transparent oxide, an oxide having a transmittance of 50% or more, a metal, a metal having a relative light transmittance, and a transmittance of 50% or more. And at least one of a metal, an organic material, an inorganic material, a phosphor, a phosphor, a ceramic, a semiconductor, a semiconductor doped with impurities, and a semiconductor not doped with impurities. In one application, the material of the second conductivity type contact layer is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. In the case of a light transmitting metal, the thickness is about 0.005 μm to 0.6 μm.

  The specific embodiments of the present invention have been described above with reference to the drawings and characters, but the elements, implementation methods, design standards, and technical principles described or disclosed in the embodiments are conflicts, contradictions, or difficult to implement together. A person skilled in the art may arbitrarily refer to, exchange, formulate, coordinate, or merge as necessary.

  The above description is only a preferred embodiment of the present invention, and the scope of implementation of the present invention, the order of implementation, or the materials and manufacturing methods used are not limited thereto, and the claims of the present invention are not limited thereto. Any changes and modifications can be made by those skilled in the art based on the contents of the specification, and the protection scope of the present invention is based on the claims.

DESCRIPTION OF SYMBOLS 10 Light emitting element 11 1st conductivity type semiconductor layer 12 2nd conductivity type semiconductor layer 13 2nd electrode 14 1st insulating layer 15 1st electrode 1st layer 16 1st electrode 2nd layer 17 1st 2 insulating layer 18 first electrode pad 19 second electrode pad 20 passage 21 active layer 30 LED package 31 package structure 32 LED chip 33 pn contact surface 34 wire 35, 36 conductive frame 40 light bulb 41 lamp cover 42 lens 43 Mounting Plate 44 Light-Emitting Module 45 Lamp Socket 46 Radiating Fin 47 Joint 48 Electrical Terminal

Claims (10)

A light emitting device,
A semiconductor stack including a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, a plurality of concave grooves, and a flat base, wherein the plurality of concave grooves cross the active layer. and has, and the first conductive type semiconductor layer exposed to as bottom of the possess respectively, said flat platform is perforated over the surface, a portion of said plurality of grooves are the second conductivity type semiconductor layer A semiconductor stack , wherein the part of the plurality of grooves is located at an edge of the light emitting element, and the other part of the plurality of grooves is surrounded by the second conductive semiconductor layer ;
A first layer comprising a first conductive material and located on the upper surface of the flat table; and a second layer comprising a second conductive material and located on the first layer. A first electrode comprising:
A plurality of second electrodes respectively located at the bottom of each of the plurality of grooves,
A first insulating layer located in the plurality of concave grooves and on a part of the upper surface of the flat table, wherein the first insulating layer includes a plurality of passages; A first insulating layer exposing the second electrode;
A first electrode pad located on the first insulating layer and in contact with the first electrode;
A light-emitting element including a second electrode pad positioned on the plurality of second electrodes and in contact with the plurality of second electrodes. A light emitting device,
A semiconductor stack including a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, a plurality of concave grooves, and a flat base, wherein the plurality of concave grooves cross the active layer. Each having a bottom so as to expose the first conductive type semiconductor layer, the flat base having an upper surface, and a part of the plurality of concave grooves being the second conductive type semiconductor layer. A semiconductor stack, wherein the part of the plurality of grooves is located at an edge of the light emitting element, and the other part of the plurality of grooves is surrounded by the second conductive semiconductor layer;
A first insulating layer located in the plurality of grooves and on the upper surface of the flat table;
A first electrode first layer located on the upper surface of the flat platform;
A first electrode second layer covering the first electrode first layer and the first insulating layer;
A second insulating layer located on the first electrode second layer and including a spacing region exposing the first electrode second layer;
A first electrode pad located on the second insulating layer and in the spacing region of the second insulating layer;
And a second electrode pad located on the second insulating layer. A second conductive type contact layer located on the second conductive type semiconductor layer;
2. The light emitting device according to claim 1, wherein the second conductivity type contact layer includes at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide . A second insulating layer located between the first electrode and the first electrode pad;
The second insulating layer includes a plurality of spacing regions, the plurality of spacing regions are located on the plurality of passages of the first insulating layer, and the second electrode pad is the second insulating layer. The light emitting device according to claim 1 , wherein the plurality of gap regions and the plurality of passages of the first insulating layer are covered . Further seen including a second insulating layer located between the first electrode and the first electrode pad,
2. The light emitting device according to claim 1, wherein the second insulating layer includes a plurality of spacing regions, and the plurality of spacing regions are covered with the first electrode pads . 6. The light-emitting element according to claim 4 , wherein a partial region of the second insulating layer and the first insulating layer are in direct contact with each other at the edge of the light-emitting element.   The light emitting element according to claim 1, wherein the first conductive material and the second conductive material are different. The active layer can emit light;
The reflectance for the light beam of the first layer, the light emitting device according to claim 1 greater than the reflectance for the light beam of the second layer.   The light emitting element according to claim 1, wherein the first conductive material and / or the second conductive material includes a metal.   The light-emitting element according to claim 1, wherein the first layer and the first insulating layer of the first electrode are separated from each other.

Images