CN103165530A - Tft阵列基板及其制造方法、显示装置 - Google Patents
Tft阵列基板及其制造方法、显示装置 Download PDFInfo
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Abstract
本发明属于显示技术领域,公开了一种TFT阵列基板及其制造方法、显示装置,仅通过一次构图工艺形成钝化层过孔的图案,然后在该构图工艺的光刻胶剥离过程中形成遮光片的图案,克服了阵列基板的构图工艺中由于曝光量过大对薄膜晶体管有源层的损坏,大大降低了在阵列基板上形成彩色滤光片的成本,保证了TFT的特性,进而不会影响显示装置的显示品质。
Description
技术领域
本发明涉及显示技术领域,特别是涉及一种TFT阵列基板及其制造方法、显示装置。
背景技术
薄膜晶体管液晶显示器(Thin Film Transistor-Liquid CrystalDisplay,简称TFT-LCD)具有体积小,功耗低,无辐射等特点,近年来得到迅速发展,在当前的平板显示器市场中占据主导地位。TFT-LCD的主体结构包括对盒的阵列基板和彩膜基板。阵列基板上形成有像素矩阵,以及形成在每个像素区域内的薄膜晶体管(ThinFilm Transistor,简称TFT)和透明像素电极。彩膜基板上形成有红、绿、蓝(R、G、B)三种彩色树脂组成的彩色滤光片和黑矩阵,其中,黑矩阵与薄膜晶体管对应设置,防止漏光。以薄膜晶体管作为开关形成驱动电场控制液晶的旋转,从而控制TFT-LCD的显示过程,彩色滤光片用于实现彩色画面的显示。但是,由于阵列基板和彩膜基板对盒时存在偏差,需要增大黑矩阵(BM)的宽度,以避免对盒偏差造成漏光,而增大的BM却会降低像素区域的开口率,影响显示效果。
现有技术中通过将彩色滤光片形成在阵列基板上的结构来解决这个问题。该阵列基板的制造工艺顺序一般为:TFT—钝化层—钝化层过孔-彩色滤光片-树脂平坦层(用于使R、G、B彩色树脂的表面平滑)-透明像素电极;或者TFT-钝化层-彩色滤光片-树脂平坦层-钝化层过孔-透明像素电极。其中,彩色滤光片图案和树脂平坦层图案的形成过程为:分别通过掩膜工艺形成R、G、B彩色树脂的图案,然后再通过一次掩膜工艺形成树脂平坦层的图案。因此,无论是以上哪种工艺顺序,在制作树脂平坦层时都要进行曝光,且曝光量较大,大曝光量对有源层(包括半导体层和掺杂半导体层)有损坏,会影响TFT特性,降低显示品质。
目前的一种解决方法就是增加一次掩膜工艺在TFT上方制作遮光片图案,但增加一次掩膜工艺会使阵列基板的制造成本大幅增加,而如果通过多灰阶掩膜工艺同时形成遮光片图案与其它图案(如:钝化层过孔图案),则会增加掩膜版的成本,提高阵列基板的制造成本。
发明内容
(一)要解决的技术问题
本发明要解决的技术问题是提供一种TFT阵列基板及其制造方法、显示装置,仅通过一次构图工艺形成钝化层过孔的图案,并在该构图工艺的光刻胶剥离过程中形成遮光片的图案,以克服阵列基板的构图工艺中由于曝光量过大对薄膜晶体管有源层的损坏,并降低在TFT上方形成遮光片的制造成本。
(二)技术方案
为了解决上述技术问题,本发明提供一种TFT阵列基板的制造方法,包括以下步骤:
S1、在一衬底基板上形成薄膜晶体管;
S2、在完成步骤S1的衬底基板上形成钝化层薄膜;
S3、在完成步骤S2的衬底基板上形成包括钝化层过孔和遮光片的图案;
S4、在完成步骤S3的衬底基板上形成彩色滤光片图案和像素电极图案,所述像素电极通过所述钝化层过孔与所述薄膜晶体管的漏电极电连接,所述彩色滤光片与所述像素电极的位置对应。
如上所述的TFT阵列基板的制造方法,优选的是,形成钝化层过孔的图案具体包括:
在完成步骤S2的衬底基板上涂覆一层光刻胶;
采用掩膜版进行曝光,显影,使光刻胶形成光刻胶完全去除区域和光刻胶完全保留区域,其中,光刻胶完全去除区域对应于所述钝化层过孔所在的区域,光刻胶完全保留区域对应于其他图案所在的区域;
刻蚀掉光刻胶完全去除区域的钝化层薄膜,形成钝化层过孔的图案。
如上所述的TFT阵列基板的制造方法,优选的是,形成遮光片的图案具体包括:
通过灰化工艺减薄光刻胶完全保留区域的光刻胶高度直至露出所述薄膜晶体管,所述薄膜晶体管的周边区域上方仍保留一定厚度的光刻胶;
在所述薄膜晶体管上方形成不透光导电金属层薄膜;
剥离剩余的光刻胶,在所述薄膜晶体管上方形成遮光片图案,所述钝化层过孔上方仍保留不透光导电金属层薄膜。
如上所述的TFT阵列基板的制造方法,优选的是,所述灰化工艺采用的气体中氧气和六氟化硫气体的体积比范围为10~50。
如上所述的TFT阵列基板的制造方法,优选的是,步骤S1具体包括:
在一衬底基板上形成横纵交叉分布的栅线和数据线,其中,所述栅线和数据线交叉限定的区域为像素单元区域;所述薄膜晶体管形成在所述像素单元区域内。
如上所述的TFT阵列基板的制造方法,优选的是,步骤S4具体包括:
在完成步骤S3的衬底基板上形成红色像素图案、绿色像素图案和蓝色像素图案,所述红色像素、绿色像素和蓝色像素组成所述彩色滤光片;
在所述彩色滤光片上方形成像素电极图案。
如上所述的TFT阵列基板的制造方法,优选的是,步骤S4具体包括:
在完成步骤S3的衬底基板上形成像素电极图案;
在所述像素电极图案上方形成红色像素图案、绿色像素图案和蓝色像素图案,所述红色像素、绿色像素和蓝色像素组成所述彩色滤光片。
本发明还提供一种TFT阵列基板,包括形成在一衬底基板上的薄膜晶体管、钝化层过孔、彩色滤光片和像素电极,其特征在于,其还包括位于所述薄膜晶体管上方的遮光片,且所述钝化层过孔上方具有与所述遮光片同材质的不透光导电金属层薄膜。
同时,本发明还提供一种显示装置,所述显示装置如上所述的阵列基板。
(三)有益效果
本发明所提供的TFT阵列基板及其制造方法、显示装置,仅通过一次构图工艺形成钝化层过孔的图案,然后在该构图工艺的光刻胶剥离过程中形成遮光片的图案,克服了阵列基板的构图工艺中由于曝光量过大对薄膜晶体管有源层的损坏,大大降低了在阵列基板上形成彩色滤光片的成本,保证了TFT的特性,进而不会影响显示装置的显示品质。
附图说明
图1-图8为本发明实施例中TFT阵列基板的制造过程示意图;
图9为图8的俯视图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。
实施例一
结合图1-图8所示,本发明实施例中的TFT阵列基板的制造方法包括:
S1、在一衬底基板上形成薄膜晶体管;
结合图1所示,首先在一衬底基板2上形成薄膜晶体管1。其中,衬底基板2由透光材料制成,具有良好的透光性,通常为一玻璃基板、一石英基板或一透明树脂基板。
在一个实施例中,在衬底基板2上形成薄膜晶体管1具体包括:结合图9所示,在衬底基板2上形成横纵交叉分布的栅线20和数据线30,其中,栅线20和数据线30交叉限定的区域为像素单元区域40,而薄膜晶体管1形成在像素单元区域40内,具体的,薄膜晶体管1可以形成在栅线20上方。
其中,薄膜晶体管1可以为顶栅结构的薄膜晶体管,也可以为底栅结构的薄膜晶体管。下面以底栅结构的薄膜晶体管为例来具体说明薄膜晶体管1的形成过程:
结合图1和图2所示,首先在衬底基板2上形成栅电极图案3。具体的,可以采用沉积、涂敷或溅射等工艺在衬底基板2上形成栅金属层薄膜(图中未示出),并通过构图工艺在该栅金属层薄膜上形成栅电极图案3。该构图工艺具体包括在栅金属层薄膜上涂覆光刻胶、采用普通掩膜版曝光、显影、刻蚀、剥离光刻胶等工艺,优选采用湿刻法进行刻蚀;
然后在栅电极图案3上依次形成栅绝缘层薄膜100、有源层薄膜(图中未示出)和源漏金属层薄膜(图中未示出),其中,有源层薄膜包括半导体层薄膜和掺杂半导体层薄膜,且掺杂半导体层薄膜位于半导体层薄膜上方。本实施例中可以通过多次构图工艺分别形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6,或通过一次构图工艺同时形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6。具体的,通过多次构图工艺形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6包括:
首先在栅电极图案3上采用沉积、涂敷或溅射等工艺形成栅绝缘层薄膜100、有源层薄膜,采用普通掩膜板通过一次构图工艺形成有源层图案(图中未示出);
然后在有源层图案上采用沉积、涂敷或溅射等工艺形成源漏金属层薄膜,采用普通掩膜板通过一次构图工艺形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6。该构图工艺具体可以包括在源漏金属层薄膜上涂覆光刻胶、采用普通掩膜版曝光、显影、刻蚀、剥离光刻胶等工艺,优选采用湿刻法进行刻蚀,形成薄膜晶体管1的源电极图案4、漏电极图案5,然后可以采用干刻法刻蚀掉源电极4和漏电极5之间的全部掺杂半导体层和部分半导体层,形成薄膜晶体管1的沟道图案6。
具体的,通过一次构图工艺形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6包括:
首先在栅电极图案3上采用沉积、涂敷或溅射等工艺依次形成栅绝缘层薄膜100、有源层薄膜和源漏金属层薄膜,然后采用半色调或灰色调掩膜版通过一次构图工艺形成薄膜晶体管1的源电极图案4、漏电极图案5和沟道图案6。该构图工艺具体可以包括:
首先,在源漏金属层薄膜上涂覆一层光刻胶(图中未示出);
接着,采用半色调或灰色调掩膜版进行曝光,使光刻胶形成光刻胶完全去除区域、光刻胶完全保留区域和光刻胶半保留区域,其中,光刻胶完全保留区域对应于源电极图案4和漏电极图案5所在的区域,光刻胶半保留区域对应于源电极图案4和漏电极图案5之间的沟道图案6所在的区域,光刻胶完全去除区域对应于上述图案以外的区域;显影处理后,光刻胶完全保留区域的光刻胶厚度没有变化,光刻胶完全去除区域的光刻胶被完全去除,光刻胶半保留区域的光刻胶厚度减少;
然后,进行第一次刻蚀工艺完全刻蚀掉光刻胶完全去除区域下方的源漏金属层薄膜和有源层薄膜。具体的,优选通过湿刻法先刻蚀掉光刻胶完全去除区域下方的源漏金属层薄膜,再通过干刻法刻蚀掉其下的有源层薄膜,形成有源层图案。同时,干刻法对光刻胶完全保留区域和光刻胶半保留区域的光刻胶起到一个减薄过程;
之后,通过灰化工艺去除光刻胶半保留区域的光刻胶,暴露出该区域的源漏金属层薄膜。具体的,通过灰化处理去除光刻胶半保留区域上方的光刻胶,暴露出位于其下的源漏金属层薄膜;
再通过第二次刻蚀工艺完全刻蚀掉光刻胶半保留区域下方的源漏金属层薄膜、掺杂半导体层薄膜和一定厚度的半导体层薄膜,暴露出该区域的半导体层薄膜,形成位于源电极4和漏电极5之间的沟道图案6。具体的,可以先通过湿刻法刻蚀掉光刻胶半保留区域下方的源漏金属层薄膜,再通过干刻法刻蚀掉其下的掺杂半导体层薄膜和一定厚度的半导体层薄膜,形成沟道图案6;
最后,剥离剩余的光刻胶,在源漏金属层薄膜上形成源电极图案4和漏电极图案5。
S2、在完成步骤S1的衬底基板上形成钝化层薄膜;
如图1所示,在完成步骤S1的衬底基板2上形成钝化层薄膜101。具体的,可以采用沉积、涂敷或溅射等工艺在栅电极图案3上形成覆盖整块衬底基板2的钝化层薄膜101。其中,钝化层薄膜101可以为氮化硅介电层或氧化硅介电层,也可以为氮化硅和氧化硅组成的复合介电层。
S3、在完成步骤S2的衬底基板上形成包括钝化层过孔和遮光片的图案;
该步骤具体包括:在完成步骤S2的衬底基板上首先采用普通掩膜版通过一次构图工艺形成包括钝化层过孔的图案,然后再通过剥离光刻胶的过程形成包括遮光片图案。
其中,形成钝化层过孔图案具体可以包括以下步骤:
首先在完成步骤S2的衬底基板上涂覆一层光刻胶102,如图2所示。具体的,在薄膜晶体管1上涂覆覆盖整块衬底基板2的光刻胶102;
然后采用掩膜版进行曝光,显影,使光刻胶形成光刻胶完全去除区域和光刻胶完全保留区域,其中,光刻胶完全去除区域对应于钝化层过孔7所在的区域,光刻胶完全保留区域对应于其他图案所在的区域,如图3所示。优选采用湿刻法完全刻蚀掉钝化层过孔7上方的钝化层101,形成位于薄膜晶体管1漏电极5上方的钝化层过孔7,如图4所示;
相应地,形成遮光片图案具体包括以下步骤:
通过灰化工艺去除薄膜晶体管1上方的光刻胶102,露出薄膜晶体管1,如图5所示。由于薄膜晶体管1高出其周围区域,通过灰化工艺去除光刻胶102后,可以仅露出薄膜晶体管1,而薄膜晶体管1的周边区域上方仍保留有一定厚度的光刻胶102,如图5所示。优选该灰化工艺采用的气体中氧气和六氟化硫气体的体积比范围为10~50时,可以有效去除光刻胶,并保留一定的厚度;
然后,可以采用沉积、涂敷或溅射等工艺在薄膜晶体管1上方形成覆盖整块衬底基板2的不透光导电金属层薄膜103,如图6所示。其中,不透光导电金属层薄膜103可以为钼、铝、铜等具有导电性且不透光的金属材料;
最后,剥离剩余的光刻胶102,在薄膜晶体管1上方形成遮光片图案8,钝化层过孔7上方仍保留不透光导电金属层薄膜103。如图7所示,虽然钝化层过孔7上方的不透光导电金属层薄膜103未在光刻胶剥离的过程中去除,但由于不透光导电金属层103具有导电性,并不会影响像素电极9和薄膜晶体管1漏电极5的电连接。且由于遮光片8仅形成在薄膜晶体管1上方,不会影响像素单元的开口率。
由于仅通过一次构图工艺形成钝化层过孔的图案,然后在该构图工艺的光刻胶剥离过程中形成遮光片的图案,大大降低了在阵列基板上形成彩色滤光片的成本,保证了TFT的特性,进而不会影响显示装置的显示品质。
S4、在完成步骤S3的衬底基板上形成彩色滤光片图案和像素电极图案,所述像素电极通过所述钝化层过孔与所述薄膜晶体管的漏电极电连接,所述彩色滤光片与所述像素电极的位置对应。
其中,彩色滤光片10与像素电极9位置对应,结合图8所示,即彩色滤光片10位于像素电极9所在区域的上方或下方,为从阵列基板射出的光线提供色相,实现彩色画面的显示。
由于彩色滤光片10由红色像素(图中未示出)、绿色像素(图中未示出)和蓝色像素(图中未示出)组成,则彩色滤光片图案10的形成也包括这三种像素图案的形成。一般红色像素图案、绿色像素图案和蓝色像素图案分别通过一次构图工艺形成。下面以红色像素为例来具体说明像素图案的形成过程:
首先利用涂覆分散法在整块衬底基板2上涂覆一层红色像素树脂层(图中未示出),其中,像素树脂层通常是丙烯酸类感光性树脂或其他羧酸型色素颜料树脂;然后采用普通掩膜版通过一次构图工艺形成红色像素图案。
当彩色滤光片10位于像素电极9所在区域的下方时,如图8所示,可以通过以下步骤形成彩色滤光片图案10和像素电极图案9:
在完成步骤S3的衬底基板2上形成红色像素图案、绿色像素图案和蓝色像素图案;
然后在彩色滤光片10上方形成像素电极图案9。具体的,采用沉积、涂敷或溅射等工艺在红色像素图案、绿色像素图案和蓝色像素图案上方形成像素电极金属层薄膜(图中未示出),通过曝光、显影、刻蚀等工艺,在像素电极金属层薄膜上形成像素电极图案9,且像素电极9通过钝化层过孔7与薄膜晶体管1的漏电极5电连接。
当彩色滤光片10位于像素电极9所在区域的上方时,可以通过以下步骤形成彩色滤光片图案10和像素电极图案9:
在完成步骤S3的衬底基板2上形成像素电极图案9。具体的,采用沉积、涂敷或溅射等工艺在薄膜晶体管1上方形成覆盖整块衬底基板的像素电极金属层薄膜(图中未示出),通过曝光、显影、刻蚀等工艺,在像素电极金属层薄膜上形成像素电极图案9,且像素电极9通过钝化层过孔7与薄膜晶体管1的漏电极5电连接。
然后在像素电极图案9上方形成红色像素图案、绿色像素图案和蓝色像素图案。
实施例二
本实施例中提供一种阵列基板,结合图8和图9所示,该阵列基板包括形成在一衬底基板2上的薄膜晶体管1、彩色滤光片10和像素电极9,其中,彩色滤光片10对应像素电极9所在的区域。该阵列基板还包括形成在薄膜晶体管1上方的遮光片8,且钝化层过孔7上方具有与遮光片8同材质的不透光导电金属层薄膜103,像素电极9通过不透光导电金属层薄膜103与薄膜晶体管1的漏电极电性连接。遮光片8的设置可以防止构图工艺中由于曝光量过大对薄膜晶体管1有源层的损坏,从而不会影响薄膜晶体管1的特性。
实施例三
本实施例中提供一种显示装置,该显示装置采用实施例二中的阵列基板,仅通过一次构图工艺形成钝化层过孔的图案,并在该构图工艺的光刻胶剥离过程中形成了遮光片的图案,由于该阵列基板克服了构图工艺中由于曝光量过大对薄膜晶体管有源层的损坏,从而不会影响薄膜晶体管的特性,并且大大降低了在阵列基板上形成彩色滤光片的成本,提高了显示装置的显示品质。
由以上实施例可以看出,本发明所提供的TFT阵列基板及其制造方法、显示装置,仅通过一次构图工艺形成钝化层过孔的图案,然后在该构图工艺的光刻胶剥离过程中形成遮光片的图案,克服了阵列基板的构图工艺中由于曝光量过大对薄膜晶体管有源层的损坏,大大降低了在阵列基板上形成彩色滤光片的成本,保证了TFT的特性,进而不会影响显示装置的显示品质。以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和替换,这些改进和替换也应视为本发明的保护范围。
Claims (9)
1.一种TFT阵列基板的制造方法,其特征在于,包括以下步骤:
S1、在一衬底基板上形成薄膜晶体管;
S2、在完成步骤S1的衬底基板上形成钝化层薄膜;
S3、在完成步骤S2的衬底基板上形成包括钝化层过孔和遮光片的图案;
S4、在完成步骤S3的衬底基板上形成彩色滤光片图案和像素电极图案,所述像素电极通过所述钝化层过孔与所述薄膜晶体管的漏电极电连接,所述彩色滤光片与所述像素电极的位置对应。
2.根据权利要求1所述的TFT阵列基板的制造方法,其特征在于,形成钝化层过孔的图案具体包括:
在完成步骤S2的衬底基板上涂覆一层光刻胶;
采用掩膜版进行曝光,显影,使光刻胶形成光刻胶完全去除区域和光刻胶完全保留区域,其中,光刻胶完全去除区域对应于所述钝化层过孔所在的区域,光刻胶完全保留区域对应于其他图案所在的区域;
刻蚀掉光刻胶完全去除区域的钝化层薄膜,形成钝化层过孔的图案。
3.根据权利要求2所述的TFT阵列基板的制造方法,其特征在于,形成遮光片的图案具体包括:
通过灰化工艺减薄光刻胶完全保留区域的光刻胶高度直至露出所述薄膜晶体管,所述薄膜晶体管的周边区域上方仍保留一定厚度的光刻胶;
在所述薄膜晶体管上方形成不透光导电金属层薄膜;
剥离剩余的光刻胶,在所述薄膜晶体管上方形成遮光片图案,所述钝化层过孔上方仍保留不透光导电金属层薄膜。
4.根据权利要求3所述的TFT阵列基板的制造方法,其特征在于,所述灰化工艺采用的气体中氧气和六氟化硫气体的体积比范围为10~50。
5.根据权利要求1所述的TFT阵列基板的制造方法,其特征在于,步骤S1具体包括:
在一衬底基板上形成横纵交叉分布的栅线和数据线,其中,所述栅线和数据线交叉限定的区域为像素单元区域;所述薄膜晶体管形成在所述像素单元区域内。
6.根据权利要求1所述的TFT阵列基板的制造方法,其特征在于,步骤S4具体包括:
在完成步骤S3的衬底基板上形成红色像素图案、绿色像素图案和蓝色像素图案,所述红色像素、绿色像素和蓝色像素组成所述彩色滤光片;
在所述彩色滤光片上方形成像素电极图案。
7.根据权利要求1所述的TFT阵列基板的制造方法,其特征在于,步骤S4具体包括:
在完成步骤S3的衬底基板上形成像素电极图案;
在所述像素电极图案上方形成红色像素图案、绿色像素图案和蓝色像素图案,所述红色像素、绿色像素和蓝色像素组成所述彩色滤光片。
8.一种采用权利要求1-7所述制造方法制造的TFT阵列基板,包括形成在一衬底基板上的薄膜晶体管、钝化层过孔、彩色滤光片和像素电极,其特征在于,其还包括位于所述薄膜晶体管上方的遮光片,且所述钝化层过孔上方具有与所述遮光片同材质的不透光导电金属层薄膜。
9.一种显示装置,其特征在于,所述显示装置采用权利要求8所述的阵列基板。
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