FR2985606B1 - Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant. - Google Patents

Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.

Info

Publication number
FR2985606B1
FR2985606B1 FR1250289A FR1250289A FR2985606B1 FR 2985606 B1 FR2985606 B1 FR 2985606B1 FR 1250289 A FR1250289 A FR 1250289A FR 1250289 A FR1250289 A FR 1250289A FR 2985606 B1 FR2985606 B1 FR 2985606B1
Authority
FR
France
Prior art keywords
photovoltaic module
etches
etching
producing
corresponding photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1250289A
Other languages
English (en)
Other versions
FR2985606A1 (fr
Inventor
Joel Dufourcq
Sevak Amtablian
Nicolas Karst
Frederic Roux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1250289A priority Critical patent/FR2985606B1/fr
Priority to PCT/IB2013/050179 priority patent/WO2013105031A2/fr
Priority to EP13704492.1A priority patent/EP2803089A2/fr
Priority to US14/371,269 priority patent/US9502597B2/en
Priority to CN201380013519.7A priority patent/CN104160516B/zh
Publication of FR2985606A1 publication Critical patent/FR2985606A1/fr
Application granted granted Critical
Publication of FR2985606B1 publication Critical patent/FR2985606B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
FR1250289A 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant. Expired - Fee Related FR2985606B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1250289A FR2985606B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.
PCT/IB2013/050179 WO2013105031A2 (fr) 2012-01-11 2013-01-09 Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
EP13704492.1A EP2803089A2 (fr) 2012-01-11 2013-01-09 Procede pour realiser un module photovoltaïque avec deux etapes de gravure p2 et p3 et module photovoltaïque correspondant
US14/371,269 US9502597B2 (en) 2012-01-11 2013-01-09 Method for manufacturing a photovoltaic module with two etching steps P2 and P3 and corresponding photovoltaic module
CN201380013519.7A CN104160516B (zh) 2012-01-11 2013-01-09 具有两个刻蚀步骤p2和p3的用于制造光伏模块的方法及相应的光伏模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1250289A FR2985606B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.

Publications (2)

Publication Number Publication Date
FR2985606A1 FR2985606A1 (fr) 2013-07-12
FR2985606B1 true FR2985606B1 (fr) 2014-03-14

Family

ID=47716131

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1250289A Expired - Fee Related FR2985606B1 (fr) 2012-01-11 2012-01-11 Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant.

Country Status (5)

Country Link
US (1) US9502597B2 (fr)
EP (1) EP2803089A2 (fr)
CN (1) CN104160516B (fr)
FR (1) FR2985606B1 (fr)
WO (1) WO2013105031A2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2985607B1 (fr) * 2012-01-11 2018-01-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant.
FR2989223B1 (fr) * 2012-04-06 2014-12-26 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p1.
FR2989224B1 (fr) * 2012-04-06 2014-12-26 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.
US20140264998A1 (en) * 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
GB201322572D0 (en) 2013-12-19 2014-02-05 Oxford Photovoltaics Ltd Connection of photoactive regions in an optoelectronic device
FR3026228A1 (fr) * 2014-09-19 2016-03-25 Commissariat Energie Atomique Dispositif semi-photovoltaique semi-transparent a cellules en serie par interconnexion monolithique
US9859451B2 (en) 2015-06-26 2018-01-02 International Business Machines Corporation Thin film photovoltaic cell with back contacts
US9608159B2 (en) * 2016-05-09 2017-03-28 Solar-Tectic Llc Method of making a tandem solar cell having a germanium perovskite/germanium thin-film
US10062792B2 (en) 2016-05-16 2018-08-28 Solar-Tectic Llc Method of making a CZTS/silicon thin-film tandem solar cell
US9859450B2 (en) 2016-08-01 2018-01-02 Solar-Tectic, Llc CIGS/silicon thin-film tandem solar cell
US11757058B2 (en) * 2016-11-17 2023-09-12 Shangrao Jinko Solar Technology Development Co Ltd Solar cell panel
US11329177B2 (en) 2018-11-08 2022-05-10 Swift Solar Inc Stable perovskite module interconnects
US11631777B2 (en) 2019-03-11 2023-04-18 Swift Solar Inc. Integration of bypass diodes within thin film photovoltaic module interconnects
CN111463315B (zh) * 2019-08-26 2021-08-20 杭州纤纳光电科技有限公司 一种太阳能电池切割钝化一体化加工方法及其太阳能电池
US12094663B2 (en) 2021-09-30 2024-09-17 Swift Solar Inc. Bypass diode interconnect for thin film solar modules

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US4502225A (en) 1983-05-06 1985-03-05 Rca Corporation Mechanical scriber for semiconductor devices
DE59309438D1 (de) 1992-09-22 1999-04-15 Siemens Ag Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
AU2002363298A1 (en) * 2001-07-20 2003-05-12 Itn Energy Systems, Inc. Apparatus and method of production of thin film photovoltaic modules
JP4064340B2 (ja) * 2003-12-25 2008-03-19 昭和シェル石油株式会社 集積型薄膜太陽電池の製造方法
US8927315B1 (en) * 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
WO2007092293A2 (fr) * 2006-02-02 2007-08-16 Basol Bulent M Procédé de fabrication des précurseurs contenant cuivre indium gallium et des couches de composés semi-conducteurs
DE102007032283A1 (de) * 2007-07-11 2009-01-15 Stein, Wilhelm, Dr. Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung
EP2073269A1 (fr) * 2007-12-21 2009-06-24 Helianthos B.V. Procédé pour la fourniture d'une connexion en série dans un système de cellule solaire
US20100000589A1 (en) * 2008-07-03 2010-01-07 Amelio Solar, Inc. Photovoltaic devices having conductive paths formed through the active photo absorber
US20100031995A1 (en) * 2008-08-10 2010-02-11 Twin Creeks Technologies, Inc. Photovoltaic module comprising thin laminae configured to mitigate efficiency loss due to shunt formation
CN102576764A (zh) * 2009-10-15 2012-07-11 Lg伊诺特有限公司 太阳能电池设备及其制造方法
US20110240118A1 (en) * 2010-04-02 2011-10-06 Paul Hanlon James Beatty Method and device for scribing a thin film photovoltaic cell

Also Published As

Publication number Publication date
WO2013105031A3 (fr) 2013-10-24
US9502597B2 (en) 2016-11-22
US20150020864A1 (en) 2015-01-22
EP2803089A2 (fr) 2014-11-19
WO2013105031A2 (fr) 2013-07-18
CN104160516A (zh) 2014-11-19
FR2985606A1 (fr) 2013-07-12
CN104160516B (zh) 2017-05-10

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