CN103094321A - 二维屏蔽栅晶体管器件及其制备方法 - Google Patents
二维屏蔽栅晶体管器件及其制备方法 Download PDFInfo
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- CN103094321A CN103094321A CN2012104183407A CN201210418340A CN103094321A CN 103094321 A CN103094321 A CN 103094321A CN 2012104183407 A CN2012104183407 A CN 2012104183407A CN 201210418340 A CN201210418340 A CN 201210418340A CN 103094321 A CN103094321 A CN 103094321A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 238000000034 method Methods 0.000 claims description 34
- 238000009413 insulation Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 8
- 230000001413 cellular effect Effects 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 4
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- 241001354791 Baliga Species 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/286,733 US8759908B2 (en) | 2011-11-01 | 2011-11-01 | Two-dimensional shielded gate transistor device and method of manufacture |
US13/286,733 | 2011-11-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103094321A true CN103094321A (zh) | 2013-05-08 |
CN103094321B CN103094321B (zh) | 2015-06-24 |
Family
ID=48171505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210418340.7A Active CN103094321B (zh) | 2011-11-01 | 2012-10-26 | 二维屏蔽栅晶体管器件及其制备方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8759908B2 (zh) |
CN (1) | CN103094321B (zh) |
TW (1) | TWI515900B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104518028A (zh) * | 2014-08-13 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 基于屏蔽栅结构的沟槽栅mosfet |
CN108321193A (zh) * | 2018-02-05 | 2018-07-24 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
WO2019007319A1 (zh) * | 2017-07-03 | 2019-01-10 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN109216452A (zh) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN110491935A (zh) * | 2019-08-31 | 2019-11-22 | 电子科技大学 | 具有高沟道密度的分离栅vdmos器件及制造方法 |
CN112750815A (zh) * | 2019-10-30 | 2021-05-04 | 安世有限公司 | 组合的mcd和mos晶体管半导体器件 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8697520B2 (en) | 2012-03-02 | 2014-04-15 | Alpha & Omega Semiconductor Incorporationed | Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS |
US9818743B2 (en) * | 2013-06-21 | 2017-11-14 | Infineon Technologies Americas Corp. | Power semiconductor device with contiguous gate trenches and offset source trenches |
US9595587B2 (en) | 2014-04-23 | 2017-03-14 | Alpha And Omega Semiconductor Incorporated | Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs |
US9337328B1 (en) * | 2014-12-03 | 2016-05-10 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFETs with closed cell layout |
US9412810B2 (en) * | 2014-12-03 | 2016-08-09 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFETs with closed cell layout having shielded gate |
US9293527B1 (en) * | 2014-12-03 | 2016-03-22 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFET structure |
US9570605B1 (en) * | 2016-05-09 | 2017-02-14 | Nxp B.V. | Semiconductor device having a plurality of source lines being laid in both X and Y directions |
US10388781B2 (en) | 2016-05-20 | 2019-08-20 | Alpha And Omega Semiconductor Incorporated | Device structure having inter-digitated back to back MOSFETs |
US10446545B2 (en) | 2016-06-30 | 2019-10-15 | Alpha And Omega Semiconductor Incorporated | Bidirectional switch having back to back field effect transistors |
US10056461B2 (en) | 2016-09-30 | 2018-08-21 | Alpha And Omega Semiconductor Incorporated | Composite masking self-aligned trench MOSFET |
US10103140B2 (en) | 2016-10-14 | 2018-10-16 | Alpha And Omega Semiconductor Incorporated | Switch circuit with controllable phase node ringing |
US10199492B2 (en) | 2016-11-30 | 2019-02-05 | Alpha And Omega Semiconductor Incorporated | Folded channel trench MOSFET |
TWI686903B (zh) * | 2019-02-01 | 2020-03-01 | 綠星電子股份有限公司 | 斷閘極金氧半場效電晶體的閘極結構及其製造方法 |
DE102022118545B4 (de) | 2022-07-25 | 2024-07-18 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren zur Herstellung einer Leistungshalbleitervorrichtung |
WO2024053267A1 (ja) * | 2022-09-06 | 2024-03-14 | ローム株式会社 | 半導体装置 |
Citations (6)
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US5574302A (en) * | 1994-12-27 | 1996-11-12 | United Microelectronics Corporation | Field effect transistor structure of a diving channel device |
CN1543676A (zh) * | 2001-08-08 | 2004-11-03 | ��ʥ�� | 可升级的自对齐双浮动栅极存储单元阵列以及形成该阵列的方法 |
JP2005116985A (ja) * | 2003-10-10 | 2005-04-28 | Toyota Motor Corp | トレンチゲート型半導体装置 |
US20050133861A1 (en) * | 2003-12-22 | 2005-06-23 | Matsushita Elecric Industrial Co., Ltd. | Vertical gate semiconductor device and method for fabricating the same |
CN101375400A (zh) * | 2006-02-17 | 2009-02-25 | 万国半导体股份有限公司 | 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 |
US20090200559A1 (en) * | 2008-02-13 | 2009-08-13 | Denso Corporation | Silicon carbide semiconductor device including deep layer |
Family Cites Families (1)
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US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
-
2011
- 2011-11-01 US US13/286,733 patent/US8759908B2/en active Active
-
2012
- 2012-10-26 TW TW101139753A patent/TWI515900B/zh active
- 2012-10-26 CN CN201210418340.7A patent/CN103094321B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5574302A (en) * | 1994-12-27 | 1996-11-12 | United Microelectronics Corporation | Field effect transistor structure of a diving channel device |
CN1543676A (zh) * | 2001-08-08 | 2004-11-03 | ��ʥ�� | 可升级的自对齐双浮动栅极存储单元阵列以及形成该阵列的方法 |
JP2005116985A (ja) * | 2003-10-10 | 2005-04-28 | Toyota Motor Corp | トレンチゲート型半導体装置 |
US20050133861A1 (en) * | 2003-12-22 | 2005-06-23 | Matsushita Elecric Industrial Co., Ltd. | Vertical gate semiconductor device and method for fabricating the same |
CN101375400A (zh) * | 2006-02-17 | 2009-02-25 | 万国半导体股份有限公司 | 保护栅极沟槽式金属氧化物半导体场效应晶体管组件及其制造方法 |
US20090200559A1 (en) * | 2008-02-13 | 2009-08-13 | Denso Corporation | Silicon carbide semiconductor device including deep layer |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104518028A (zh) * | 2014-08-13 | 2015-04-15 | 上海华虹宏力半导体制造有限公司 | 基于屏蔽栅结构的沟槽栅mosfet |
WO2019007319A1 (zh) * | 2017-07-03 | 2019-01-10 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN109216432A (zh) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN109216452A (zh) * | 2017-07-03 | 2019-01-15 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN109216452B (zh) * | 2017-07-03 | 2021-11-05 | 无锡华润上华科技有限公司 | 沟槽型功率器件及其制备方法 |
CN108321193A (zh) * | 2018-02-05 | 2018-07-24 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
CN108321193B (zh) * | 2018-02-05 | 2019-12-10 | 电子科技大学 | 一种沟槽栅电荷存储型igbt及其制作方法 |
CN110491935A (zh) * | 2019-08-31 | 2019-11-22 | 电子科技大学 | 具有高沟道密度的分离栅vdmos器件及制造方法 |
CN112750815A (zh) * | 2019-10-30 | 2021-05-04 | 安世有限公司 | 组合的mcd和mos晶体管半导体器件 |
CN112750815B (zh) * | 2019-10-30 | 2023-09-29 | 安世有限公司 | 组合的mcd和mos晶体管半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
TWI515900B (zh) | 2016-01-01 |
TW201320348A (zh) | 2013-05-16 |
US20130105886A1 (en) | 2013-05-02 |
CN103094321B (zh) | 2015-06-24 |
US8759908B2 (en) | 2014-06-24 |
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