CN109888027A - 背电极、太阳能电池及其制备方法 - Google Patents
背电极、太阳能电池及其制备方法 Download PDFInfo
- Publication number
- CN109888027A CN109888027A CN201910048917.1A CN201910048917A CN109888027A CN 109888027 A CN109888027 A CN 109888027A CN 201910048917 A CN201910048917 A CN 201910048917A CN 109888027 A CN109888027 A CN 109888027A
- Authority
- CN
- China
- Prior art keywords
- layer
- back electrode
- area
- prepared
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 19
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010248 power generation Methods 0.000 abstract description 4
- 230000011218 segmentation Effects 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 238000006748 scratching Methods 0.000 description 6
- 230000002393 scratching effect Effects 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910048917.1A CN109888027A (zh) | 2019-01-18 | 2019-01-18 | 背电极、太阳能电池及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910048917.1A CN109888027A (zh) | 2019-01-18 | 2019-01-18 | 背电极、太阳能电池及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109888027A true CN109888027A (zh) | 2019-06-14 |
Family
ID=66926269
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910048917.1A Pending CN109888027A (zh) | 2019-01-18 | 2019-01-18 | 背电极、太阳能电池及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109888027A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111900219A (zh) * | 2020-07-10 | 2020-11-06 | 唐山科莱鼎光电科技有限公司 | 用于制备薄膜太阳能电池第一道刻线、第三道刻线的方法 |
CN112635600A (zh) * | 2020-12-22 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 一种导电背板及其制作方法、背接触光伏组件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120048333A1 (en) * | 2010-08-30 | 2012-03-01 | Karpenko Oleh P | Photovoltaic device interconnect |
CN102422435A (zh) * | 2009-05-18 | 2012-04-18 | 三菱电机株式会社 | 薄膜太阳能电池及其制造方法 |
CN102593238A (zh) * | 2010-10-12 | 2012-07-18 | 上方能源技术(杭州)有限公司 | 用于薄膜太阳能电池的激光划线方法及其设备 |
CN103069574A (zh) * | 2010-10-05 | 2013-04-24 | Lg伊诺特有限公司 | 光伏发电设备及其制造方法 |
CN104272458A (zh) * | 2012-04-06 | 2015-01-07 | 原子能和替代能源委员会 | 用刻蚀步骤p3和可选的步骤p1制造光伏组件的方法 |
CN104766907A (zh) * | 2015-04-09 | 2015-07-08 | 山东禹城汉能薄膜太阳能有限公司 | 柔性cigs薄膜太阳能电池的连接方法 |
-
2019
- 2019-01-18 CN CN201910048917.1A patent/CN109888027A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102422435A (zh) * | 2009-05-18 | 2012-04-18 | 三菱电机株式会社 | 薄膜太阳能电池及其制造方法 |
US20120048333A1 (en) * | 2010-08-30 | 2012-03-01 | Karpenko Oleh P | Photovoltaic device interconnect |
CN103069574A (zh) * | 2010-10-05 | 2013-04-24 | Lg伊诺特有限公司 | 光伏发电设备及其制造方法 |
CN102593238A (zh) * | 2010-10-12 | 2012-07-18 | 上方能源技术(杭州)有限公司 | 用于薄膜太阳能电池的激光划线方法及其设备 |
CN104272458A (zh) * | 2012-04-06 | 2015-01-07 | 原子能和替代能源委员会 | 用刻蚀步骤p3和可选的步骤p1制造光伏组件的方法 |
CN104766907A (zh) * | 2015-04-09 | 2015-07-08 | 山东禹城汉能薄膜太阳能有限公司 | 柔性cigs薄膜太阳能电池的连接方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111900219A (zh) * | 2020-07-10 | 2020-11-06 | 唐山科莱鼎光电科技有限公司 | 用于制备薄膜太阳能电池第一道刻线、第三道刻线的方法 |
CN112635600A (zh) * | 2020-12-22 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | 一种导电背板及其制作方法、背接触光伏组件 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI692878B (zh) | 製造薄膜太陽電池面板的方法及薄膜太陽電池配置 | |
US9893221B2 (en) | Solar cell and method of fabricating the same | |
US20090272434A1 (en) | Thin-film solar cell and method of fabricating thin-film solar cell | |
CN102082198B (zh) | 一种高功率低电压硅基薄膜太阳能电池及其制造方法 | |
CN101438207A (zh) | 利用蚀刻与沉积工艺制造改进式薄膜型太阳能电池互连的方法 | |
JP2006332453A (ja) | 薄膜太陽電池の製造方法および薄膜太陽電池 | |
CN102554472B (zh) | 一种用于薄膜太阳能电池的划线方法及其设备 | |
CN106229353B (zh) | 一种先并联再串联的薄膜电池组件制备方法 | |
US20200303572A1 (en) | Thin film solar cell | |
CN109888027A (zh) | 背电极、太阳能电池及其制备方法 | |
CN106098809B (zh) | 一种串并联式薄膜电池组件的制备方法 | |
CN101980377A (zh) | 铜铟镓硒薄膜电池的制备方法 | |
CN105449037A (zh) | 一种柔性薄膜太阳电池组件的制备方法 | |
TW201601363A (zh) | 有機薄膜太陽電池之串聯模組及其製作方法 | |
CN104766907A (zh) | 柔性cigs薄膜太阳能电池的连接方法 | |
CN105140310B (zh) | 一种透光型铜铟镓硒电池组件制备工艺 | |
JP4379560B2 (ja) | 薄膜太陽電池とその製造方法 | |
CN103390672A (zh) | 一种集成式薄膜太阳能电池组件及其制备方法 | |
US11515440B2 (en) | Semitransparent thin-film solar module | |
US11837675B2 (en) | Semitransparent thin-film solar module | |
US20140360551A1 (en) | Photoelectric module and method of manufacturing the same | |
CN204391137U (zh) | 一种非晶硅薄膜太阳能电池 | |
CN110212052B (zh) | 集成太阳能电池互联的阻水前板及其加工方法 | |
JP2001119048A (ja) | 集積型薄膜太陽電池の製造方法 | |
CN108899382A (zh) | 一种太阳能电池板激光刻线异常的返修方法及太阳能电池板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
CB02 | Change of applicant information |
Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 3001, room 6, building No. 7, Rongchang East Street, Beijing economic and Technological Development Zone, Beijing, Daxing District 100176, China Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
|
CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210421 Address after: No. 201, No. 1 A, No. 1 A (Shenzhen Qianhai business secretary Co., Ltd.), Qianhai Shenzhen Hong Kong cooperation zone, Qianhai Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210916 Address after: 201203 3rd floor, no.665 Zhangjiang Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Applicant after: Shanghai zuqiang Energy Co.,Ltd. Address before: 518066 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Applicant before: Shenzhen Zhengyue development and Construction Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |