CN103095281B - 输出缓冲器，其操作方法及包括输出缓冲器的设备 - Google Patents

输出缓冲器，其操作方法及包括输出缓冲器的设备 Download PDF

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Publication number
CN103095281B
CN103095281B CN201210427356.4A CN201210427356A CN103095281B CN 103095281 B CN103095281 B CN 103095281B CN 201210427356 A CN201210427356 A CN 201210427356A CN 103095281 B CN103095281 B CN 103095281B
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voltage
signal
circuit
response
control signal
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CN103095281A (zh
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李丞镐
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
CN201210427356.4A 2011-11-07 2012-10-31 输出缓冲器，其操作方法及包括输出缓冲器的设备 Active CN103095281B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020110115101A KR101825114B1 (ko) 2011-11-07 2011-11-07 출력 버퍼와 상기 출력 버퍼를 포함하는 장치들
KR10-2011-0115101 2011-11-07

Publications (2)

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CN103095281A CN103095281A (zh) 2013-05-08
CN103095281B true CN103095281B (zh) 2018-01-23

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CN201210427356.4A Active CN103095281B (zh) 2011-11-07 2012-10-31 输出缓冲器，其操作方法及包括输出缓冲器的设备

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Country Link
US (1) US8791722B2 (enExample)
JP (1) JP5963644B2 (enExample)
KR (1) KR101825114B1 (enExample)
CN (1) CN103095281B (enExample)

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WO2015047230A1 (en) * 2013-09-24 2015-04-02 Intel Corporation High-voltage tolerant input voltage buffer circuit
US9362912B2 (en) * 2014-03-25 2016-06-07 SK Hynix Inc. Data output circuit of semiconductor apparatus
US9746866B2 (en) * 2014-05-22 2017-08-29 Mediatek Inc. Control circuit and control system
US9419615B2 (en) * 2015-01-20 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Driver circuit
CN106788386B (zh) * 2016-11-30 2021-08-06 上海华力微电子有限公司 一种降低热载流子劣化的电平转换电路
US10128835B2 (en) * 2017-02-20 2018-11-13 Stmicroelectronics International N.V. Aging tolerant I/O driver
US10484041B2 (en) * 2017-09-13 2019-11-19 Xilinx, Inc. Glitch-free wide supply range transceiver for integrated circuits
US10903840B2 (en) * 2018-04-02 2021-01-26 Mediatek Inc. Pad tracking circuit for high-voltage input-tolerant output buffer
CN111524542B (zh) * 2019-02-01 2022-04-01 华邦电子股份有限公司 缓冲输出电路及其驱动方法
US10911044B1 (en) * 2019-12-05 2021-02-02 Integrated Silicon Solution, (Cayman) Inc. Wide range output driver circuit for semiconductor device
KR102702558B1 (ko) * 2022-01-24 2024-09-04 주식회사 피델릭스 출력 신호의 스윙폭 조절이 용이한 출력 버퍼 회로
KR102694728B1 (ko) * 2022-07-18 2024-08-13 주식회사 피델릭스 전송 데이터 신호의 스윙폭을 감소하여 전류 소모를 저감하는 반도체 메모리 장치의 데이터 전송 시스템

Citations (3)

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US20020034103A1 (en) * 2000-09-18 2002-03-21 Nobuaki Otsuka Semiconductor device with impedance controllable output buffer
US6624716B2 (en) * 2002-01-03 2003-09-23 Raytheon Company Microstrip to circular waveguide transition with a stripline portion
CN101908879A (zh) * 2009-06-08 2010-12-08 联发科技股份有限公司 缓冲电路

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US5124585A (en) * 1991-01-16 1992-06-23 Jun Kim Pulsed bootstrapping output buffer and associated method
US5332932A (en) * 1991-09-16 1994-07-26 Advanced Micro Devices, Inc. Output driver circuit having reduced VSS/VDD voltage fluctuations
US5220209A (en) * 1991-09-27 1993-06-15 National Semiconductor Corporation Edge rate controlled output buffer circuit with controlled charge storage
KR960006911B1 (ko) * 1992-12-31 1996-05-25 현대전자산업주식회사 데이타 출력버퍼
US5331593A (en) * 1993-03-03 1994-07-19 Micron Semiconductor, Inc. Read circuit for accessing dynamic random access memories (DRAMS)
KR960009247B1 (en) * 1993-06-08 1996-07-16 Samsung Electronics Co Ltd Data output buffer of semiconductor integrated circuit
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US6288563B1 (en) * 1998-12-31 2001-09-11 Intel Corporation Slew rate control
KR100310418B1 (ko) * 1999-01-18 2001-11-02 김영환 데이타 출력버퍼
KR100810611B1 (ko) 2006-05-15 2008-03-07 삼성전자주식회사 반도체 장치의 레벨 쉬프팅 회로
JP5262217B2 (ja) 2008-03-24 2013-08-14 セイコーエプソン株式会社 電圧選択回路、電気泳動表示装置、及び電子機器
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020034103A1 (en) * 2000-09-18 2002-03-21 Nobuaki Otsuka Semiconductor device with impedance controllable output buffer
US6624716B2 (en) * 2002-01-03 2003-09-23 Raytheon Company Microstrip to circular waveguide transition with a stripline portion
CN101908879A (zh) * 2009-06-08 2010-12-08 联发科技股份有限公司 缓冲电路

Also Published As

Publication number Publication date
CN103095281A (zh) 2013-05-08
JP5963644B2 (ja) 2016-08-03
US8791722B2 (en) 2014-07-29
KR20130049998A (ko) 2013-05-15
JP2013102430A (ja) 2013-05-23
US20130113542A1 (en) 2013-05-09
KR101825114B1 (ko) 2018-03-14

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