CN103094301B - 金属氧化物阻变存储器及制造方法 - Google Patents
金属氧化物阻变存储器及制造方法 Download PDFInfo
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- CN103094301B CN103094301B CN201110344168.0A CN201110344168A CN103094301B CN 103094301 B CN103094301 B CN 103094301B CN 201110344168 A CN201110344168 A CN 201110344168A CN 103094301 B CN103094301 B CN 103094301B
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- memory medium
- resistive memory
- medium layer
- metal oxide
- crystalline substrate
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 55
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 8
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 37
- 238000005275 alloying Methods 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 9
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Semiconductor Memories (AREA)
Abstract
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Priority Applications (1)
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CN201110344168.0A CN103094301B (zh) | 2011-11-04 | 2011-11-04 | 金属氧化物阻变存储器及制造方法 |
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CN201110344168.0A CN103094301B (zh) | 2011-11-04 | 2011-11-04 | 金属氧化物阻变存储器及制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103094301A CN103094301A (zh) | 2013-05-08 |
CN103094301B true CN103094301B (zh) | 2015-10-14 |
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CN201110344168.0A Active CN103094301B (zh) | 2011-11-04 | 2011-11-04 | 金属氧化物阻变存储器及制造方法 |
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CN (1) | CN103094301B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110010615B (zh) * | 2019-03-29 | 2021-01-22 | 上海华虹宏力半导体制造有限公司 | Sonos存储器的制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5700716A (en) * | 1996-02-23 | 1997-12-23 | Micron Technology, Inc. | Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers |
CN101924068A (zh) * | 2009-06-11 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | 电阻存储器、含有电阻存储器的集成电路的制作方法 |
CN102017146A (zh) * | 2008-05-01 | 2011-04-13 | 分子间公司 | 非易失性阻变存储器 |
CN102044631A (zh) * | 2009-10-19 | 2011-05-04 | 旺宏电子股份有限公司 | 存储器及其制造方法 |
CN102082160A (zh) * | 2007-12-17 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种非挥发性阻抗存储器及其制造方法 |
CN102169956A (zh) * | 2010-02-25 | 2011-08-31 | 复旦大学 | 一种氧化钨基电阻型存储器及其制备方法 |
-
2011
- 2011-11-04 CN CN201110344168.0A patent/CN103094301B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5700716A (en) * | 1996-02-23 | 1997-12-23 | Micron Technology, Inc. | Method for forming low contact resistance contacts, vias, and plugs with diffusion barriers |
CN102082160A (zh) * | 2007-12-17 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | 一种非挥发性阻抗存储器及其制造方法 |
CN102017146A (zh) * | 2008-05-01 | 2011-04-13 | 分子间公司 | 非易失性阻变存储器 |
CN101924068A (zh) * | 2009-06-11 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | 电阻存储器、含有电阻存储器的集成电路的制作方法 |
CN102044631A (zh) * | 2009-10-19 | 2011-05-04 | 旺宏电子股份有限公司 | 存储器及其制造方法 |
CN102169956A (zh) * | 2010-02-25 | 2011-08-31 | 复旦大学 | 一种氧化钨基电阻型存储器及其制备方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140110 |
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Effective date of registration: 20140110 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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