CN103119699A - 薄膜晶体管及其制造方法和图像显示装置 - Google Patents
薄膜晶体管及其制造方法和图像显示装置 Download PDFInfo
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- CN103119699A CN103119699A CN2011800458989A CN201180045898A CN103119699A CN 103119699 A CN103119699 A CN 103119699A CN 2011800458989 A CN2011800458989 A CN 2011800458989A CN 201180045898 A CN201180045898 A CN 201180045898A CN 103119699 A CN103119699 A CN 103119699A
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- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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Abstract
本发明提供一种通过晶体管元件分离来制造高性能、高稳定的薄膜晶体管的方法。即,本发明提供这样一种薄膜晶体管,其特征在于,具有基板、层积在前述基板上的栅极、层积在前述基板上及前述栅极上的栅绝缘层、设置在前述栅绝缘层上的凹部、形成在前述栅绝缘层的凹部内的半导体层和在彼此分开的位置上与前述半导体层连接的源极及漏极。
Description
技术领域
本发明涉及一种薄膜晶体管及其制造方法以及图像显示装置。
背景技术
随着信息技术的惊人的发展,现在,在笔记本型电脑、移动信息终端等中频繁地进行信息收发。众所周知,不远的将来,能够不分场所地进行信息交换的普适社会就会到来。在那样的社会中,期望有更轻量、更薄的信息终端。
现在,半导体材料的主流为硅类(Si类),但从柔性化、轻量化、低成本化、高性能化等角度出发,使用氧化物半导体的晶体管(氧化物晶体管)的研究在广泛地开展中。通常,使用氧化物半导体时多使用溅射法等真空成膜。
但是,近年来,也有报告提出用涂布法形成氧化物半导体,大面积化、适合使用印刷法、利用塑料基板等之类应用的可能性在扩大。
此外,其应用领域宽,不仅有望用于上述薄型、轻量的柔性显示器,也有望在RFID(Radio Frequency Identification)标签、传感器等中应用。这样,面向普适社会,对涂布型氧化物晶体管的研究就变得必不可少。
出于这种理由,现在,用涂布法进行的氧化物半导体的研究备受注目。
此处,作为由溶液形成半导体层的方法,可以是旋涂法、浸涂法、喷墨法等方法。其中,在配置多个用旋涂法、浸涂法制成的晶体管而成的晶体管阵列中,由于电流容易从晶体管元件之间或晶体管和像素电极之间的半导体层中流过,因此存在关闭状态下的电流(漏电流)值大、开关比降低的问题。
因此,例如在专利文献1中,通过用喷墨法在所需地方形成半导体层而实现晶体管元件分离。此外,在专利文献2中,通过向源极、漏极之间的沟道部中注入半导体溶液而实现晶体管元件分离。
专利文献
专利文献1:日本特开2005-210086号公报
专利文献2:日本特开2004-80026号公报
发明内容
然而,在专利文献2的方法中,要向沟道部注入半导体溶液,就必须形成隔壁,因此,必须在通常的晶体管制造方法之外另外进行隔壁材料的成膜及图案形成工序。
本发明是鉴于上述课题而完成的,提供一种通过实现晶体管元件分离来制造高性能、高稳定的薄膜晶体管的方法。
为了解决前述课题,在本发明中,作为技术方案1的发明,提供一种薄膜晶体管,其特征在于,具有:基板、层积在前述基板上的栅极、层积在前述基板上及前述栅极上的栅绝缘层、设置在前述栅绝缘层上的凹部、形成在前述栅绝缘层的凹部内的半导体层和与前述半导体层在彼此分开的位置上连接的源极及漏极。
此外,技术方案2的发明的特征在于,具有层积在前述半导体层的至少中央部上的保护膜。
还有,技术方案3的发明的特征在于,前述凹部仅形成在可与栅极在厚度方向上相对的位置上。
再有,技术方案4的发明的特征在于,前述半导体层由以金属氧化物为主要成分的材料构成。
另外,技术方案5的发明的特征在于,前述半导体层由以有机物为主要成分的材料构成。
并且,技术方案6的发明提供一种图像显示装置,其特征在于,具有:技术方案1~5中任一项所述的薄膜晶体管、形成在前述薄膜晶体管的前述源极及前述漏极上的层间绝缘膜、形成在前述层间绝缘膜上且与前述漏极电连接的像素电极和包含形成在前述像素电极上的公共电极的显示媒体。
此外,技术方案7的发明的特征在于,前述显示媒体为电泳型反射显示装置、透过型液晶显示装置、反射型液晶显示装置、半透过型液晶显示装置、有机EL显示装置及无机EL显示装置中的任一种。
还有,技术方案8的发明为技术方案1~5中任一项所述的薄膜晶体管的制造方法,其特征在于,具有:在基板上形成栅极的工序、在前述基板上及前述栅极上形成栅绝缘层的工序、在与前述栅极对置的前述栅绝缘层位置上形成凹部的工序、在前述凹部内用涂布法形成半导体层的工序、在前述半导体层的至少中央部上形成保护膜的工序和形成源极及漏极、使它们在前述半导体层的彼此分开的位置上进行连接的的工序。
再有,技术方案9的发明的特征在于,前述涂布法为凸版印刷、凹版印刷、平版印刷、反转胶版印刷、丝网印刷、喷墨、热转印、滴涂(dispenser)、旋涂、模涂(diecoating)、微凹版涂布、浸涂的任一种。
此外,技术方案10的发明的特征在于,前述凹部通过干蚀法形成。
根据本发明,可以通过在栅绝缘层上直接形成凹部而用涂布法在所需的地方上进行半导体层的成膜及晶体管元件分离。
此外,可以稳定地驱动晶体管元件,由于不需要隔壁的形成工序,还可以使制造工序简易化。
附图说明
图1是在位于本发明实施方式的栅极的正上方的栅绝缘层上形成的凹部的部分截面图。
图2是显示本发明实施方式的薄膜晶体管的约1像素份的部分截面图。
图3是使用本发明实施方式的薄膜晶体管的图像显示装置的示意平面图。
图4是本发明实施方式的薄膜晶体管的一部分的排列图。
图5是显示比较例的薄膜晶体管的约1像素份的部分截面图。
图6是使用比较例的薄膜晶体管的图像显示装置的示意平面图。
具体实施方式
下面参照附图对本发明的实施方式进行说明。但对本发明实施方式的薄膜晶体管的结构无特殊限制。
如图1及图2所示,本实施方式的薄膜晶体管包括:基板1、层积在前述基板上的栅极2及电容器电极3、层积在前述基板1上、前述栅极2及前述电容器电极3上的栅绝缘层4、设置在前述栅绝缘层4上的凹部11、形成在前述栅绝缘层4的凹部11内的半导体层5、与前述半导体层5在彼此分开的位置上连接的源极7及漏极8。凹部11形成在栅极2的正上方。此外,多个薄膜晶体管形成在基板1上。
前述凹部11的形状只要使得形成在凹部11内的半导体层5能与源极7、漏极8连接即可,但优选所形成的凹部11至少在栅极2的正上方(与栅极2在厚度方向上相对的位置)不会从栅极2的正上方突出。如图4所示,优选多个凹部11形成在栅极2上,且彼此不连接、分开地形成。作为凹部11的形状,例如有具有与栅极2的长边平行的长边的长方形、椭圆等,但不局限于此,只要是能用作为后述的凹部11的形成方法的干蚀法形成的形状,各种形状均可。
作为本实施方式的基板,具体地,可以使用聚甲基丙烯酸甲酯、聚丙烯酸酯、聚碳酸酯、聚苯乙烯、聚乙烯硫醚(polyethylene sulfide)、聚醚砜、聚烯烃、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、环烯烃聚合物、聚醚砜、三乙酰纤维素、聚氟乙烯膜、乙烯-四氟乙烯共聚树脂、耐候性聚对苯二甲酸乙二醇酯、耐候性聚丙烯、玻璃纤维增强丙烯酸树脂膜、玻璃纤维增强聚碳酸酯、透明性聚酰亚胺、氟系树脂、环状聚烯烃系树脂、玻璃及石英等。但是,本发明的基板1不局限于这些。它们可以单独使用,也可以作为两种以上层积而成的复合基板1使用。
本实施方式的基板1为有机物膜时,为了提高薄膜晶体管的元件的耐久性,可形成透明的阻气层(图中未示出)。作为阻气层,可以是氧化铝(Al2O3)、氧化硅(SiO2)、氮化硅(SiN)、氮氧化硅(SiON)、碳化硅(SiC)及类金刚石碳(DLC)等。但是,本发明的基板1不局限于此。此外,这些阻气层可以两层以上层积后使用。阻气层可以仅形成在使用有机物膜的基板1的单面上,也可以形成在双面上。
阻气层可以使用真空蒸镀法、离子电镀法、溅射法、激光烧蚀法、等离子体CVD(Chemical Vapor Deposition)法、热丝CVD法及溶胶凝胶法等,但本发明不局限于这些方法。
在本实施方式的栅极2、电容器电极3、源极78及漏极89中,可良好地使用氧化铟(In2O3)、氧化锡(SnO2)、氧化锌(ZnO)、氧化镉(CdO)、氧化铟镉(CdIn2O4)、氧化镉锡(Cd2SnO2)、氧化锌锡(Zn2SnO4)、氧化铟锌(In-Zn-O)等氧化物材料。此外,这些氧化物材料中掺杂有杂质会提高导电率,因而优选。例如,氧化铟中掺杂有锡、钼、钛的材料、氧化锡中掺杂有锑、氟的材料、氧化锌中掺杂有铟、铝、镓的材料等。其中,尤其是氧化铟中掺杂有锡的氧化铟锡(俗称ITO)因电阻率低而可特别良好地使用。此外,Au、Ag、Cu、Cr、Al、Mg等金属材料也可良好地使用。此外,也可以使用导电性氧化物材料和低电阻金属材料多层层积而成的材料。
此时,为了防止金属材料的氧化、经时劣化,导电性氧化物薄膜/金属薄膜/导电性氧化物薄膜依次层积而成的三层结构可尤其良好地使用。此外,PEDOT(聚亚乙基二氧噻吩)等有机导电性材料也可良好地使用。栅极2、源极7及漏极8可以是完全同样的材料,此外,也可以是完全不同的材料。但是,为了减少工序数,更优选源极78和漏极89为同样的材料。
这些电极2、3、8、9可通过真空蒸镀法、离子电镀法、溅射法、激光烧蚀法、等离子体CVD(Chemical Vapor Deposition)、光CVD法、热丝CVD法或丝网印刷、凸版印刷、喷墨法等形成,但不局限于这些方法。
用作本实施方式的薄膜晶体管中使用的栅绝缘层4的材料可以是氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钽、氧化钇、氧化铪、铝酸铪、氧化锆、氧化钛等无机材料或PMMA(聚甲基丙烯酸甲酯)等聚丙烯酸酯、PVA(聚乙烯醇)、PS(聚苯乙烯)、透明性聚酰亚胺、聚酯、环氧树脂、聚乙烯基苯酚、聚乙烯醇等,但不局限于此。为了抑制栅漏电流,绝缘材料的电阻率优选在1011Ωcm以上,尤其优选在1014Ωcm以上。
栅绝缘层4可以使用真空蒸镀法、离子电镀法、溅射法、激光烧蚀法、等离子体CVD、光CVD法、热丝CVD法、旋涂、浸涂、丝网印刷等方法形成。在这些栅绝缘层4中,在膜的生长方向上组成有倾斜的也可良好地使用。
如图1~图4所示,形成在本实施方式的薄膜晶体管的栅绝缘层4上的凹部11位于栅极2的正上方且凹部间彼此间隔设置,使用以往的干蚀技术直接形成在栅绝缘层4上。
作为本实施方式的薄膜晶体管中使用的半导体层5,可以使用以有机物或金属氧化物为主要成分的有机半导体材料或氧化物半导体材料,通过将这些材料溶解或分散到溶剂中而成的油墨用涂布法涂布到凹部11上形成有机半导体层或氧化物半导体层。
作为有机半导体材料,可以使用聚噻吩、聚烯丙胺、芴并联噻吩(fluorene-bithiophene)共聚物以及它们的衍生物之类的高分子类有机半导体材料以及并五苯、并四苯、铜酞菁及它们的衍生物之类的低分子类有机半导体材料。然而,考虑到低成本化、柔性化、大面积化,则最好使用能适用涂布法的有机半导体材料。此外,也可以使用碳纳米管或富勒烯等碳化合物、半导体纳米粒分散液等作为半导体材料。
作为用于溶解/分散有机半导体材料的溶剂,可以是四氢呋喃、二氧六环等环醚类溶剂、丙酮、甲乙基酮等酮类溶剂、乙醇、IPA等醇类溶剂、氯仿、1,2-二氯乙烷等卤化烷烃类溶剂、甲苯、二甲苯、二氯苯、三氯苯等芳香族类溶剂、N-甲基吡咯烷酮、环丁砜、二硫化碳,还可以是水等,这些溶剂既可以单独使用,也可以混合使用。
作为形成有机半导体层5的涂布法,可以使用凸版印刷、凹版印刷、平版印刷、反转胶版印刷、丝网印刷、喷墨、热转印、滴涂、旋涂、模涂、微凹版涂布、浸涂等公知的方法。
作为氧化物半导体材料,为含有锌(Zn)、铟(In)、锡(Sn)、钨(W)、镁(Mg)及镓(Ga)中的一种以上元素的氧化物,可以是氧化锌(ZnO)、氧化铟(In2O3)、氧化铟锌(In-Zn-O)、氧化锡(SnO2)、氧化钨(WO)及氧化锌镓铟(In-Ga-Zn-O)等材料,但本发明不局限于这些材料。这些材料的结构可以是单晶、多晶、微晶、晶体与无定形的混晶、有纳米晶体散在的无定形、无定形中的任一种。
作为用于溶解/分散氧化物半导体材料的溶剂,可以是四氢呋喃、二氧六环等环醚类溶剂、丙酮、甲乙基酮等酮类溶剂、乙醇、IPA等醇类溶剂、氯仿、1,2-二氯乙烷等卤化烷烃类溶剂、甲苯、二甲苯、二氯苯、三氯苯等芳香族类溶剂、N-甲基吡咯烷酮、环丁砜、二硫化碳,还可以是水等,这些溶剂既可以单独使用,也可以混合使用。
作为形成氧化物半导体层5的涂布法,可以使用凸版印刷、凹版印刷、平版印刷、反转胶版印刷、丝网印刷、喷墨、热转印、滴涂、旋涂、模涂、微凹版涂布、浸涂等公知的方法。
作为本实施方式的保护膜6所使用的材料,可以是氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钽、氧化钇、氧化铪、铝酸铪、氧化锆、氧化钛等无机材料或PMMA(聚甲基丙烯酸甲酯)等聚丙烯酸酯、PVA(聚乙烯醇)、PS(聚苯乙烯)、透明性聚酰亚胺、聚酯、环氧树脂、聚乙烯基苯酚、聚乙烯醇等,但不局限于此。为了不对薄膜晶体管产生电影响,保护膜6的电阻率优选在1011Ωcm以上,尤其优选在1014Ωcm以上。
保护膜6可以使用真空蒸镀法、离子电镀法、溅射法、激光烧蚀法、等离子体CVD、光CVD法、热丝CVD法、旋涂、浸涂、丝网印刷等方法形成。在这些保护膜6中,在膜的生长方向上组成有倾斜的也可良好地使用。
(图像显示装置)
接着,参照图3对使用图2所示的薄膜晶体管的图像显示装置进行说明。
如图3所示,图像显示装置具有上述薄膜晶体管、形成在前述薄膜晶体管的前述源极7及前述漏极8上的层间绝缘膜9、形成在前述层间绝缘膜9上且电连接在前述漏极8上的像素电极10和包含形成在前述像素电极10上的公共电极的显示媒体。
作为本实施方式的层间绝缘膜9,例如可以是氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钽、氧化钇、氧化铪、铝酸铪、氧化锆及氧化钛等无机材料或PMMA(聚甲基丙烯酸甲酯)等聚丙烯酸酯、PVA(聚乙烯醇)、PS(聚苯乙烯)、透明性聚酰亚胺、聚酯、环氧树脂及聚乙烯基苯酚等有机材料,但在本发明中不局限于此。
层间绝缘膜9既可以与栅绝缘层4为同样的材料,也可以是不同的材料。这些层间绝缘膜9既可以单层使用,也可以使用多层层积而成的层积体。
层间绝缘膜9可以使用真空蒸镀法、离子电镀法、溅射法、激光烧蚀法、等离子体CVD、光CVD法、热丝CVD法、旋涂法、浸涂法、丝网印刷法等方法形成,但在本发明中不局限于此。
本实施方式的像素电极10必须与薄膜晶体管的漏极8电连接。具体而言,可以是用丝网印刷法等图案印刷层间绝缘膜9、不在漏极8的部分上设置层间绝缘膜9的方法或在整个面上涂布层间绝缘膜9,然后用激光束等在层间绝缘膜9上打孔的方法等,但本发明不局限于此。
作为与本发明的薄膜晶体管组合的显示媒体(显示装置),可以是电泳型反射显示装置、透过型液晶显示装置、反射型液晶显示装置、半透过型液晶显示装置、有机EL显示装置及无机EL显示装置等。
(实施例1)
本发明者制作了通过在栅绝缘层4上直接形成凹部11(实施例)、用涂布法以膜的方式形成半导体活性层(半导体层5)而成的图像显示装置(图3)和通过在栅绝缘层上另外形成隔壁(比较例)、用涂布法以膜的方式形成半导体活性层而成的图像显示装置(图6),对两者特性的关系进行了研究。
此外,本发明者使用氮氧化硅(SiON)作为栅绝缘层4的材料、使用In-Zn-O系氧化物作为半导体层5的材料、使用聚酰亚胺作为隔壁材料,制成了图像显示装置。
在基板1上用直流磁控溅射法形成100nm的ITO膜,涂布感光性光阻剂后,曝光,通过显影液进行显影,用盐酸进行蚀刻,用剥离液剥离感光型光阻剂,进行ITO的图案形成,形成栅极2及电容器电极3(下面称作光刻法)。接着,用射频磁控溅射法以膜的方式形成了与基板1相接的由SiON构成的栅绝缘层4(膜厚400nm)。成膜后,涂布感光性光阻剂,之后进行曝光,用显影液进行显影,通过反应离子刻蚀(下面称作RIE)在栅极2的正上方分开地、在栅绝缘层4上直接形成了凹部11(蚀刻量40nm)。
接着,用喷墨法将In-Zn-O系氧化物溶液直接注入到凹部11(膜厚40nm)中。注入后,在400℃通过热板实施了30分钟退火处理。再用射频磁控溅射法形成了由SiON构成的保护膜6(膜厚80nm)。由于半导体层5与源极7以及半导体层5与漏极8必须电接触,因此,在涂布感光性光阻剂后,曝光,用显影液进行显影,用RIE形成了保护膜6,并使保护膜6仅残留在半导体层5中央。用直流磁控溅射法形成100nm的ITO膜,并形成了源极7和漏极8。进一步用旋涂法形成由环氧树脂构成的层间绝缘层9(3μm),用光刻法形成作为漏极8与像素电极10的接触处的开口部,用直流磁控溅射法形成厚100nm的ITO膜,图案形成为所希望的形状,制成薄膜晶体管作为像素电极10。在制成的薄膜晶体管上贴附电泳式电子纸前面板作为显示媒体12,制成图像显示装置。
(比较例)
如图5及图6所示,在基板1上用直流磁控溅射法形成100nm的ITO膜,用光刻法制成栅极2及电容器电极3。接着,用射频磁控溅射法形成与基板1连接的由SiON构成的栅绝缘层4(膜厚200nm)。接着,形成隔壁13。在整个面上旋涂正型感光性聚酰亚胺(东丽公司生产的Photonics DL-1000)。为了使隔壁13的高度为40nm,涂布40nnm厚的感光性聚酰亚胺。接着,将涂布在整个面上的感光性聚酰亚胺用光刻法曝光,显影,形成了配置在栅绝缘层4上的隔壁13。隔壁13的图案在230℃下用烘箱烧成30分钟。接着,用喷墨法将In-Zn-O系氧化物溶液直接注入凹部11(膜厚40nm)中。注入后,用热板在400℃实施退火处理。再用射频磁控溅射法形成由SiON构成的保护膜6(膜厚80nm)。由于半导体层5与源极7以及半导体层5与漏极8必须电接触,因此,在涂布感光性光阻剂后进行曝光,用显影液进行显影,用RIE形成了保护膜6,并使保护膜6仅残留在半导体层5中央。用直流磁控溅射法形成100nm的ITO膜,形成了源极7和漏极8。再用旋涂法形成由环氧树脂构成的层间绝缘膜9(3μm),用光刻法形成作为漏极8与像素电极10的接触处的开口部,用直流磁控溅射法形成膜厚100nm的ITO,图案形成为所希望的形状,制成薄膜晶体管作为像素电极10。在制成的薄膜晶体管上贴附电泳式电子纸前面板作为显示媒体12,制成图像显示装置。
驱动图像显示装置,结果,未设置隔壁13的图像显示装置也能显示与设置有隔壁13的图像显示装置同等良好的图像。
通过在栅绝缘层4上直接设置凹部11,与以往的图像显示装置相比,可以省略隔壁13的制作工序,而且能用涂布法在所希望的地方形成半导体溶液,进行晶体管元件分离。结果,能使显示稳定的特性的薄膜晶体管的制造工序简易化。
符号说明
1 基板
2 栅极
3 电容器电极
4 栅绝缘层
5 半导体层
6 保护膜
7 源极
8 漏极
9 层间绝缘膜
10 像素电极
11 凹部
12 显示媒体
13 隔壁
Claims (10)
1.薄膜晶体管,其特征在于,具有基板、
层积在所述基板上的栅极、
层积在所述基板上及所述栅极上的栅绝缘层、
设置在所述栅绝缘层上的凹部、
形成在所述栅绝缘层的凹部内的半导体层和
在彼此分开的位置上与所述半导体层连接的源极及漏极。
2.根据权利要求1所述的薄膜晶体管,其特征在于,设置有层积在所述半导体层的至少中央部上的保护膜。
3.根据权利要求1或2所述的薄膜晶体管,其特征在于,所述凹部仅形成在可与栅极在厚度方向上相对的位置上。
4.根据权利要求1~3中任一项所述的薄膜晶体管,其特征在于,所述半导体层由以金属氧化物为主要成分的材料构成。
5.根据权利要求1~3中任一项所述的薄膜晶体管,其特征在于,所述半导体层由以有机物为主要成分的材料构成。
6.图像显示装置,其特征在于,具有权利要求1~5中任一项所述的薄膜晶体管、
形成在所述薄膜晶体管的所述源极及所述漏极上的层间绝缘膜、
形成在所述层间绝缘膜上且与所述漏极电连接的像素电极和
包含形成在所述像素电极上的公共电极的显示媒体。
7.根据权利要求6所述的图像显示装置,其特征在于,所述显示媒体为电泳型反射显示装置、透过型液晶显示装置、反射型液晶显示装置、半透过型液晶显示装置、有机EL显示装置及无机EL显示装置中的任一种。
8.薄膜晶体管的制造方法,其是权利要求1~5中任一项所述的薄膜晶体管的制造方法,其特征在于,具有在基板上形成栅极的工序、
在所述基板上及所述栅极上形成栅绝缘层的工序、
在与所述栅极对置的所述栅绝缘层位置上形成凹部的工序、
在所述凹部内用涂布法形成半导体层的工序、
在所述半导体层的至少中央部上形成保护膜的工序和
形成源极及漏极、使它们在所述半导体层的彼此分开的位置上进行连接的工序。
9.根据权利要求8所述的薄膜晶体管的制造方法,其特征在于,所述涂布法为凸版印刷、凹版印刷、平版印刷、反转胶版印刷、丝网印刷、喷墨、热转印、滴涂、旋涂、模涂、微凹版涂布、浸涂中的任一种。
10.根据权利要求8或9所述的薄膜晶体管的制造方法,其特征在于,所述凹部通过干蚀法形成。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355664A (zh) * | 2015-12-17 | 2016-02-24 | 深圳市华星光电技术有限公司 | 氧化物薄膜晶体管及其制作方法 |
CN106057827A (zh) * | 2016-08-12 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107994129A (zh) * | 2017-11-20 | 2018-05-04 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板的制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103165471A (zh) * | 2013-02-19 | 2013-06-19 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法和显示装置 |
CN105097429B (zh) | 2014-04-24 | 2018-03-02 | 清华大学 | 碳纳米管复合膜的制备方法 |
CN105097428B (zh) | 2014-04-24 | 2017-12-01 | 清华大学 | 碳纳米管复合膜 |
CN105097939B (zh) * | 2014-04-24 | 2018-08-17 | 清华大学 | 薄膜晶体管 |
TW201628200A (zh) * | 2014-10-28 | 2016-08-01 | Toppan Printing Co Ltd | 薄膜電晶體陣列及其製造方法 |
CN105679676A (zh) * | 2016-03-01 | 2016-06-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板 |
US10743413B2 (en) * | 2018-02-07 | 2020-08-11 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Flexible substrate and method for manufacturing same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09139508A (ja) * | 1995-11-10 | 1997-05-27 | Toyota Motor Corp | 薄膜トランジスタの製造方法 |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
JP2007250842A (ja) * | 2006-03-16 | 2007-09-27 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法 |
US20100117076A1 (en) * | 2008-11-07 | 2010-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1140814A (ja) * | 1997-07-18 | 1999-02-12 | Furontetsuku:Kk | 薄膜トランジスタ基板と液晶表示装置および薄膜トランジスタ基板の製造方法 |
JP4618990B2 (ja) | 2002-08-02 | 2011-01-26 | 株式会社半導体エネルギー研究所 | 有機薄膜トランジスタ及びその作製方法、並びに有機薄膜トランジスタを有する半導体装置 |
JP4836446B2 (ja) | 2003-12-26 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2006186293A (ja) * | 2004-12-02 | 2006-07-13 | Toppan Printing Co Ltd | 薄膜トランジスタの製造方法 |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
KR20080066342A (ko) * | 2007-01-12 | 2008-07-16 | 엘지전자 주식회사 | 박막 트랜지스터 및 그의 제조방법 |
JP2008235871A (ja) * | 2007-02-20 | 2008-10-02 | Canon Inc | 薄膜トランジスタの形成方法及び表示装置 |
KR101385464B1 (ko) * | 2007-05-14 | 2014-04-21 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이와 그 제조방법 |
JP2009049340A (ja) * | 2007-08-23 | 2009-03-05 | Epson Imaging Devices Corp | 電気光学装置及びその製造方法 |
-
2011
- 2011-09-05 JP JP2012534985A patent/JP5835221B2/ja not_active Expired - Fee Related
- 2011-09-05 KR KR1020137007143A patent/KR101949538B1/ko active IP Right Grant
- 2011-09-05 WO PCT/JP2011/070131 patent/WO2012039272A1/ja active Application Filing
- 2011-09-05 CN CN201180045898.9A patent/CN103119699B/zh not_active Expired - Fee Related
- 2011-09-21 TW TW100133855A patent/TWI566411B/zh not_active IP Right Cessation
-
2013
- 2013-03-05 US US13/786,039 patent/US8963141B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09139508A (ja) * | 1995-11-10 | 1997-05-27 | Toyota Motor Corp | 薄膜トランジスタの製造方法 |
CN1987622A (zh) * | 2005-12-23 | 2007-06-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管液晶显示器的阵列基板结构及其制造方法 |
JP2007250842A (ja) * | 2006-03-16 | 2007-09-27 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法 |
US20100117076A1 (en) * | 2008-11-07 | 2010-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355664A (zh) * | 2015-12-17 | 2016-02-24 | 深圳市华星光电技术有限公司 | 氧化物薄膜晶体管及其制作方法 |
CN106057827A (zh) * | 2016-08-12 | 2016-10-26 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107994129A (zh) * | 2017-11-20 | 2018-05-04 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板的制备方法 |
US10622417B2 (en) | 2017-11-20 | 2020-04-14 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of a flexible OLED display panel |
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US20130181200A1 (en) | 2013-07-18 |
KR101949538B1 (ko) | 2019-02-18 |
KR20130108559A (ko) | 2013-10-04 |
TW201222824A (en) | 2012-06-01 |
TWI566411B (zh) | 2017-01-11 |
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