CN103210698B - 显示面板的制造方法以及显示面板 - Google Patents
显示面板的制造方法以及显示面板 Download PDFInfo
- Publication number
- CN103210698B CN103210698B CN201180037873.4A CN201180037873A CN103210698B CN 103210698 B CN103210698 B CN 103210698B CN 201180037873 A CN201180037873 A CN 201180037873A CN 103210698 B CN103210698 B CN 103210698B
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- peristome
- photomask
- partition wall
- gate insulating
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 129
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 19
- 238000005192 partition Methods 0.000 claims description 78
- 239000000758 substrate Substances 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 319
- 239000010408 film Substances 0.000 description 36
- 238000007789 sealing Methods 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 9
- 238000010276 construction Methods 0.000 description 8
- 238000009499 grossing Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/467—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
Description
Claims (3)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/006386 WO2013072963A1 (ja) | 2011-11-16 | 2011-11-16 | 表示パネルの製造方法および表示パネル |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103210698A CN103210698A (zh) | 2013-07-17 |
CN103210698B true CN103210698B (zh) | 2016-08-03 |
Family
ID=48429081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180037873.4A Active CN103210698B (zh) | 2011-11-16 | 2011-11-16 | 显示面板的制造方法以及显示面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9190430B2 (zh) |
JP (1) | JP5927520B2 (zh) |
CN (1) | CN103210698B (zh) |
WO (1) | WO2013072963A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5879575B2 (ja) | 2011-09-02 | 2016-03-08 | 株式会社Joled | 表示パネルの製造方法 |
US8916863B2 (en) | 2011-09-26 | 2014-12-23 | Panasonic Corporation | Organic thin-film transistor and method of manufacturing organic thin-film transistor |
WO2013073084A1 (ja) * | 2011-11-16 | 2013-05-23 | パナソニック株式会社 | 表示パネルの製造方法および表示パネル |
CN104091886B (zh) | 2014-07-04 | 2016-11-23 | 京东方科技集团股份有限公司 | 一种有机薄膜晶体管、阵列基板及制备方法、显示装置 |
CN105446014B (zh) * | 2015-12-24 | 2019-05-14 | 昆山龙腾光电有限公司 | 可实现视角切换的液晶显示装置 |
KR102560703B1 (ko) * | 2016-04-29 | 2023-07-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
WO2019150503A1 (ja) * | 2018-01-31 | 2019-08-08 | シャープ株式会社 | 表示装置 |
KR102652645B1 (ko) * | 2018-09-03 | 2024-04-02 | 삼성디스플레이 주식회사 | 발광 장치 및 이를 구비하는 표시 장치 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100495717C (zh) * | 2004-10-15 | 2009-06-03 | 三星电子株式会社 | 有机薄膜晶体管阵列及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185845A (ja) * | 1999-12-15 | 2001-07-06 | Internatl Business Mach Corp <Ibm> | 電子部品の製造方法及び該電子部品 |
TWI272556B (en) * | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
JP4450715B2 (ja) * | 2004-10-08 | 2010-04-14 | 三菱電機株式会社 | アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法 |
KR100626082B1 (ko) * | 2005-07-06 | 2006-09-20 | 삼성에스디아이 주식회사 | 평판표시장치 |
JP2007019014A (ja) | 2005-07-06 | 2007-01-25 | Samsung Sdi Co Ltd | 平板表示装置及びその製造方法 |
JP4415971B2 (ja) | 2006-05-10 | 2010-02-17 | カシオ計算機株式会社 | 表示装置及びその製造方法 |
KR100868427B1 (ko) | 2006-05-10 | 2008-11-11 | 가시오게산키 가부시키가이샤 | 표시장치 및 그 제조방법 |
JP2009128577A (ja) | 2007-11-22 | 2009-06-11 | Hitachi Ltd | 有機発光表示装置 |
KR101309863B1 (ko) * | 2009-12-14 | 2013-09-16 | 엘지디스플레이 주식회사 | 발광 표시 장치 및 그 제조 방법 |
-
2011
- 2011-11-16 CN CN201180037873.4A patent/CN103210698B/zh active Active
- 2011-11-16 JP JP2013504600A patent/JP5927520B2/ja active Active
- 2011-11-16 WO PCT/JP2011/006386 patent/WO2013072963A1/ja active Application Filing
-
2013
- 2013-01-10 US US13/738,343 patent/US9190430B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100495717C (zh) * | 2004-10-15 | 2009-06-03 | 三星电子株式会社 | 有机薄膜晶体管阵列及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103210698A (zh) | 2013-07-17 |
US20130187177A1 (en) | 2013-07-25 |
WO2013072963A1 (ja) | 2013-05-23 |
JP5927520B2 (ja) | 2016-06-01 |
JPWO2013072963A1 (ja) | 2015-04-02 |
US9190430B2 (en) | 2015-11-17 |
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Address after: Tokyo, Japan Applicant after: JOLED Inc. Address before: Osaka Japan Applicant before: Matsushita Electric Industrial Co.,Ltd. |
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Free format text: CORRECT: ADDRESS; FROM: Free format text: CORRECT: APPLICANT; FROM: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. TO: JANPAN ORGANIC RATE DISPLAY CO., LTD. |
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Effective date of registration: 20231207 Address after: Tokyo, Japan Patentee after: Japan Display Design and Development Contract Society Address before: Tokyo, Japan Patentee before: JOLED Inc. |
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