JP2017163123A - Semiconductor light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which improves luminous efficiency by enhancing conductivity in a p-type electrode layer.SOLUTION: The semiconductor light-emitting element according to one embodiment of the present invention includes: a first semiconductor layer 30 having a first polarity; a second semiconductor layer 50 arranged separately from the first semiconductor layer 30 and having a second polarity; an active layer 40 arranged between the first semiconductor layer 30 and the second semiconductor layer 50; a transparent electrode 60 formed on the second semiconductor layer 50; a non-conductive reflection film 91 formed so as to cover a main surface of the transparent electrode 60 and having at least one via hole 91-3 formed therein; a reflection electrode 92 formed on the non-conductive reflection film 91; and a connection electrode 94 filling the inside of the via hole 91-3 and electrically connecting the reflection electrode 92 and the transparent electrode 60.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device that reduces electrical contact resistance and improves luminous efficiency.

  A light-emitting element is a pn junction diode whose characteristic is that electric energy is converted into light energy, which can be generated by a compound semiconductor such as a group III or group V on the periodic table, and the composition ratio of the compound semiconductor Various colors can be realized by adjusting.

  When a forward voltage is applied to the light emitting device, an electron in the n-type semiconductor layer and a hole in the p-type semiconductor layer are combined to form a conduction band and a valence band. The energy corresponding to the band gap energy of the band is diffused, but the energy is emitted mainly in the form of heat or light, and the light emitting element emits the energy in the form of light.

  For example, nitride semiconductors are of great interest in the field of development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light emitting element, a green light emitting element, and an ultraviolet (UV) light emitting element using a nitride semiconductor are commercially used and widely used.

  In recent years, improvement in luminous efficiency has been demanded as demand for highly efficient LEDs increases.

  The present invention has been made to solve such a problem, and an object of the present invention is to provide a semiconductor light emitting element that improves the light emission efficiency by increasing the conductivity in the p-type electrode layer.

  In order to solve the above-described problem, a semiconductor light emitting device according to an embodiment of the present invention includes a first semiconductor layer having a first polarity, and a second semiconductor layer disposed apart from the first semiconductor layer and having a second polarity. A semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a transparent electrode formed on the second semiconductor layer, and a main surface of the transparent electrode are covered A non-conductive reflective film formed with at least one via hole, a reflective electrode formed on the non-conductive reflective film, filled inside the via hole, and the reflective electrode and the reflective electrode And a connecting electrode that electrically connects the transparent electrode.

  The semiconductor light emitting device may further include an ohmic contact layer formed between the transparent electrode and the connection electrode.

  Here, the ohmic contact layer is a metal including at least one of nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), platinum (Pt), silver (Ag), and tungsten (W). Layers may be included.

  Here, the semiconductor light emitting device may further include a connection electrode formed between the transparent electrode and the connection electrode.

  Here, the connection electrode may further include an ohmic contact layer formed on a surface in contact with the transparent electrode.

  Here, the non-conductive reflective film has a reflectance of 80% or more with respect to light having a wavelength of 400 nm, corresponding to the case where the external lead frame is copper, gold, gold plating, or copper plating. Also good.

Here, the non-conductive reflective film may include a distributed Bragg reflector (DBR) that is repeatedly laminated by a combination of TiO ₂ and SiO ₂ .

  Here, in order to reflect the light in the ultraviolet region of the output light emitted from the active layer, the pair of distributed Bragg reflectors may have a thickness of 40 to 200 nm.

  Here, the transparent electrode may include ITO, ZnO, or a metal layer that transmits light in a wavelength region of 400 nm by 90% or more.

  Here, the transparent electrode has a thickness of 20 to 500 nm and is made of nickel (Ni), titanium (Ti), tungsten (W), silver (Ag), chromium (Cr), palladium (Pd) and molybdenum ( It may have at least one of Mo).

  Here, the transparent electrode may include a non-homogeneous surface formed on a non-conductive reflective film adhesion surface (a surface to which the non-conductive reflective film adheres).

  Here, the non-homogeneous surface may be formed on the non-conductive reflective film adhering surface excluding the connection electrode contact surface (the surface in contact with the connection electrode) of the transparent electrode.

Here, the non-conductive reflective film includes at least one of Si _x O _y , Ti _m O _n , Ta ₂ O _5, and MgF ₂ (where x, y, m, and n are positive integers). You may consist of a translucent substance.

  Here, the second semiconductor layer may include a non-homogeneous surface formed on a surface in contact with the transparent electrode.

  Here, the semiconductor light emitting device may further include an n-type electrode portion disposed on the second semiconductor layer.

  The n-type electrode portion includes an n-type electrode insulating layer, an n-type electrode filled in a plurality of via holes formed in the n-type electrode insulating layer, the n-type electrode insulating layer, and the n-type electrode. And an n-type bonding member disposed on the electrode.

  Here, the n-type electrode and the connection electrode may be arranged to form a matrix structure.

  Here, the n-type electrode and the connection electrode may have a meshing structure.

  According to an embodiment of the present invention, by forming an ohmic contact layer between a transparent electrode and a connection electrode that is formed by filling a plurality of via holes, the conductivity can be increased and the luminous efficiency can be maximized.

  In addition, according to an embodiment of the present invention, an excellent output light characteristic can be obtained by including a non-conductive reflective film having a high reflectance with respect to light in the ultraviolet region band. In addition, when the lead frame is plated with copper or gold, excellent output light characteristics can be obtained.

  Furthermore, according to an embodiment of the present invention, not only an ohmic contact is formed between the transparent electrode made of a conductive oxide and the connection electrode made of a metal material, but also the impure section during the manufacturing process is minimized. By restraining to a low, it is possible to realize excellent bonding between the transparent electrode and the connecting electrode.

1 is a cross-sectional view of a semiconductor light emitting device according to a first embodiment of the present invention. It is an expanded sectional view for demonstrating the connection structure of the connection electrode and transparent electrode in FIG. FIG. 2 is a plan view of the semiconductor light emitting element shown in FIG. 1. FIG. 6 is a cross-sectional view of a semiconductor light emitting device according to a second embodiment of the present invention. It is sectional drawing of the semiconductor light-emitting device by 3rd Embodiment of this invention. FIG. 6 is a cross-sectional view of a semiconductor light emitting device according to a fourth embodiment of the present invention. FIG. 6 is a cross-sectional view of a semiconductor light emitting device according to a fifth embodiment of the present invention. FIG. 8 is a plan view of the semiconductor light emitting element shown in FIG. 7.

  Hereinafter, a semiconductor light emitting device according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the present specification, the same or similar components are denoted by the same or similar reference numerals even in different embodiments, and redundant description is omitted.

  First, a semiconductor light emitting device according to a first embodiment of the present invention will be described with reference to FIGS.

  FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to a first embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view for explaining a connection structure between a connection electrode and a transparent electrode in FIG.

  As shown in FIGS. 1 and 2, the semiconductor light emitting device according to the first embodiment of the present invention includes a substrate 10, a buffer layer 20, a first semiconductor layer (n-type semiconductor) 30, an active layer 40, a second semiconductor layer ( p-type semiconductor) 50, transparent electrode 60, ohmic contact layer 71, n-type bonding pad 85, non-conductive reflective film 91 including via hole 91-3, and reflective electrode 92.

The substrate 10 is mainly composed of sapphire (Al ₂ O ₃ ), SiC, Si, GaN, glass, or the like. The substrate 10 may be finally removed when a flip light emitting element or a vertical light emitting element is formed (see FIG. 5).

  The buffer layer 20 is configured to couple the substrate 10 and the first semiconductor layer 30. The buffer layer 20 may be omitted.

  A first semiconductor layer 30 that is an n-type semiconductor is stacked on the buffer layer 20, and a second semiconductor layer 50 that is a p-type semiconductor is disposed apart from the first semiconductor layer 30. An active layer 40 that is a light emitting layer is disposed between the second semiconductor layer 50 and the second semiconductor layer 50.

  The first semiconductor layer 30 includes a non-homogeneous surface formed on a surface in contact with the active layer 40, and the second semiconductor layer 50 is configured to include a non-homogeneous surface formed on a surface in contact with the transparent electrode 60. Contact characteristics may be improved. In addition, a non-homogeneous surface is formed on the non-conductive reflective film adhering surface of the transparent electrode 60 (the surface on which the non-conductive reflective film 91 adheres). 94 may be formed on the non-conductive reflective film adhering surface except for the surface that contacts 94).

  The second semiconductor layer 50 and the active layer 40 are mesa-etched to expose a part of the first semiconductor layer 30. The order of mesa etching can be changed. An n-type bonding pad 85 is provided on the exposed first semiconductor layer 30.

  On the second semiconductor layer 50, a transparent electrode 60 for current diffusion to the second semiconductor layer 50 is formed. The transparent electrode 60 has a thickness of 20 to 500 nm and is made of nickel (Ni), titanium (Ti), tungsten (W), silver (Ag), chromium (Cr), palladium (Pd), and molybdenum (Mo). It may have at least one, and may be made of a substance such as ITO, ZnO, or a thin carbon structure.

A non-conductive reflective film 91 is formed on the transparent electrode 60. The non-conductive reflective film 91 is, for example, a translucent material including at least one of Si _x O _y , Ti _m O _n , Ta ₂ O _5, and MgF ₂ (where x, y, m, and n are positive integers). Single dielectric film composed of a conductive material, a translucent dielectric material, for example, a single distributed Bragg reflector made of a combination of SiO ₂ and TiO ₂ , a plurality of heterogeneous dielectric films, or a dielectric film Various structures are possible, such as a combination of 91-1 and distributed Bragg reflector 91-2. For example, the pair of distributed Bragg reflectors may be formed to a thickness of 40 to 200 nm, and the entire distributed Bragg reflector formed of a plurality of pairs may be formed to a thickness of 0.05 to 2 μm. Since the dielectric film 91-1 has a lower refractive index than the second semiconductor (p-type semiconductor, for example, GaN) layer 50, even this dielectric film alone can partially reflect light above the critical angle toward the substrate 10, and the distribution Since the Bragg reflector 91-2 can reflect a larger amount of light toward the substrate 10 and can be designed to a specific wavelength, it can effectively reflect the wavelength of the generated light. Here, the reflectance of such a layer is maximized when the thickness of each layer constituting the distributed Bragg reflector 91-2 is ¼ wavelength of the reflected light, and thus a pair of distributed Bragg reflectors 91-2. In consideration of the fact that the lead frame is made of copper, the thickness may be 40 to 200 nm. That is, in order to reflect the ultraviolet light in the 400 nm region band, the thickness of the layer that the ultraviolet light feels within the layer must be 100 nm, and by dividing this thickness by the refractive index value of the layer, The actual thickness of the layer is calculated. In the case of copper, the reflectance of ultraviolet light is only about 40%. Thereby, when the lead frame is made of copper or when the lead frame is plated with copper, there is a problem that the reflectivity of light in the ultraviolet light wavelength band becomes very low by the lead frame. Therefore, when the single-layer distributed Bragg reflector 91-2 is designed to be 20 to 100 nm to improve the reflection efficiency of the ultraviolet light, the reflectivity of the light finally toward the substrate 10 side is improved as a whole. . That is, the external lead frame can be designed to have a reflectance of 80% or more for light having a wavelength of 400 nm, corresponding to any of copper, gold, gold plating, and copper plating.

  On the other hand, an ohmic contact layer 71 is formed on the transparent electrode 60. The ohmic contact layer 71 has a function of forming an ohmic contact between the transparent electrode 60 and the connection electrode 94 to improve the current conductivity of the p-type electrode branch and improving the contact property between the transparent electrode 60 and the connection electrode 94. Have The configuration of the ohmic contact layer 71 will be described later in detail with reference to FIG.

  On the other hand, a plurality of via holes 91-3 are formed in the non-conductive reflective film 91, and a connecting electrode 94 that electrically connects the reflective electrode 92 and the transparent electrode 60 is formed inside the via hole 91-3. . The connecting electrode 94 is a component that is in direct contact with the ohmic contact layer 71 and is configured by filling an electrode material inside the via hole 91-3. As shown in FIG. 2, a plurality of connecting electrodes 94 are arranged in a matrix, thereby forming p-type electrode branches, thereby improving the light emission efficiency.

  On the other hand, a reflective electrode 92 is formed on the non-conductive reflective film 91. The reflective electrode 92 not only reflects the light irradiated from the active layer 40 but also serves as a p-type bonding pad (p-type electrode). The reflective electrode 92 is formed on the non-conductive reflective film 91 so as to be in contact with the connection electrode 94 using a metal such as aluminum (Al) or silver (Ag) having high reflectivity. The reflective electrode 92 may be formed using chromium (Cr), titanium (Ti), nickel (Ni), or an alloy thereof for stable electrical contact. The reflective electrode 92 is electrically connected to the outside, supplies holes to the second semiconductor layer (p-type semiconductor) 50, and reflects light that is not reflected by the non-conductive reflective film 91.

  The n-type bonding pad 85 may be formed on the first semiconductor layer 30 side from which the substrate 10 has been removed. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed. In the group III nitride semiconductor light emitting device, the first semiconductor layer 30 and the second semiconductor layer 50 are mainly made of GaN. The n-type bonding pad 85 may be directly formed on the first semiconductor layer 30 as shown in FIG. 1, and is formed as a component of the n-type electrode unit 80 of the fifth embodiment (see FIGS. 7 and 8). May be.

  The structure between the ohmic contact layer 71 and the connection electrode 94 in the semiconductor light emitting device according to the first embodiment of the present invention configured as described above will be described in detail with reference to FIG.

  2 is an enlarged cross-sectional view for explaining a connection structure between the connecting electrode and the transparent electrode in FIG. 1. More specifically, FIG. 2A is a first example of an ohmic contact layer, and FIG. FIG. 2B shows a second example of the ohmic contact layer, and FIG. 2C shows a third example of the ohmic contact layer.

  As shown in FIG. 2A, the inside of the via hole 91-3 formed in the non-conductive reflective film 91 is filled with an electrode material to form a connection electrode 94. The connection electrode 94 is connected to the upper stage. The reflective electrode 92 and the lower ohmic contact layer 71 are connected.

  The ohmic contact layer 71 is an ohmic metal layer containing at least one metal of nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), platinum (Pt), silver (Ag), and tungsten (W). And it has a function which raises an electric current conductivity by performing ohmic junction between the transparent electrode 60 and the connection electrode 94. FIG.

  Such an ohmic contact layer 71 may be formed only by etching a part of the transparent electrode 60 as shown in FIG. 2A, as shown in FIG. In addition, the transparent electrode 60 may be formed so as to protrude in addition to the etched portion, or the transparent electrode 60 may be formed on the transparent electrode 60 instead of being etched as shown in FIG. .

  Here, the etching of a part of the transparent electrode 60 may be performed during the etching for forming the via hole 91-3, or may be performed by direct etching of the transparent electrode 60.

  The structure of the p-type branch electrode and the n-type bonding pad 85 in the semiconductor light emitting device according to the first embodiment of the present invention will be described in detail with reference to FIG.

  FIG. 3 is a plan view of the semiconductor light emitting device shown in FIG. As shown in FIG. 3, the semiconductor light emitting device according to the first embodiment of the present invention is formed in a square shape in plan view, n-type bonding pads 85 are disposed at corners, and a plurality of portions are formed in the remaining portions. The connecting electrodes 94 filling the via holes 91-3 are arranged in a matrix. Thereby, the flow of current is improved and the light emission efficiency in the active layer 40 is improved.

  Next, a semiconductor light emitting device according to a second embodiment of the present invention will be described with reference to FIG.

  FIG. 4 is a cross-sectional view of a semiconductor light emitting device according to a second embodiment of the present invention. In the second embodiment, in order to simplify the description, the description of the same components as in the first embodiment is omitted.

  In the second embodiment, unlike the first embodiment, the height of the n-type bonding pad 85 and the height of the reflective electrode 92 can be made the same. Therefore, it can be attached to the lead frame by vertically falling down without using a bonding wire.

  As shown in FIG. 4, in the case of the vertical type, since no bonding wire is required, there is no optical loss due to the bonding wire. Furthermore, since the light irradiated to the lead frame side (especially, light in the ultraviolet region band) is reflected by the distributed Bragg reflector 91-2 of the non-conductive reflective film 91, the light output characteristics are improved as a whole.

  Next, a semiconductor light emitting device (flip type light emitting device) according to a third embodiment of the invention will be described with reference to FIG.

  FIG. 5 is a cross-sectional view of a semiconductor light emitting device according to a third embodiment of the present invention. As can be seen from FIG. 5, the third embodiment differs from the first and second embodiments in that the substrate 10 and the buffer layer 20 are etched. That is, the lowermost layer is the first semiconductor layer 30. In the third embodiment, as in the second embodiment, the height of the n-type bonding pad 85 and the height of the reflective electrode 92 can be made the same, so that the lead frame can be directly contacted in the opposite direction.

  Next, a semiconductor light emitting device (semiconductor light emitting device further including a connection electrode) according to a fourth embodiment of the invention will be described with reference to FIG.

  FIG. 6 is a cross-sectional view of a semiconductor light emitting device according to a fourth embodiment of the present invention. Unlike the first embodiment, the fourth embodiment may further include a connection electrode 70, and the connection electrode 70 may include an ohmic contact layer 71, or the connection electrode 70 may be the ohmic contact layer 71. Good. In the fourth embodiment, after forming the transparent electrode 60, the connection electrode 70 is formed, and the uppermost layer of the connection electrode 70 is the ohmic contact layer 71, so that the ohmic contact layer 71 is directly connected to the connecting electrode 94. It has a contact structure.

  Next, a semiconductor light emitting device according to a fifth embodiment of the present invention will be described with reference to FIGS.

  FIG. 7 is a sectional view of a semiconductor light emitting device according to a fifth embodiment of the present invention, and FIG. 8 is a plan view of the semiconductor light emitting device shown in FIG. In the fifth embodiment, in order to simplify the description, the description of the same components as those in the first to fourth embodiments is omitted.

  In the fifth embodiment, unlike the first to fourth embodiments, the n-type electrode 82 and the connection electrode 94 are arranged to engage with each other to improve the light emission efficiency. To this end, the semiconductor light emitting device according to the fifth embodiment of the present invention includes an n-type electrode unit 80 as shown in FIG. The n-type electrode unit 80 may be formed on the first semiconductor layer 30 side after etching the active layer 40, the second semiconductor layer 50, the non-conductive reflective film 91, and the like. The n-type electrode unit 80 includes an n-type electrode insulating layer 81, an n-type electrode 82 filled in a plurality of via holes formed in the n-type electrode insulating layer 81, an n-type electrode 82, and an n-type electrode insulating layer 81. An n-type bonding pad 85 may be included. Here, the n-type electrode 82 and the reflective electrode 92, which is a p-type electrode, have a structure of meshing with each other and a matrix structure.

  Referring to FIG. 7, in a state where the first semiconductor layer 30, the second semiconductor layer 50, the transparent electrode 60, the non-conductive reflective film 91, the reflective electrode 92, and the like are stacked, etching is performed on one side, An n-type electrode insulating layer 81 for insulation from the second semiconductor layer 50 is filled in the side and bottom surfaces of the etched holes. Next, the n-type electrode insulating layer 81 on the bottom surface is etched to form holes so as to be electrically connected to the outside and the first semiconductor layer 30 below the n-type electrode insulating layer 81, and then the n-type electrode 82 is filled to fill the n-type electrode. 82 and the first semiconductor layer 30 are electrically connected. Next, an n-type bonding pad 85 is formed thereon. By configuring the n-type electrode portion 80 in this way, a matrix arrangement in which the reflective electrode 92 and the n-type electrode 82, which are p-type electrodes, are engaged with each other is possible. This will be described later with reference to FIG.

  A structure of the p-type branch electrode and the n-type electrode unit 80 in the semiconductor light emitting device according to the fifth embodiment of the present invention will be described in more detail with reference to FIG.

  FIG. 8 is a plan view of the semiconductor light emitting device shown in FIG. As shown in FIG. 8, the semiconductor light emitting device according to the fifth embodiment of the present invention is formed in a square shape in plan view. The connection electrode 94 and the n-type electrode 82 filled in the via hole 91-3 are arranged in a matrix. Here, the connection electrode 94 and the n-type electrode 82 are arranged in a shape that meshes with each other (that is, a meshing structure). For example, the plurality of connection electrodes 94 and the plurality of n-type electrodes 82 each have a finger shape, and are disposed so as to engage with each other. As a result, current flows smoothly through a current path formed from the connection electrode 94 to the transparent electrode 60, the second semiconductor layer 50, the active layer 40, the first semiconductor layer 30, and the n-type electrode 82.

  On the other hand, a p-type bonding member 95 is provided on one side of the reflective electrode 92 disposed on the connection electrode 94, and p-type bonding is provided on one side of the n-type electrode 82 and the n-type electrode insulating layer 81. An n-type bonding pad 85 is provided apart from the member 95.

  According to an embodiment of the present invention having the above-described configuration, the ohmic contact layer is formed between the transparent electrode and the connection electrode formed to fill the plurality of via holes, thereby increasing conductivity and maximizing luminous efficiency. Can be

  In addition, according to an embodiment of the present invention, an excellent output light characteristic can be obtained by including a non-conductive reflective film having a high reflectance with respect to light in the ultraviolet region band. Even when the lead frame is plated with copper or gold, excellent output light characteristics can be obtained.

  Furthermore, according to an embodiment of the present invention, not only an ohmic contact is formed between the transparent electrode made of a conductive oxide and the connection electrode made of a metal material, but also the impure section during the manufacturing process is minimized. By restraining to a low, it is possible to realize excellent bonding between the transparent electrode and the connecting electrode.

  Such a semiconductor light emitting element is not limited to the configuration and method of the above-described embodiment, and can be variously modified by selectively combining all or a part of each embodiment.

DESCRIPTION OF SYMBOLS 10 Substrate 20 Buffer layer 30 1st semiconductor layer 40 Active layer 50 2nd semiconductor layer 60 Transparent electrode 70 Connection electrode 71 Ohmic contact layer 80 N type electrode part 81 N type electrode insulating layer 82 N type electrode 85 N type bonding pad 91 Non Conductive reflective film 91-1 Dielectric film 91-2 Distributed Bragg reflector 91-3 Via hole 92 Reflective electrode 94 Connecting electrode 95 P-type bonding member

In order to solve the above-described problem, a semiconductor light emitting device according to an embodiment of the present invention includes a first semiconductor layer having a first polarity, and a second semiconductor layer disposed apart from the first semiconductor layer and having a second polarity. A semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, a transparent electrode formed on the second semiconductor layer, and a main surface of the transparent electrode are covered A non-conductive reflective film formed with at least one via hole, a reflective electrode formed on the non-conductive reflective film, filled inside the via hole, and the reflective electrode and the reflective electrode A connection electrode formed between the transparent electrode and electrically connecting the reflective electrode and the transparent electrode ; and an ohmic contact layer formed between the transparent electrode and the connection electrode .

Claims (18)

A first semiconductor layer having a first polarity;
A second semiconductor layer disposed at a distance from the first semiconductor layer and having a second polarity;
An active layer disposed between the first semiconductor layer and the second semiconductor layer;
A transparent electrode formed on the second semiconductor layer;
A non-conductive reflective film formed so as to cover the main surface of the transparent electrode and having at least one via hole formed thereon;
A reflective electrode formed on the non-conductive reflective film;
A semiconductor light emitting device comprising: a connecting electrode which is filled inside the via hole and electrically connects the reflective electrode and the transparent electrode.   The semiconductor light emitting device of claim 1, further comprising an ohmic contact layer formed between the transparent electrode and the connection electrode.   The ohmic contact layer includes a metal layer including at least one of nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), platinum (Pt), silver (Ag), and tungsten (W). The semiconductor light-emitting device according to claim 2.   The semiconductor light emitting device according to claim 1, further comprising a connection electrode formed between the transparent electrode and the connection electrode.   The semiconductor light emitting device according to claim 4, wherein the connection electrode further includes an ohmic contact layer formed on a surface in contact with the transparent electrode.   The non-conductive reflective film has a reflectivity with respect to light having a wavelength of 400 nm of 80% or more, corresponding to the case where the external lead frame is copper, gold, gold plating, or copper plating. The semiconductor light emitting device according to claim 1. The semiconductor light emitting device according to claim 6, wherein the non-conductive reflective film includes a distributed Bragg reflector that is repeatedly laminated by a combination of TiO ₂ and SiO ₂ .   8. The semiconductor light emitting device according to claim 7, wherein a pair of the distributed Bragg reflectors has a thickness of 40 to 200 nm in order to reflect light in an ultraviolet region of output light emitted from the active layer.   2. The semiconductor light emitting device according to claim 1, wherein the transparent electrode includes a metal layer that transmits 90% or more of light in a wavelength region of ITO, ZnO, or 400 nm.   The transparent electrode has a thickness of 20 to 500 nm and is made of nickel (Ni), titanium (Ti), tungsten (W), silver (Ag), chromium (Cr), palladium (Pd), and molybdenum (Mo). The semiconductor light emitting device according to claim 1, comprising at least one.   The semiconductor light emitting element according to claim 1, wherein the transparent electrode includes a non-homogeneous surface formed on a non-conductive reflective film adhesion surface (a surface on which the non-conductive reflective film adheres).   The semiconductor light emitting device according to claim 11, wherein the non-homogeneous surface is formed on the non-conductive reflective film adhesion surface excluding a connection electrode contact surface (a surface in contact with the connection electrode) of the transparent electrode. element. The non-conductive reflective film includes at least one of Si _x O _y , Ti _m O _n , Ta ₂ O _5, and MgF ₂ (where x, y, m, and n are positive integers). The semiconductor light-emitting device according to claim 1, comprising a substance.   The semiconductor light emitting device according to claim 1, wherein the second semiconductor layer includes a non-homogeneous surface formed on a surface in contact with the transparent electrode.   The semiconductor light emitting device according to claim 1, further comprising an n-type electrode portion disposed on the first semiconductor layer. The n-type electrode part is
an n-type electrode insulating layer;
N-type electrodes respectively filled in a plurality of via holes formed in the n-type electrode insulating layer;
The semiconductor light emitting device according to claim 15, further comprising an n-type bonding member disposed on the n-type electrode insulating layer and the n-type electrode.   The semiconductor light emitting device according to claim 16, wherein the n-type electrode and the connection electrode are arranged to form a matrix structure.   The semiconductor light emitting device according to claim 17, wherein the n-type electrode and the connection electrode have a meshing structure.

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