CN103210698A - 显示面板的制造方法以及显示面板 - Google Patents
显示面板的制造方法以及显示面板 Download PDFInfo
- Publication number
- CN103210698A CN103210698A CN2011800378734A CN201180037873A CN103210698A CN 103210698 A CN103210698 A CN 103210698A CN 2011800378734 A CN2011800378734 A CN 2011800378734A CN 201180037873 A CN201180037873 A CN 201180037873A CN 103210698 A CN103210698 A CN 103210698A
- Authority
- CN
- China
- Prior art keywords
- layer
- peristome
- photomask
- area
- photosensitive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 132
- 238000005192 partition Methods 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 315
- 239000010408 film Substances 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 25
- 239000003989 dielectric material Substances 0.000 description 9
- 238000010276 construction Methods 0.000 description 8
- 238000009499 grossing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000976 ink Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/006386 WO2013072963A1 (ja) | 2011-11-16 | 2011-11-16 | 表示パネルの製造方法および表示パネル |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103210698A true CN103210698A (zh) | 2013-07-17 |
CN103210698B CN103210698B (zh) | 2016-08-03 |
Family
ID=48429081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180037873.4A Active CN103210698B (zh) | 2011-11-16 | 2011-11-16 | 显示面板的制造方法以及显示面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9190430B2 (zh) |
JP (1) | JP5927520B2 (zh) |
CN (1) | CN103210698B (zh) |
WO (1) | WO2013072963A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016000399A1 (zh) * | 2014-07-04 | 2016-01-07 | 京东方科技集团股份有限公司 | 有机薄膜晶体管及其制备方法、阵列基板及其制备方法、显示装置 |
CN111656427A (zh) * | 2018-01-31 | 2020-09-11 | 夏普株式会社 | 显示装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5879575B2 (ja) | 2011-09-02 | 2016-03-08 | 株式会社Joled | 表示パネルの製造方法 |
CN103477440B (zh) | 2011-09-26 | 2016-07-20 | 松下电器产业株式会社 | 有机薄膜晶体管 |
WO2013073084A1 (ja) * | 2011-11-16 | 2013-05-23 | パナソニック株式会社 | 表示パネルの製造方法および表示パネル |
CN105446014B (zh) * | 2015-12-24 | 2019-05-14 | 昆山龙腾光电有限公司 | 可实现视角切换的液晶显示装置 |
KR102560703B1 (ko) * | 2016-04-29 | 2023-07-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102652645B1 (ko) * | 2018-09-03 | 2024-04-02 | 삼성디스플레이 주식회사 | 발광 장치 및 이를 구비하는 표시 장치 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010004134A1 (en) * | 1999-12-15 | 2001-06-21 | Kazuto Saitoh | Electronic device and method of producing same |
JP2006106575A (ja) * | 2004-10-08 | 2006-04-20 | Mitsubishi Electric Corp | アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法 |
CN1893108A (zh) * | 2005-07-06 | 2007-01-10 | 三星Sdi株式会社 | 平板显示装置及其制造方法 |
CN100495717C (zh) * | 2004-10-15 | 2009-06-03 | 三星电子株式会社 | 有机薄膜晶体管阵列及其制造方法 |
CN102097448A (zh) * | 2009-12-14 | 2011-06-15 | 乐金显示有限公司 | 有机电致发光显示设备及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI272556B (en) * | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
JP2007019014A (ja) | 2005-07-06 | 2007-01-25 | Samsung Sdi Co Ltd | 平板表示装置及びその製造方法 |
JP4415971B2 (ja) | 2006-05-10 | 2010-02-17 | カシオ計算機株式会社 | 表示装置及びその製造方法 |
KR100868427B1 (ko) | 2006-05-10 | 2008-11-11 | 가시오게산키 가부시키가이샤 | 표시장치 및 그 제조방법 |
JP2009128577A (ja) * | 2007-11-22 | 2009-06-11 | Hitachi Ltd | 有機発光表示装置 |
-
2011
- 2011-11-16 JP JP2013504600A patent/JP5927520B2/ja active Active
- 2011-11-16 WO PCT/JP2011/006386 patent/WO2013072963A1/ja active Application Filing
- 2011-11-16 CN CN201180037873.4A patent/CN103210698B/zh active Active
-
2013
- 2013-01-10 US US13/738,343 patent/US9190430B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010004134A1 (en) * | 1999-12-15 | 2001-06-21 | Kazuto Saitoh | Electronic device and method of producing same |
JP2006106575A (ja) * | 2004-10-08 | 2006-04-20 | Mitsubishi Electric Corp | アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法 |
CN100495717C (zh) * | 2004-10-15 | 2009-06-03 | 三星电子株式会社 | 有机薄膜晶体管阵列及其制造方法 |
CN1893108A (zh) * | 2005-07-06 | 2007-01-10 | 三星Sdi株式会社 | 平板显示装置及其制造方法 |
CN102097448A (zh) * | 2009-12-14 | 2011-06-15 | 乐金显示有限公司 | 有机电致发光显示设备及其制造方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016000399A1 (zh) * | 2014-07-04 | 2016-01-07 | 京东方科技集团股份有限公司 | 有机薄膜晶体管及其制备方法、阵列基板及其制备方法、显示装置 |
US9583722B2 (en) | 2014-07-04 | 2017-02-28 | Boe Technology Group Co., Ltd. | Organic thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device |
CN111656427A (zh) * | 2018-01-31 | 2020-09-11 | 夏普株式会社 | 显示装置 |
CN111656427B (zh) * | 2018-01-31 | 2022-02-22 | 夏普株式会社 | 显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US9190430B2 (en) | 2015-11-17 |
JP5927520B2 (ja) | 2016-06-01 |
WO2013072963A1 (ja) | 2013-05-23 |
US20130187177A1 (en) | 2013-07-25 |
JPWO2013072963A1 (ja) | 2015-04-02 |
CN103210698B (zh) | 2016-08-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103210698A (zh) | 显示面板的制造方法以及显示面板 | |
TWI602306B (zh) | 陣列基板結構與顯示裝置 | |
TWI467528B (zh) | 發光二極體顯示面板及其製作方法 | |
JP5906396B2 (ja) | フレキシブル半導体装置及びその製造方法 | |
US7547918B2 (en) | Active matrix substrate and electronic device | |
WO2016179940A1 (zh) | Oled像素单元、透明显示装置及制作方法、显示设备 | |
US20080224600A1 (en) | Organic light emitting display (OLED) device and method of fabricating the same | |
JP5536414B2 (ja) | パネル構造体、パネル構造体を含む表示装置及びその製造方法 | |
TW201705574A (zh) | 有機發光顯示裝置及製造有機發光顯示裝置之方法 | |
KR102022396B1 (ko) | 유기 발광 표시 장치 및 그 제조 방법 | |
JP2010040897A (ja) | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器 | |
CN110010623A (zh) | 显示装置 | |
JP2009021477A (ja) | 半導体装置およびその製造方法、ならびに表示装置およびその製造方法 | |
US20150084025A1 (en) | Oled display panel | |
US9312283B2 (en) | Method for producing display panel, and display panel | |
CN110112142B (zh) | 阵列基板及其制造方法、显示面板及电子装置 | |
CN108011049B (zh) | 具有修复区的有机发光显示装置 | |
TW201611263A (zh) | 顯示裝置及其製造方法 | |
TW201618288A (zh) | 顯示裝置及其製造方法 | |
JP5842180B2 (ja) | フレキシブル半導体装置及びその製造方法 | |
CN102629612B (zh) | 像素结构及其制造方法 | |
CN113661782A (zh) | 显示设备 | |
CN111199992B (zh) | 具有垂直结构的晶体管以及电子装置 | |
CN102420238B (zh) | 有机发光二极管显示器及其制造方法 | |
JP2010238873A (ja) | フレキシブル半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: Free format text: CORRECT: APPLICANT; FROM: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. TO: JANPAN ORGANIC RATE DISPLAY CO., LTD. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231207 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |