CN106653972A - LED chip and method for manufacturing same - Google Patents
LED chip and method for manufacturing same Download PDFInfo
- Publication number
- CN106653972A CN106653972A CN201610988648.3A CN201610988648A CN106653972A CN 106653972 A CN106653972 A CN 106653972A CN 201610988648 A CN201610988648 A CN 201610988648A CN 106653972 A CN106653972 A CN 106653972A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- electrode
- led chip
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- 230000026267 regulation of growth Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000032696 parturition Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses an LED chip and a method for manufacturing the same. The LED chip includes a substrate; a first semiconductor layer disposed on the substrate, wherein the first semiconductor layer is provided with a groove in which a first electrode is disposed; a second semiconductor layer disposed on the first semiconductor layer; and a second electrode disposed on the second semiconductor layer. By the above method, the method can optimize the geometrical shapes of the electrodes, makes current distribution more uniform, solves a current overcrowding problem, and is simple in process and low in cost.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of LED chip and preparation method thereof.
Background technology
So far, at higher current densities its light efficiency can drop light emitting diode (light emitting diode, LED)
It is low to remain the generally acknowledged global problem of industry.It is empty when the luminous mechanism of LED chip is that electric current passes through the active area of LED chip
Cave and electron radiation recombination luminescence.LED chip is substantially transverse structure, and two electrodes of LED chip are in the same of LED chip
Side.Electric current horizontal mobility in n- and p- type limiting layers, it may appear that the problem of transverse current skewness.Electric current density
Also heat aggregation is accordingly produced where height, and as the electric current of input chip is increased, this tendency can constantly strengthen, so as to
Decline luminous efficiency, working life shortens.As shown in figure 1, LED chip 10 is transversary, p-type semiconductor (P-GaN) 11
Arrange over substrate 16 with n-type semiconductor (N-GaN) 12, InGaN materials are provided between p-type semiconductor 11 and n-type semiconductor 12
The active area 13 that material is constituted, p-type semiconductor 11 is provided with anelectrode 14, negative electrode 15 is provided with n-type semiconductor 12.Electric current exists
Horizontal mobility is unbalanced in p-type semiconductor 11 and n-type semiconductor 12, and electric current density is high on the corner and at close negative electrode,
Produce heat aggregation.
At present common single-chip LED generally adopts most commonly seen opaque circular electrode structure, the wherein shape of electrode
Shape directly determines the uniformity that chip current is distributed, and then the light extraction efficiency of impact chip, and this will cause LED luminous efficiencies to drop
The problems such as low, uneven, service life of generating heat declines.Because electric current is concentrated mainly on the subregion immediately below circular electrode,
And the distance of electrode to active area is limited, own Jing is reached in active area, i.e. active area when electric current is also not extending transversely abundant
Luminous region is concentrated mainly on the part active area of base part, here it is so-called current-crowding effect.For miniature LED
Its Pixel Dimensions of array are little, integrated level is high, and the impact that current-crowding effect is produced to it is more notable.
Current-crowding effect accelerates device degradation, reason to include：(1) mesa edge regional area produces excessive Joule heat,
Heat can not effectively spread, and cause the junction temperature of device higher.(2) regional area electric current density is big so that the electromigration of metal
At this locally than more serious, device degradation is accelerated.In addition this current-crowding effect can be more serious with device aging,
Vicious cycle is formed, finally cause component failure.Therefore, optimize the electrode structure of LED array, reduce current-crowding effect, it is right
It is extremely important in the performance for improving LED array.
The content of the invention
A kind of LED chip and preparation method thereof is embodiments provided, electrode geometry can be optimized, solve electricity
Stream congested problem, processing technology is simple, low cost.
The present invention provides a kind of LED chip, including：Substrate；The first semiconductor layer being arranged on substrate, wherein the first half
A groove is provided with conductor layer, first electrode is provided with groove；The second semiconductor layer on the first semiconductor layer is set；
The second electrode being arranged on the second semiconductor layer.
Wherein, groove runs through the first semiconductor layer.
Wherein, LED chip also includes active area, and active area is arranged between the first semiconductor layer and the second semiconductor layer.
Wherein, first electrode includes first layer metal nickel, second layer metal aluminum/copper and third layer metal ni au.
Wherein, thickness of the thickness of the first semiconductor layer more than the second semiconductor layer.
The present invention also provides a kind of manufacture method of LED chip, including：One substrate is provided, and in Grown first
Semiconductor layer, and a groove is set on the first semiconductor layer, first electrode is set in groove；Give birth on the first semiconductor layer
Long second semiconductor layer；Second electrode is formed on the second semiconductor layer.
Wherein, method includes：Active area is set between the first semiconductor layer and the second semiconductor layer.
Wherein, groove runs through the first semiconductor layer.
Wherein, a step of groove is arranged on the first semiconductor layer includes：Application response ion etching process etching the
Semi-conductor layer, forms groove.
Wherein, the step of first electrode is arranged in groove includes：First layer metal nickel is sputtered on groove；Plating second
Layer metallic aluminium/copper filling groove；Make third layer metal ni au.
By such scheme, the invention has the beneficial effects as follows：The LED chip of the present invention, including：Substrate；It is arranged on substrate
On the first semiconductor layer, wherein being provided with a groove on the first semiconductor layer, first electrode is provided with groove；It is arranged on
The second semiconductor layer in semi-conductor layer；The second electrode being arranged on the second semiconductor layer, can optimize geometric electrode shape
Shape, makes CURRENT DISTRIBUTION more uniform, solves the problems, such as current crowding, and processing technology is simple, low cost.
Description of the drawings
Technical scheme in order to be illustrated more clearly that the embodiment of the present invention, below will be to making needed for embodiment description
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, can be obtaining other according to these accompanying drawings
Accompanying drawing.Wherein：
Fig. 1 is the structural representation of the LED chip of prior art；
Fig. 2 is the structural representation of the LED chip of first embodiment of the invention；
Fig. 3 is the structural representation of the LED chip of second embodiment of the invention；
Fig. 4 is the structural representation of the LED chip of third embodiment of the invention；
Fig. 5 is the current diagram of the LED chip of first embodiment of the invention；
Fig. 6 is the schematic flow sheet of the manufacture method of the LED chip of the embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this
Embodiment in invention, it is every other that those of ordinary skill in the art are obtained under the premise of performing creative labour is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 2 is the structural representation of the LED chip of the embodiment of the present invention.As shown in Fig. 2 LED chip 20 includes：Substrate
21；The first semiconductor layer 22 on substrate 21 is set, wherein a groove 23 is provided with the first semiconductor layer 22, in groove 23
It is provided with first electrode 24；The second semiconductor layer 25 being arranged on the first semiconductor layer 22；It is arranged on the second semiconductor layer 25
On second electrode 26.Wherein, thickness of the thickness of the first semiconductor layer 22 more than the second semiconductor layer 25.Due to first electrode
24 extend in the first quasiconductor 22, shorten the transmission path of electric current, and first electrode 24 and the first quasiconductor 22 connect
Contacting surface product increase, namely the area increase of current direction first electrode 24, and then improve electricity of the electric current at first electrode 24
Stream crowding effect, makes CURRENT DISTRIBUTION more uniform.Because the resistivity in the first semiconductor layer 22 is less than the second semiconductor layer 25
In resistivity, the appropriate thickness for increasing by the first semiconductor layer 22 can also improve the current-crowding effect of the first semiconductor layer 22.
In embodiments of the present invention, the first semiconductor layer 22 is n-type GaN layer, and the second semiconductor layer 25 is p-type GaN layer.
When exposing n-type GaN layer from p-type GaN layer etching, continue to be etched into n-type GaN layer, i.e., groove 23 etched in n-type GaN layer,
Remaining technique is identical and makes electrode.First electrode 24 includes first layer metal nickel, second layer metal aluminum/copper and third layer gold
Category ni au.Second electrode 26 is metal ni au.
More specifically, referring to Fig. 3, LED chip 20 also includes active area 27, active area 27 is made up of InGaN materials, is arranged
Between the first semiconductor layer 22 and the second semiconductor layer 25.It is thin ITO to be provided between the quasiconductor 25 of second electrode 26 and second
Film layer 28, as current extending.The cushion 29 of GaN material composition is provided between first semiconductor layer 22 and substrate 21.
, referring to Fig. 4, in LED chip 30, groove 33 can also for the structure chart of the LED chip of another embodiment of the present invention
Through the first semiconductor layer 32.Accordingly, first electrode 34 runs through the first semiconductor layer 32.I.e. electric current can be in the first quasiconductor
The whole cross section of layer 32 flows directly into first electrode 34, so as to further shorten the transmission path of electric current, and further changes
It has been apt to current-crowding effect of the electric current at first electrode 24, has made CURRENT DISTRIBUTION more uniform.The other structures of LED chip 30 with
LED chip 20 is identical, will not be described here.
The embodiment of the present invention to the inside of the first semiconductor layer 22 by by first electrode 24, i.e. n-electrode, extending, Ke Yizhi
Passage between the second electrode 26 of the semiconductor layer 25 of first electrode 24 and second for connecing the first semiconductor layer 22 of increase, reduces electricity
The path of stream makes CURRENT DISTRIBUTION evenly；The geometry of first electrode 24 can be optimized, change current channel path, be reduced horizontal
Resistance, and then reduction electric current gathers around resistance, this method process is simple, cost is relatively low.The electric current effect specifically tested referring to Fig. 5, second
Electric current line is substantially vertically downward, without lateral transport, this is because ito thin film layer 28 in semiconductor layer 25 and active area 27
Current expansion very well, causes ito thin film layer 28 to be more or less the same with the interface voltage drop of the second semiconductor layer 25.And the first half lead
Principal carrier in body layer 22 is electronics, and is hole in the second semiconductor layer 25, and electron mobility is usually hole migration
Two orders of magnitude of rate, cause in the first semiconductor layer 22 electric current lateral transport than more significant.Because first electrode 24 is deep into
In first semiconductor layer 22 so that electric current is transmitted to first electrode 24 by only needing to lateral transport, it is not necessary to further passed
Transporting to the surface of the first semiconductor layer 22 could transmit to first electrode 24, shorten the transmission path of electric current, and cause electric current
It is evenly distributed much in the first semiconductor layer 22, solves the problems, such as current crowding.When making the LED chip, it is only necessary in system
When making first electrode, increase by one etching technics, processing technology is simple, beneficial to large-scale production, low cost.
As shown in fig. 6, the present invention also provides a kind of manufacture method of LED chip, including：
Step S10：One substrate is provided, and in the semiconductor layer of Grown first, and arrange on the first semiconductor layer
One groove, arranges first electrode in groove.
In step slo, the cushion of GaN material composition can be set between substrate and the first semiconductor layer.Giving birth to
Length is write as after the first semiconductor layer, and application response ion etching process etches the first semiconductor layer, forms groove.Groove can be with
Through the first semiconductor layer and buffer layer contacts, it is also possible to only default depth is reached in the first quasiconductor, with specific reference to need
Arrange, this is not restricted.When first electrode is set in groove, first layer metal nickel, then electricity are sputtered first on groove
Plating second layer metal aluminum/copper filling groove, finally makes third layer metal ni au.
Step S11：The second semiconductor layer is grown on the first semiconductor layer.
In step s 11, it is also provided between the first semiconductor layer and the second semiconductor layer by InGaN material structures
Into source region.Wherein, thickness of the thickness of the first semiconductor layer 22 more than the second semiconductor layer 25.
Step S12：Second electrode is formed on the second semiconductor layer.
Ito thin film layer wherein can also be set between the second semiconductor layer and second electrode used as current-diffusion layer.
The embodiment of the present invention can directly increase the first half and lead by the way that first electrode is extended to the inside of the first semiconductor layer
Passage between the second electrode of the first electrode of body layer and the second semiconductor layer；First electrode geometry can be optimized, contracted
Short electric current carrying pathway, reduces lateral resistance, and then reduces electric current and gather around resistance, and this method process is simple, cost is relatively low.
LED chip carries out packaging and testing after completing, its test electric current effect referring to Fig. 5, the second semiconductor layer and
Electric current line is substantially no lateral transport vertically downward in active area, this is because ito thin film layer current expansion is very well,
Ito thin film layer is caused to be more or less the same with the second semiconductor interface voltage drop.And the principal carrier in the first semiconductor layer
It is electronics, and is hole in the second semiconductor layer, electron mobility is usually two orders of magnitude of hole mobility, causes first
Electric current lateral transport is than more significant in semiconductor layer.Because first electrode is deep in the first semiconductor layer so that electric current is only needed
Want the lateral transport can transmit to first electrode, it is not necessary to further transmit to the surface of the first semiconductor layer could transmit to
First electrode, shortens the transmission path of electric current, and electric current is evenly distributed much in the first semiconductor layer, solves electricity
Stream congested problem.When making the LED chip, it is only necessary to when first electrode is made, increase by one etching technics, make work
Skill is simple, beneficial to large-scale production, low cost.
In sum, LED chip of the invention, including：Substrate；The first semiconductor layer being arranged on substrate, wherein the
A groove is provided with semi-conductor layer, first electrode is provided with groove；The second half leading on the first semiconductor layer is set
Body layer；The second electrode being arranged on the second semiconductor layer, can optimize electrode geometry, solve the problems, such as current crowding, system
Make process is simple, low cost.
Embodiments of the invention are the foregoing is only, the scope of the claims of the present invention is not thereby limited, it is every using this
Equivalent structure or equivalent flow conversion that bright description and accompanying drawing content are made, or directly or indirectly it is used in other related skills
Art field, is included within the scope of the present invention.
Claims (10)
1. a kind of LED chip, it is characterised in that the LED chip includes：
Substrate；
The first semiconductor layer over the substrate is set, wherein a groove is provided with first semiconductor layer, it is described recessed
First electrode is provided with groove；
The second semiconductor layer being arranged on first semiconductor layer；
The second electrode being arranged on second semiconductor layer.
2. LED chip according to claim 1, it is characterised in that the groove runs through first semiconductor layer.
3. LED chip according to claim 1, it is characterised in that the LED chip also includes active area, described active
Area is arranged between first semiconductor layer and second semiconductor layer.
4. LED chip according to claim 1, it is characterised in that the first electrode include first layer metal nickel, second
Layer metallic aluminium/copper and third layer metal ni au.
5. LED chip according to claim 1, it is characterised in that the thickness of first semiconductor layer is more than described the
The thickness of two semiconductor layers.
6. a kind of manufacture method of LED chip, it is characterised in that methods described includes：
One substrate, and growth regulation semi-conductor layer over the substrate are provided, and it is recessed that one is arranged on first semiconductor layer
Groove, in the groove first electrode is arranged；
The second semiconductor layer is grown on first semiconductor layer；
Second electrode is formed on second semiconductor layer.
7. method according to claim 6, it is characterised in that methods described includes：In first semiconductor layer and institute
State and active area is set between the second semiconductor layer.
8. method according to claim 6, it is characterised in that the groove runs through first semiconductor layer.
9. method according to claim 6, it is characterised in that described that a groove is set on first semiconductor layer
Step includes：
Application response ion etching process etches first semiconductor layer, forms the groove.
10. method according to claim 6, it is characterised in that described the step of first electrode is set in the groove
Including：
First layer metal nickel is sputtered on the groove；
Plating second layer metal aluminum/copper fills the groove；
Make third layer metal ni au.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2016104521331 | 2016-06-21 | ||
| CN201610452133.1A CN106025003A (en) | 2016-06-21 | 2016-06-21 | Led chip and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106653972A true CN106653972A (en) | 2017-05-10 |
Family
ID=57086453
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610452133.1A Pending CN106025003A (en) | 2016-06-21 | 2016-06-21 | Led chip and manufacturing method thereof |
| CN201610988648.3A Pending CN106653972A (en) | 2016-06-21 | 2016-11-09 | LED chip and method for manufacturing same |
| CN201621211463.3U Expired - Fee Related CN206497899U (en) | 2016-06-21 | 2016-11-09 | A kind of LED chip |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610452133.1A Pending CN106025003A (en) | 2016-06-21 | 2016-06-21 | Led chip and manufacturing method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621211463.3U Expired - Fee Related CN206497899U (en) | 2016-06-21 | 2016-11-09 | A kind of LED chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (3) | CN106025003A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670386A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106025003A (en) * | 2016-06-21 | 2016-10-12 | 深圳大学 | Led chip and manufacturing method thereof |
| CN108288664A (en) * | 2017-01-10 | 2018-07-17 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led chip |
| US11056614B2 (en) | 2017-01-10 | 2021-07-06 | PlayNitride Inc. | Micro light-emitting diode chip |
| CN115332415A (en) * | 2021-01-05 | 2022-11-11 | 朗明纳斯光电(厦门)有限公司 | Light emitting diode, light emitting device and projector thereof |
| WO2024185436A1 (en) * | 2023-03-03 | 2024-09-12 | ソニーグループ株式会社 | Surface-emitting laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364707A (en) * | 2011-11-28 | 2012-02-29 | 江苏新广联科技股份有限公司 | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging |
| CN103474542A (en) * | 2012-06-05 | 2013-12-25 | 华新丽华股份有限公司 | Light emitting diode and method for manufacturing the same |
| CN105470360A (en) * | 2014-08-29 | 2016-04-06 | 比亚迪股份有限公司 | Led chip and manufacturing method thereof |
| CN206497899U (en) * | 2016-06-21 | 2017-09-15 | 深圳大学 | A kind of LED chip |
-
2016
- 2016-06-21 CN CN201610452133.1A patent/CN106025003A/en active Pending
- 2016-11-09 CN CN201610988648.3A patent/CN106653972A/en active Pending
- 2016-11-09 CN CN201621211463.3U patent/CN206497899U/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102364707A (en) * | 2011-11-28 | 2012-02-29 | 江苏新广联科技股份有限公司 | Lighting emitting diode (LED) chip structure capable of improving current transmission clogging |
| CN103474542A (en) * | 2012-06-05 | 2013-12-25 | 华新丽华股份有限公司 | Light emitting diode and method for manufacturing the same |
| CN105470360A (en) * | 2014-08-29 | 2016-04-06 | 比亚迪股份有限公司 | Led chip and manufacturing method thereof |
| CN206497899U (en) * | 2016-06-21 | 2017-09-15 | 深圳大学 | A kind of LED chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112670386A (en) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
| CN112670386B (en) * | 2020-12-31 | 2022-09-20 | 深圳第三代半导体研究院 | Light emitting diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106025003A (en) | 2016-10-12 |
| CN206497899U (en) | 2017-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN206497899U (en) | A kind of LED chip | |
| CN204792880U (en) | Light -emitting diode | |
| WO2019085538A1 (en) | Led flip chip for improving current spreading uniformity, and manufacturing method therefor | |
| KR101832234B1 (en) | Leds using pec biasing technique and method for fabricating the same | |
| CN105789397A (en) | Face-up GaN LED chip and manufacturing method thereof | |
| CN204144307U (en) | A kind of LED chip | |
| CN102856454B (en) | LED epitaxial layer | |
| CN103618042A (en) | Semiconductor light-emitting diode chip | |
| CN101937958B (en) | Method for manufacturing gallium nitride based light-emitting diode with high light extracting efficiency | |
| CN203521454U (en) | Ohmic contact electrode structure of flip-chip LED chip and flip-chip LED chip | |
| CN104538523B (en) | A kind of semiconductor devices for improving current expansion | |
| US10249773B2 (en) | Light emitting diode and fabrication method thereof | |
| US9666779B2 (en) | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers | |
| US8823038B2 (en) | Semiconductor light-emitting structure | |
| US20150179880A1 (en) | Nitride semiconductor structure | |
| CN108417680B (en) | Semiconductor LED chip with high current diffusion efficiency | |
| US8461619B2 (en) | Light emitting diode chip and method of manufacturing the same | |
| CN103456856A (en) | Inversion LED chip and ohmic contact electrode structure of inversion LED chip | |
| CN102891232B (en) | Light emitting semiconductor device and manufacture method thereof | |
| CN205645856U (en) | Formal dress gaN LED chip | |
| CN102185053A (en) | Light-emitting diode and manufacturing method thereof | |
| CN201374348Y (en) | Light emitting diode with current barrier layer | |
| CN105449061B (en) | LED crystal particle and its manufacture method | |
| KR20110044094A (en) | Semiconductor light-emitting device | |
| CN111525009B (en) | Semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170510 |