JP5125795B2 - Semiconductor light emitting element and light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting element, and more particularly to a semiconductor light emitting element configured by forming a pair of electrodes on the same surface side of a semiconductor light emitting element and a light emitting device on which the semiconductor light emitting element is mounted.

  Conventionally, various research and development have been conducted on the shape and arrangement of each electrode in order to achieve high output in a semiconductor light emitting device having a laminated structure of semiconductor layers (for example, see Patent Documents 1 to 3). ). An example is shown in FIG. The LED chip shown in FIG. 8 is provided with an n-side electrode and a p-side electrode on the same surface side, and the n-side electrode power feeding portion 51 and the p-side electrode power feeding portion 52 are alternately arranged in the horizontal direction. A total of three electrodes are arranged at equal distances in the vertical direction and three in total in the vertical direction to form a matrix electrode arrangement configuration. In addition, it is known to mount a semiconductor light emitting element on a submount having an electrode pattern formed on the surface so as to be conductive (see, for example, Patent Document 4).

JP 2002-319705 A JP 2004-47988 A JP 2006-19347 A JP 2000-174348 A

  However, as shown in FIG. 8, the current flowing through the element cannot be made sufficiently uniform by simply arranging the n-side electrode feeding portion and the p-side electrode feeding portion at equal intervals. Further, when the p electrode and the n electrode are formed on the same surface in this way, one electrode needs to be formed on the surface of the semiconductor layer exposed by removing a part of the light emitting region. For this reason, if the electrode area is simply increased to make the current distribution uniform, the light emission area is reduced, the output of the entire device is lowered, and the light emission efficiency is also lowered.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a highly efficient semiconductor light emitting device in which a forward voltage is reduced by reducing a potential difference in the device.

In order to solve the above-described problems, the semiconductor light emitting device of the present invention is a substantially square semiconductor light emitting device having at least a first side and a second side adjacent to the first side in a plan view. A first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a plurality of first electrodes provided on the first conductivity type semiconductor layer, and a second electrode provided on the second conductivity type semiconductor layer; The first conductive semiconductor layer, the second conductive semiconductor layer, and the second electrode surround the first electrode, and the first electrode and the second electrode are provided on the same surface side, The first electrode has a long shape along the first side, and has a lattice shape of x columns (x ≧ 2) along the first side and y rows (y> x) along the second side. It is arranged.

In addition to the above-described configuration, the semiconductor light-emitting device of the present invention can be combined with the following configurations. A plurality of first electrodes, the distance D ₁ of the between the first electrode in the row direction, are arranged so as to be greater than the distance D ₂ between the first electrodes in the column direction. The plurality of first electrodes are arranged at equal intervals in the row direction, the distance D ₁ of the between the first electrode, the second conductive semiconductor layer from the nearest first electrode to the second side second window side greater than the distance D ₃ to the end. Distance _{D 1} is a distance equal to or less than 2 times the _{D 3.} The plurality of first electrodes are arranged at equal intervals in the column direction, the distance D ₂ between the first electrode and the second conductive semiconductor layer terminating in the first window side nearest the first electrode to the first side equal to or smaller than the distance D ₄ to. The plurality of first electrodes have the same size and shape. The first electrode has a substantially circular shape that is long along the first side . The first conductivity type semiconductor layer is an n-type gallium nitride compound semiconductor layer, and the second conductivity type semiconductor layer is a p-type gallium nitride compound semiconductor layer. The semiconductor light emitting device is a flip chip device. The first electrodes are arranged in a grid of two columns along the first side and three rows along the second side.

  Furthermore, a light-emitting device having such a semiconductor light-emitting element and a wiring board on which the semiconductor light-emitting element is mounted can be provided. The wiring substrate has a first wiring electrode connected to the first electrode of the semiconductor light emitting element, and a second wiring electrode connected to the second electrode. The first and second wiring electrodes are formed of the semiconductor light emitting element. The shape extends linearly in the length direction of the second side. The semiconductor light-emitting element has a light-emitting layer, and can be provided in order of the second conductive semiconductor layer, the light-emitting layer, and the first conductive semiconductor layer from the wiring board side, and the second wiring electrode connected to the second electrode. At least a part of the light emitting element can be provided outside the semiconductor light emitting element with a width wider than that of the first wiring electrode in plan view.

  According to the present invention, a forward voltage can be reduced by reducing a potential difference in the element, and a semiconductor light emitting element with improved luminous efficiency can be obtained.

  Embodiments of a semiconductor light emitting device according to the present invention will be described below in detail with reference to the drawings.

[Embodiment 1]
As shown in FIGS. 1 and 2, the semiconductor light emitting device 100 of this embodiment includes a first conductive semiconductor layer 2, a light emitting layer 10, and a second conductive semiconductor layer 3 on a translucent substrate 1. They are stacked in order. A first electrode 4 is formed on the first conductivity type semiconductor layer 2, and a second electrode 5 is formed on the second conductivity type semiconductor layer 3. The semiconductor light emitting device 100 is substantially square in plan view. Further, the second conductive type semiconductor layer 3 and the light emitting layer 10 and a part of the first conductive type semiconductor layer 2 are removed, and the surface of the first conductive type semiconductor layer 2 is exposed. One electrode 4 is formed. That is, the first electrode 4 and the second electrode 5 are arranged on the same surface side of the semiconductor layer. The second electrode 5 is arranged so as to surround the first electrode 4, and the first electrode 4 has a long shape along the first side 11 of the element, and extends along the first side 11. Two rows are arranged in a three-row lattice pattern along the second side 12 adjacent to the first side.

  Thus, the first electrodes 4 are arranged in a grid of x columns (x ≧ 2) along the first side 11 and y rows (y> x) along the second side 12. The shape of the first electrode 4 is a shape in which a longitudinal direction and a short direction exist, and the longitudinal direction is along the first side 11. That is, the first electrode 4 is long in the row direction. By arranging such first electrodes 4 such that there are more rows along the second side 12 than columns along the first side 11, the current can be suitably spread, and the current of the entire element can be increased. The distribution can be made uniform, the potential difference can be reduced, and the forward voltage can be reduced. Moreover, by setting the first electrode in such a shape and arrangement, the current distribution can be made uniform without the need for an extending portion, and the light emission area can be widened. Therefore, by adopting the above-described configuration, it is possible to reduce the bias of the current distribution and make the light emission intensity distribution uniform, and to suppress the increase in the area of the first electrode to ensure a wide light emitting area and reduce the forward voltage. In addition, the luminous efficiency can be improved.

It is preferable that the first electrode 4 is disposed almost uniformly over the entire element. As a result, a current can flow uniformly throughout the device, and the first electrode can be provided with a conductive member such as a bump to be an external electrode connection portion that is connected to an external electrode. Can be reduced. Rather than disposing the first electrodes 4 at equal intervals, the distance between the first electrodes in the longitudinal direction of the first electrode 4 is larger than the distance between the other first electrodes as in the element of FIG. It is preferable to do. In other words, the distance D ₁ of the between the first electrode in the row direction of the grating arrangement, it is preferable to arrange so as to be larger than the distance D ₂ between the first electrodes in the column direction.

Further, the first electrode, the distance D ₁ of the between the first electrode in the row direction, the distance D ₃ from the nearest first electrode 4a to the second side 12 to the second conductive type semiconductor layer 3 end of the second window side It is preferable to arrange so as to be larger than the above. This is due to the following reason. That is, it is considered that the range in which the current efficiently spreads in the light emitting region including the light emitting layer in the element is substantially constant from the end of the first electrode. The current density tends to be small in a region outside this range, and the current tends to concentrate in the overlapping region. Furthermore, the current tends to concentrate even when the element outer edge termination portion of the semiconductor layer is included in the range of such current spread. For this reason, by setting it as the above-mentioned structure, it can be set as the structure where the range of the current spread of the adjacent 1st electrodes 4a and 4b does not overlap easily. Moreover, since she can region of low current density between the distance between the first electrode is too distant electrodes, the distance D ₁ is preferably set to less than twice the distance D _3. In the column direction, the plurality of first electrodes 4 are preferably arranged at equal intervals, and the distance D ₂ between the first electrodes shown in FIG. 1 is from the first electrode 4a closest to the first side 11 to the first electrode 4a. it is possible to reduce substantially the same as or than the distance D ₄ up to the second conductive type semiconductor layer 3 end of one side end.

Furthermore, as shown in FIG. 1, the distance D ₁ of the between the first electrode 4a and 4b that are adjacent in the length direction of the first side 11, the distance between the first electrode and the first side 11 and / or the first electrode And the second side 12 can be arranged so as to be larger than the distance between them. Since current flows more easily between the first electrodes than in other portions, such an arrangement makes it possible to supply current uniformly to the light emitting layer 10 over the entire surface of the light emitting element. In addition, as shown in FIG. 1, in the semiconductor light emitting device, the first side 11 and the second side 12 are preferably substantially equal in length. It is preferable to set the number close to. In this embodiment, the number obtained by adding 1 to the number of columns is used as the number of rows.

  The first electrode has a shape having a longitudinal direction along the first side of the element, and preferably has a longitudinal direction in a direction parallel to the first side 11. It is preferable that the longitudinal directions of the first electrodes are all the same. Furthermore, the shape and size are preferably the same for all the first electrodes. Further, the shape may be an oval shape such as a substantially circular shape, an elliptical shape, or an oval shape. The first electrode is provided with a conductive member such as a wire or a bump, and is connected to the external electrode through the first electrode. At this time, the conductive member may extend in a specific direction. For example, this tendency tends to occur when ultrasonic bonding is used. Therefore, as in the present embodiment, by forming each first electrode in a shape that is long in the same direction, it is possible to absorb the shift at the time of joining the conductive members without increasing the electrode area more than necessary. For this reason, it is preferable to set the length of the first electrode in the longitudinal direction in consideration of the shift at the time of joining the conductive members. For example, when the conductive member is provided in a substantially circular shape in plan view, the length of the first electrode in the short direction corresponds to the diameter of the conductive member, and the length in the short direction is equal to that at the time of bonding. The length in the longitudinal direction can be determined by adding a shift.

  Hereinafter, each configuration in each embodiment of the present invention will be described in detail.

(First electrode 4, second electrode 5)
The first electrode 4 is provided on the surface of the first conductive semiconductor layer 2, and the second electrode 5 is provided on the second conductive semiconductor layer 3 so as to surround the first electrode 4. In particular, when the second conductivity type layer 3 is a p-type gallium nitride compound semiconductor layer, the current is difficult to spread in the in-plane direction, and therefore the second electrode 5 is provided on almost the entire surface of the second conductivity type layer 3. preferable. For example, the resistance value of a p-type GaN layer doped with Mg is about 0.1 Ω · mm to 10 Ω · mm. The second electrode 5 can further be provided with a connection electrode for connecting to a conductive member such as a bump. The first electrode 4 and the second electrode 5 are formed by an evaporation method or a sputtering method after the first conductivity type layer 2 is exposed by a method such as etching. In the present embodiment, the material of the second electrode 5 is a material that reflects light from the light emitting element toward the light transmissive substrate of the light emitting element. Examples of such materials include Ag, Al, and Rh. In addition, a transparent electrode such as an oxide conductive film such as ITO (complex oxide of indium (In) and tin (Sn)) and ZnO, and a metal thin film such as Ni / Au is formed on the entire surface of the p-type semiconductor layer. Can be formed.

(First conductivity type semiconductor layer 2, second conductivity type semiconductor layer 3)
Examples of the first and second conductive semiconductor layers include those using GaN and other semiconductors, such as gallium nitride compound semiconductors (In _X Al _Y Ga _1-XY N, 0 ≦ X, Preferred examples include 0 ≦ Y and X + Y ≦ 1). Examples of the structure of the semiconductor layer include a homostructure having a MIS junction, a PIN junction, a pn junction, etc., a heterostructure, or a double hetero configuration. Various emission wavelengths can be selected depending on the semiconductor layer material and the mixed crystal ratio. A structure having a single quantum well structure or a multiple quantum well structure in which a semiconductor active layer is formed in a thin film that generates a quantum effect between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer may be used. When a nitride semiconductor is used, a material such as sapphire, spinel, SiC, Si, ZnO or the like is preferably used for the growth substrate of the semiconductor layer. In order to form a nitride semiconductor with good crystallinity with high productivity It is preferable to use a sapphire substrate. In the first and second conductivity type semiconductor layers, the first conductivity type refers to p-type or n-type, and the second conductivity type refers to a conductivity type different from the first conductivity type, that is, n-type or p-type. Show. Preferably, the first conductivity type semiconductor layer is an n-type gallium nitride compound semiconductor layer, and the second conductivity type semiconductor layer is a p-type gallium nitride compound semiconductor layer. These semiconductor layers can be converted into n-type or p-type semiconductor layers by doping with n-type or p-type impurities.

(Protective film)
An insulating protective film can also be formed on the semiconductor light emitting element. FIG. 3 shows an example of a semiconductor light emitting device in which a protective film 30 having an opening is formed on each electrode. 3 (a) is a front view, FIG. 3 (b) is a rear view, FIG. 3 (c) is a left side view, FIG. 3 (d) is a right side view, FIG. 3 (e) is a plan view, and FIG. f) shows bottom views respectively. In the rear view shown in FIG. 3B, each electrode can be seen through the translucent substrate 1. In the element shown in FIG. 3, a full-surface electrode that covers substantially the entire surface of the second conductivity type semiconductor layer and a cover electrode that covers the full-surface electrode are formed as the second electrode. 3 has a substantially circular opening on each of the first electrode 4 and the second electrode 5, and the surface of the electrode is exposed at each opening. A conductive member such as a bump is formed on the surface of each electrode exposed in the opening of the protective film 30, and is connected to the conductor wiring of the package and energized. The shape of the opening of the protective film is not particularly limited as long as the shape and size can form a conductive member such as a bump on the surface of each electrode. As shown in FIG. 3A, when the shape corresponds to the shape of the conductive member formed on the electrode, an increase in the area of the opening can be suppressed, and the upper surface of the element is suitably protected. Can do. In addition, when the opening on the first electrode and the opening on the second electrode have independent shapes as described above, a short circuit between the electrodes due to misalignment of the conductive member can be prevented, and an element that is difficult to be short-circuited. And can. In addition, by arranging the openings on the second electrode in this way, the bumps can be arranged almost uniformly over the entire element, so that the thermal resistance can be reduced.

(Semiconductor light emitting device)
As the semiconductor light emitting element, a rectangular element can be used in plan view, and the first electrodes are arranged in a grid pattern along the plan view shape of the element. The effect of the present invention is easily obtained when the first side of the element and the second side adjacent thereto are approximately the same length. Preferably it is substantially square. In the present embodiment, the semiconductor light-emitting element is preferably a flip-chip mounting element that extracts light from the translucent substrate side, that is, the surface facing the electrode forming surface. In the case of an element for flip chip mounting, the thickness of the second electrode is increased or the connection region between the second electrode and the external electrode is compared with an element for face-up mounting that extracts light from the electrode formation surface. Can be evenly arranged, and it is easy to spread the current uniformly over the entire second conductive semiconductor layer. For this reason, the current distribution of the entire element can be made uniform by the arrangement of the first electrode, and the effects of the present invention can be easily obtained.

[Embodiment 2]
In the semiconductor light emitting device shown in FIG. 4, the first electrodes 4 are arranged in a lattice form in three columns along the first side 11 and in four rows along the second side 12. Other configurations can be the same as those in the first embodiment. Thus, the number and arrangement of the first electrodes 4 can be changed according to the size of the first electrodes, the size of the elements, and the like. In addition, it is preferable to arrange the first electrodes at equal intervals in the row direction as described above.

[Embodiment 3]
The semiconductor light emitting device shown in FIG. 5 is obtained by flip-chip mounting the semiconductor light emitting element 100 shown in FIG. In the light-emitting device shown in FIG. 5, the first electrode and the second electrode of the light-emitting element 100 are connected to the first wiring electrode 50a and the second wiring electrode 50b on the surface of the substrate 51 of the wiring board by the connection portions 13a and 13b, respectively. . As the connection portions 13a and 13b, conductive members such as bumps can be used.

  FIG. 6 shows patterns of the wiring electrodes 50a and 50b of the wiring board according to the light emitting device of FIG. As shown in FIGS. 5 and 6, the first wiring electrode 50a extends linearly along the length of the second side 12 of the semiconductor light emitting element along the arrangement of the first electrodes, and the second wiring electrode 50b. Are also linearly extended in the same direction as the first wiring electrode 50a. Thus, by making the path through which the current of the wiring electrode flows substantially linear, a light emitting device having a lower wiring resistance than that provided with a complicated wiring electrode can be obtained. In addition, since each wiring electrode has a shape that is long in the length direction of the second side 12 along the arrangement of the first electrodes, the area of the first wiring electrode is reduced and the area of the second wiring electrode is increased. Can do. By using such a wiring electrode, a large number of connection portions between the p electrode and the wiring electrode can be provided, and in particular, a p-type gallium nitride compound semiconductor in which current is less diffused than an n-type gallium nitride compound semiconductor layer. It is preferable when the layer is a second conductivity type semiconductor layer. In the present embodiment, since the first electrodes of the light emitting elements are arranged in a lattice shape in which the number in the second side direction is larger than the number in the first side direction, such a wiring electrode can be obtained.

  In the case where the light emitting layer 10 is provided directly below the second electrode 5 as in the light emitting element shown in FIG. 2, as shown in FIG. 5, the connecting portion 13b that connects the second electrode and the second wiring electrode 50b. However, it is preferable to be disposed outside the element with respect to at least the connection portion 13a that connects the first electrode and the first wiring electrode 50a. As a result, the second wiring electrode 50b joined to the connection portion 13b can be provided outside the element relative to the first wiring electrode 50a. Therefore, the width of the second wiring electrode 50b can be widened, and the exhaust heat effect can be obtained. Can be increased. In other words, the wiring electrode joined to the element electrode inside the element is limited to a certain width or less depending on the element structure. However, if the wiring electrode is as described above, the wiring electrode can be extended to the outside of the element in a plan view. Therefore, it can be made wider than the wiring electrode inside the element. Specifically, as shown in FIGS. 5 and 6, the width of the second wiring electrode 50b outside the element can be made wider than the width of the second wiring electrode 50b and the first wiring electrode 50a inside the element. .

  In the case of the light emitting device as shown in FIG. 2, the second electrode 5 is closer to the light emitting layer 10 than the first electrode 4, and typically, the second conductivity type semiconductor layer 3 is p-type GaN-based. Since a layer is often used, the second electrode 5 side tends to generate heat. For this reason, in the case of such an element structure, there is a tendency that a second wiring electrode having a high exhaust heat effect is particularly demanded. Therefore, as described above, a pattern in which the second wiring electrode is provided outside the element is preferable. . Only one of such a pattern in which the second wiring electrode is provided outside the element and a pattern in which each wiring electrode is extended substantially linearly can be adopted. However, the semiconductor light emitting device shown in FIG. Thus, it is more preferable to use a pattern that employs both.

  Further, as shown in FIG. 5, the second wiring electrode is wide enough to be exposed from the semiconductor light emitting element 100 in plan view, so that light from the end face of the light emitting element is reflected by the wiring electrode. Thus, a light emitting device with high light extraction efficiency can be obtained. When a plurality of elements are arranged, if such a wide second wiring electrode is provided between the elements, the wiring electrode can be provided so as to cover the adjacent elements. The light from the end face can be reflected, which is preferable.

  In addition, the connection part for electrically connecting the electrode of the element and the wiring electrode can be arranged in an arbitrary size at an arbitrary position. However, if the connection part is uniformly arranged on the entire element, the thermal resistance Can be reduced. Specifically, as shown in FIG. 5, the connection portions 13 a are arranged corresponding to the first electrodes 4, and the connection portions 13 b of the second electrodes 5 are connected to the first side in the length direction. By arranging two rows in the lengthwise direction in a grid shape, which is one more than the first electrode 4, the connection portion 13a of the first electrode 4 and the connection portion 13b of the second electrode 5 are arranged on the entire element. It can be arranged uniformly.

  Note that the connecting portions 13a and 13b in FIG. 5 schematically show positions where the electrodes of the light emitting element 100 and the wiring electrodes of the wiring board are connected. For example, as shown in FIG. A protective film 30 having a region opened can be provided, and a bump can be provided in the opening to connect the electrode of the element and the wiring electrode.

(Wiring board)
Au, Al, or the like is used as the metal for the wiring electrode. A silver-white metal with high reflectivity such as Al is preferable because light from the light-emitting element is reflected in a direction opposite to the wiring substrate, and the light extraction efficiency of the light-emitting device is improved. Here, the metal used as the material of the wiring electrode is preferably selected in consideration of good adhesion between metals, so-called wettability and the like. For example, when bonding to an electrode of a semiconductor light emitting element containing Au via an Au bump, the wiring electrode is made of Au or an alloy containing Au.

  In the wiring substrate shown in FIGS. 5 and 6, the first wiring electrode 50 a is provided at a position facing the first electrode of the light emitting element 100. Similarly, the second wiring electrode 50 b is connected to the second electrode 5. It is provided in the area | region which opposes. Here, since the edge part of a semiconductor layer is exposed from light-shielding members, such as an electrode, in the light emitting element as shown in FIG. 2, the light in an element can be radiate | emitted also from such a semiconductor layer edge part. Specifically, it is conceivable that light leaks from the end portion of the element or the end portion of the semiconductor layer between the first electrode and the second electrode. For this reason, by providing a wiring electrode on the surface of the wiring board facing such a region, the leaked light can be reflected by the wiring electrode, and the luminous flux of the light emitting device can be further increased. For example, in the light emitting device shown in FIG. 5, the first wiring electrode 50 a bonded to the first electrode of the light emitting element 100 is provided to extend to a position facing the second electrode. Such a configuration is highly effective particularly when a material that easily absorbs light from a light emitting element such as aluminum nitride is used as the base material of the wiring board.

Example 1
As Example 1, a semiconductor light emitting element having the same structure as that shown in FIG. 1 is used. The semiconductor light emitting device according to this example is a substantially square device in a plan view having one side of about 1 mm. A gallium nitride compound semiconductor is stacked on the sapphire substrate, and an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer are stacked in this order from the substrate side. A sapphire substrate is exposed at the outer periphery of the element. On the surface of the p-type semiconductor layer, as a second electrode, a full-surface electrode that reflects light from the light-emitting layer, and a cover electrode and a pad electrode that cover the electrode are provided, and the n-type semiconductor exposed from the p-type semiconductor layer On the surface of the layer, n electrodes are arranged as a first electrode in a lattice pattern of two columns along the first side and three rows along the second side. The first electrodes have a substantially circular shape that is long in the same direction. Specifically, the first electrodes have a shape in which two semicircular shapes are connected by line segments. As materials for each electrode, the p-side full-surface electrode is Ni / Ag / Ni / Ti / Pt, the cover electrode is Au, the pad electrode is Au / Rh / Pt / Au / Ni, and the n-electrode is Al—Si—. Cu / W / Pt / Au / Ni are used respectively. Note that Ni / Ag / Ni / Ti / Pt indicates that Ni, Ag, Ni, Ti, and Pt are stacked in this order from the semiconductor layer side. When a forward voltage is obtained by simulation for such a semiconductor light emitting device, it is estimated to be about 3.4V. The element of the present embodiment can be a highly efficient element with a low forward voltage by arranging the first electrodes in a grid of two columns and three rows along the side of the element.

(Example 2)
In addition, the light emitting device of Example 2 in which the same elements as those in Example 1 except that the p-side pad electrode was omitted and the cover electrode was changed to Ni / Au / Ni were arranged side by side and flip-chip mounted on the wiring board. As shown in FIG. The first wiring electrode 50a and the second wiring electrode 50b have substantially the same shapes as those shown in FIGS. 5 and 6, but in the light emitting device shown in FIG. 7, the third wiring is used to connect two light emitting elements in series. An electrode 50c is provided. Similarly to the first and second wiring electrodes 50a and 50b, the third wiring electrode 50c extends substantially linearly in the same direction. In FIG. 7, the left electrode side is connected to the first electrode, On the element side, it is connected to the second electrode. Since the portion connected to the second electrode of the third wiring electrode 50c is wider than the other wiring portion to cover the surface of the base between the two elements, the light from the two element end faces is reflected. And a light-emitting device with high light extraction efficiency can be obtained. When two such light emitting devices are arranged, the forward voltage is about 14.1 V and the luminous flux is about 476.8 lm.

FIG. 1 is a schematic plan view showing a semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 2 is a schematic cross-sectional view showing a cross section taken along the line AA ′ of the semiconductor light emitting device shown in FIG. FIGS. 3A to 3F are schematic six views showing a semiconductor light emitting element according to Embodiment 1 of the present invention. FIG. 4 is a schematic plan view showing a semiconductor light emitting element according to Embodiment 2 of the present invention. FIG. 5 is a schematic plan view showing a light emitting device according to Embodiment 3 of the present invention. FIG. 6 is a schematic plan view showing a wiring board according to Embodiment 3 of the present invention. FIG. 7 is a schematic plan view showing a light emitting device according to Example 2 of the present invention. FIG. 8 is a schematic plan view showing a conventional semiconductor light emitting device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 1st conductivity type semiconductor layer 3 2nd conductivity type semiconductor layer 4, 4a, 4b 1st electrode 5 2nd electrode 10 Light emitting layer 11 1st edge 12 2nd edge 13a, 13b Connection part 100 Semiconductor light emitting element 30 Protection Film 50a First wiring electrode 50b Second wiring electrode 51 Base 81 N-side electrode feeding portion 82 p-side electrode feeding portion

Claims (12)

A semiconductor light emitting element having a substantially square shape in a plan view having at least a first side and a second side adjacent to the first side,
A first conductivity type semiconductor layer; a second conductivity type semiconductor layer; a plurality of first electrodes provided on the first conductivity type semiconductor layer; a second electrode provided on the second conductivity type semiconductor layer; Have
The first conductive semiconductor layer, the second conductive semiconductor layer, and the second electrode surround the first electrode, and the first electrode and the second electrode are provided on the same surface side. ,
The first electrode has a long shape along the first side, and x columns (x ≧ 2) along the first side, y rows (y> x) along the second side, Semiconductor light-emitting elements arranged in a grid pattern. 2. The plurality of first electrodes are arranged such that a distance D ₁ between the first electrodes in a row direction is larger than a distance D ₂ between the first electrodes in a column direction. Semiconductor light emitting device. Wherein the plurality of first electrodes are disposed at equal intervals in the row direction, the distance D ₁ of the between the first electrode in the row direction, the second window side closest the first electrode to the second side The semiconductor light emitting element according to claim 1, wherein the distance D ₃ is larger than a distance D ₃ to the end of the second conductivity type semiconductor layer. The semiconductor light emitting element according to claim ₃ , wherein the distance D ₁ is not more than twice the distance D ₃ . Wherein the plurality of first electrodes are disposed at equal intervals in the column direction, the distance D ₂ between the first electrode in the row direction, the first edge side closest the first electrode to the first side 5. The semiconductor light emitting element according to claim 1, wherein the distance D ₄ is equal to or smaller than a distance D ₄ to the second conductivity type semiconductor layer terminal.   The semiconductor light emitting element according to claim 1, wherein the plurality of first electrodes have the same size and shape.   The semiconductor light emitting element according to claim 1, wherein the first electrode has a substantially circular shape that is long along the first side. The first conductive semiconductor layer is an n-type gallium nitride-based compound semiconductor layer, the second conductive type semiconductor layer, according to any one of claims 1 to 7, which is a p-type gallium nitride-based compound semiconductor layer Semiconductor light emitting device. The semiconductor light emitting element is a semiconductor light-emitting device according to any one of claim 1 to 8 which is a device for flip-chip. The first electrode, the first side in along two rows, the semiconductor light emitting device according to any one of the second sides claim are arranged in three rows of the grid-shaped along the 1-9. The semiconductor light emitting element according to any one of claims 1 to 10 , and a wiring board on which the semiconductor light emitting element is placed,
The wiring board has a first wiring electrode connected to the first electrode of the semiconductor light emitting element, and a second wiring electrode connected to the second electrode,
The first and second wiring electrodes are light emitting devices having a shape extending linearly in the length direction of the second side of the semiconductor light emitting element. The semiconductor light emitting element has a light emitting layer, and is provided in order of the second conductive semiconductor layer, the light emitting layer, and the first conductive semiconductor layer from the wiring board side,
At least a part of the second wiring electrode connected to the second electrode is provided on the outer side of the semiconductor light emitting element with a width wider than the first wiring electrode in plan view. The light emitting device according to claim 11 .

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