CN103219395A - 用于半导体元件的多沟渠终端结构及其制作方法 - Google Patents
用于半导体元件的多沟渠终端结构及其制作方法 Download PDFInfo
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- CN103219395A CN103219395A CN2012100184364A CN201210018436A CN103219395A CN 103219395 A CN103219395 A CN 103219395A CN 2012100184364 A CN2012100184364 A CN 2012100184364A CN 201210018436 A CN201210018436 A CN 201210018436A CN 103219395 A CN103219395 A CN 103219395A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000010410 layer Substances 0.000 claims description 165
- 230000002262 irrigation Effects 0.000 claims description 82
- 238000003973 irrigation Methods 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 230000000977 initiatory effect Effects 0.000 claims description 7
- -1 silica alkane Chemical class 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical group [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000012940 design transfer Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract description 4
- 230000000873 masking effect Effects 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001883 metal evaporation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210018436.4A CN103219395B (zh) | 2012-01-20 | 2012-01-20 | 用于半导体元件的多沟渠终端结构及其制作方法 |
Applications Claiming Priority (1)
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CN201210018436.4A CN103219395B (zh) | 2012-01-20 | 2012-01-20 | 用于半导体元件的多沟渠终端结构及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN103219395A true CN103219395A (zh) | 2013-07-24 |
CN103219395B CN103219395B (zh) | 2017-03-29 |
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CN201210018436.4A Active CN103219395B (zh) | 2012-01-20 | 2012-01-20 | 用于半导体元件的多沟渠终端结构及其制作方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097889A (zh) * | 2014-05-13 | 2015-11-25 | 帅群微电子股份有限公司 | 半导体元件的终端结构及其制造方法 |
CN107731933A (zh) * | 2016-08-13 | 2018-02-23 | 朱江 | 一种沟槽终端肖特基器件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809726A (zh) * | 2007-10-05 | 2010-08-18 | 维西埃-硅化物公司 | 金属氧化物半导体场效应晶体管有源区和边缘终止区电荷平衡 |
US20100327288A1 (en) * | 2009-06-26 | 2010-12-30 | Pfc Device Corporation | Trench schottky diode and method for manufacturing the same |
-
2012
- 2012-01-20 CN CN201210018436.4A patent/CN103219395B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809726A (zh) * | 2007-10-05 | 2010-08-18 | 维西埃-硅化物公司 | 金属氧化物半导体场效应晶体管有源区和边缘终止区电荷平衡 |
US20100327288A1 (en) * | 2009-06-26 | 2010-12-30 | Pfc Device Corporation | Trench schottky diode and method for manufacturing the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105097889A (zh) * | 2014-05-13 | 2015-11-25 | 帅群微电子股份有限公司 | 半导体元件的终端结构及其制造方法 |
CN105097889B (zh) * | 2014-05-13 | 2018-10-16 | 帅群微电子股份有限公司 | 半导体元件的终端结构及其制造方法 |
CN107731933A (zh) * | 2016-08-13 | 2018-02-23 | 朱江 | 一种沟槽终端肖特基器件 |
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CN103219395B (zh) | 2017-03-29 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: PFC DEVICE CORP. Free format text: FORMER OWNER: BVI BRITISH VIRGIN ISLANDS ENERGY SAVING PARTS CO., LTD. Effective date: 20150625 |
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Effective date of registration: 20150625 Address after: Hongkong, China, Wan Chai street, No. 12, shell tower, Arts crafts emporium, building 1 Applicant after: PFC DEVICE HOLDING LIMITED Address before: Taiwan Xindian District, New Taipei City in China way 501 No. 17 1 floor Applicant before: BVI British Virgin Islands Energy Saving Parts Co., Ltd. |
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