JP2014150188A5 - - Google Patents

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JP2014150188A5
JP2014150188A5 JP2013018742A JP2013018742A JP2014150188A5 JP 2014150188 A5 JP2014150188 A5 JP 2014150188A5 JP 2013018742 A JP2013018742 A JP 2013018742A JP 2013018742 A JP2013018742 A JP 2013018742A JP 2014150188 A5 JP2014150188 A5 JP 2014150188A5
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layer
light emitting
insulating layer
electrode
conductive material
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JP2013018742A
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JP2014150188A (en
JP6218386B2 (en
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Claims (10)

底部をそれぞれ有する複数の凹溝と、上表面を有する平たい台とを含む半導体積層と、
1の導電材料を含み、且つ前記平たい台の前記上表面の上に位置する第1の層と、第2の導電材料を含み、且つ前記第1の層の上に位置する第2の層とを含む第1の電極と、
前記複数の凹溝の各前記底部にそれぞれ位置する複数の第2の電極と、
前記複数の凹溝に位置し、且つ前記平たい台の前記上表面の一部の上に位置する第1の絶縁層であって、前記第1の絶縁層が複数の通路を含み、前記複数の第2の電極を露出する、第1の絶縁層と、
前記第1の絶縁層の上に位置し、且つ前記第1の電極と接触する第1の電極パッドと、
前記複数の第2の電極の上に位置し、且つ前記複数の第2の電極と接触する第2の電極パッドと、を含む発光素子。
A semiconductor stack comprising a plurality of concave grooves each having a bottom and a flat base having an upper surface;
It comprises a first conductive material and a first layer located on the flat platform the upper surface of the includes a second electrically conductive material and a second layer positioned on the first layer A first electrode comprising:
A plurality of second electrodes respectively located at the bottom of each of the plurality of grooves,
A first insulating layer located in the plurality of concave grooves and on a part of the upper surface of the flat table, wherein the first insulating layer includes a plurality of passages; A first insulating layer exposing the second electrode;
A first electrode pad located on the first insulating layer and in contact with the first electrode;
A light-emitting element including a second electrode pad positioned on the plurality of second electrodes and in contact with the plurality of second electrodes .
前記半導体積層の下に位置する基板を更に含む請求項1に記載の発光素子。   The light emitting device of claim 1, further comprising a substrate positioned under the semiconductor stack. 前記半導体積層は、第1の導電型半導体層、活性層及び第2の導電型半導体層を更に含み、前記活性層は光線を発することができ、前記複数の凹溝は前記活性層を横切っている請求項1に記載の発光素子。 The semiconductor stack further includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, wherein the active layer can emit light, and the plurality of concave grooves cross the active layer. The light emitting device according to claim 1. 前記第1の導電型半導体層は前記複数の凹溝の前記底部から露出され、且つ前記平たい台の前記上表面は前記第2の導電型半導体層の表面となる請求項3に記載の発光素子。 The first conductive type semiconductor layer is exposed from the bottom of the plurality of grooves, and the flat platform the upper surface of the light emitting device according to claim 3 comprising a second conductivity type semiconductor layer surface . 前記第1の電極と前記第1の電極パッドとの間に位置する第2の絶縁層を更に含む請求項に記載の発光素子。 The light emitting device according to claim 1 , further comprising a second insulating layer positioned between the first electrode and the first electrode pad. 前記第2の絶縁層の一部の領域と前記第1の絶縁層とは直接接触している請求項に記載の発光素子。 The light-emitting element according to claim 5 , wherein a partial region of the second insulating layer and the first insulating layer are in direct contact with each other. 前記第1の導電材料と前記第2の導電材料とは異なる請求項1に記載の発光素子。   The light emitting element according to claim 1, wherein the first conductive material and the second conductive material are different. 前記第1の層の前記光線に対する反射率は、前記第2の層の前記光線に対する反射率よりも大きい請求項3に記載の発光素子。   4. The light emitting device according to claim 3, wherein a reflectance of the first layer with respect to the light beam is larger than a reflectance of the second layer with respect to the light beam. 前記第1の導電材料及び/又は前記第2の導電材料は金属を含む請求項1に記載の発光素子。   The light emitting element according to claim 1, wherein the first conductive material and / or the second conductive material includes a metal. 前記第1の電極の前記第1の層と前記第1の絶縁層とは互いに離れている請求項1に記載の発光素子。 The first electrode of the first layer and the first light emitting device according to claim 1 which are separated from each other and the insulating layer.
JP2013018742A 2013-02-01 2013-02-01 Light emitting element Active JP6218386B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013018742A JP6218386B2 (en) 2013-02-01 2013-02-01 Light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013018742A JP6218386B2 (en) 2013-02-01 2013-02-01 Light emitting element

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017184264A Division JP6501845B2 (en) 2017-09-26 2017-09-26 Light emitting element

Publications (3)

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JP2014150188A JP2014150188A (en) 2014-08-21
JP2014150188A5 true JP2014150188A5 (en) 2016-03-10
JP6218386B2 JP6218386B2 (en) 2017-10-25

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Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
JP2007266396A (en) * 2006-03-29 2007-10-11 Showa Denko Kk Flip-chip type semiconductor light-emitting device, the flip-chip type semiconductor light-emitting device mounting method, flip-chip type semiconductor light-emitting device mounting structure, and light-emitting diode lamp
US8368100B2 (en) * 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
KR101252032B1 (en) * 2010-07-08 2013-04-10 삼성전자주식회사 Semiconductor light emitting device and method of manufacturing the same
JP5777879B2 (en) * 2010-12-27 2015-09-09 ローム株式会社 Light emitting device, light emitting device unit, and light emitting device package

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