FR2985607B1 - Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. - Google Patents
Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. Download PDFInfo
- Publication number
- FR2985607B1 FR2985607B1 FR1250291A FR1250291A FR2985607B1 FR 2985607 B1 FR2985607 B1 FR 2985607B1 FR 1250291 A FR1250291 A FR 1250291A FR 1250291 A FR1250291 A FR 1250291A FR 2985607 B1 FR2985607 B1 FR 2985607B1
- Authority
- FR
- France
- Prior art keywords
- photovoltaic module
- producing
- etching stages
- etching
- stages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1250291A FR2985607B1 (fr) | 2012-01-11 | 2012-01-11 | Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. |
PCT/IB2013/050167 WO2013105024A1 (fr) | 2012-01-11 | 2013-01-09 | Procede pour realiser un module photovoltaïque avec deux etapes de gravure p1 et p3 et module photovoltaïque correspondant |
CN201380013518.2A CN104160508B (zh) | 2012-01-11 | 2013-01-09 | 具有两个刻蚀步骤p1和p3的用于制造光伏模块的方法及相应的光伏模块 |
EP13704491.3A EP2803088A1 (fr) | 2012-01-11 | 2013-01-09 | Procede pour realiser un module photovoltaïque avec deux etapes de gravure p1 et p3 et module photovoltaïque correspondant |
US14/371,224 US9583660B2 (en) | 2012-01-11 | 2013-01-09 | Method for manufacturing a photovoltaic module with annealing for forming a photovoltaic layer and electrically conducting region |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1250291A FR2985607B1 (fr) | 2012-01-11 | 2012-01-11 | Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. |
FR1250291 | 2012-01-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2985607A1 FR2985607A1 (fr) | 2013-07-12 |
FR2985607B1 true FR2985607B1 (fr) | 2018-01-26 |
Family
ID=47716130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1250291A Expired - Fee Related FR2985607B1 (fr) | 2012-01-11 | 2012-01-11 | Procede pour realiser un module photovoltaique avec deux etapes de gravure p1 et p3 et module photovoltaique correspondant. |
Country Status (5)
Country | Link |
---|---|
US (1) | US9583660B2 (fr) |
EP (1) | EP2803088A1 (fr) |
CN (1) | CN104160508B (fr) |
FR (1) | FR2985607B1 (fr) |
WO (1) | WO2013105024A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3026228A1 (fr) * | 2014-09-19 | 2016-03-25 | Commissariat Energie Atomique | Dispositif semi-photovoltaique semi-transparent a cellules en serie par interconnexion monolithique |
KR102276847B1 (ko) * | 2014-09-23 | 2021-07-14 | 삼성전자주식회사 | 가상 오브젝트 제공 방법 및 그 전자 장치 |
US11329177B2 (en) | 2018-11-08 | 2022-05-10 | Swift Solar Inc | Stable perovskite module interconnects |
US11631777B2 (en) * | 2019-03-11 | 2023-04-18 | Swift Solar Inc. | Integration of bypass diodes within thin film photovoltaic module interconnects |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4502225A (en) | 1983-05-06 | 1985-03-05 | Rca Corporation | Mechanical scriber for semiconductor devices |
US5578503A (en) * | 1992-09-22 | 1996-11-26 | Siemens Aktiengesellschaft | Rapid process for producing a chalcopyrite semiconductor on a substrate |
US20080105303A1 (en) * | 2003-01-03 | 2008-05-08 | Bp Corporation North America Inc. | Method and Manufacturing Thin Film Photovoltaic Modules |
JP4064340B2 (ja) * | 2003-12-25 | 2008-03-19 | 昭和シェル石油株式会社 | 集積型薄膜太陽電池の製造方法 |
DE102007032283A1 (de) * | 2007-07-11 | 2009-01-15 | Stein, Wilhelm, Dr. | Dünnschichtsolarzellen-Modul und Verfahren zu dessen Herstellung |
US20090145472A1 (en) * | 2007-12-10 | 2009-06-11 | Terra Solar Global, Inc. | Photovoltaic devices having conductive paths formed through the active photo absorber |
US20100000589A1 (en) * | 2008-07-03 | 2010-01-07 | Amelio Solar, Inc. | Photovoltaic devices having conductive paths formed through the active photo absorber |
JP2010282998A (ja) * | 2009-06-02 | 2010-12-16 | Seiko Epson Corp | 太陽電池、太陽電池の製造方法 |
US20110155219A1 (en) * | 2009-12-29 | 2011-06-30 | Du Pont Apollo Limited | Thin film solar cell and method for fabricating the same |
JP2011171605A (ja) * | 2010-02-19 | 2011-09-01 | Sumitomo Metal Mining Co Ltd | カルコパイライト膜の製造方法 |
FR2985606B1 (fr) * | 2012-01-11 | 2014-03-14 | Commissariat Energie Atomique | Procede pour realiser un module photovoltaique avec deux etapes de gravure p2 et p3 et module photovoltaique correspondant. |
-
2012
- 2012-01-11 FR FR1250291A patent/FR2985607B1/fr not_active Expired - Fee Related
-
2013
- 2013-01-09 WO PCT/IB2013/050167 patent/WO2013105024A1/fr active Application Filing
- 2013-01-09 CN CN201380013518.2A patent/CN104160508B/zh not_active Expired - Fee Related
- 2013-01-09 EP EP13704491.3A patent/EP2803088A1/fr not_active Withdrawn
- 2013-01-09 US US14/371,224 patent/US9583660B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US9583660B2 (en) | 2017-02-28 |
EP2803088A1 (fr) | 2014-11-19 |
CN104160508A (zh) | 2014-11-19 |
CN104160508B (zh) | 2017-05-03 |
WO2013105024A1 (fr) | 2013-07-18 |
US20150007866A1 (en) | 2015-01-08 |
FR2985607A1 (fr) | 2013-07-12 |
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Legal Events
Date | Code | Title | Description |
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PLFP | Fee payment |
Year of fee payment: 4 |
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PLFP | Fee payment |
Year of fee payment: 5 |
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PLFP | Fee payment |
Year of fee payment: 6 |
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PLFP | Fee payment |
Year of fee payment: 7 |
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PLFP | Fee payment |
Year of fee payment: 8 |
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ST | Notification of lapse |
Effective date: 20200910 |