CN103109342B - 用于等离子体处理衬底的技术 - Google Patents

用于等离子体处理衬底的技术 Download PDF

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Publication number
CN103109342B
CN103109342B CN201180028561.7A CN201180028561A CN103109342B CN 103109342 B CN103109342 B CN 103109342B CN 201180028561 A CN201180028561 A CN 201180028561A CN 103109342 B CN103109342 B CN 103109342B
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power
plasma
pulse
substrate
bias
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CN103109342A (zh
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海伦·梅纳德
卡莫尔·哈迪德
维克拉姆·辛
提摩太·J·米勒
卢多维克·葛特
乔治·D·帕帕守尔艾迪斯
伯纳德·G·琳赛
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201180028561.7A 2010-06-11 2011-06-13 用于等离子体处理衬底的技术 Active CN103109342B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US35395310P 2010-06-11 2010-06-11
US61/353,953 2010-06-11
US13/157,005 US9123509B2 (en) 2007-06-29 2011-06-09 Techniques for plasma processing a substrate
US13/157,005 2011-06-09
PCT/US2011/040206 WO2011156813A1 (en) 2010-06-11 2011-06-13 Techniques for plasma processing a substrate

Publications (2)

Publication Number Publication Date
CN103109342A CN103109342A (zh) 2013-05-15
CN103109342B true CN103109342B (zh) 2016-10-12

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US (1) US9123509B2 (https=)
JP (1) JP5896572B2 (https=)
KR (1) KR101811364B1 (https=)
CN (1) CN103109342B (https=)
TW (1) TWI562226B (https=)
WO (1) WO2011156813A1 (https=)

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