CN103069574B - 光伏发电设备及其制造方法 - Google Patents

光伏发电设备及其制造方法 Download PDF

Info

Publication number
CN103069574B
CN103069574B CN201180039063.2A CN201180039063A CN103069574B CN 103069574 B CN103069574 B CN 103069574B CN 201180039063 A CN201180039063 A CN 201180039063A CN 103069574 B CN103069574 B CN 103069574B
Authority
CN
China
Prior art keywords
light absorbing
power generation
separator
photovoltaic power
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180039063.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN103069574A (zh
Inventor
李真宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103069574A publication Critical patent/CN103069574A/zh
Application granted granted Critical
Publication of CN103069574B publication Critical patent/CN103069574B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
CN201180039063.2A 2010-10-05 2011-04-27 光伏发电设备及其制造方法 Expired - Fee Related CN103069574B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2010-0097057 2010-10-05
KR1020100097057A KR101172186B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법
PCT/KR2011/003126 WO2012046936A1 (ko) 2010-10-05 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
CN103069574A CN103069574A (zh) 2013-04-24
CN103069574B true CN103069574B (zh) 2016-04-20

Family

ID=45927909

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180039063.2A Expired - Fee Related CN103069574B (zh) 2010-10-05 2011-04-27 光伏发电设备及其制造方法

Country Status (6)

Country Link
US (1) US20130025650A1 (enExample)
EP (1) EP2528106A4 (enExample)
JP (1) JP6185840B2 (enExample)
KR (1) KR101172186B1 (enExample)
CN (1) CN103069574B (enExample)
WO (1) WO2012046936A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989224B1 (fr) * 2012-04-06 2014-12-26 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.
US20150263195A1 (en) * 2014-03-14 2015-09-17 Tsmc Solar Ltd. Solar cell and method of fabricating same
CN109888027A (zh) * 2019-01-18 2019-06-14 北京铂阳顶荣光伏科技有限公司 背电极、太阳能电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101515609A (zh) * 2008-02-20 2009-08-26 周星工程股份有限公司 薄膜型太阳能电池及其制造方法
KR20090125675A (ko) * 2008-06-02 2009-12-07 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
CN101772843A (zh) * 2007-08-06 2010-07-07 周星工程股份有限公司 薄膜型太阳能电池的制造方法以及用该方法所制造出的薄膜型太阳能电池

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727823A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Tandem-solarmodul
JPH0610701Y2 (ja) * 1989-05-26 1994-03-16 三洋電機株式会社 光起電力装置
JPH06132552A (ja) * 1992-10-19 1994-05-13 Canon Inc 光起電力素子とその製造方法
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.
DE10017610C2 (de) * 2000-03-30 2002-10-31 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon
US6690041B2 (en) * 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
US7718347B2 (en) * 2006-03-31 2010-05-18 Applied Materials, Inc. Method for making an improved thin film solar cell interconnect using etch and deposition process
US20070240759A1 (en) * 2006-04-13 2007-10-18 Applied Materials, Inc. Stacked thin film photovoltaic module and method for making same using IC processing
JP2009267335A (ja) * 2007-09-28 2009-11-12 Fujifilm Corp 太陽電池用基板および太陽電池
CN102047440A (zh) 2008-07-04 2011-05-04 株式会社爱发科 太阳能电池单元的制造方法以及太阳能电池单元
KR101405023B1 (ko) * 2008-07-04 2014-06-10 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
JP2010098065A (ja) * 2008-10-15 2010-04-30 Hitachi Maxell Ltd 集積型光発電素子及び集積型光発電素子の製造方法
KR101013326B1 (ko) * 2008-11-28 2011-02-09 한국광기술원 Ｃｉｓ계 태양전지 및 그의 제조방법
JP2011023442A (ja) * 2009-07-14 2011-02-03 Seiko Epson Corp 太陽電池、太陽電池の製造方法
US8822259B2 (en) * 2010-04-21 2014-09-02 Applied Materials, Inc. Methods for enhancing light absorption during PV applications
US8227287B2 (en) * 2010-10-14 2012-07-24 Miasole Partially transmitted imaged laser beam for scribing solar cell structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101772843A (zh) * 2007-08-06 2010-07-07 周星工程股份有限公司 薄膜型太阳能电池的制造方法以及用该方法所制造出的薄膜型太阳能电池
CN101515609A (zh) * 2008-02-20 2009-08-26 周星工程股份有限公司 薄膜型太阳能电池及其制造方法
KR20090125675A (ko) * 2008-06-02 2009-12-07 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법

Also Published As

Publication number Publication date
EP2528106A4 (en) 2014-05-28
CN103069574A (zh) 2013-04-24
KR101172186B1 (ko) 2012-08-07
EP2528106A1 (en) 2012-11-28
US20130025650A1 (en) 2013-01-31
JP6185840B2 (ja) 2017-08-23
KR20120035514A (ko) 2012-04-16
WO2012046936A1 (ko) 2012-04-12
JP2013539243A (ja) 2013-10-17

Similar Documents

Publication Publication Date Title
CN102844879B (zh) 太阳能电池设备及其制造方法
US20120174977A1 (en) Solar Power Generation Apparatus and Manufacturing Method Thereof
US8779282B2 (en) Solar cell apparatus and method for manufacturing the same
CN102549772A (zh) 太阳能电池设备及其制造方法
EP2450963A2 (en) Solar cell and method for producing same
JP2013537364A (ja) 太陽光発電装置及びその製造方法
US8592246B2 (en) Methods of manufacturing a solar cell module
CN106876510B (zh) 太阳能电池装置
KR101072106B1 (ko) 태양전지 및 이의 제조방법
CN103069574A (zh) 光伏发电设备及其制造方法
KR101251870B1 (ko) 태양전지 및 이의 제조방법
CN104254926B (zh) 光伏装置
CN104011876B (zh) 太阳能电池装置及其制造方法
KR101091359B1 (ko) 태양전지 및 이의 제조방법
EP3314669B1 (en) A solar cell module
KR20130136739A (ko) 태양전지 및 이의 제조방법
KR101072170B1 (ko) 태양전지 및 이의 제조방법
KR101765922B1 (ko) 태양전지 및 이의 제조방법
CN103053030B (zh) 太阳能电池及包括该太阳能电池的太阳能电池组件
KR20130059976A (ko) 태양전지 및 이의 제조방법
KR101349432B1 (ko) 태양광 발전장치 및 이의 제조방법
KR101091499B1 (ko) 팁, 태양전지 및 팁을 이용한 태양전지의 제조방법
KR101543034B1 (ko) 팁 및 이를 이용한 태양전지의 제조방법
KR101273123B1 (ko) 태양전지 및 이의 제조방법
KR101231398B1 (ko) 태양전지 및 이의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160420

Termination date: 20180427