ZA928618B - Process for making ohmic contacts and photovoltaiccell with ohmic contact - Google Patents

Process for making ohmic contacts and photovoltaiccell with ohmic contact

Info

Publication number
ZA928618B
ZA928618B ZA928618A ZA928618A ZA928618B ZA 928618 B ZA928618 B ZA 928618B ZA 928618 A ZA928618 A ZA 928618A ZA 928618 A ZA928618 A ZA 928618A ZA 928618 B ZA928618 B ZA 928618B
Authority
ZA
South Africa
Prior art keywords
photovoltaiccell
ohmic
making
contacts
ohmic contacts
Prior art date
Application number
ZA928618A
Other languages
English (en)
Inventor
Daniel Robert Johnson
Sener Oktik
Mehmet Ersin Ozsan
Michael Holmes Patterson
Original Assignee
Bp Solar Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bp Solar Ltd filed Critical Bp Solar Ltd
Publication of ZA928618B publication Critical patent/ZA928618B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds

Landscapes

  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Bipolar Transistors (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
ZA928618A 1991-11-07 1992-11-09 Process for making ohmic contacts and photovoltaiccell with ohmic contact ZA928618B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919123684A GB9123684D0 (en) 1991-11-07 1991-11-07 Ohmic contacts

Publications (1)

Publication Number Publication Date
ZA928618B true ZA928618B (en) 1994-05-09

Family

ID=10704254

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA928618A ZA928618B (en) 1991-11-07 1992-11-09 Process for making ohmic contacts and photovoltaiccell with ohmic contact

Country Status (14)

Country Link
US (1) US5472910A (enExample)
EP (1) EP0541382B1 (enExample)
JP (1) JP3303975B2 (enExample)
KR (1) KR100256135B1 (enExample)
CN (1) CN1031967C (enExample)
AT (1) ATE200594T1 (enExample)
AU (1) AU658025B2 (enExample)
DE (1) DE69231779T2 (enExample)
GB (1) GB9123684D0 (enExample)
IN (1) IN185981B (enExample)
MY (1) MY109655A (enExample)
TW (1) TW222690B (enExample)
WO (1) WO1993009568A1 (enExample)
ZA (1) ZA928618B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
AU2001254762A1 (en) * 2000-04-06 2001-10-23 Akzo Nobel N.V. Method of manufacturing a photovoltaic foil
US6423565B1 (en) 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
DE10104726A1 (de) * 2001-02-02 2002-08-08 Siemens Solar Gmbh Verfahren zur Strukturierung einer auf einem Trägermaterial aufgebrachten Oxidschicht
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
US6979708B2 (en) * 2001-08-23 2005-12-27 Sunoco, Inc. (R&M) Hydrotalcites, syntheses, and uses
AT503837B1 (de) * 2006-06-22 2009-01-15 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)
MY157221A (en) 2007-09-25 2016-05-13 First Solar Inc Photovoltaic devices including an interfacial layer
US20090320921A1 (en) * 2008-02-01 2009-12-31 Grommesh Robert C Photovoltaic Glazing Assembly and Method
US20090194147A1 (en) * 2008-02-01 2009-08-06 Cardinal Ig Company Dual seal photovoltaic assembly and method
US20090194156A1 (en) * 2008-02-01 2009-08-06 Grommesh Robert C Dual seal photovoltaic glazing assembly and method
WO2009117072A1 (en) * 2008-03-18 2009-09-24 Solexant Corp. Improved back contact in thin solar cells
US8410357B2 (en) * 2008-03-18 2013-04-02 Solexant Corp. Back contact for thin film solar cells
JP2011515867A (ja) * 2008-03-26 2011-05-19 ソレクサント・コーポレイション サブストレート構造太陽電池の改良された接続
WO2009126186A1 (en) * 2008-04-10 2009-10-15 Cardinal Ig Company Manufacturing of photovoltaic subassemblies
ES2372355T3 (es) * 2008-04-10 2012-01-19 Cardinal Ig Company Conjuntos de acristalamiento que incorporan elementos fotovoltaicos y métodos de fabricación correspondientes.
US20110117696A1 (en) * 2009-11-19 2011-05-19 Air Liquide Electronics U.S. Lp CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS
US8748214B2 (en) 2009-12-16 2014-06-10 First Solar, Inc. Method of p-type doping of cadmium telluride
US8039290B2 (en) * 2009-12-16 2011-10-18 General Electric Company Method of making photovoltaic cell
US8187963B2 (en) 2010-05-24 2012-05-29 EncoreSolar, Inc. Method of forming back contact to a cadmium telluride solar cell
US20110308593A1 (en) * 2010-06-18 2011-12-22 Primestar Solar Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer
WO2012024438A2 (en) * 2010-08-17 2012-02-23 EncoreSolar, Inc. Method and apparatus for electrodepositing large area cadmium telluride thin films for solar module manufacturing
CH705074A1 (de) * 2011-06-07 2012-12-14 Von Roll Solar Ag Verfahren zur Herstellung von Dünnschichtsolarzellen mit gesinterten Halbleiterschichten sowie nach diesem Verfahren hergestellte Dünnschichtsolarzellen.
US8697480B1 (en) 2012-11-21 2014-04-15 First Solar, Inc. Method for treating a semiconductor
TWI512801B (zh) * 2013-09-13 2015-12-11 Richtek Technology Corp 歐姆接觸結構與具有該歐姆接觸結構之半導體元件

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride
JPS53138289A (en) * 1977-05-10 1978-12-02 Agency Of Ind Science & Technol Film solar battery of cadmium telluride
JPS55102279A (en) * 1979-01-30 1980-08-05 Agency Of Ind Science & Technol Method of fabricating photovoltaic element
US4456630A (en) * 1983-08-18 1984-06-26 Monosolar, Inc. Method of forming ohmic contacts
US4568792A (en) * 1984-02-02 1986-02-04 Sri International Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts
US4666569A (en) * 1984-12-28 1987-05-19 Standard Oil Commercial Development Company Method of making multilayer ohmic contact to thin film p-type II-VI semiconductor
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell
US4684761A (en) * 1986-04-09 1987-08-04 The Boeing Company Method for making graded I-III-VI2 semiconductors and solar cell obtained thereby
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4816120A (en) * 1986-05-06 1989-03-28 The Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US4735662A (en) * 1987-01-06 1988-04-05 The Standard Oil Company Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
FR2614135B1 (fr) * 1987-04-14 1989-06-30 Telecommunications Sa Photodiode hgcdte a reponse rapide
JP2583933B2 (ja) * 1987-12-23 1997-02-19 松下電器産業株式会社 光起電力装置の製造法
US5340409A (en) * 1992-04-23 1994-08-23 Canon Kabushiki Kaisha Photovoltaic element and method for forming the same

Also Published As

Publication number Publication date
JP3303975B2 (ja) 2002-07-22
JPH07500948A (ja) 1995-01-26
TW222690B (enExample) 1994-04-21
EP0541382B1 (en) 2001-04-11
AU658025B2 (en) 1995-03-30
MY109655A (en) 1997-03-31
IN185981B (enExample) 2001-05-26
CN1031967C (zh) 1996-06-05
CN1076311A (zh) 1993-09-15
AU2894992A (en) 1993-06-07
GB9123684D0 (en) 1992-01-02
WO1993009568A1 (en) 1993-05-13
DE69231779T2 (de) 2001-08-02
KR100256135B1 (ko) 2000-05-15
DE69231779D1 (de) 2001-05-17
US5472910A (en) 1995-12-05
EP0541382A1 (en) 1993-05-12
ATE200594T1 (de) 2001-04-15

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