CN103080116A - 一类苝四羧酸二酰亚胺有机半导体材料及其制备方法和应用 - Google Patents

一类苝四羧酸二酰亚胺有机半导体材料及其制备方法和应用 Download PDF

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CN103080116A
CN103080116A CN2010800689476A CN201080068947A CN103080116A CN 103080116 A CN103080116 A CN 103080116A CN 2010800689476 A CN2010800689476 A CN 2010800689476A CN 201080068947 A CN201080068947 A CN 201080068947A CN 103080116 A CN103080116 A CN 103080116A
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semiconducting materials
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benzene
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CN103080116B (zh
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周明杰
黄杰
管榕
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Oceans King Lighting Science and Technology Co Ltd
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Abstract

公开了由下式（I）所示的苝四羧酸二酰亚胺有机半导体材料，属于光电子材料领域。在式（I）中，n为1-100之间的整数；R1、R2或R3为氢、C1-C20烷基、C1-C20烷氧基、苯基或烷氧基苯基；R4或R5为C1-C20烷基；R6或R7为氢、C1-C20烷基、C1-C20烷氧基或苯基。还公开了所述苝四羧酸二酰亚胺有机半导体材料的制备方法和应用。

Description

PCT国内申请，说明书已公开。

Claims (1)

  1. PCT国内申请，权利要求书已公开。
CN201080068947.6A 2010-09-10 2010-09-10 一类苝四羧酸二酰亚胺有机半导体材料及其制备方法和应用 Active CN103080116B (zh)

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JP5859872B2 (ja) 2012-02-17 2016-02-16 富士フイルム株式会社 有機光電変換素子組成物、これを含む薄膜、光電池、これに用いられる有機半導体ポリマー、化合物およびポリマーの製造方法
EP2680336A1 (en) * 2012-06-25 2014-01-01 Tata Steel Nederland Technology B.V. Photoactive material having an imide based conjugated backbone
CN105378962B (zh) * 2013-07-19 2017-06-27 富士胶片株式会社 有机膜晶体管、有机半导体膜及有机半导体材料以及它们的应用
JP5972229B2 (ja) * 2013-07-19 2016-08-17 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
JP5972230B2 (ja) * 2013-07-19 2016-08-17 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
CN107057065B (zh) * 2017-02-16 2020-01-14 中山大学 具有低介电常数的聚合物及降低聚合物介电常数的分子结构设计方法

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EP2615097A4 (en) 2014-07-30
CN103080116B (zh) 2015-10-21
EP2615097A1 (en) 2013-07-17
US8598302B2 (en) 2013-12-03
JP2013544897A (ja) 2013-12-19
JP5775587B2 (ja) 2015-09-09
WO2012031403A1 (zh) 2012-03-15
US20130165616A1 (en) 2013-06-27
EP2615097B1 (en) 2015-03-04

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