CN1031967C - 制备欧姆接触的方法和具有欧姆接触的光电池 - Google Patents

制备欧姆接触的方法和具有欧姆接触的光电池 Download PDF

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Publication number
CN1031967C
CN1031967C CN92114442A CN92114442A CN1031967C CN 1031967 C CN1031967 C CN 1031967C CN 92114442 A CN92114442 A CN 92114442A CN 92114442 A CN92114442 A CN 92114442A CN 1031967 C CN1031967 C CN 1031967C
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CN
China
Prior art keywords
semiconductor
iib
layer
vib
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN92114442A
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English (en)
Chinese (zh)
Other versions
CN1076311A (zh
Inventor
D·R·约翰逊
S·奥克蒂克
M·E·奥茨桑
M·H·帕德森
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BP Technology Ventures Ltd
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BP Technology Ventures Ltd
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Filing date
Publication date
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Publication of CN1076311A publication Critical patent/CN1076311A/zh
Application granted granted Critical
Publication of CN1031967C publication Critical patent/CN1031967C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10P14/47—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Led Devices (AREA)
CN92114442A 1991-11-07 1992-11-07 制备欧姆接触的方法和具有欧姆接触的光电池 Expired - Fee Related CN1031967C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919123684A GB9123684D0 (en) 1991-11-07 1991-11-07 Ohmic contacts
GB9123684.4 1991-11-07

Publications (2)

Publication Number Publication Date
CN1076311A CN1076311A (zh) 1993-09-15
CN1031967C true CN1031967C (zh) 1996-06-05

Family

ID=10704254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92114442A Expired - Fee Related CN1031967C (zh) 1991-11-07 1992-11-07 制备欧姆接触的方法和具有欧姆接触的光电池

Country Status (14)

Country Link
US (1) US5472910A (enExample)
EP (1) EP0541382B1 (enExample)
JP (1) JP3303975B2 (enExample)
KR (1) KR100256135B1 (enExample)
CN (1) CN1031967C (enExample)
AT (1) ATE200594T1 (enExample)
AU (1) AU658025B2 (enExample)
DE (1) DE69231779T2 (enExample)
GB (1) GB9123684D0 (enExample)
IN (1) IN185981B (enExample)
MY (1) MY109655A (enExample)
TW (1) TW222690B (enExample)
WO (1) WO1993009568A1 (enExample)
ZA (1) ZA928618B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
WO2001078156A1 (en) * 2000-04-06 2001-10-18 Akzo Nobel Nv Method of manufacturing a photovoltaic foil
US6423565B1 (en) 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
DE10104726A1 (de) * 2001-02-02 2002-08-08 Siemens Solar Gmbh Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US6979708B2 (en) * 2001-08-23 2005-12-27 Sunoco, Inc. (R&M) Hydrotalcites, syntheses, and uses
AT503837B1 (de) * 2006-06-22 2009-01-15 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)
US20090320921A1 (en) * 2008-02-01 2009-12-31 Grommesh Robert C Photovoltaic Glazing Assembly and Method
US20090194156A1 (en) * 2008-02-01 2009-08-06 Grommesh Robert C Dual seal photovoltaic glazing assembly and method
US8101039B2 (en) * 2008-04-10 2012-01-24 Cardinal Ig Company Manufacturing of photovoltaic subassemblies
US20090194147A1 (en) * 2008-02-01 2009-08-06 Cardinal Ig Company Dual seal photovoltaic assembly and method
JP2011515852A (ja) * 2008-03-18 2011-05-19 ソレクサント・コーポレイション 薄膜太陽電池の改善されたバックコンタクト
US8410357B2 (en) * 2008-03-18 2013-04-02 Solexant Corp. Back contact for thin film solar cells
KR20100125375A (ko) * 2008-03-26 2010-11-30 솔렉슨트 코포레이션 기판 구조의 태양 전지의 개선된 접합
CA2720257A1 (en) * 2008-04-10 2009-10-15 Cardinal Ig Company Glazing assemblies that incorporate photovoltaic elements and related methods of manufacture
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
US8039290B2 (en) * 2009-12-16 2011-10-18 General Electric Company Method of making photovoltaic cell
US8748214B2 (en) * 2009-12-16 2014-06-10 First Solar, Inc. Method of p-type doping of cadmium telluride
US8187963B2 (en) 2010-05-24 2012-05-29 EncoreSolar, Inc. Method of forming back contact to a cadmium telluride solar cell
US20110308593A1 (en) * 2010-06-18 2011-12-22 Primestar Solar Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer
US20120043215A1 (en) * 2010-08-17 2012-02-23 EncoreSolar, Inc. Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing
CH705074A1 (de) * 2011-06-07 2012-12-14 Von Roll Solar Ag Verfahren zur Herstellung von Dünnschichtsolarzellen mit gesinterten Halbleiterschichten sowie nach diesem Verfahren hergestellte Dünnschichtsolarzellen.
US8697480B1 (en) 2012-11-21 2014-04-15 First Solar, Inc. Method for treating a semiconductor
TWI512801B (zh) * 2013-09-13 2015-12-11 Richtek Technology Corp 歐姆接觸結構與具有該歐姆接觸結構之半導體元件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
JPS53138289A (en) * 1977-05-10 1978-12-02 Agency Of Ind Science & Technol Film solar battery of cadmium telluride
JPS55102279A (en) * 1979-01-30 1980-08-05 Agency Of Ind Science & Technol Method of fabricating photovoltaic element
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4568792A (en) * 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell
US4684761A (en) * 1986-04-09 1987-08-04 The Boeing Company Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4816120A (en) * 1986-05-06 1989-03-28 The Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
FR2614135B1 (fr) * 1987-04-14 1989-06-30 Telecommunications Sa Photodiode hgcdte a reponse rapide
JP2583933B2 (ja) * 1987-12-23 1997-02-19 松下電器産業株式会社 光起電力装置の製造法
US5340409A (en) * 1992-04-23 1994-08-23 Canon Kabushiki Kaisha Photovoltaic element and method for forming the same

Also Published As

Publication number Publication date
EP0541382B1 (en) 2001-04-11
WO1993009568A1 (en) 1993-05-13
DE69231779T2 (de) 2001-08-02
ATE200594T1 (de) 2001-04-15
ZA928618B (en) 1994-05-09
EP0541382A1 (en) 1993-05-12
CN1076311A (zh) 1993-09-15
DE69231779D1 (de) 2001-05-17
IN185981B (enExample) 2001-05-26
TW222690B (enExample) 1994-04-21
GB9123684D0 (en) 1992-01-02
AU658025B2 (en) 1995-03-30
AU2894992A (en) 1993-06-07
JPH07500948A (ja) 1995-01-26
KR100256135B1 (ko) 2000-05-15
JP3303975B2 (ja) 2002-07-22
MY109655A (en) 1997-03-31
US5472910A (en) 1995-12-05

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PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C15 Extension of patent right duration from 15 to 20 years for appl. with date before 31.12.1992 and still valid on 11.12.2001 (patent law change 1993)
OR01 Other related matters
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee