CN103137575A - 安装电子组件的封装件、电子设备及制造封装件的方法 - Google Patents
安装电子组件的封装件、电子设备及制造封装件的方法 Download PDFInfo
- Publication number
- CN103137575A CN103137575A CN2012104792392A CN201210479239A CN103137575A CN 103137575 A CN103137575 A CN 103137575A CN 2012104792392 A CN2012104792392 A CN 2012104792392A CN 201210479239 A CN201210479239 A CN 201210479239A CN 103137575 A CN103137575 A CN 103137575A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- elongate portion
- fin
- electronic building
- packaging part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
- H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
- H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/461—Leadframes specially adapted for cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-254899 | 2011-11-22 | ||
| JP2011254899A JP5940799B2 (ja) | 2011-11-22 | 2011-11-22 | 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103137575A true CN103137575A (zh) | 2013-06-05 |
Family
ID=47257550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104792392A Pending CN103137575A (zh) | 2011-11-22 | 2012-11-22 | 安装电子组件的封装件、电子设备及制造封装件的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8901580B2 (https=) |
| EP (1) | EP2597678A3 (https=) |
| JP (1) | JP5940799B2 (https=) |
| CN (1) | CN103137575A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466858A (zh) * | 2019-09-09 | 2021-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 大面积led光源封装结构及封装方法 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6008582B2 (ja) * | 2012-05-28 | 2016-10-19 | 新光電気工業株式会社 | 半導体パッケージ、放熱板及びその製造方法 |
| JP6335619B2 (ja) * | 2014-01-14 | 2018-05-30 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
| US9142528B2 (en) | 2014-02-12 | 2015-09-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device with an interlocking structure |
| JP6225812B2 (ja) | 2014-04-18 | 2017-11-08 | 日亜化学工業株式会社 | 発光装置 |
| JP6661890B2 (ja) | 2014-05-21 | 2020-03-11 | 日亜化学工業株式会社 | 発光装置 |
| US10381293B2 (en) * | 2016-01-21 | 2019-08-13 | Texas Instruments Incorporated | Integrated circuit package having an IC die between top and bottom leadframes |
| KR102505443B1 (ko) * | 2017-11-16 | 2023-03-03 | 삼성전기주식회사 | 인쇄회로기판 |
| DE102018123031A1 (de) * | 2018-09-19 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Bauelement und herstellungsverfahren für ein bauelement |
| JP7367418B2 (ja) * | 2019-09-13 | 2023-10-24 | 富士電機株式会社 | 半導体モジュールおよび車両 |
| JP7306294B2 (ja) * | 2020-02-19 | 2023-07-11 | 株式会社デンソー | 半導体モジュール |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10247748A (ja) * | 1997-03-03 | 1998-09-14 | Omron Corp | 発光素子及び当該発光素子を用いた面光源装置 |
| JP4261713B2 (ja) * | 1999-12-20 | 2009-04-30 | パナソニック株式会社 | 熱伝導基板とその製造方法 |
| JP2001210764A (ja) | 2000-01-26 | 2001-08-03 | Matsushita Electric Works Ltd | 熱伝導基板及びその製造方法 |
| JP4286465B2 (ja) | 2001-02-09 | 2009-07-01 | 三菱電機株式会社 | 半導体装置とその製造方法 |
| KR200373718Y1 (ko) * | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
| JP4757477B2 (ja) | 2004-11-04 | 2011-08-24 | 株式会社 日立ディスプレイズ | 光源ユニット、それを用いた照明装置及びそれを用いた表示装置 |
| US9793247B2 (en) | 2005-01-10 | 2017-10-17 | Cree, Inc. | Solid state lighting component |
| KR101298225B1 (ko) * | 2005-06-30 | 2013-08-27 | 페어차일드 세미컨덕터 코포레이션 | 반도체 다이 패키지 및 그의 제조 방법 |
| US8263870B2 (en) | 2005-09-27 | 2012-09-11 | Panasonic Corporation | Heat dissipating wiring board, method for manufacturing same, and electric device using heat dissipating wiring board |
| JP2008041975A (ja) * | 2006-08-08 | 2008-02-21 | Matsushita Electric Ind Co Ltd | 放熱性配線基板およびその製造方法 |
| JP2008085109A (ja) * | 2006-09-28 | 2008-04-10 | Matsushita Electric Ind Co Ltd | 発光ダイオード実装用基板 |
| JP2008098488A (ja) * | 2006-10-13 | 2008-04-24 | Matsushita Electric Ind Co Ltd | 熱伝導基板とその製造方法 |
| JP2008140954A (ja) * | 2006-12-01 | 2008-06-19 | Matsushita Electric Ind Co Ltd | 放熱配線基板とその製造方法並びにこれを用いた発光モジュール |
| JP2008147203A (ja) * | 2006-12-05 | 2008-06-26 | Sanken Electric Co Ltd | 半導体発光装置 |
| JP5233170B2 (ja) | 2007-05-31 | 2013-07-10 | 日亜化学工業株式会社 | 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法 |
| TWI389295B (zh) | 2009-02-18 | 2013-03-11 | 奇力光電科技股份有限公司 | 發光二極體光源模組 |
| JP5010716B2 (ja) * | 2010-01-29 | 2012-08-29 | 株式会社東芝 | Ledパッケージ |
| KR101543333B1 (ko) * | 2010-04-23 | 2015-08-11 | 삼성전자주식회사 | 발광소자 패키지용 리드 프레임, 발광소자 패키지, 및 발광소자 패키지를 채용한 조명장치 |
| JP2012142426A (ja) * | 2010-12-28 | 2012-07-26 | Toshiba Corp | Ledパッケージ及びその製造方法 |
-
2011
- 2011-11-22 JP JP2011254899A patent/JP5940799B2/ja not_active Expired - Fee Related
-
2012
- 2012-11-20 US US13/682,107 patent/US8901580B2/en active Active
- 2012-11-22 CN CN2012104792392A patent/CN103137575A/zh active Pending
- 2012-11-22 EP EP12193921.9A patent/EP2597678A3/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112466858A (zh) * | 2019-09-09 | 2021-03-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | 大面积led光源封装结构及封装方法 |
| CN112466858B (zh) * | 2019-09-09 | 2025-05-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | 大面积led光源封装结构及封装方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5940799B2 (ja) | 2016-06-29 |
| JP2013110298A (ja) | 2013-06-06 |
| EP2597678A2 (en) | 2013-05-29 |
| US8901580B2 (en) | 2014-12-02 |
| EP2597678A3 (en) | 2014-03-05 |
| US20130126916A1 (en) | 2013-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130605 |