CN103137575A - 安装电子组件的封装件、电子设备及制造封装件的方法 - Google Patents

安装电子组件的封装件、电子设备及制造封装件的方法 Download PDF

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Publication number
CN103137575A
CN103137575A CN2012104792392A CN201210479239A CN103137575A CN 103137575 A CN103137575 A CN 103137575A CN 2012104792392 A CN2012104792392 A CN 2012104792392A CN 201210479239 A CN201210479239 A CN 201210479239A CN 103137575 A CN103137575 A CN 103137575A
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CN
China
Prior art keywords
lead frame
elongate portion
fin
electronic building
packaging part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012104792392A
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English (en)
Chinese (zh)
Inventor
荒井直
木村康之
小林敏男
小林和贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
Original Assignee
Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Publication of CN103137575A publication Critical patent/CN103137575A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40Leadframes
    • H10W70/461Leadframes specially adapted for cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN2012104792392A 2011-11-22 2012-11-22 安装电子组件的封装件、电子设备及制造封装件的方法 Pending CN103137575A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-254899 2011-11-22
JP2011254899A JP5940799B2 (ja) 2011-11-22 2011-11-22 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法

Publications (1)

Publication Number Publication Date
CN103137575A true CN103137575A (zh) 2013-06-05

Family

ID=47257550

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012104792392A Pending CN103137575A (zh) 2011-11-22 2012-11-22 安装电子组件的封装件、电子设备及制造封装件的方法

Country Status (4)

Country Link
US (1) US8901580B2 (https=)
EP (1) EP2597678A3 (https=)
JP (1) JP5940799B2 (https=)
CN (1) CN103137575A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466858A (zh) * 2019-09-09 2021-03-09 中国科学院苏州纳米技术与纳米仿生研究所 大面积led光源封装结构及封装方法

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JP6008582B2 (ja) * 2012-05-28 2016-10-19 新光電気工業株式会社 半導体パッケージ、放熱板及びその製造方法
JP6335619B2 (ja) * 2014-01-14 2018-05-30 新光電気工業株式会社 配線基板及び半導体パッケージ
US9142528B2 (en) 2014-02-12 2015-09-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device with an interlocking structure
JP6225812B2 (ja) 2014-04-18 2017-11-08 日亜化学工業株式会社 発光装置
JP6661890B2 (ja) 2014-05-21 2020-03-11 日亜化学工業株式会社 発光装置
US10381293B2 (en) * 2016-01-21 2019-08-13 Texas Instruments Incorporated Integrated circuit package having an IC die between top and bottom leadframes
KR102505443B1 (ko) * 2017-11-16 2023-03-03 삼성전기주식회사 인쇄회로기판
DE102018123031A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Bauelement und herstellungsverfahren für ein bauelement
JP7367418B2 (ja) * 2019-09-13 2023-10-24 富士電機株式会社 半導体モジュールおよび車両
JP7306294B2 (ja) * 2020-02-19 2023-07-11 株式会社デンソー 半導体モジュール

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JPH10247748A (ja) * 1997-03-03 1998-09-14 Omron Corp 発光素子及び当該発光素子を用いた面光源装置
JP4261713B2 (ja) * 1999-12-20 2009-04-30 パナソニック株式会社 熱伝導基板とその製造方法
JP2001210764A (ja) 2000-01-26 2001-08-03 Matsushita Electric Works Ltd 熱伝導基板及びその製造方法
JP4286465B2 (ja) 2001-02-09 2009-07-01 三菱電機株式会社 半導体装置とその製造方法
KR200373718Y1 (ko) * 2004-09-20 2005-01-21 주식회사 티씨오 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드
JP4757477B2 (ja) 2004-11-04 2011-08-24 株式会社 日立ディスプレイズ 光源ユニット、それを用いた照明装置及びそれを用いた表示装置
US9793247B2 (en) 2005-01-10 2017-10-17 Cree, Inc. Solid state lighting component
KR101298225B1 (ko) * 2005-06-30 2013-08-27 페어차일드 세미컨덕터 코포레이션 반도체 다이 패키지 및 그의 제조 방법
US8263870B2 (en) 2005-09-27 2012-09-11 Panasonic Corporation Heat dissipating wiring board, method for manufacturing same, and electric device using heat dissipating wiring board
JP2008041975A (ja) * 2006-08-08 2008-02-21 Matsushita Electric Ind Co Ltd 放熱性配線基板およびその製造方法
JP2008085109A (ja) * 2006-09-28 2008-04-10 Matsushita Electric Ind Co Ltd 発光ダイオード実装用基板
JP2008098488A (ja) * 2006-10-13 2008-04-24 Matsushita Electric Ind Co Ltd 熱伝導基板とその製造方法
JP2008140954A (ja) * 2006-12-01 2008-06-19 Matsushita Electric Ind Co Ltd 放熱配線基板とその製造方法並びにこれを用いた発光モジュール
JP2008147203A (ja) * 2006-12-05 2008-06-26 Sanken Electric Co Ltd 半導体発光装置
JP5233170B2 (ja) 2007-05-31 2013-07-10 日亜化学工業株式会社 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法
TWI389295B (zh) 2009-02-18 2013-03-11 奇力光電科技股份有限公司 發光二極體光源模組
JP5010716B2 (ja) * 2010-01-29 2012-08-29 株式会社東芝 Ledパッケージ
KR101543333B1 (ko) * 2010-04-23 2015-08-11 삼성전자주식회사 발광소자 패키지용 리드 프레임, 발광소자 패키지, 및 발광소자 패키지를 채용한 조명장치
JP2012142426A (ja) * 2010-12-28 2012-07-26 Toshiba Corp Ledパッケージ及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112466858A (zh) * 2019-09-09 2021-03-09 中国科学院苏州纳米技术与纳米仿生研究所 大面积led光源封装结构及封装方法
CN112466858B (zh) * 2019-09-09 2025-05-30 中国科学院苏州纳米技术与纳米仿生研究所 大面积led光源封装结构及封装方法

Also Published As

Publication number Publication date
JP5940799B2 (ja) 2016-06-29
JP2013110298A (ja) 2013-06-06
EP2597678A2 (en) 2013-05-29
US8901580B2 (en) 2014-12-02
EP2597678A3 (en) 2014-03-05
US20130126916A1 (en) 2013-05-23

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Application publication date: 20130605