FR2989224B1 - Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2. - Google Patents

Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.

Info

Publication number
FR2989224B1
FR2989224B1 FR1253202A FR1253202A FR2989224B1 FR 2989224 B1 FR2989224 B1 FR 2989224B1 FR 1253202 A FR1253202 A FR 1253202A FR 1253202 A FR1253202 A FR 1253202A FR 2989224 B1 FR2989224 B1 FR 2989224B1
Authority
FR
France
Prior art keywords
producing
photovoltaic module
etching step
etching
possible step
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1253202A
Other languages
English (en)
Other versions
FR2989224A1 (fr
Inventor
Nicolas Karst
Charles Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1253202A priority Critical patent/FR2989224B1/fr
Priority to PCT/IB2013/052613 priority patent/WO2013150440A1/fr
Priority to CN201380022920.7A priority patent/CN104272459A/zh
Priority to US14/390,509 priority patent/US20150096606A1/en
Priority to EP13721110.8A priority patent/EP2834845A1/fr
Publication of FR2989224A1 publication Critical patent/FR2989224A1/fr
Application granted granted Critical
Publication of FR2989224B1 publication Critical patent/FR2989224B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
FR1253202A 2012-04-06 2012-04-06 Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2. Expired - Fee Related FR2989224B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1253202A FR2989224B1 (fr) 2012-04-06 2012-04-06 Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.
PCT/IB2013/052613 WO2013150440A1 (fr) 2012-04-06 2013-04-02 Procede pour realiser un module photovoltaïque avec une etape de gravure p3 et une eventuelle etape p2
CN201380022920.7A CN104272459A (zh) 2012-04-06 2013-04-02 用刻蚀步骤p3和可选的步骤p2制造光伏组件的方法
US14/390,509 US20150096606A1 (en) 2012-04-06 2013-04-02 Method for producing a photovoltaic module with an etching step p3 and an optional step p2
EP13721110.8A EP2834845A1 (fr) 2012-04-06 2013-04-02 Procede pour realiser un module photovoltaïque avec une etape de gravure p3 et une eventuelle etape p2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1253202A FR2989224B1 (fr) 2012-04-06 2012-04-06 Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.

Publications (2)

Publication Number Publication Date
FR2989224A1 FR2989224A1 (fr) 2013-10-11
FR2989224B1 true FR2989224B1 (fr) 2014-12-26

Family

ID=48325822

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1253202A Expired - Fee Related FR2989224B1 (fr) 2012-04-06 2012-04-06 Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.

Country Status (5)

Country Link
US (1) US20150096606A1 (fr)
EP (1) EP2834845A1 (fr)
CN (1) CN104272459A (fr)
FR (1) FR2989224B1 (fr)
WO (1) WO2013150440A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150045309A (ko) * 2013-10-18 2015-04-28 엘지이노텍 주식회사 태양전지 모듈

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4502225A (en) 1983-05-06 1985-03-05 Rca Corporation Mechanical scriber for semiconductor devices
WO1994007269A1 (fr) 1992-09-22 1994-03-31 Siemens Aktiengesellschaft Procede rapide de realisation d'un semi-conducteur en chalcopyrite sur un substrat
US5436204A (en) 1993-04-12 1995-07-25 Midwest Research Institute Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications
US20080047599A1 (en) * 2006-03-18 2008-02-28 Benyamin Buller Monolithic integration of nonplanar solar cells
US20090145472A1 (en) * 2007-12-10 2009-06-11 Terra Solar Global, Inc. Photovoltaic devices having conductive paths formed through the active photo absorber
US20100000589A1 (en) 2008-07-03 2010-01-07 Amelio Solar, Inc. Photovoltaic devices having conductive paths formed through the active photo absorber
JP4629151B2 (ja) * 2009-03-10 2011-02-09 富士フイルム株式会社 光電変換素子及び太陽電池、光電変換素子の製造方法
JP2010282998A (ja) * 2009-06-02 2010-12-16 Seiko Epson Corp 太陽電池、太陽電池の製造方法
KR101081294B1 (ko) * 2009-10-07 2011-11-08 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US8822809B2 (en) * 2009-10-15 2014-09-02 Lg Innotek Co., Ltd. Solar cell apparatus and method for manufacturing the same
KR101172186B1 (ko) * 2010-10-05 2012-08-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
KR101283053B1 (ko) * 2011-10-18 2013-07-05 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
KR101219972B1 (ko) * 2011-11-02 2013-01-21 엘지이노텍 주식회사 태양전지 및 이의 제조방법
FR2985606B1 (fr) * 2012-01-11 2014-03-14 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.

Also Published As

Publication number Publication date
WO2013150440A1 (fr) 2013-10-10
FR2989224A1 (fr) 2013-10-11
US20150096606A1 (en) 2015-04-09
CN104272459A (zh) 2015-01-07
EP2834845A1 (fr) 2015-02-11

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