JP6185840B2 - 太陽光発電装置及びその製造方法 - Google Patents

太陽光発電装置及びその製造方法 Download PDF

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Publication number
JP6185840B2
JP6185840B2 JP2013532702A JP2013532702A JP6185840B2 JP 6185840 B2 JP6185840 B2 JP 6185840B2 JP 2013532702 A JP2013532702 A JP 2013532702A JP 2013532702 A JP2013532702 A JP 2013532702A JP 6185840 B2 JP6185840 B2 JP 6185840B2
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Japan
Prior art keywords
separator
separators
manufacturing
light absorbing
buffer layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2013532702A
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English (en)
Japanese (ja)
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JP2013539243A5 (enExample
JP2013539243A (ja
Inventor
ウー リー、ジン
ウー リー、ジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2013539243A publication Critical patent/JP2013539243A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2013532702A 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法 Expired - Fee Related JP6185840B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020100097057A KR101172186B1 (ko) 2010-10-05 2010-10-05 태양광 발전장치 및 이의 제조방법
KR10-2010-0097057 2010-10-05
PCT/KR2011/003126 WO2012046936A1 (ko) 2010-10-05 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (3)

Publication Number Publication Date
JP2013539243A JP2013539243A (ja) 2013-10-17
JP2013539243A5 JP2013539243A5 (enExample) 2014-06-19
JP6185840B2 true JP6185840B2 (ja) 2017-08-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013532702A Expired - Fee Related JP6185840B2 (ja) 2010-10-05 2011-04-27 太陽光発電装置及びその製造方法

Country Status (6)

Country Link
US (1) US20130025650A1 (enExample)
EP (1) EP2528106A4 (enExample)
JP (1) JP6185840B2 (enExample)
KR (1) KR101172186B1 (enExample)
CN (1) CN103069574B (enExample)
WO (1) WO2012046936A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2989224B1 (fr) * 2012-04-06 2014-12-26 Commissariat Energie Atomique Procede pour realiser un module photovoltaique avec une etape de gravure p3 et une eventuelle etape p2.
US20150263195A1 (en) * 2014-03-14 2015-09-17 Tsmc Solar Ltd. Solar cell and method of fabricating same
CN109888027A (zh) * 2019-01-18 2019-06-14 北京铂阳顶荣光伏科技有限公司 背电极、太阳能电池及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727823A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Tandem-solarmodul
JPH0610701Y2 (ja) * 1989-05-26 1994-03-16 三洋電機株式会社 光起電力装置
JPH06132552A (ja) * 1992-10-19 1994-05-13 Canon Inc 光起電力素子とその製造方法
NL1013900C2 (nl) * 1999-12-21 2001-06-25 Akzo Nobel Nv Werkwijze voor de vervaardiging van een zonnecelfolie met in serie geschakelde zonnecellen.
DE10017610C2 (de) * 2000-03-30 2002-10-31 Hahn Meitner Inst Berlin Gmbh Verfahren zur Herstellung eines Solarmoduls mit integriert serienverschalteten Dünnschicht-Solarzellen und Verwendung davon
US6690041B2 (en) * 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
US7718347B2 (en) * 2006-03-31 2010-05-18 Applied Materials, Inc. Method for making an improved thin film solar cell interconnect using etch and deposition process
US20070240759A1 (en) * 2006-04-13 2007-10-18 Applied Materials, Inc. Stacked thin film photovoltaic module and method for making same using IC processing
KR101301664B1 (ko) * 2007-08-06 2013-08-29 주성엔지니어링(주) 박막형 태양전지 제조방법 및 그 방법에 의해 제조된박막형 태양전지
US20100229936A1 (en) * 2007-09-28 2010-09-16 Fujifilm Corporation Substrate for solar cell and solar cell
KR101460580B1 (ko) * 2008-02-20 2014-11-12 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
KR101457573B1 (ko) * 2008-06-02 2014-11-03 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
CN102047440A (zh) * 2008-07-04 2011-05-04 株式会社爱发科 太阳能电池单元的制造方法以及太阳能电池单元
KR101405023B1 (ko) * 2008-07-04 2014-06-10 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
JP2010098065A (ja) * 2008-10-15 2010-04-30 Hitachi Maxell Ltd 集積型光発電素子及び集積型光発電素子の製造方法
KR101013326B1 (ko) * 2008-11-28 2011-02-09 한국광기술원 Ｃｉｓ계 태양전지 및 그의 제조방법
JP2011023442A (ja) * 2009-07-14 2011-02-03 Seiko Epson Corp 太陽電池、太陽電池の製造方法
US8822259B2 (en) * 2010-04-21 2014-09-02 Applied Materials, Inc. Methods for enhancing light absorption during PV applications
US8227287B2 (en) * 2010-10-14 2012-07-24 Miasole Partially transmitted imaged laser beam for scribing solar cell structures

Also Published As

Publication number Publication date
CN103069574B (zh) 2016-04-20
EP2528106A4 (en) 2014-05-28
EP2528106A1 (en) 2012-11-28
KR101172186B1 (ko) 2012-08-07
KR20120035514A (ko) 2012-04-16
JP2013539243A (ja) 2013-10-17
CN103069574A (zh) 2013-04-24
WO2012046936A1 (ko) 2012-04-12
US20130025650A1 (en) 2013-01-31

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